12/9/2015

504 Solid State

Processing and
Integrated Circuits
Laboratory
Final Report

Kai Xie
University of Southern California

University of Southern California

Ming Hsieh Department of Electrical Engineering
EE 504 Solid State Processing and Integrated Circuits
Laboratory
Professor Kian, Kaviani

Final Lab Report by Kai Xie

5380757961
12/09/2015
i

Table of Contents

0. a. List of Figures
b. List of Tables
c. List of Nomenclatures
1. Introduction
2. Abstract
3. Theory
3.1 Resistor
3.1.1 Transmission Line Measurement and Transfer Line Method
3.1.2 IC resistors
3.2 Diode
3.2.1 Built in Potential
3.2.2 Theoretical Graph
3.3 MOS Cap
3.3.1 Band Structure of a MOS Capacitor
3.3.2 Expected MOS Capacitor C-V Characteristics
3.4 MOSFET
3.4.1 Structure and assumption
3.4.2 Saturation Region
3.4.3 Saturation Velocity Vs
3.5 MOSFET Figure of Merit for DC characteristics
3.5.1 Tansconductance: gm
3.5.2 Output Conductance: gd
3.5.3 Voltage Swing
3.5.4 Channel Conductance: gc
3.5.5 Mobility of linear regime
4. Testing Results
4.1 Resistor
4.1.1 TLM
4.1.2 Rc and Rsh
4.1.3 Data and comparisons
4.2 Diode
4.2.1 I-V plot and semi-log I-V plot
4.2.2 Data extraction
4.2.3 Data obtained
4.3 MOS Cap
4.3.1 CV Relationship
4.3.2 Extraction of Oxide Thickness
4.3.3 Extraction of Nsub
4.3.4 Extraction of Oxide Charges
4.3.5 Flat Band Capacitance
4.3.6 Calculated all Data
4.3.7 Overall Important Extracted Data for Cap 1 & 2
4.4 MOSFET
4.4.1 Saturation Region I-V Curve
4.4.2 Extract Vth and

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ii

4.4.3 Extraction of Vs
4.4.4 Figure of Merit of Mosfets
4.4.4.1
Transconductance : gm
4.4.4.2
Output Conductance: gd
4.4.4.3
Voltage Swing
4.4.4.4
Channel Conductance (Linear Region)
5. Conclusion
6. Reference
7. Appendix
7.1 The Data
7.2 The Plot from Lab Measurements

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iii

List of Figures

Page

Figure 3.1.1 Test Structure of TLM

2
Figure 3.1.2 Transfer Line Measurement Sample Plot
2
Figure 3.1.3 three lengths of IC resistors in this lab
3
Figure 3.2.1 Cross Section of a PN Diode
3
Figure 3.2.2 Experimental I0 Vbias Curve
4
Figure 3.2.3 Experimental Ln (I0) Vbias Curve
4
Figure 3.3.1 Structure of a MOS Capacitor
5
Figure 3.3.2 Band Structure of a MOS Capacitor
5
Figure 3.3.3 (a) Flat Band Condition (b) Accumulation (c) Depletion (d) Inversion & Threshold .. 6
Figure 3.3.4 Experimental C-V characteristics
6
Figure 3.3.5 Shifted C-V Curve due to Oxide Charges
6
Figure 3.4.1 MOSFET Structure
7
Figure 3.4.2 Expected I-V characteristic of MOSFETs
7
Figure 3.4.3 Extraction of Threshold Voltage
8
Figure 3.4.4 Extraction of the Average Channel Mobility at Saturation
8
Figure 3.4.5 Extraction of Vs
9
Figure. 3.5.1 (a) gm extraction at a fixed Vds. (b) Finding the max gm and corresponding Vgs 9
Figure 3.5.2 Extraction of Drain to Source Voltage
10
Figure 3.5.3 gd vs. Vgs in Saturation
10
Figure 3.5.4 Extraction of Voltage Swing
11
Figure 3.5.5 Extraction of mobility of linear regime
11
Figure 4.1 TLM Model used in this analysis
12
Figure 4.2 TLM Resistor Ladder and spacing
12
Figure 4.3 P-N Diode I-V Characteristic
14
Figure 4.4 Plot of P-N diode Ln(I)-V Characteristic
14
Figure 4.5 Linear Fit Plots and Equations, left diode1, right diode2
15
Figure 4.6 CV measurements for Caps
16
Fig. 4.4.1 Saturation Region I-V curve
20
Fig. 4.4.2 Vds = 14, sqrt(Ids) vs Vgs, w = 40 um
21
Fig. 4.4.3 Vds = 14, sqrt(Ids) vs Vgs, w = 80 um
22
Fig. 4.4.5 Id vs Vgs for two Mosfet, Blue- 80um, Orange 40um
23
Fig. 4.4.6 gm/w (mS/mm) vs Vgs (V), w = 80um
24
Fig. 4.4.7 gm/w (mS/mm) vs Vgs (V), w = 40um
25
Fig. 4.4.8 gm/w vs Vgs (V), w = 40um
26
Fig. 4.4.9 gd/w vs Vgs (V), w = 80um
27
Fig. 4.4.10 gm/gd vs Vgs[V], Blue is 40 um, Orange is 80 um
28
Fig. 4.4.11 Linear Region of Mosfet
29
Fig. 4.4.12 gc vs Vgs for 40um
30
Fig. 4.4.13 gc vs Vgs for 80um
31

iv

List of Tables
Table 4.1 Obtained data from TLM Resistor
Table 4.2 Calculated Rsh and Rc from graph
Table 4.3 Obtained data of resistors with other Lengths
Table 4.4 Measured Data for Diode 1
Table 4.5 Measured Data for Diode 2
Table 4.6 Data of Cap 1
Table 4.7 Data of Cap 2
Table 4.8 Comparison of Cap1 & Cap2
Table 4.4.1 Vth and mobility of Mosfet
Table 4.4.2 gm calculation, w = 80 um
Table 4.4.3 gm calculation, w = 40 um
Table 4.4.4 gd calculation, w = 40 um
Table 4.4.5 gd calculation, w = 80 um
Table 4.4.6 gm/gd for 40 um
Table 4.4.6 gm/gd for 80 um
Table 4.4.7 extracted gc values
Table 4.4.8 extracted gc values

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List of Nomenclatures
Vth
Vgs
Vds
n1, n2, n3
I0
Vbi
RT
Rsh
Rc
Rm
Rs
n
Nn
Pp
ni
k
T
q
d
A
Nsub
VFB
MS
M
S
Eg
Xsi
f
CFB
Ld
tox
0
ox
si
Qss
Nf
Id
Cox

Vs
gm
gd
gc

Threshold Voltage (V)

