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  • NTE2636 Silicon NPN Transistor Horizontal Deflection /internal Damper Diode

    Enviado por

    Randall Chinchilla
    19 visualizações2 páginas
    The document describes the NTE2636 silicon NPN transistor, which features a high breakdown voltage of 1500V and an internal damper diode. It is intended for use in horizontal deflection output applications in TVs and character displays. The transistor has maximum ratings for collector-emitter voltage, currents, and power dissipation. It also provides typical electrical characteristics including emitter-base breakdown voltage, current transfer ratio, saturation voltages, and fall time.

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    salida horizontal

    Título original

    Nte 2636

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    The document describes the NTE2636 silicon NPN transistor, which features a high breakdown voltage of 1500V and an internal damper diode. It is intended for use in horizontal deflection output applications in TVs and character displays. The transistor has maximum ratings for collector-emitter voltage, currents, and power dissipation. It also provides typical electrical characteristics including emitter-base breakdown voltage, current transfer ratio, saturation voltages, and fall time.

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    © All Rights Reserved
    Baixe no formato PDF, TXT ou leia online no Scribd
    Sinalizar o conteúdo como inadequado
    19 visualizações2 páginas

    NTE2636 Silicon NPN Transistor Horizontal Deflection /internal Damper Diode

    Enviado por

    Randall Chinchilla
    The document describes the NTE2636 silicon NPN transistor, which features a high breakdown voltage of 1500V and an internal damper diode. It is intended for use in horizontal deflection output applications in TVs and character displays. The transistor has maximum ratings for collector-emitter voltage, currents, and power dissipation. It also provides typical electrical characteristics including emitter-base breakdown voltage, current transfer ratio, saturation voltages, and fall time.

    Direitos autorais:

    © All Rights Reserved
    Baixe no formato PDF, TXT ou leia online no Scribd
    Sinalizar o conteúdo como inadequado
    de 2

    NTE2636

    Silicon NPN Transistor


    Horizontal Deflection w/Internal Damper Diode
    Features:
    D High Breakdown Voltage: VCES = 1500V
    D BuiltIn Damper Diode
    D Isolated TO3PFM Type Package
    Applications:
    D TV/Character Display Horizontal Deflection Output
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
    Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
    Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
    CollectorEmitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
    Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    EmitterBase Breakdown Voltage

    Symbol

    Test Conditions

    V(BR)EBO IE = 500mA, IC = 0

    Min

    Typ

    Max

    Unit

    V
    A

    Collector Cutoff Current

    ICES

    VCE = 1500V, RBE = 0

    500

    DC Current Transfer Ratio

    hFE

    VCE = 5V, IC = 1A

    25

    CollectorEmitter Saturation Voltage

    VCE(sat)

    IC = 6A, IB = 1.2A

    BaseEmitter Saturation Voltage

    VBE(sat)

    IC = 6A, IB = 1.2A

    1.5

    IF = 8A

    2.0

    ICP = 6A, IB1 = 1.2A, IB2 ` 2.4A,


    f H = 31.5kHz

    0.5

    CollectorEmitter Diode Forward Voltage


    Fall Time

    VECF
    tf

    .217 (5.5)

    .615 (15.62)

    .197
    (5.0)
    Isol
    .126
    (3.22)
    Dia

    .783
    (19.9)

    .197
    (5.0)
    .126 (3.2)
    .827
    (21.0)

    .215 (5.47)

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