P0603BDG

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

TO-252 (DPAK)
Lead-Free

D
PRODUCT SUMMARY
V(BR)DSS

RDS(ON)

ID

30

6.5m

75A

1. GATE
2. DRAIN
3. SOURCE

G
S

ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
TC = 25 C

Continuous Drain Current

1

Repetitive Avalanche Energy

VGS

20

75
50
170

IAS

40

L = 0.1mH

EAS

140

L = 0.05mH

EAR

5.6

TC = 25 C

Power Dissipation

UNITS

IDM

Avalanche Current
Avalanche Energy

LIMITS

ID

TC = 100 C
Pulsed Drain Current

SYMBOL

Operating Junction & Storage Temperature Range

1

Lead Temperature ( /16 from case for 10 sec.)

mJ

60

PD

TC = 100 C

32.75

Tj, Tstg

-55 to 150

TL

275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

Junction-to-Case

RJC

2.3

Junction-to-Ambient

RJA

62.5

Case-to-Heatsink

RCS

UNITS

C / W

0.6

Pulse width limited by maximum junction temperature.

Duty cycle 1

ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
UNIT
MIN TYP MAX

STATIC
Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

30

VGS(th)

VDS = VGS, ID = 250A

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

VDS = 20V, VGS = 0V, TJ = 125 C

25

Gate Threshold Voltage

V
1.5

3
nA
A

APR-03-2006

P0603BDG

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM
On-State Drain Current1

ID(ON)

Drain-Source On-State
Resistance1

RDS(ON)

Forward Transconductance1

VDS = 10V, VGS = 10V

gfs

TO-252 (DPAK)
Lead-Free
70

VGS = 10V, ID = 30A

5.3

6.5

VGS = 5V, ID = 24A

7.6

9.5

VDS = 15V, ID = 30A

19

m
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

280

Total Gate Charge2

Qg

28

Gate-Source Charge

Gate-Drain Charge2
Turn-On Delay Time

2679
VGS = 0V, VDS = 15V, f = 1MHz

Qgs

VDS = 15V, VGS = 10V,

10

Qgd

ID = 25A

15

td(on)
tr

VDS = 15V,

Turn-Off Delay Time2

td(off)

ID 30A, VGS = 10V, RGS = 2.7

32

Fall Time2

nC

11

Rise Time

pF

1040

tf

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C)

Continuous Current

IS

75

Pulsed Current

ISM

170

Forward Voltage1

VSD

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

IF = IS, VGS = 0V

trr
IRM(REC)

IF = IS, dlF/dt = 100A / S

1.3

A
V

20

nS

200

nC

Qrr

Pulse test : Pulse Width 300 sec, Duty Cycle 2.

Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2

REMARK: THE PRODUCT MARKED WITH P0603BDG, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.

APR-03-2006

NIKO-SEM

P0603BDG

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

TO-252 (DPAK)
Lead-Free

TYPICAL CHARACTERISTICS

BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND

TEMPERATURE
60
VGS = 0V
TA = 125C

IS ,REVERSE DRAIN CURRENT( A )

10

1
25C
0.1
-55C
0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V SD,BODY DIODE FORWARD VOLTAGE( V )

APR-03-2006

NIKO-SEM

G a te C h a r g e C h a r a c te r is tic s
12

10

ID = 2 5 A

C-Capacitance (pF)

VGS ,Gate-Source Voltage (V)

10

V DS =5V
8

10

10V

15V

P0603BDG

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

10

TO-252 (DPAK)
Lead-Free

C a p a c ita n c e C h a r a c te r is tic s

C is s
C oss

C rs s
2

f = 1 MHz
V GS= 0 V

0
0

10

20
Q g ,G a te C h a r g e ( n C )

30

10

15

20

25

30

V D S - D r a in - to - S o u r c e V o la g e ( V )

APR-03-2006

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

NIKO-SEM

P0603BDG
TO-252 (DPAK)
Lead-Free

TO-252 (DPAK) MECHANICAL DATA

mm

mm

Dimension

Dimension
Min.

Typ.

Max.

Min.

Typ.

Max.

9.35

10.4

0.89

2.03

2.2

2.4

6.4

6.6

0.45

0.6

5.2

5.5

0.89

1.5

0.6

0.45

0.69

0.5

0.9

0.03

0.23

4.4

4.6

5.2

6.2

2
1

APR-03-2006