Gate to Source Voltage (V)
Drain to Source Voltage (V)
Ideality Factors for diode junction quality
Reverse Saturation Current for diode (A)
Barrier Height Voltage for diode (V)
Total Resistance ()
Sheet Resistance ()
Ohmic Contact Resistance ()
Resistance due to contact metal ()
Resistance due to doped layer ()
Ideality Factor
Minority-carrier electron concentration (cm-3)
Minority-carrier hole concentration (cm-3)
Intrinsic concentration of electrons (cm-3)
Boltzmanns constant (J/K)
Temperature (K)
Charge (C)
Resistor Length (um)
Resistor Crossing Section Area (um2)
Substrate Concentration (cm-3)
Flat-Band Voltage (V)
Metal-semiconductor work function (V)
Metal work function (V)
Semiconductor work function (V)
Band gap energy (eV)
Electron affinity for Silicon (V)
Potential Difference between Efi and Ef (V)
Flat-Band Capacitance (F)
Debye Length (cm)
Gate oxide thickens (cm)
Permittivity of free space (F/cm2)
Relative Permittivity of oxide
Relative Permittivity of silicon
Equivalent trapped oxide charge (C)
The number of charge per unit area of the capacitor (cm-2)
Mosfet drain to source current
Gate oxide capacitance per unit area (F/cm2)
Mobility of carriers (cm2/ V-s)
Saturation Velocity (cm/s)
Transconductance (mho), (S)
Output Conductance (mho), (S)
Channel Conductance (mho), (S)
vi

Introduction

After the first Transistor was invented by Dr. W. Shockley, he went to Silicon
Valley and founded his own laboratory. In 1956, eight men joined his lab, they are N.
Noyce, R. Moore, J. Blank, E. Kliner, J. Hoerni, J. Last, S. Boberts and V. Grinich. These
men are all under their 30s. These eight people later left the Lab, and started their own
company. The company is called Fairchild. These people are called The Traitorous Eight
by Dr. W. Shockley.
This company Fairchild is the inventor of VLSI. In 1959, J. Kilby from TI invented
the first VLSI circuit, but Fairchild believe it holds the technique of lithography before it.
In 1969 the court made its decision on having them both the inventor of VLSI. While in
1964, co-founder Dr. R. Moore came up with the famous Moores Law, predicting the
Transistors on a chip will double every 18 months, which becomes the first law for
Electrical Engineering Industry.
Just on 11-18-2015, during this course, Fairchild was bought at a price of $2.4
billion by ON Semiconductor. Fairchild is the first company of the lithography technique.
It has affected many companies in Silicon Valley.

Abstract
In EE504 offered by Prof. Kian, Kaviani, in USC, EE department, I had a hand-on
experience to make my own MOSFET on a wafer. I am grateful, excited, and thankful to
present my final report on this format. I have made and tested several n-doped
resistors, MOS Caps, MOSFETs, and diodes. This report is showing all the technique
aspects on these components.

3. Theory
3.1 Resistor
3.1.1 Transmission Line Method (TLM) and Transfer Line Method
The total Resistance (RT) measured on the scope is sum of the Resistance due to
the wire & probe tips (usually small and neglected)+ Resistance due to the
contact metal (Rm) + Resistance to the metal-semiconductor contact (Ohmic
Contact: Rc) and the resistance of the doped layer (Rs).
RT = 2Rm + 2Rc + Rs
Rs = Rsh (L/W)
This disadvantage of transmission line method for finding Rsh is that the cross
sectional area of the carrier flow in the IC resistor is needed and that depends on
the junction depth of the diffused layer at the end of the process, and we usually
do not have this number available. This is why the Transmission Line
Measurement is used more commonly in which we can extract both Rc & Rm
simultaneously without much trouble.

Fig. 3.1.1 Test Structure of TLM

Fig. 3.1.2 Transfer Line Measurement Sample Plot

3.1.2 IC Resistors
Three types of Resistors represented as R400, R800 & R5400.
R = Rsh(L/W)effective
Here for marking the pad corrections in R400, R800 and 5400, we just add 40
micrometers to the nominal lengths to have 440, 840, and 5440 micrometers
accordingly. In the R5400 we need to make the correction for bends. This
Resistor also has 17 corners.

Fig. 3.1.3 three lengths of IC resistors in this lab

3.2 PN Diode
3.2.1 Structure of a PN Diode

Fig. 3.2.1 Cross Section of a PN Diode

3.2.2 Expected Plots

Values of n, I0 and Vbi are experimentally extracted from DC data.

Fig. 3.2.2 Experimental I0 Vbias Curve

Theoretical Graph for PN diode is shown below, on the left is what is

expected in industry, usually it is uniformly straight line, and on the right
is what we will obtain in the EE504 lab, which has three sections, n1, n2
and n3.

Fig. 3.2.3 Experimental Ln (I0) Vbias Curve

3.3 MOS Cap

Metal-Oxide-Semiconductor (MOS) Capacitors

Fig. 3.3.1 Structure of a MOS Capacitor

Below is the band structure of a MOS Capacitor.

Fig. 3.3.2 Band Structure of a MOS Capacitor

Band Structure Existing Four Conditions:

Fig. 3.3.3 (a)Flat Band Condition (b)Accumulation (c)Depletion (d)Inversion &

Threshold

Expected MOS Capacitors C V Characteristics:

Fig. 3.3.4 Experimental C-V characteristics

Fig. 3.3.5 Shifted C-V Curve due to Oxide Charges

3.4 MOSFET

Fig. 3.4.1 MOSFET Structure

Assumptions used for MOSFET Model are:

1. Long channels (L > 5 micrometer)
2. Mobility of electrons is constant in the channel.
3. The shape of the channel as a function of the drain-source bias changes linearly
(Gradual Channel Approximation, GCA)
4. Electric along the channel is the dominant electrical field and the component of electric
perpendicular to the channel inside the semiconductor is negligible. (Fairly good
approximation for long channels)

Fig. 3.4.2 Expected I-V characteristic of MOSFETs

Linear Region: =
[( )
]

Saturation Region:

( )2

3.4.2 Saturation Region

Saturation Regime is the most important part of transistors operating regime where a flat
characteristics (at least theoretically) allows the circuit designers use the transistors over a
wide operating voltages. Therefore, most of our device parameter extraction is done in
the saturation regime.
Square Law Model Saturation Region. The saturation current of a MOSFET is only a
function of varying Vgs and not a function of Vds. And the relationship between Vgs and Ids is
quadratic.
If we take square root of the relationship we can find a linear relationship between
sqrt(Ids) and Vds. And Vth is shown on the left intersection of the x-axis. The slope is used
for calculation of Average Channel Mobility at Saturation.

