Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1265N

DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol

Absolute maximum ratings(Ta=25)

SYMBOL VCBO VCEO VEBO IC IB
B

PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector

CONDITIONS

VALUE -140 -140 -5 -10 -1 100 150 -55~150

UNIT V V V A A W

PT Tj Tstg

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

2SA1265N

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-50mA ,IB=0

-140

VCEsat VBE

Collector-emitter saturation voltage

IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V

-0.8

-2.0

Base-emitter voltage

-1.0

-1.5

V A A

ICBO

Collector cut-off current

VCB=-140V; IE=0

-5

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-5

hFE-1

DC current gain

IC=-1A ; VCE=-5V

55

160

hFE-2

DC current gain

IC=-5A ; VCE=5V

35

fT Cob

Transition frequency

IC=-1A ; VCE=-5V IE=0 ; VCB=10V ;f=1MHz

30

MHz

Output capacitance

480

pF

hFE-1 Classifications R 55-110 O 80-160

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

PACKAGE OUTLINE

2SA1265N

Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1265N