uy Communication System, Control System, Microwave __ ELECTRONICSENGG. Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar SI.No.: 250513 IES-2013 EC: ELECTRONICS ENGINEERING (Test Series-5) Conventional (Communication System, Control System, Microwave) Sol.t (a) Characteristic equation for the given system is 1+G(s)H(s) = 0 Kis+40) 1 ~ 1+ ge410) (+20) 79 = s{s + 10) (s + 20) + K (s + 40) = 0 = sls? +208 + 10s + 200]+ Ks + 40K = 0 = 82+ 80s? + (200 + K)s40K = 0 Now Routh array for this equation is as shown below s 1 (200 + K) st 2 40K «1 30x(200 1 K)<40K 30 eo 40 K For marginal or lifting value of K s* row should be equal to zero. 80(200 4 Kay) 40 Kings = 0 > (8x 200480, 40K, = 0 30%200 Kya = 4g = 600 Ku = 600 Now taking half of above value, 300840) GIOHS) = FE T0(6+20) 300(40 + joo) = G@IMG0) = Fagan fO}Gu+ 25) “0 For gain crossover frequency 300x Vo? +1600 ‘Siero = Foo da +00 Thins Bost inate for 1S, GATE & PSU aayIES Offline Test Series -201: EST-S ELECTRONICS ENGG. Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar = 300074 1660 = ove? + 100.Va" +405 = (300) (w?4+-1600) = @%(a?+100)(a?+-400) put =x = (800)%x+1600) = x(x+ 100)(x+400) = £90000%+0000%1600 = x°+500%+40000 x = x +500x- 50000 x— 90000 x 1600=¢ On solving, x = 422.99, - 461.49, - 461.49 since x = w?, so discarding negative roots, hence 2 = 422.99 @,, = 20.56 radisec from equation (i), ZG(a)Hjo) ZGLjo) (0) | ney 27.2° 90° 264,06" 45.79° = -17265° Hence phase margin of the given system is. PM = Z6(@)H(a) | 4, +180" = PM = 6172.65" + 180° PM = 7.35" Sol.t (b) by. Gain of antenna, G= #(2) Sinee antenna uses a dipole feed so we shall take efficiency as 0.65 so gain of the antenna is 2 = n?x0.65%{2 G= x06: (2) i Here Thins Bost inate for 1S, GATE & PSU aayELECTRONICSENGG. __ Communication System, Control System, Microwave Bl Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar = G = 160000 Now. gainin dB = 10 log 0 log 160000 > Gy = 520B Given system noise figure Fg = 1dB = 10log F = logF = 0.4 = F = 10° ~ 1.26 Now equivalent noise temperature is given as T, = TalF=1) = T, = 290°(1.26-1) = T= 784° . Toye) = 10 0g 75.4 = 18.77 6B) Hence G/T in dB is given as S ; (),,., ge Ag go)282-18.77 = 33.23 dBK: Sol.2 (a) Kis+2\s+3) GIS)HIS) = Kener) (i) Number of poles Number of zeros = Z = 2. (il) Numero! soparate root loci branches = P = 2 (il) Number of branches terminating at infinity =P-Z=2-2=0 {iv) Breakin and break away points: 1+ G(s)H(s) = 0 K(s+2)(s+3) _ = Weep 8 = 8(s+1) + K(s+2)(s+3) = 0 = st +54 K[s? +55 +6) =0 = k= Thins Bost inate for 1S, GATE & PSU aay4 IES Offline Test Series -201: EST-S ELECTRONICS ENGG. Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar Sol.2 aK __[[s? +5846)28+ 1-(6" +812845) as (s°+5s+6F To find break in and break away points, dk we have, Bo = (s? +5546) 25+1}-(5248) (28+ 5) => 28+ 105? + 128 +8? + 58 + 6 - (25% + Ss” + 25 + 5s) = 0 => 2s? 4 118? + 17846 - 25°75? 5s = 0 > 43? + 125+6=0 = 2s? +68 +3=0 On solving, 8 = - 0.634, - 2.366 Hore, breaking point = ~0.634 and breaking point = ~ 2.366 Hence root locus can be drawn as shown below: ) Refractive index for core = n, core diameter = 50 ym wavelength= = 0.80 um Refractive index for cladding = 1.51 Hencenumerical aperture NA = (n,2-n2)" = NA = [(1.55)- (1.512) => NA = (2.4025 - 2.2801)" = NA = 0.3498, \enumberis given as = ana) where a= core radius = 25 um on = 2 2610 v= 2 x25(0.9498) aay Thins Bost inate for 1S, GATE & PSUELECTRONICSENGG. __ Communication System, Control System, Microwave 8 Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar v= 6868 For step index profile approximate number of modes