Fig. 3.4.3 Extraction of Threshold Voltage

Fig. 3.4.4 Extraction of the Average Channel Mobility at Saturation

3.4.3 Saturation Velocity (Vs)

There is also another way of looking at saturation regime, and that is to attribute the
saturation of the drain current to the carriers in the channel have reached their saturation
velocity (Vs).
Modifying the square law model to implement Vs in this equation, we need to replace Vs
with (Vgs Vth) /2L. And rewrite the square law model as:
Ids = Vs Cox W (Vgs Vth)
Now if we plot Ids as a function of Vs we expect an almost linear relationship, which will
enable us to extract Vs from the slope of this graph:

Fig 3.4.5 Extraction of Vs

3.5 Figures of Merit of MOSFETs for DC characterization

3.5.1 Tansconductance: gm
The most important figure of merit of MOSFETs is transconductance (gm) which
represent the conductance (inverse of the resistance) of the channel.
The unit of conductance of [1/ohm] or mho. We are usually interested in the
tansconductance for the saturation regime. We can find values of
transconductance at a fixed large Vgs (i.e Vds > 6V)

Fig. 3.5.1 (a) gm extraction at a fixed Vds.

(b) Finding the max gm and corresponding Vgs

3.5.2 Output Conductance: gd

The second most important figure of merit for DC characterization of a Field
Effect Transistor is output conductance, gd, which is defined as:

gd = ( dIds / dVds ) at Vgs = cte.

gd ~ dIds / dVds
gd ~ (Ids2 Ids1) / (Vds2 Vds1)
with Vgs = cte

Fig.3.5.2 Extraction of Drain to Source Voltage

Fig. 3.5.3 gd vs. Vgs in Saturation

10

3.5.3 Voltage Swing:

Represent the Vgs corresponding to (gm/gd) max 10% (gm/gd) max

Fig. 3.5.4 Extraction of Voltage Swing

3.5.4 Channel Conductance (gc)

It is defeined as gc = (dIds / dVds ) at Vgs = cte
it is:
=

[( ) ]

3.5.5 Mobility of linear regime

The linear regime Vds are very small, so we ignore it. Then plot the gc vs Vgs
graph we obtain the following. We could get the slope to obtain the mobility at
linear regime.

Fig. 3.5.5 Extraction of mobility of linear regime

11

4. Testing Results
4.1 Resistor
4.1.1 TLM Transmission Line Model
Transmission Line Model (TLM) theory was used for accessing the quality of ohmic
contact. This technique was proposed by Reeves and Harrison. A detailed analysis is
available in their published work.
A schematic diagram of a semiconductor material with ohmic contact pads prepared for
TLM analysis is shown in Figure 1.1. It can be seen that the sample if first mesa etched
usually to a semi-insulating substrate or to a depth where there is a natural depletion
layer such as between n+ and p+ material. This is done in order to isolate columns of the
conductive epitaxial layer there by restricting current flow within the mesa height.
Metal pads, of finite width, and length, are then deposited on the mesa at a linearly
increasing pad spacing, d, such that d1 < d2 < d3.

Figure 4.1 TLM Model used in this analysis

Slope = 0.2478
Y-axis interception = 25.166

140
380, 119.76

120

TLM Resistance ()

A constant voltage is applied between two

adjacent pads through two probes; then
measure the current using a current meter
enabling the total resistance between the
pads to be obtained. The process is
repeated and the total resistance is plotted
on a function of pad spacing; our result is
shown in Figure 3.2.

100

y = 0.2478x + 25.166

80

300, 99.305

200, 74.102

60

100,
49.727
60, 40.617

40

20
0
0

100

200

300

400

Pad Spacing (um)

Figure 4.2 Lab results for TLM Resistor
Ladder and spacing

12

4.1.2 Rsh and Rc

RT = 2Rm + 2Rc + Rs, ignoring Rm because it is very small, we have:

RT = 2Rc + Rs

(3.1)

Rs= Rsh L / W

(3.2)

Using d1 & d2 and their corresponding measured total resistance of RT1 & RT2 we
obtain:

RT1 = 2Rc + Rsh L1 / W

(3.3)

RT2 = 2Rc + Rsh L2 / W

(3.4)

Solve the above system for Rc and Rsh, we obtain:

Rc = (RT1 L2 RT2 L1) / 2(L2 L1)

(3.5)

Rsh = W (RT1 RT2) / (L1 L2)

(3.6)

Slope = (RT1-RT2) / (L1-L2)

(3.7)

Rsh = W Slope

(3.8)

4.1.3 Calculated data for TLM is shown in table 4.2, IC resistor in table 4.3.
Length
Resistance

60
40.617

100
49.727

200
74.102

300
99.305

380
119.76

um

Table 4.1 Obtained data from TLM Resistor

W
Rsh
Rc

20 um
0.2478 X 20 = 4.956 /
25.166 / 2 = 12.583

Typical 2-10 /
Typical 5-20

Table 4.2 Calculated Rsh and Rc from graph

Length um
400
800
5400 (corner)

Resistance
281.968
483.91
2560.492

Rsh /
6.408364
5.760833
4.722064

Table 4.3 Obtained data of resistors with other Lengths

Compare Rsh (shaded cells) with other resistors in table 3.3, Rsh all falls in the typical
range 2-10 /, which validates our measurements. 5400 has 17 corners to be fixed,
therefore extra resistance is reduced (0.44 per corner). 40 m has been added to total
length for each case too.

13

4.2 Diode

7.00E-03

1.40E-02

6.00E-03

1.20E-02

5.00E-03

1.00E-02

4.00E-03

8.00E-03

Current / A

Current / A

Current-voltage (I-V) measurements (Fig. 4.3) refer to d.c. characterizations of devices for the
purposes of performance analysis and parameter extraction. In practice most of the diode
parameters are extracted by first plotting its I-V characteristics on an ln (I) vs. V graph as shown
in Fig. 4.4.

