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BTA/BTB16 and T16 Series

16A TRIACS

SNUBBERLESS , LOGIC LEVEL & STANDARD

MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 16 600, 700 and 800 10 to 50 Unit A V
G

A2

A1

A2

mA
A1 A2 G

DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless versions (BTA/BTB...W and T16 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734). ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) RMS on-state current (full sine wave) Parameter

D2PAK (T16-G)
A2

A1 A2 G

A1 A2 G

TO-220AB (BTB16)

TO-220AB Insulated (BTA16)

Value D2PAK TO-220AB Tc = 100C Tc = 85C t = 16.7 ms t = 20 ms 168 160 144 Tj = 125C Tj = 25C Tj = 125C Tj = 125C 50 VDRM/VRRM
+ 100

Unit A

16 A A s A/s V A W C 1/7

TO-220AB Ins. ITSM I t dI/dt Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s

VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range

4 1 - 40 to + 150 - 40 to + 125

October 2002 - Ed: 6A

BTA/BTB16 and T16 Series


ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s

SNUBBERLESS and LOGIC LEVEL (3 Quadrants)


Symbol Test Conditions Quadrant T16 T1635 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C Tj = 125C Tj = 125C MIN. (dV/dt)c = 10 V/s Without snubber I - III II MIN. (dI/dt)c (2) (dV/dt)c = 0.1 V/s RL = 33 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 500 8.5 15 25 30 40 8.5 3.0 35 SW 10 1.3 0.2 35 50 60 500 8.5 50 70 80 1000 14 V/s A/ms BTA/BTB16 CW 35 BW 50 mA V V mA mA Unit

STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB16 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. RL = 3.3 k Tj = 125C RL = 33 I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 60 120 400 10 V/s V/s B 50 100 mA V V mA mA Unit

(dV/dt)c (2) (dI/dt)c = 7 A/ms

STATIC CHARACTERISTICS
Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM
Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1

Test Conditions ITM = 22.5 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX.

Value 1.55 0.85 25 5 2

Unit V V m A mA

Threshold voltage Dynamic resistance VDRM = VRRM

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BTA/BTB16 and T16 Series


THERMAL RESISTANCES
Symbol Rth(j-c) Junction to case (AC) Parameter DPAK TO-220AB TO-220AB Insulated Rth(j-a) Junction to ambient S = 1 cm DPAK TO-220AB TO-220AB Insulated
S: Copper surface under tab

Value 1.2 2.1 45 60

Unit C/W

C/W

PRODUCT SELECTOR
Voltage(xxx) Part Number 600 V BTA/BTB16-xxxB BTA/BTB16-xxxBW BTA/BTB16-xxxC BTA/BTB16-xxxCW BTA/BTB16-xxxSW T1635-xxxG X X X X X X 700 V X X X X X 800 V X X X X X X 50 mA 50 mA 25 mA 35 mA 10 mA 35 mA Standard Snubberless Standard Snubberless Logic level Snubberless TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB DPAK Sensitivity Type Package

ORDERING INFORMATION

BT A 16 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 16A

600

BW

(RG)
PACKING MODE Blank: Bulk RG: Tube

VOLTAGE: 600: 600V 700: 700V 800: 800V

SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL

T 16 35
TRIAC SERIES CURRENT: 16A

600 G
PACKAGE: G: D2PAK

(-TR)

VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 35: 35mA

PACKING MODE: Blank: Tube -TR: Tape & Reel

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BTA/BTB16 and T16 Series

OTHER INFORMATION
Part Number BTA/BTB16-xxxyz BTA/BTB16-xxxyzRG T1635-xxxG T1635-xxxG-TR Marking BTA/BTB16xxxyz BTA/BTB16-xxxyz T1635xxxG T1635xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel

Note: xxx = voltage, y = sensitivity, z = type

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).
P (W)

Fig. 2-1: RMS on-state current versus case temperature (full cycle).
IT(RMS) (A) 18 16 14 12 10 8 6 4 2 0
BTB/T16

20 18 16 14 12 10 8 6 4 2 0

BTA

IT(RMS) (A)
0 2 4 6 8 10 12 14 16

Tc(C) 0 25 50 75 100 125

Fig. 2-2: DPAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 m), full cycle.
IT(RMS) (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 Tamb(C) 50 75 100 125
D PAK 2 (S=1cm )
2

Fig. 3: Relative variation of thermal impedance versus pulse duration.

K=[Zth/Rth] 1E+0
Zth(j-c)

1E-1

Zth(j-a)

tp (s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

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BTA/BTB16 and T16 Series

Fig. 4: values)
ITM (A) 200

On-state

characteristics

(maximum

Fig. 5: Surge peak on-state current versus number of cycles.


ITSM (A)

Tj max

100

10

Tj=25C

VTM (V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj max: Vto = 0.85 V Rd = 25 m

4.0

4.5

5.0

180 160 140 120 100 80 60 40 20 0

t=20ms

Non repetitive Tj initial=25C

One cycle

Repetitive Tc=85C

Number of cycles 1 10 100 1000

Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It.
ITSM (A), It (As) 3000
Tj initial=25C dI/dt limitation: 50A/s

Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0
IGT

1000

1.5
IH & IL
ITSM

1.0 0.5

It

tp (ms) 100 0.01 0.10 1.00 10.00

Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140

Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 1.0 (dV/dt)c (V/s) 10.0 100.0
B C SW

Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4

BW/CW/T1635

3 2 1 0 0 25 50 Tj (C) 75 100 125

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BTA/BTB16 and T16 Series

Fig. 10:DPAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 m).
Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm) 20 24 28 32 36 40
D PAK
2

PACKAGE MECHANICAL DATA TO-220AB (Plastic)


DIMENSIONS
B C

REF.

Millimeters Min. Typ. 3.75 Max. Min.

Inches Typ. 0.147 Max. 0.625

b2

L F I A

l4

a1

c2

l3
l2 a2

b1 e

M c1

A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M

15.20

15.90 0.598

13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102

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BTA/BTB16 and T16 Series


PACKAGE MECHANICAL DATA DPAK (Plastic)
DIMENSIONS
A E L2 C2

REF.

Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min.

Inches Typ. Max.

D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R

A A1 A2 B B2 C C2 D E G L L2 L3 R V2

4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0

1.40

0.40

0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8 0 8

FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic)


16.90

10.30 1.30

5.08

3.70 8.90

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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