European Materials Research Society Symposia Proceedings Series

The high expectations set on ceramic materials in recent years have always been balanced by the very considerable difficulties seen in reaching the required levels of reproducibility and cost. Indications of the significant progress, which can be seen in the papers presented in this volume, coupled with the recognition that considerable problems still lie between the state of the art and the full and confident exploitation of the many merits of ceramics, provide a healthy basis for the profitable selection of future research directions. The mastery of ceramic processing and the imaginative matching of the properties of these materials to diverse applications remain among the most promising sectors for technological development.

This volume contains most of the papers presented at symposium D, one of the four symposia that formed the 1988 Strasbourg Spring Conference. The three day programme consisted of nine oral sessions; a poster session and a plenary talk giving an overview of current topics in hard magnetic materials. Scientists involved in basic as well as applied research concentrated their discussions on the fundamental processes relevant for the formation of metastable alloys such as amorphous alloys (metallic glasses), microcrystalline, quasicrystalline and nanocrystalline alloys and their applications. These materials are proving to be of considerable interest to research workers because of their possible application in the electronics industry, e.g. as diffusion barriers in devices or as data storage media.

This symposium attracted 82 papers which were presented orally or as posters. Fourteen invited speakers presented state of the art reviews and aspects of future key topics in this increasingly important area of materials science. The high level of scientific presentation during the conference enhanced the aim of the symposium, which was to stimulate discussion amongst materials scientists, chemists, engineers and physicists with a common interest in this field and to disseminate knowledge of progress.

These papers provide an interesting collection of contributions on fundamental magnetic behaviour, microstructural studies, processing methods and applications of rare earth, iron-rich, high performance permanent magnets. The remarkably versatile nature of the Nd-Fe-B-type alloys with respect to magnet processing is very evident in these proceedings. Thus there are papers which describe the production of magnets by the die-upset-forging of melt-spun ribbon, by cold-compaction of melt-spun-ribbon with soft metals, by mechanical alloying and by hot working of cast material. Work is also reported on the production of new permanent magnets from melt-spun material based on the alloys Nd4Fe78B18 and SmFe11.5Ti1.04. Both these alloys look promising and the former appears to be close to commercial exploitation.

The papers in this two volume set provide the latest information on research and development in the field of high Tc-materials. Special emphasis is placed on methods of preparation and microstructural characterization for both thin films and single crystals. Considerable attention is also paid to the potential applications of thin films and bulk materials. The following topics are covered in detail: New superconductors; Relations between structure and/or substitution and superconductivity in ternary Cu-oxides; Single crystals, microstructure; Thin films, preparation and properties; Technical applications.

Deep implants are produced by the high-energy implantation of impurities in a host material. The thus created subsurface layers have properties that are different from the very surface and the bulk and show great promise for application in the electronics industry.

As demonstrated by the contributions in this volume, the domain of superconducting and low-temperature devices is in a rapidly expanding phase. Interactions between materials sciences, low-temperature physics, astrophysics, nuclear and particle physics have provided the incentive for new experiments, which could ultimately record such rare interactions as double beta decay, neutrino scattering, or collisions of the elusive dark matter halo particles. The theoretical and experimental improvements achieved during the last year have been impressive. Detection of 60 keV resolution with a non-zero spin material as a target seems therefore realizable in the near future. Similarly, impressive achievements on ballistic phonons detection and superheated superconducting detectors have been presented, together with reliable techniques for developing ultra low noise electronics required by these ambitious experiments. Apart from the contributions presented during the symposium, the two original papers by Niinikoski proposing the use of bolometers as particle detectors have been included in this volume. These papers, despite their current interest, have never been published before. The comprehensive style of the papers will appeal to specialists and non-specialists alike, in particular solid-state physicists will find the volume of considerable interest, as the field of materials research continues to benefit from the type of work presented here.

This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Materials Research in thin and ultrathin magnetic structures is a multidisciplinary field which heavily relies on state-of-the-art growth, characterization and theoretical approaches to build a comprehensive physical picture on how magnetic properties depend on interfacial structural issues, interlayer coupling and transport phenomena. Often in this field, the critical properties and characterization required necessitates knowledge of structural and magnetic phenomena extending over several atomic planes. Atomic controlled growth techniques are required and atomic sensitivity is needed from magnetic and structural probes. This critical knowledge is vital for device applications, providing the basis for the synergistic interactions that are predominant in this field of research. This volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in ultrathin film magnetism.

This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time. A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2

In recent years Solid State Ionics and Solid State Microbatteries have attracted considerable interest due to the important role which they may play in the future of microelectronics and eventually in other fields of energy storage. This volume presents papers on the theory, experiments and applications in this field including: Solid state microbatteries; Thin films solid state batteries; Fast ion conduction; Intercalation and lattice dynamics in layered materials; Electrochromes; Solid state diffusion; and Microsensors.

The contributions in this volume represent the work of over ninety international researchers from universities, government laboratories and industry, with diverse backgrounds and interests in a wide range of coatings and surface modifications processes. The seventy-three papers, including seven invited talks and thirty-eight oral communications attest to the fact that surface science and engineering is still a rapidly growing field which attracts experts from the large materials, scientific and technical community.