3.00E-03
2.00E-03

4.00E-03
2.00E-03

1.00E-03

0.00E+00

0.00E+00
-1.00E-03

6.00E-03

0.5

1.5

-2.00E-03

Bias Voltage / V

0.5

1.5

Bias Voltage / V

Figure 4.3 P-N Diode I-V Characteristic for diode1 and diode2

The semi-logarithmic I-V curve can be divided into three distinct regions: region 1 is the nonlinear region due to non-exponential behaviour of diodes at low voltages; region 2 is the linear
region and region 3 where the current is limited by the series resistance.
3

-1 0
-3

Region 2
0.5

Region 3
1

1.5

-5
-7
-9
-11

-2 0

0.5

1.5

Region 3

-4 Region 1
-6
-8
-10
-12

-13

-14

-15

-16

-17

Region 2

Current / log(A)

Current / log(A)

1Region 1

Biasing Voltage / V

-18

Biasing Voltage / V

Figure 4.4 Plot of P-N diode Ln(I)-V Characteristic

14

4.2.2 Data extraction

Built-in Potential: Vbi = (kT/q) ln(Nn.Pp/ni2)

(4.1)

I-V Characteristic: I = I0 [exp (qV/n kT) 1]

(4.2)

For practice, rewrite the forward bias regime as: I = I0 exp(qV/nkT)

(4.3)

Apply log:

(4.4)

Ln (I) = Ln(I0) + (q/nkT) V

This shows in the graph, three line slopes are used for calculate the Ideality factory of Diode.
The interception of the linear line and y axis is the natural log of reverse saturation current I0

4.4.3 Data Obtained from Ln(I)-V and I-V curve:

Vbi [V]
n1 = q/kT.Slope1 =
n2 = q/kT.Slope2 =
n3 = q/kT.Slope3 =
I0 = exp(-12.528) =

Vbi [V]
607 E-3
n1 = q/kT.Slope1 =
3.0184
n2 = q/kT.Slope2 =
7.3722
n3 = q/kT.Slope3 =
20.1887
I0 = exp(-12.851) =
2.6235E-06
Table 4.4 Measured Data for Diode 1

616 E-3
7.0685
2.4845
16.2648
3.6237E-06

Table 4.5 Measured Data for Diode 2

Linear Fit Plots and equations:

5

-2 0

0.5

1
1.5
y = 1.9813x - 8.0097

0.5

1.5

y = 2.4593x - 7.8086

-7

-10

y = 5.4258x - 10.956
-12

0
-5

y = 16.1x - 17.632
-15

y = 13.252x - 12.851

y = 5.6589x - 12.528

-17

-20

7.00E-03

1.50E-02

6.00E-03

y = 0.0149x - 0.0093

y = 0.0066x - 0.0041

5.00E-03

1.00E-02

4.00E-03
3.00E-03

5.00E-03

2.00E-03
1.00E-03

0.00E+00
0

0.00E+00
-1.00E-03 0

0.5

1.5

0.5

1.5

-5.00E-03

Figure 4.5 Linear Fit Plots and Equations, left diode1, right diode2

15

4.3. MOS Cap

4.3.1. CV Relationship
CV Measurement of Capacitor 1
2.00E-10
1.80E-10
1.60E-10
1.40E-10

VFB

1.20E-10
1.00E-10
8.00E-11
6.00E-11
4.00E-11
2.00E-11

0.00E+00
-6.00E+00 -5.00E+00 -4.00E+00 -3.00E+00 -2.00E+00 -1.00E+00 0.00E+00

1.00E+00

2.00E+00

3.00E+00

CV Measurement of Capacitor 2
1.60E-10
1.40E-10
1.20E-10

VFB

1.00E-10
8.00E-11
6.00E-11
4.00E-11

2.00E-11
0.00E+00
-6.00E+00 -5.00E+00 -4.00E+00 -3.00E+00 -2.00E+00 -1.00E+00 0.00E+00

1.00E+00

2.00E+00

3.00E+00

Figure 4.6 CV measurements for Caps

4.3.2 Extraction of Oxide Thickness

2 =

16

4.3.3 Extraction of Nsub

2
4
=
0 2

4.3.4 Extraction of Oxide Charges

VFB = MS + Qss / CSiO2
Where:
MS = M - S
M : Metal work function, for Al gate,
Al = 4.10 V
S : Semiconductor work function
S = Xsi + Eg/2+ f
Where:
Xsi : Electron Affinity of Silicon = 4.05 V
Eg: Bang gap of Si at T = 300 K = 1.12 V
4.3.5 Flat Band Capacitance
=

Cap1:

(11.7)(8.851014 )(0.0259) 1/2

(1.61019 )(3.9751015 )

0 1/2
]
2

= 6.4936 * 10-6 cm

1
3068108
6.4936106
+
14
(3.9)(8.8510
) (11.7)(8.851014 )(1.60103 )

= [
CFB =

= [

+ 0

= [
CFB =

Cap2:

(11.7)(8.851014 )(0.0259) 1/2

(1.61019 )(2.2901015 )

= 2.54 *10-10 F

= 8.5553 * 10-6 cm

1
307108
8.5553106
+
14
(3.9)(8.8510
) (11.7)(8.851014 )(1.256103 )

= 1.518 * 10-10 F

17

4.3.5 So all calculated Data for cap 1:

Csio2 = epiox epi0 A / tox
Cmax
CSio2
Cmin
Csi

1.80E-10
1.80E-10
3.01E-11
3.01E-11

Cap 1

F
F
F
F

tox
epi0
epiox
A[suqare]

Nsub = 4f Csf^2 / q episi epi0 A^2

f = (KT/q) ln(ni/Nd)
Csf
episi
q
KT/q
ni
f

3.61E-11
1.17E+01
1.60E-19
2.59E-02
1.50E+10
3.32E-01

3.07E-06
8.85E-14
3.9
1.60E-03

Nsub = Nd

F
C
V
cm-3
V

VFB
Eg
Xsi
S
MS
Qss
Nsub

-1
1.12
4.05
4.942
-0.842
-2.844E-11
3.975E15

cm
F/cm

30.7

nm

cm2
VFB = MS + Qss/Csio2
S = Xsi + Eg/2 + f
V
V
Nf = Qss/(q*A)
V
cm-2
V
Nf
1.11E11
V
Nf(typical) (1-20)E11
Q
CFB from graph
cm-3 CFB
9.37E-11F

Table 4.6 Data of Cap 1

Detailed Calculations for cap 2:

Csio2 = epiox epi0 A / tox
Cmax
CSio2
Cmin
Csi

1.45E-10
1.45E-10
2.51E-11
2.51E-11

Cap 2

F
F
F
F

tox
epi0
epiox
A[circle]

Nsub = 4f Csf^2 / q episi epi0 A^2

f = (KT/q) ln(ni/Nd)
Csf
episi
q
KT/q
ni
f

3.03E-11
1.17E+01
1.60E-19
2.59E-02
1.50E+10
3.10E-01

2.41E-06
8.85E-14
3.9
1.256E-03

Nsub = Nd

F
C
V
cm-3
V

VFB
Eg
Xsi
S
MS
Qss
Nsub

-1.4
1.12
4.05
4.9191
-0.8191
-1.046E-11
2.290E15

cm
F/cm

24.1

nm

cm2
VFB = MS + Qss/Csio2
S = Xsi + Eg/2 + f
V
V
Nf = Qss/(q*A)
V
cm-2
V
Nf
0.521E11
V
Nf(typical) (1-20)E11
Q
CFB from graph
cm-3
CFB
8.74E-11F

