2010 4 1 NEC

http://www.renesas.com

2010 4 1

http://www.renesas.com
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1.

2.

3.

4.

5.

6.

7.

OA AV

8.

9.

10.

RoHS

11.

12.

1.

2.

Silicon Power Transistors

2SA1647,2SA1647-Z
PNP

mm

2SA1647

6.5 0.2

DC-DC

5.0 0.2

0.5 0.1

13.7 MIN.

ZIC

7.0 MIN.

5.5 0.2

2.3 0.2

1.6 0.2

1.5 0.1

+0.2

0.5 0.1

1.1 0.2

+0.2

+0.2

0.5 0.1

2.3 2.3
0.75

VCE(sat) = 0.3 V MAX.IC = 3 A

tf = 0.4 s MAX.IC = 3 A

TO-251MP-3

TA = 25C
4.4 0.2

VCEO

100

VEBO

7.0

IC(DC)

5.0

10

2.5

18

IC(pulse)

IB(DC)

PT(TC = 25)

PT(TA = 25) 1.0

Tj

Tstg

1.

, 2.0

1 2 3

0.5 0.1
0.5 0.1
2.3 0.3

55150

TO-252MP-3Z

PW 10 ms, Duty Cycle 50

3.

2
7.5 cm 0.7 mm

2.3 0.3

0.15 0.15

150

2.

2.3 0.2
0.5 0.1

1.0 0.5
0.4 MIN.
0.5 TYP.
2.5 0.5

1.5 0.1

150

9.5 0.5

5.0 0.2

VCBO

5.6 0.3

5.5 0.2

+0.2

6.5 0.2

1.
2.
3.
4.

00.2 mm

D14839JJ5V0DS005
June 2006 NS CP(K)

1993, 2000

"" PDF

2SA1647,2SA1647-Z
TA = 25C

MIN.

TYP.

MAX.

VCEO(SUS)

IC = 2.5 A, IB = 0.25 A, L = 1 mH

100

VCEX(SUS)

IC = 2.5 A, IB1 = IB2 = 0.25 A

100

VBE(OFF) = 1.5 V, L = 180 H, Clamped

ICBO

VCE = 100 V, IE = 0 A

10

ICER

VCE = 100 V, RBE = 50 , TA = 125

1.0

mA

ICEX1

VCE = 100 V, VBE(OFF) = 1.5 V

10

ICEX2

VCE = 100 V, VBE(OFF) = 1.5 V, TA = 125

1.0

mA

IEBO

VEB (OFF) = 5.0 V, IC = 0 A

10

FE1

VCE = 2.0 V, IC = 0.5 A

100

FE2

VCE = 2.0 V, IC = 1.0 A

100

FE3

VCE = 2.0 V, IC = 3.0 A

60

VCE(sat)1

VCE(sat)2

400

IC = 3.0 A, IB = 0.15 A

0.3

IC = 4.0 A, IB = 0.2 A

0.5

BE(sat)1

IC = 3.0 A, IB = 0.15 A

1.2

BE(sat)2

IC = 4.0 A, IB = 0.2 A

1.5

Cob

VCB = 10 V, IE = 0 A, f = 1.0 MHz

110

pF

fT

VCE = 10 V, IE = 0.5 A

90

MHz

ton

IC = 3.0 A, RL = 17

0.3

tstg

IB1 = IB2 = 0.15 A, VCC 50 V

1.5

tf

0.4

PW350 s, Duty Cycle2%/Pulsed

hFE

hFE2

100200

150300

200400

RL = 17

VIN

IB1

TUT
IB2

IB2

IC

IB1
VCC 50 V
10

IC
90

PW
PW 50 s
Duty Cycle2

VBB 5 V

ton

D14839JJ5V0DS

tstg tf

2SA1647,2SA1647-Z
TA = 25C

15
12

50

40

ICA

TC = 25

IC(DC)
Di

PW
ss

1.0

ipa

10

tio

nL

im

ite

DC

S/

Lim

ite

0.1

10

1000
rthjC
t/W

FORWARD BIAS SAFE OPERATING AREA

10

COLLECTOR CURRENT vs. COLLECTOR TO

EMITTER VOLTAGE

0.1
1m

3
2

IB = 50 mA
45 mA
40 mA
35 mA
30mA
25 mA
20 mA
15 mA
10 mA

TRANSIENT THERMAL RESISTANCE

TC = 25

RthjA = 125/W

RthjC = 6.94/W

10 m 100 m

10

100

1000 10000

PWs

DC CURRENT GAIN vs. COLLECTOR CURRENT

1000
VCE = 2 V

TA = 125
hFE

ICA

150

1.0

100

10

100

50

100

VCEV

10

ite

TC

TC

IC(pulse)

im

20

150

100

bL

d
ite

60

S/

m
Li

80

n
io
at
ip

100

ss
Di

PTW

DERATING CURVE OF
SAFE OPERATING AREA

ICdT

18

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

25
40

100

5 mA

1
0

1 2 3 4 5 6 7 8 9 10

10
0.01

VCEV

D14839JJ5V0DS

0.1

10

ICA

2SA1647,2SA1647-Z

10

IC/IB = 20

1.0

TA = 125
25
40

0.1

0.01

0.1

1.0

10

100

VBEsatV

VCEsatV

10

COLLECTOR SATURATION VOLTAGE vs.

COLLECTOR CURRENT

0.1

CobpF

1000

fT

100

30

TA = 125
25

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

300

IC/IB = 20

125

ICA

1000

BASE SATURATION VOLTAGE vs.

COLLECTOR CURRENT

0.1
1
10
ICA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

100

10
10
0.03

0.1

0.3
1
3
ICA

10

4
0.005 0.01 0.1
1
10
100
VCBV

tons

tstgs

tfs

TURN ON TIME, STORAGE TIME AND FALL TIME

vs. COLLECTOR CURRENT
10
IC = 20IB1 = 20IB2

tstg

1.0

ton
tf

0.1

0.1

1
10
ICA

100

D14839JJ5V0DS

1000

2SA1647,2SA1647-Z

20066

OAAV

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