SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.) CONSTRUCTION * PNP Switching Transistor * Power driver and Dc to DC convertor . 2003-8 * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. CIRCUIT MARKING * hFE Classification Q: Q72 P: 772 E: E72 Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. Dimensions in millimeters SC-62/SOT-89 SC-62/SOT-89 THERMAL CHARACTERISTICS ( At TA = 25 o C unless otherwise noted ) NOTES : CHARACTERISTICS CONDITION SYMBOL UNITS 357 o C / W Thermal Resistance (Junction to Ambient) Note 1 MAXIMUM RATINGES ( At TA = 25 o C unless otherwise noted ) RATINGS CONDITION Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Open Emitter Open Base Open Collector Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation TA 25 O C; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature SYMBOL VCBO VCEO VEBO IBM R JA TAMB TJ TSTG ICM IC MIN. MAX. UNITS - -40 Volts Volts Volts Amps Amps Amps mW o C o C o C - -30 - -5 - -3 - -3 - -0.5 - 1500 -55 +150 - +150 -55 +150 VALUE PTOT 1. Transistor mounted on an FR4 printed-circuit board 1.6"X1.6"X0.06". 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 1.7MAX. 4.6MAX. 4 . 6 M A X . 0.4+0.05 1.6MAX. 2 . 5 + 0 . 1 0 . 8 M I N . +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 3 2 1 E C B 1 2 3 1 Base 2 Collector ( Heat Sink ) 3 Emitter RATING CHARACTERISTIC CURVES ( 2SB772PT ) CHARACTERISTICS ( At TA = 25 o C unless otherwise noted ) PARAMETERS CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain IE=0; VCB=-30V IC=0; VEB=-3V VCE=-2V; Note 1 IC=-0.02A IC=-1.0A; Note 2 Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A Base-Emitter Saturatio Voltage IC=-2A; IB=-0.2A IE=ie=0; VCB=-10V; f=1MHz IC=-0.1A; VCE=-5.0V; f=100MHz Collector Capacitance Transition Frequency SYMBOL ICBO IEBO hFE CC fT VBEsat VCEsat MIN. MAX. TYPE UNITS - -1.0 uA uA
Volts Volts pF MHz - - -1.0 - 30 100 - 500 - 160 - -0.5 -0.3 - -2.0 -1.0 - - 55 100 - - SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS CONDITION Turn-on Time -IB1=IB2=0.05A Duty cycle<1% Storage Time Fall Time SYMBOL ton tf ts MIN. MAX. TYPE UNITS - - uSec uSec uSec 0.1 - - 1.0 - - 0.1 Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500. IB1 IB2 -30V OUTPUT INPUT 3 0 o h m S 20uSec IB1 IB2 RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics -0.1 -0.3 -1.0 -3.0 -10 -30 -100 1 10 100 3000 1000 COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V) C O L L E C T O R
C A P A C I T A N C E
C C
( p F ) Figure 1. CC - Reverse VCB -1 -10 -100 -1000 1 10 100 3000 1000 COLLECTOR CURRENT IC (mA) C U T O F F
F R E Q U E N C Y
( M H z ) Figure 2. Cutoff Frequency - IC VCE=-5V -10 -30 -100 -300 -1000 -3000 -0.1 -0.3 -0.5 -1 -3 -5 -10 COLLECTOR CURRENT IC (mA) B A S E - E M I T T E R
S A T U R A T I O N
V O L T A G E V B E ( s a t) ( V ) Figure 6. VBE(sat) - IC COMMON EMITTER IC/IB=10 -10 -30 -100 -300 -1000 -3000 -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -1 COLLECTOR CURRENT IC (mA) C O L L E C T O R - E M I T T E R
S A T U R A T I O N
V O L T A G E
V C E ( s a t)
( V ) Figure 5. VCE(sat) - IC COMMON EMITTER IC/IB=10 -10 -30 -100 -300 -1000 -3000 10 30 50 100 300 500 1000 COLLECTOR CURRENT IC (mA) D C
C U R R E N T
G A I N
h F E Figure 3. hFE - IC COMMON EMITTER VCE=-2V 0 20 0. 2 0. 4 40 0. 6 0. 8 60 1. 0 80 1. 2 1. 4 1. 5 100 120 140 160 0 AMBIENT TEMPERATURE TA ( O C) C O L L E C T O R
P O W E R
D I S S I P A T I O N
P C
( W ) Figure 4. PC - TA (1) Mounted on ceramic substrate ( 250mm 2 x0.8t ) (2) No heat sink (2) (1) RATING CHARACTERISTIC CURVES ( 2SB772PT ) Typical Electrical Characteristics -0.1 -0.3 -1.0 -3.0 -10 -30 -100 -10 -30 -50 -100 -500 -300 -3000 -1000 -5000 -30000 -10000 COLLECTOR-EMITTER VOLTAGE VCE (V) C O L L E C T O R
C U R R E N T
I C
( m A ) Figure 9. Safe Operation Area Single nonrepetitive pulse TA=25 O C Curve must be derated linearly with increase in temperature Tested without a substrate 1S 100 mS 1 mS