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  • Re: Chemical-Mechanical Planarization (CMP) Process

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    Naveen Silveri
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    Chemical-mechanical planarization (CMP) is a process that uses both chemical and mechanical methods to smooth and planarize wafer surfaces. As wafer sizes and number of metal layers increase, achieving global planarity across the wafer is crucial. The CMP process involves polishing the wafer surface using a slurry and polishing pad, where the abrasive slurry particles grind the surface and loosen material while the slurry chemicals etch and dissolve the material, resulting in a smoothed surface. CMP is widely used to planarize inter-layer dielectrics and metal layers.

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    Chemical-mechanical planarization (CMP) is a process that uses both chemical and mechanical methods to smooth and planarize wafer surfaces. As wafer sizes and number of metal layers increase, achieving global planarity across the wafer is crucial. The CMP process involves polishing the wafer surface using a slurry and polishing pad, where the abrasive slurry particles grind the surface and loosen material while the slurry chemicals etch and dissolve the material, resulting in a smoothed surface. CMP is widely used to planarize inter-layer dielectrics and metal layers.

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    15 visualizações1 página

    Re: Chemical-Mechanical Planarization (CMP) Process

    Enviado por

    Naveen Silveri
    Chemical-mechanical planarization (CMP) is a process that uses both chemical and mechanical methods to smooth and planarize wafer surfaces. As wafer sizes and number of metal layers increase, achieving global planarity across the wafer is crucial. The CMP process involves polishing the wafer surface using a slurry and polishing pad, where the abrasive slurry particles grind the surface and loosen material while the slurry chemicals etch and dissolve the material, resulting in a smoothed surface. CMP is widely used to planarize inter-layer dielectrics and metal layers.

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    © All Rights Reserved
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    Re: Chemical-mechanical planarization (CMP)

    process
    As the number of metal levels and the wafer size increase, the need of global planarity across the
    wafer becomes more crucial.
    Chemical Mechanical Planarization/Polishing (CMP) is a process of smoothing surfaces with the
    combination of chemical and mechanical processes.
    During the CMP process, a wafer surface is polished for planarization using a slurry and a polishing
    pad. The abrasive particles in the slurry grind against the sample surface, that results in loosening
    material. The chemicals in the slurry then etch and dissolve the material.
    CMP is widely used for inter-layer dielectrics (ILD) and metal layer planarization.

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