Bem-vindo(a) ao Scribd!

Deposition and Characterization of Aluminum Doped Zinc Oxide Films

Enviado por

0% acharam este documento útil (0 voto)

19 visualizações1 página

Transparent conducting aluminum doped zinc oxide (ZnO:Al) thin films were deposited by rf magnetron sputtering using two different targets. These targets were used to produce films doped by two different methods: (i) a ZnO ceramic target with three small aluminum plates on the surface and (ii) a commertial ceramic target ZnO mixtured with 2 wt% Al2O3. All films doped using process (i) presented good crystallinity and a very strong preferred orientation of crystallites (texture) mostly in the (002) direction perpendicular to the substrate. When the deposition pressure was increased, the optical band gap decreased (3,36–3,17 eV) and the electrical resistivity reach its minimum valor (5.24 x 103 Ω.cm). In spite of the films have presented optic transmittance around 85%, the high electrical resistivity measured for films deposited with this method is not effective to obtain transparent conducting aluminum doped zinc oxide. By the other side, for the process (ii), it was observed that, the power density and deposition pressure influenced the optic transmittance of the films of ZnO:Al, that varied between 86% and 90% and, when the deposition pressure increased from 0.8 to 8.0 Pa, grain sizes of the films increased and the minimum electrical resisivity reached was 3.83 x 10−3 Ω.cm (8.0 Pa and 6.80 W/cm2). For pressures above 8.0 Pa, it was observed a small increase of the electrical resistivity and there was a light trend of grain size to decrease.