Table 4.7 Data of Cap 2

18

To calculate f and Nsub, solve for equation:

2
= 4(0.0259) ln (
)

0 2
=

2
2

To put values in, we get:

(3.61 1011 )2

= 4(0.0259) ln (
)

1.5 1010 (1.6 1019 11.7 8.85 1014 (1.6 103 )2 )

= 3.1834 1014 ln(

)
1.5 1010

So start with a guess Nsub =5 *1015, then put the results back into the equation, get a
new value of 4.048 * 1015, and put it back to the equation, get value of 3.9810 * 10 15,
and after repeating this process in five times, get for diode 1:
= 3.975 1015 3

= 0.3234

For diode 2, have got

= 1.9186 1014 ln(
= 2.290 1015 3

)
1.5 1010
= 0.3091

4.3.6 Overall Important Extracted Data for Cap 1 & 2

Csf
Csi
Csio2
tox
Nsub
f

Cap 1
3.61 * 10
F
-11
3.01 * 10
F
1.80 * 10-10 F
3.07 * 10-6 cm
3.975 * 1015 cm-3
0.3234
V

CFB
Qss
Nf
Ld

9.37 * 10-11 F
-2.84 * 10-11 C
1.11 * 1011 cm-2
6.4936 * 10-6 cm

-11

-11

Cap 2
F
F
F
cm
cm-3
V

36.1 pF
30.1 pF
180 pF
307

3.04 * 10
2.51 * 10-11
1.45 * 10-10
2.41 * 10-6
2.29 * 1015
0.3091

93.7 pF

8.74 * 10-11 F
-1.05 * 10-11 C
0.52 * 1011 cm-2
8.5553 * 10-6 cm

30.4 pF
25.1 pF
145 pF
241

87.4 pF

Table 4.8 Comparison of Cap1 & Cap2

19

4.4 MOSFET
4.4.1 Saturation Region I-V curve,
Linear Region I-V will show in 4.4.4.4 Extraction of gc

Fig. 4.4.1 Saturation Region I-V curve

20

4.4.2 Extract Vth and

First Obtain the vs Vgs Curve, while Vds > Vgs Vth, Vds = 14 V
Id
0.12
0.1
y = 0.0075x + 0.0117

0.08
0.06
0.04
0.02
0
0

10

12

14

Fig. 4.4.2 Vds = 14, sqrt(Ids)[A0.5] vs Vgs[V], w = 40 um

( )2

( )

Vth is the x-axis intersection point of the plot.

Vth = 0.0117 / (-0.0075) = -1.56 V
Slope =
=

(3.9)(8.851014 )
(

(3.07+2.41)
106 )
2

= 1.2597 * 10-7 F/cm2

= [(0.0075)2 * 2 * 16 * 10-6] / (1.2597 * 10-7) / (40* 10-6) = 357.22

21

sqrt(ids)
1.60E-01
1.40E-01

y = 0.0101x + 0.0156

1.20E-01
1.00E-01
8.00E-02
6.00E-02
4.00E-02
2.00E-02
0.00E+00
0

10

12

14

Fig. 4.4.3 Vds = 14, sqrt(Ids) vs Vgs, w = 80 um

Vth = 0.0156 / (-0.0101) = -1.545 V

= [(0.0101)2 * 2 * 16 * 10-6] / (1.2597 * 10-7) / (80* 10-6) = 323.92

W
Vth

MOSFET 1
W = 40 um
-1.560 V

MOSFET 2
W = 80 um
-1.545 V

357.22 cm2 / V-s

323.92 cm2 / V-s

Table 4.4.1 Vth and mobility of Mosfet

22

4.4.3 Extraction of Vs
2.00E-02
1.80E-02

y = 0.0019x - 0.0057

1.60E-02
1.40E-02
1.20E-02
y = 0.0011x - 0.0033

1.00E-02
8.00E-03
6.00E-03
4.00E-03
2.00E-03
0.00E+00
-2.00E-03

10

12

14

Fig. 4.4.5 Id vs Vgs for two Mosfet, Blue- 80um, Orange 40um

Vs = (Vgs - Vth) / (2L)

Id = Vs Cox W (Vgs - Vth)

Slope = Vs Cox W

Vs:

Vs40um = 0.0011/(1.2597 * 10-7 * 40 *10-4) = 2.18E6 cm/sec

Vs80um = 0.0019/(1.2597 * 10-7 * 80 *10-4) = 1.89E6 cm/sec

Vave = (Vs40um + Vs80um) = 2.034 * 106 cm/sec

23

4.4.4 Figure of Merit of Mosfets

4.4.4.1 Transconductance : gm
Vgs [V]

Ids [A]

gm = (Ids2- Ids1) / (Vgs2 Vgs1) []

0
6.42E-05
3.80E-04
1
4.44E-04
7.09E-04
2
1.15E-03
9.63E-04
3
2.12E-03
1.17E-03
4
3.29E-03
1.35E-03
5
4.64E-03
1.51E-03
6
6.14E-03
1.63E-03
7
7.78E-03
1.74E-03
8
9.51E-03
1.80E-03
9
1.13E-02
1.79E-03
10
1.31E-02
1.69E-03
11
1.48E-02
1.57E-03
12
1.63E-02
#######
Table 4.4.2 gm calculation, w = 80 um, Vds = 8.5 V

gm/w[mS/mm] vs Vgs [V]

25.00

20.00

15.00

10.00

5.00

0.00
0

10

12

Fig. 4.4.6 gm/w (mS/mm) vs Vgs (V), w = 80um

(gm/W)max = 22.51 mS/mm

(gm)max = 1.80 * 10 -3 mho

at Vgs = 9 V, Vds = 8.5 V

24

Vgs [V]

Id [A]
0
1
2
3
4
5
6
7
8
9
10
11
12

gm = (Ids2- Ids1) / (Vgs2 Vgs1) []

4.8E-05
0.000257
0.000647
0.001178
0.001825
0.002574
0.003409
0.004318
0.005288
0.006297
0.007305
0.008264
0.009162
Table 4.4.3 gm calculation, w = 40 um

0.00021
0.00039
0.00053
0.00065
0.00075
0.00084
0.00091
0.00097
0.00101
0.00101
0.00096
0.0009

gm/w[mS/mm] vs Vgs[V]
30

25

20

15

10

0
0

10

12

Fig. 4.4.7 gm/w (mS/mm) vs Vgs (V), w = 40um

(gm/W)max = 25.23 mS/mm

(gm)max = 1.00 * 10 -3 mho at Vgs = 8 V, Vds = 8.5 V

25

4.4.4.2 Output Conductance: gd

= (/) =
= (2 1)/(2 1) =

Vgs [V]
0
1
2
3
4
5
6
7
8
9
10
11
12

Ids1 [A]
0.000049114
0.0002612
0.00065416
0.00119
0.0018415
0.0025935
0.0034316
0.0043466
0.0053236
0.0063486
0.0074101
0.0084863
0.009541