is. Sol.3 (a) Given, v, = 1000 1=3GHz d=1mm L=4em aN, Vor Pome 0.593% 10° Ve = 0.593x10°/1000 = 1.88 x 10" mis Hence de electron velocity is 1. Gap transit angle 2x x3x10? x10 = 4.88 10" Tred 2, Beam coupling coefficient : sin®g/2 _ sint/2 0/2 112 = 0.958 8. Input gap voltage V, to give maximum output voltage V,, Fonmaximum V,, J,(X) must be maximum, This means J,(X) = 0.582 at X = 1.841 Now the de transit angle between the cavities is ok Yo 8 = XBAI AIO gag 1.88x10 The maximum input votage Vis then given by 2MoX 2x 1000x 1.841 Vira = Bio ~~ (0.958)(40) Vina = 96.1 Thins Bost inate for 1S, GATE & PSU aay@ IES Offline Test Series -201: Delhi | Noida Bhopal | Hyderabad EST-S ELECTRONICS ENGG. Jaipur | Lucknow | Indore | Bhubaneswar 4, Bunching paramter : BMg, _ 0:958%96.1%40 = PiMbo, _ 9:958%96.140 X= OM 2% 1000 > X= 1.84 Sol.3 (b) b= -G,G,H, A= 1-(€G,G,G,H,H, -G,G,H,H, -G,-G,G,H, = 1+G,G,G,H.H, + G,G,H,H, + G,+6,G,H, Hence trom Mason's gian formula, we have OS) _ Pry + Pade Ris) a Here A,=A,=1 Os)_ «GG, + 6,G,G, RQ) ~ +6, +6,GH, +6644, Gost, Thins Bost inate for 1S, GATE & PSU aayELECTRONICSENGG. __ Communication System, Control System, Microwave m Delhi | Noida | Bhopal | Hyderabad | Jaipur | Lucknow | Indore | Bhubaneswar Sol.4 (a) Two valley modes of GaAs Gunn diodes: According to the energy band theory of the n-type GaAs, a high-mobilty lower valley is separated by an energy of 0.36 eV fram a low-mobility upper valley as shown below: Upper valley 2 Lower valley My = 0.088 = 8000 omtivs Consition Ac t036 ev band t Fotbidden ‘pane ce «100 > Valence band Electron densities in the lower and Upper valleys remain the same under an equilibrium condition When the applied electric fields lowerthan the electtic field is lower valley (E Vy-V= 2A If Mis the number of quantization levels then Mb=2A where '8 is the step size 2A > ey Now, quantization noise power 2ay p .&_\™ 4 m2 12NP so, signal to quantization noise ratio P_Ar/2 3 SN R= = 2-8 we Rg 4A 2 12M ‘As we knowithat, M=2 Bone 8am NR = See 2 SNR = 52F (N,Ale = 010d $+ 19100 2” (GN,Alg = 1.761 + 6.05 5 GN Pls =18+6n where ‘nis the number of bits For the given problem we will need same number of levels as for ~1 to+1 V range. Hence, (SN le = 18 +68 = 49.8 dB Thins Bost inate for 1S, GATE & PSU i aayELECTRONICS ENGG. Communication System, Control System, Microwave aq Delhi | Noida Bhopal | Hyderabad | Jaipur | Lucknow | Indore Bhubaneswar Sol.6 (c) O-Type M-Type 1. The DC magnetic field which is in paralie! with the DC electric field is sed merely to focus the electron beam The DC magnetic field (H) and the DC electric field (€) are perpendicular to each other. 2, In these tubes electrons receive potential energy from the de beam voltage before thoy arrive in the microwave interaction region, and this energy is converted into their kinetic energy, Tn these tubes, the electrons emilled by the cathode are accelerated by the electric fioid and gain velocity, but greater their velocity the more theif path is bent by the magnetic fie. 3. These are having slow wave structure and vary suitable for ampltication purpose. These Miype tubes are relatively efficient 4, The paramount O-iype tubes are Klystron (2cavity, Reflex Kiystron ete.) Helix TWT, coulped cavity TWT, forward wave amplifier (PWA), Backward wave ampltors or oscillators (BWA oF BO), Several commonly used NFiype tubes are magneto's, forwarchwave cross field amplifiors (FWCFAs), Backward wave crosstficld ampitirs (BWOFAs) or Amplitrons, Dématrons)Carcinotrons, Gyotrons ete 9000 (PSI pains Bost Ie for 1ES, GATE & PSUs vewimadeensy.in. | Ema: ifoamades