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Contents
Why Graphene ?
Structure
Fabrication technology
Grapheme Based Devices
Challenges
Conclusion
Acknowledgement
Why Graphene?
Si technology tending towards its
scaling limits.
For RF apps HEMTs (III-V group) are
too expensive.
Very high mobility of graphene.
Light weight and size compare to Si.
High saturation velocity
3
GRAPHENE: Structure
Hexagonal structural element of some
carbon allotropes including graphite,
charcoal, carbon nanotubes and fullerenes
Each atom forming 3 bonds with each of
its nearest neighbors known as the sigma
bonds.
a) Fullerene b) Nanotub
c) Graphite
Fourth valence electron is in the 2pz state
GRAPHENE: Poperties
ELECTRONIC PROPERTIES
High Electron Mobility at room temperature,
with reported values in excess of 15,000 cm/Vs.
Intrinsic graphene is a zero-gap semiconductor
Low resistivity and better current capacity & temperature conductivity
Graphene is estimated to operate at terahertz frequencies
i.e. trillions of operations per second.
OPTICAL PROPERTIES
An unexpectedly high opacity for an atomic
monolayer,
it absorbs = 2.3% of white light,
where is the fine-structure constant.
MECHANICAL PROPERITIES
Strongest materials ever tested
Breaking strength 200 times greater than steel, a bulk
strength of130GPa.
Fabrication
Technology
Mechanical
exfoliation of
graphite on SiO2/Si
A.
B.
Fabrication
Technology
Confinement Controlled
Sublimation of Silicon Carbide
(A) SiC wafer in
UHV
(B)The CCS method
(C) Photograph of the
induction furnace
Band Diagram of
Graphene
10
Available online :- http://www.lbl.gov/publicinfo/newscenter/pr/2008/ALS-graphene-electrons.
Conductance profile
1)Min. conductivity is a result
of charge inhomogeneity in
the form of Electron hole
puddle.
2.) Electrical thermal
annealing
improves the conductivity
by
removing the residual
impurities
FIG- blue curve- conductance before annealing
on the surface of
red curve conductance after annealing
graphene
12
Transfer characteristic
comparision
13
Output Characteristic
Comparison
14
Graphene CMOS
FIG:-Integrated complementary
graphene inverter
a)Schematic of a CMOS
transistor
b)SEM image of the fabricated
inverter
Traversi
F, Russo
V and Sordan R 2009 Integrated complementary
c)Circuit
layout
graphene inverter
15
16
Fig:
Fig:
2 i/p logic gate incoporating
Transfer curve R
v/s Vg of a
one monolayer graphene
mono-layer
graphene
transistor
Roman Sordan et al., Logic Gates with a single graphene
.
transistor", Applied Physics Letters 94, 073305 (2009)
18
Conclusion
Zero bandgap semiconductor(not
suitable for logic application)
Large area graphene channels
cant be switched off.
Nanoribbon graphene has serious
fabrication issues
Lack of mathematical proofs of
most of the properties.
19
REFERENCES
A. K. Geim and K. Novoselov, The Rise of Graphene,
Nature Materials, vol. 6, pp. 183191, 2007.
A. K. Geim, Graphene: Status and Prospects, Science,
vol. 324, no. 5934, pp. 15301534, 2009.
W. A. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Y. Hu,
B. Zhang, J. Hankinson and E. H. Conrad, Large Area and
Structured Epitaxial Graphene Produced by Confinement
Controlled Sublimation of Silicon Carbide, Proceedings
National Academy of Sciences USA, Vol. 108, No. 41, 2011,
pp. 16900-16905.
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y.
Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov,
Electric field effect in atomically thin carbon films,
Science, vol. 306, no. 5696, pp. 666669, Oct. 2004
20
REFERENCES
D. Reddy, L.F. Register, G.D. Carpenter, S.K.
Banerjee.,Graphene field-effect transistors,J. Phys. D:
Appl. Phys., 44, P. 313001 (20p.) (2011).
Lemme M C, Echtermeyer T J, Baus M and Kurz H 2007
A graphene field-effect device, IEEE Electron Device
Lett.28 2824
Roman Sordan et al., Logic Gates with a single graphene
transistor,",Applied Physics Letters 94, 073305 (2009)
Traversi F, Russo V and Sordan R 2009 Integrated
complementary graphene inverter, Appl. Phys. Lett. 94
223312
21
Acknowledgement
I
am sincerely thankful to To
Prof. P.K BASU
22
Thank you
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