Ids2 [A]
Vds2 [V] Vds1 [A]
0.00005218 14.5
10
0.0002842
14.5
10
0.00071517 14.5
10
0.0012925
14.5
10
0.001984
14.5
10
0.0027645
14.5
10
0.0036135
14.5
10
0.0045161
14.5
10
0.0054691
14.5
10
0.0064635
14.5
10
0.0075026
14.5
10
0.0085812
14.5
10
0.0096874
14.5
10
Table 4.4.4 gd calculation, w = 40 um

gd []
0.000001022
7.66667E-06
2.03367E-05
3.41667E-05
0.0000475
5.7E-05
6.06333E-05
5.65E-05
4.85E-05
3.83E-05
3.08333E-05
3.16333E-05
4.88E-05

gd/w [S/m]
2.555E-08
1.91667E-07
5.08417E-07
8.54167E-07
1.1875E-06
0.000001425
1.51583E-06
1.4125E-06
1.2125E-06
9.575E-07
7.70833E-07
7.90833E-07
1.22E-06

gd/w for w = 40
1.6

gd/w[mS/mm]

1.4
1.2
1
0.8
0.6
0.4
0.2
0
0

10

12

14

Vgs / V

Fig. 4.4.8 gd/w(mS/mm) vs Vgs (V), w = 40um

26

w = 80 um results:
Vgs [V]
0
1
2
3
4
5
6
7
8
9
10
11
12

Ids1 [A]
6.52E-05
4.51E-04
1.17E-03
2.14E-03
3.32E-03
4.67E-03
6.18E-03
7.82E-03
9.57E-03
1.14E-02
1.33E-02
1.52E-02
1.70E-02

Ids2 [A]
Vds2 [V] Vds1 [V] gd []
6.93E-05 14.5
10
9.16444E-07
4.99E-04 14.5
10
1.06889E-05
1.30E-03 14.5
10
2.87778E-05
2.36E-03 14.5
10
4.96667E-05
3.63E-03 14.5
10
6.88889E-05
5.04E-03 14.5
10
8.15778E-05
6.56E-03 14.5
10
8.46667E-05
8.16E-03 14.5
10
7.62889E-05
9.84E-03 14.5
10
6.05111E-05
1.16E-02 14.5
10
4.22222E-05
1.34E-02 14.5
10
2.77778E-05
1.53E-02 14.5
10
2.55556E-05
1.72E-02 14.5
10
4.66667E-05
Table 4.4.5 gd calculation, w = 80 um

gd/w [S/m]
1.14556E-08
1.33611E-07
3.59722E-07
6.20833E-07
8.61111E-07
1.01972E-06
1.05833E-06
9.53611E-07
7.56389E-07
5.27778E-07
3.47222E-07
3.19444E-07
5.83333E-07

gd/w for w = 80 u
1.2

gd/w [mS/mm]

1
0.8
0.6
0.4
0.2
0
0

10

12

14

Vgs /V

Fig. 4.4.9 gd/w(mS/mm) vs Vgs (V), w = 80um

27

4.4.4.3 Voltage Swing

gm []

Vgs [V]

gd []

0
1
2
3
4
5
6
7
8
9
10
11
12

gm/gd

0.00E+00
3.80E-04
7.09E-04
9.63E-04
1.17E-03
1.35E-03
1.51E-03
1.63E-03
1.74E-03
1.80E-03
1.79E-03
1.69E-03
1.57E-03

9.164E-07
1.069E-05
2.878E-05
4.967E-05
6.889E-05
8.158E-05
8.467E-05
7.629E-05
6.051E-05
4.222E-05
2.778E-05
2.556E-05
4.667E-05

0.00E+00
3.55E+01
2.46E+01
1.94E+01
1.70E+01
1.66E+01
1.78E+01
2.14E+01
2.87E+01
4.26E+01
6.43E+01
6.59E+01
3.35E+01

Table 4.4.6 gm/gd for 40 um

Vgs [V]

gm []

gd []

0
1
2
3
4
5
6
7
8
9
10
11
12

gm/gd

0
0.00021
0.00039
0.00053
0.00065
0.00075
0.00084
0.00091
0.00097
0.00101
0.00101
0.00096
0.0009

1.02E-06
7.67E-06
2.03E-05
3.42E-05
4.75E-05
5.7E-05
6.06E-05
5.65E-05
4.85E-05
3.83E-05
3.08E-05
3.16E-05
4.88E-05

0
27.308
19.1447
15.5491
13.6211
13.1404
13.7713
16.0885
19.9918
26.3446
32.7081
30.3161
18.4078

Table 4.4.6 gm/gd for 80 um

80
70
60
50
40
30
20
10
0
0

10

12

14

Fig. 4.4.10 gm/gd vs Vgs[V], Blue is 40 um, Orange is 80 um, Voltage Swing

28

So it can be seen that for 40 um, largest gm/gd = 33.5, 90% will be 30.15, that happens at
Vgs = 9.5-11.0 V, the voltage swing is 1.5 V.
For 80 um, largest gm/gd = 68.5, 90% will be 62.1, that happens at Vgs = 9.85 11.2 V, the
voltage swing is 1.35 V.

4.4.4.4 Channel Conductance (Linear Region)

FET I-V Characteristics w=40 um
2.00E-04
1.80E-04
1.60E-04
1.40E-04
1.20E-04
1.00E-04
8.00E-05
6.00E-05
4.00E-05
2.00E-05
0.00E+00
0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0.08

0.09

0.1

FET I-V Characteristics w=80 um

3.50E-04
3.00E-04
2.50E-04
2.00E-04
1.50E-04

1.00E-04
5.00E-05
0.00E+00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

Fig. 4.4.11 Linear Region of Mosfet

29

Extraction of gc and Vth,

Vgs [V]
0
1
2
3
4
5
6
7
8
9
10
11
12

Ids2 [A]
1.33E-05
3.30E-05
4.79E-05
6.05E-05
7.28E-05
8.41E-05
9.41E-05
1.05E-04
1.14E-04
1.22E-04
1.30E-04
1.38E-04
1.46E-04

