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RSS090N03

Transistors

Switching (30V, 9A)


RSS090N03
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zExternal dimensions (Units : mm)
SOP8
(8)

5.00.2
(5)

6.00.3 3.90.15

1.50.1 0.15

zApplication Power switching, DC/DC converter.

1.27

0.40.1 0.1 Each lead has same dimensions

zStructure Silicon N-channel MOS FET

zAbsolute maximum ratings (Ta = 25C)


Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Is Isp PD Tch Tstg Limits 30 20 9.0 36 1.6 6.4 2 150 55 to +150 Unit V V A A A A W

zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)

Max.1.75

0.50.1
(1) (4)

0.20.1

1
(2) (3) (4)

(1) (2) (3) (4)

Total Power Dissipation (TC=25C) Channel Temperature Storage Temperature


Pw10s, Duty cycle1%

(1)

C C

1 ESD Protection Diode. 2 Body Diode.

(1) (2) (3) (4) (5) (6) (7) (8)

Source Source Source Gate Drain Drain Drain Drain

A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.

zThermal resistance (Ta = 25C)


Parameter Channel to Ambient Symbol Rth (ch-A) Limits 62.5 Unit

C / W

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RSS090N03
Transistors
zElectrical characteristics (Ta = 25C)
Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Pulsed

Symbol
IGSS V (BR)DSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Min.
30 1.0 6.0

Typ.
11 15 17 810 225 160 10 13 46 15 11 2.5 4.5

Max.
10 1 2.5 15 22 24 15

Unit
A V A V m

Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V ID=9A, VGS=4.5V ID=9A, VGS=4V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33 RGS=10 VDD=15V VGS=5V ID=9A

S pF pF pF ns ns ns ns nC nC nC

zBody diode characteristics (Source-Drain Characteristics) (Ta = 25C)


Parameter Forward Voltage
Pulsed

Symbol VSD

Min.

Typ.

Max. 1.2

Unit V

Test Conditions Is=6.4A, VGS=0V

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RSS090N03
Transistors
zElectrical characteristic curves
10000
GATE-SOURCE VOLTAGE: VGS (V)

Ta=25C f=1MHz VGS=0V


Ciss

10000

CAPACITANCE : C (pF)

SWITCHING TIME : t (ns)

1000

tf td(off)

Ta=25C VDD=15V VGS=10V RG=10 Pulsed

1000 Coss

Ta=25 C 7 VDD=15V ID=9A 6 RG=10 Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12

100

Crss 100

td(on)

10
tr

10 0.01

0.1

10

100

1 0.01

0.1

10

100

DRAIN-SOURCE VOLTAGE : VDS (V)

DRAIN CURRENT : I D (A)

TOTAL GATE CHANGE: Qg (nC)

Fig.1 Typical Capacitance vs. Drain-Source Voltage

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

100

Ta=25 C pulsed
SOURCE CURRENT : Is (A)

100

VGS=0V Pulsed Ta=25C 25C 75C 125C

DREIN CURRENT : ID(A)

ID=9A

10

0.1 Ta=125C 75C 25C 25C

50

0.01

ID=4.5A

0.1

VDS=10V 0.001 Pulsed 0.0 0.5 1.0

1.5

2.0

2.5

3.0

3.5

0 0

0.01

10

12

14

16

0.5

1.0

1.5

GATE - SOURCE VOLTAGE : VGS(V)

GATE-SOURCE VOLTAGE : VGS (V)

SOURCE-DRAIN VOLTAGE : VSD(A)

Fig.4 Typical Transfer Characteristics

Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

Fig.6 Source-Current vs. Source-Drain Voltage

10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

1000 Ta=125C 75C 25C 25C

1000 Ta=125C 75C 25C 25C

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (m)

VGS=10V Pulsed

10000

VGS=4.5V Pulsed

10000

VGS=4V Pulsed

1000 Ta=125C 75C 25C 25C

100

100

100

10

10

10

1 0.1

1 DRAIN CURRENT : I D(A)

10

1 0.1

1 DRAIN CURRENT : I D(A)

10

1 0.1

1 DRAIN CURRENT : I D(A)

10

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1)

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2)

Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (3)

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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