Preliminary

SemiWell Semiconductor Bi-Directional Triode Thyristor

Symbol

BT134-F

Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt

2.T2

3.Gate

1.T1

General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

TO-126

Absolute Maximum Ratings

Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG

( TJ = 25C unless otherwise specified ) Condition Ratings

600 TC = 104 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms 4 25/27 3.1 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150

Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature

Units
V A A A2 s W W A V C C

Nov, 2003. Rev. 0

copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

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BT134-F
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 5.0 5 1.5 2.5 3.5 V VD = 6 V, RL=10 25 70 1.5 1.5 V

Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 5 A, Inst. Measurement

Ratings Min.

Typ.

Max.
0.5 1.7 25 25

Unit

IDRM VTM I+GT1 I -GT1

mA V

mA

V/
mA C/W

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BT134-F
Fig 1. Gate Characteristics
10
1

Fig 2. On-State Voltage

10
2

VGK = 5V PGK = 5W

On-State Current [A]

PG(AV) = 0.5W

Gate Voltage [V]

10

25 IGM=2A
10
0

125 C 10
0

25 C

VGD = 0.2V
10
-1

10
1

-1

10

10

10

0.5

1.0

1.5

2.0

2.5

3.0

Gate Current [mA]

On-State Voltage [V]

Fig 3. On State Current vs. Maximum Power Dissipation

7 6 130

Fig 4. On State Current vs. Allowable Case Temperature

Power Dissipation [W]

= 150

o o

5
360

= 120 = 90 = 60 = 30
o

= 180

Allowable Case Temperature [ C]

120

4 3 2 1 0 0

: Conduction Angle

o o

110

= 30 = 60 = 90

o o

360

o o o

= 120

100 0

: Conduction Angle

= 150 o = 180

RMS On-State Current [A]

RMS On-State Current [A]

Fig 5. Surge On-State Current Rating ( Non-Repetitive )

Fig 6. Gate Trigger Voltage vs. Junction Temperature

35

10

30

Surge On-State Current [A]

25 60Hz

20

VGT (25 C)

VGT (t C)

15 50Hz

10

0 0 10

10

10

10

0.1 -50

50

100
o

150

Time (cycles)

Junction Temperature [ C]

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BT134-F
Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance

10

10

IGT (25 C)

I I
1

+ GT1 GT1 GT3

Transient Thermal Impedance [ C/W]

IGT (t C)

10

+ GT3

0.1 -50

10 0 50 100
o

-1

150

10

-3

10

-2

10

-1

10

10

10

Junction Temperature [ C]

Time (sec)

Fig 9. Gate Trigger Characteristics Test Circuit

10

10

10

10

6V

6V

6V

RG
6V

RG

RG

RG

Test Procedure

Test Procedure

Test Procedure

Test Procedure

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BT134-F
TO-126 Package Dimension mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 0.055 0.126 1.5 0.047 0.091 0.181 0.024 0.034 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 0.150 0.098 0.059 Inch Typ. Max. 0.311 0.441 0.579 0.114

Dim. A B C D E F G H I J K L

A E B

F 3 C 2 1

1. Gate 2. T2 3. T1
J K

H I

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BT134-F
TO-126 Package Dimension, Forming

Dim. A B C D E F G H I J K L M

mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 5.0 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106

Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.197 0.126

A E B

F 3 C 2 1 M J H I

1. Gate 2. T2 3. T1
K

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