Ids1 [A]
Vds1 [V]
Vds2 [V]
9.48E-06
0.04
0.08
1.87E-05
0.04
0.08
2.59E-05
0.04
0.08
3.26E-05
0.04
0.08
3.90E-05
0.04
0.08
4.41E-05
0.04
0.08
4.92E-05
0.04
0.08
5.43E-05
0.04
0.08
5.86E-05
0.04
0.08
6.38E-05
0.04
0.08
6.73E-05
0.04
0.08
7.06E-05
0.04
0.08
7.48E-05
0.04
0.08
Table 4.4.7 extracted gc values

gc []
0.000095105
0.000356625
0.0005486
0.000695975
0.00084565
0.000998275
0.001121875
0.001261025
0.001373275
0.0014653
0.001576125
0.001687875
0.001776525

0.002
y = 0.0001x + 0.0003
0.0015

gc [S]

0.001

0.0005

-4

-2
-0.0005

10

12

14

Vgs [V]

Fig 4.4.12 gc vs Vgs for 40um

( ) , so Vth is the x-axis intersection point

Vth = 0.00025 / (-0.000125) = -2 V

Slope =

= [0.000125* 16 * 10-6] / (1.2597 * 10-7) / (40* 10-6) = 396.92

30

Vgs [V]
0
1
2
3
4
5
6
7
8
9
10
11
12

Ids2 [A]
1.76E-05
5.21E-05
7.98E-05
1.03E-04
1.24E-04
1.44E-04
1.61E-04
1.79E-04
1.95E-04
2.10E-04
2.25E-04
2.37E-04
2.48E-04

Ids1 [A]
Vds1 [V]
Vds2 [V]
1.02E-05
0.04
0.08
2.77E-05
0.04
0.08
4.18E-05
0.04
0.08
5.29E-05
0.04
0.08
6.32E-05
0.04
0.08
7.35E-05
0.04
0.08
8.19E-05
0.04
0.08
9.06E-05
0.04
0.08
9.86E-05
0.04
0.08
1.06E-04
0.04
0.08
1.13E-04
0.04
0.08
1.19E-04
0.04
0.08
1.25E-04
0.04
0.08
Table 4.4.8 extracted gc values

gc []
0.000185725
0.00060915
0.00095145
0.001257775
0.001522725
0.00175325
0.0019841
0.002211175
0.002405925
0.00259625
0.00279375
0.00295525
0.00307375

0.0035
y = 0.0002x + 0.0005
R = 0.9803

0.003
0.0025

gc [S]

0.002
0.0015
0.001
0.0005
0
-2
0
-0.0005

-4

10

12

14

Vgs [V]

Fig 4.4.13 gc vs Vgs for 80um

Vth = 0.0005 / (-0.00025) = -2 V

Slope =

= [0.00025* 16 * 10-6] / (1.2597 * 10-7) / (80* 10-6) = 396.92

31

Conclusion
In this lab report, different part of the wafer testing results has been presented.

5.1. Resistor
All values of Rsh are falling in the right range of 2-10 Ohm/square. By comparing
the different IC resistors and the resistor ladder, we can see a very good agreement
with each other. Also Rc is very close to theory in the resistor ladder, which is
around 10 Ohm. The values are very reasonable and making sense in this part.

5.2 PN Diode
The Diode usually should have three regions. In the first diode, the three regions
are very close to the one line-approximation, so it is very good and close to the
industry. The second diode has a larger range of ideality values, but are still
reasonable, which are greater than 1, not more than 20. Two Vbi values are very
close to each other.

5.3 MOS Cap

This part, the agreement between the two testing results are very high and
persuasive. However, the graph read VFB values are not close to calculated data, I
think it is because of testing process. The thicknesses of gate (tox) are close to each
other, 307 and 241

5.4 MOSFET
Very good result, especially on the linear part, two mobility, two Vth are
extremely close to each other, which proves the theory. The gm/gd shape is also
good as a bell shape, which gives a good voltage swing.

32

6. Reference
[1] Dr. Kian Kaviani, University of Southern California, Courses Slides, Fall 2015
[2] Dr. Kian Kaviani, University of Sourthen California, Lab Manual, Fall 2015
[3] Dr. Dhabbir A. Bashar, University of London Regulations, Study of Indium Tin
Oxide (ITO) for Novel Optoelectronic Devices, PH.D. Thesis, October 1997

33

7. Appendix
7.1 Data
Data of PN diodes
-1.86E-06 -6.37E-07
7.24E-06 1.01E-05
2.91E-05 3.42E-05
7.03E-05 7.96E-05
1.32E-04 1.44E-04
2.07E-04 2.21E-04
3.04E-04 3.27E-04
5.13E-04 5.68E-04
9.06E-04 9.82E-04
1.39E-03 1.47E-03
1.91E-03 2.00E-03
2.46E-03 2.56E-03
3.03E-03 3.12E-03
3.61E-03 3.71E-03
4.20E-03 4.30E-03
4.80E-03 4.89E-03
5.40E-03 5.50E-03

-3.22E-07
1.26E-05
4.05E-05
8.90E-05
1.56E-04
2.35E-04
3.53E-04
6.28E-04
1.06E-03
1.56E-03
2.09E-03
2.65E-03
3.22E-03
3.80E-03
4.39E-03
5.00E-03
5.61E-03

2.57E-07
1.63E-05
4.70E-05
9.91E-05
1.68E-04
2.50E-04
3.84E-04
6.93E-04
1.14E-03
1.65E-03
2.19E-03
2.74E-03
3.32E-03
3.90E-03
4.49E-03
5.10E-03
5.71E-03

3.14E-06
1.99E-05
5.43E-05
1.10E-04
1.81E-04
2.67E-04
4.21E-04
7.61E-04
1.22E-03
1.74E-03
2.28E-03
2.84E-03
3.41E-03
4.00E-03
4.59E-03
5.20E-03
5.81E-03

4.98E-06
2.43E-05
6.21E-05
1.21E-04
1.94E-04
2.84E-04
4.64E-04
8.32E-04
1.31E-03
1.82E-03
2.37E-03
2.93E-03
3.51E-03
4.10E-03
4.69E-03
5.30E-03

-1.16E-05 -1.05E-05
-4.12E-06 -2.62E-06
4.94E-06 6.43E-06
1.56E-05 1.78E-05
2.84E-05 3.03E-05
4.48E-05 4.94E-05
1.19E-04 1.60E-04
6.51E-04 7.99E-04
1.66E-03 1.85E-03
2.84E-03 3.05E-03
4.09E-03 4.30E-03
5.38E-03 5.60E-03
6.70E-03 6.92E-03
8.03E-03 8.26E-03
9.38E-03 9.61E-03
1.08E-02 1.10E-02
1.22E-02 1.24E-02

-9.16E-06
-1.26E-06
8.56E-06
1.94E-05
3.30E-05
5.49E-05
2.19E-04
9.56E-04
2.04E-03
3.25E-03
4.51E-03
5.82E-03
7.14E-03
8.49E-03
9.84E-03
1.12E-02
1.26E-02