This volume presents a comprehensive review on the actual trends in basic and applied research on biomaterials, in hard tissue repair and reconstruction, as well as their consequences for both industry and society. The importance of methods for high-resolution characterization are highlighted, the crucial problem of interactions is illustrated by a variety of methods which include implantation, cell culture, and microstructural examination. Also included are papers on the recent developments in joint replacement, maxillo facial, nerve and ligament repair, and dental implants.

This volume discusses both the practical and theoretical aspects of energy beam materials processing. It highlights the recent advances in the use of beams and incoherent light sources to enhance or modify chemical processes at solid surfaces. Special attention is given to the latest developments in the use of ion, electron and photon beams, and on laser-assisted process chemistry. Thin film and surface and interface reactions as well as bulk phase transformations are discussed. Practical technological details and the criteria for present and future applications are also reviewed. The papers collected in this volume reflect the continuing strong interest and variety of development in this field.

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

The dynamic developments in high-temperature superconductivity over the last three years has augmented the importance of materials research not only for applications, but also for the understanding of underlying physical phenomena. The discovery of new superconductors has opened up new facets of High Tc research, and the perfection of already known materials has enabled reliable physical measurements to be carried out, providing a foundation for theoretical models. The papers in this volume present an overview of the recent developments in the field of High Tc-materials research. One of the highlights of this meeting was the plenary lecture by the Nobel laureate K. Alex Müller on the importance of the apical oxygen phenomena which are strongly connected with Tc changes.

The 53 papers in this volume cover the topics of Metal Matrix Composites production routes, aspects of interfacial thermodynamics and kinetics, mechanical and physical properties, post-production processing, and applications. The contributions provide a valuable insight into the current trends in the use of metal matrix composites.

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.

This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

This volume brings together 47 papers from scientists involved in the fabrication of new nuclear fuels, in basic research of nuclear materials, their application and technology as well as in computer codes and modelling of fuel behaviour. The main emphasis is on progress in the development of non-oxide fuels besides reporting advances in the more conventional oxide fuels. The two currently performed large reactor safety programmes CORA and PHEBUS-FP are described in invited lectures. The contributions review basic property measurements, as well as the present state of fuel performance modelling. The performance of today's nuclear fuel, hence UO2, at high burnup is also reviewed with particular emphasis on the recently observed phenomenon of grain subdivision in the cold part of the oxide fuel at high burnup, the so-called "rim" effect. Similar phenomena can be simulated by ion implantation in order to better elucidate the underlying mechanism and reviews on high resolution electron microscopy provide further information. The papers will provide a useful treatise of views, ideas and new results for all those scientists and engineers involved in the specific questions of current nuclear waste management.

This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

The contributions in this volume reflect not only the growing understanding of the underlying mechanisms controlling the various reactions in laser surface processing, but also the potential of several developing applications of direct processing. The most notable trend in the field currently is the technique of laser ablation, which is reported in almost a quarter of the papers in this volume. Whilst by no means a new phenomenon, attention has until recent years remained in the area of lithography and UV-sensitive materials. The growth in interest lies in the use of the technique to grow multi-component thin films and multi-layers. A number of papers on the topic of process diagnostics and in-situ measurements are also included. The theme of these annual meetings is centred around the physical and chemical modification of thin films and surfaces induced by the action of photon, ion, neutral, or electron beams in a variety of environments. Consequently these proceedings provide a comprehensive and unified presentation of the latest developments in this field.

The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.

Research on issues relating to nuclear waste storage plays an important role in contributing to finding good solutions to a problem that concerns mankind's future, predicting the durability of engineered barriers and determining the kinetics of alteration processes. The latter is now one of the vital questions in the scientific community concerned with clay minerals and hydrosilicate gels. The 20 papers published in this volume bring together the experience of specialists on topics such as hydrosilicate gels and early mineral phase crystallization, clay mineral reactions and crystallochemistry of clay minerals. The contributions are of world-wide interest, and will help to stimulate future research and analysis in this field.

The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.

Many aspects of the interaction of radiation with glasses are reviewed in this volume, with contributions from a broad scientific community. Several of the papers focus on the interdisciplinary approach required to connect technological applications to the basic interactions of energetic ions with insulators, reporting on the challenging problems that still remain to be solved. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry. The proceedings represent an ideal bridge between the sixth and the planned seventh International Conference on Radiation Effects in Insulators to be held in Japan in 1993.

In the past ten years the science of Polyconjugated Organic Materials has grown rapidly and is now experiencing the uncorrelated explosive development typical of a new science. The transfer of the basic scientific knowledge of these materials to the field of technology and industry is presently the focus of interest in academic and industrial circles. New devices are being developed which are paving the way for future technologies. Organic materials have become the focus of attention in these technologies. The large and very fast nonlinear optical response of organic molecules has generated new theoretical and experimental physics as well as new synthetic chemistry. The advancement of knowledge and the new achievements in this field require the interdisciplinary practice of chemists, physicists and engineers who can talk the same technical language on molecular systems which show specific physical properties. The purpose of this book is to introduce beginners to the field of nonlinear optics in organic materials and to expose specialists in one field to the problems of the other fields. Since organic molecules with a large and very fast nonlinear optical response are being continuously discovered the contributions focus on this class of materials. The volume provides a useful introduction for all those interested in the theoretical and experimental aspects of this expanding field.