-8.01E-06
1.90E-07
1.00E-05
2.17E-05
3.55E-05
6.27E-05
2.97E-04
1.12E-03
2.24E-03
3.46E-03
4.73E-03
6.04E-03
7.36E-03
8.71E-03
1.01E-02
1.15E-02
1.29E-02

-6.91E-06
5.76E-07
1.19E-05
2.37E-05
3.84E-05
7.43E-05
3.98E-04
1.30E-03
2.44E-03
3.67E-03
4.95E-03
6.26E-03
7.59E-03
8.93E-03
1.03E-02
1.17E-02
1.31E-02

-5.16E-06
3.36E-06
1.37E-05
2.59E-05
4.16E-05
9.11E-05
5.15E-04
1.48E-03
2.64E-03
3.88E-03
5.16E-03
6.48E-03
7.81E-03
9.16E-03
1.05E-02
1.19E-02
34

Data of Capacitors
-5.00E+00
-4.50E+00
-4.00E+00
-3.50E+00
-3.00E+00
-2.50E+00
-2.00E+00
-1.00E+00
-5.00E-01
0.00E+00
5.00E-01
1.00E+00
-1.50E+00
1.50E+00
2.00E+00

1.81E-10
1.80E-10
1.80E-10
1.78E-10
1.77E-10
1.75E-10
1.55E-10
9.37E-11
5.60E-11
4.12E-11
3.06E-11
2.93E-11
1.34E-10
3.06E-11
3.01E-11

8.16E-03
1.19E-02
7.93E-03
9.81E-03
6.81E-03
1.26E-02
-1.95E-02
1.22E-02
3.66E-02
8.43E-02
5.57E-02
1.11E-01
1.57E-03
1.74E-01
2.87E-01

-5.00E+00
-4.50E+00
-4.00E+00
-3.50E+00
-3.00E+00
-2.50E+00
-2.00E+00
-1.50E+00
-1.00E+00
-5.00E-01
0.00E+00
5.00E-01
1.00E+00
1.50E+00
2.00E+00

1.45E-10
1.45E-10
1.44E-10
1.43E-10
1.41E-10
1.38E-10
1.27E-10
9.35E-11
7.00E-11
4.97E-11
3.02E-11
2.54E-11
2.49E-11
2.49E-11
2.51E-11

1.34E-02
1.33E-02
1.70E-02
1.51E-02
1.82E-02
2.37E-02
8.72E-03
3.39E-02
5.66E-02
-6.40E-02
6.42E-02
1.25E-02
2.40E-02
4.24E-02
8.60E-02

35

Data of Mosfet w = 40u Linear

4.18E-06
7.89E-06
1.13E-05
1.45E-05

4.78E-06
8.16E-06
1.21E-05
1.44E-05

5.13E-06
9.48E-06
1.19E-05
1.54E-05

6.48E-06
9.52E-06
1.30E-05

6.56E-06
1.03E-05
1.33E-05

7.34E-06
1.07E-05
1.39E-05

3.61E-06
1.55E-05
2.53E-05
3.62E-05

6.07E-06
1.66E-05
2.75E-05
3.77E-05

7.66E-06
1.87E-05
2.91E-05
3.95E-05

9.60E-06
2.04E-05
3.09E-05

1.14E-05
2.21E-05
3.30E-05

1.31E-05
2.43E-05
3.39E-05

3.92E-06
2.07E-05
3.71E-05
5.31E-05

6.77E-06
2.35E-05
3.96E-05
5.63E-05

9.75E-06
2.59E-05
4.30E-05
5.85E-05

1.21E-05
2.94E-05
4.51E-05

1.56E-05
3.15E-05
4.79E-05

1.78E-05
3.44E-05
5.06E-05

4.46E-06
2.51E-05
4.70E-05
6.79E-05

7.34E-06
2.94E-05
5.03E-05
7.15E-05

1.14E-05
3.26E-05
5.39E-05
7.51E-05

1.47E-05
3.62E-05
5.76E-05

1.84E-05
3.99E-05
6.05E-05

2.20E-05
4.28E-05
6.48E-05

3.93E-06
3.00E-05
5.57E-05
8.18E-05

8.41E-06
3.42E-05
6.05E-05
8.53E-05

1.25E-05
3.90E-05
6.41E-05
8.99E-05

1.74E-05
4.26E-05
6.86E-05

2.11E-05
4.72E-05
7.28E-05

2.57E-05
5.15E-05
7.69E-05

3.60E-06
3.44E-05
6.40E-05
9.38E-05

8.97E-06
3.91E-05
6.90E-05
9.90E-05

1.40E-05
4.41E-05
7.41E-05
1.03E-04

1.91E-05
4.92E-05
7.85E-05

2.41E-05
5.36E-05
8.41E-05

2.86E-05
5.93E-05
8.88E-05

4.08E-06
3.78E-05
7.23E-05
1.06E-04

9.02E-06
4.41E-05
7.74E-05
1.11E-04

1.58E-05
4.92E-05
8.32E-05
1.17E-04

2.07E-05
5.50E-05
8.87E-05

2.67E-05
6.06E-05
9.41E-05

3.23E-05
6.61E-05
1.01E-04

3.79E-06
4.21E-05
7.90E-05
1.16E-04

1.06E-05
4.77E-05
8.56E-05
1.23E-04

1.61E-05
5.43E-05
9.18E-05
1.29E-04

2.28E-05
6.05E-05
9.78E-05

2.91E-05
6.67E-05
1.05E-04

3.52E-05
7.35E-05
1.11E-04

3.89E-06 1.02E-05
4.51E-05 5.24E-05

1.80E-05
5.86E-05

2.41E-05
6.57E-05

3.14E-05
7.26E-05

3.82E-05
7.93E-05

36

8.67E-05 9.29E-05
1.28E-04 1.34E-04

1.00E-04
1.41E-04

1.07E-04

1.14E-04

1.20E-04

3.75E-06
4.84E-05
9.27E-05
1.37E-04

1.12E-05
5.57E-05
1.01E-04
1.45E-04

1.86E-05
6.38E-05
1.08E-04
1.52E-04

2.66E-05
7.04E-05
1.15E-04

3.32E-05
7.81E-05
1.22E-04

4.10E-05
8.55E-05
1.30E-04

3.67E-06
5.17E-05
9.90E-05
1.46E-04

1.19E-05
5.95E-05
1.07E-04
1.54E-04

1.96E-05
6.73E-05
1.15E-04
1.62E-04

2.76E-05
7.55E-05
1.23E-04

3.57E-05
8.26E-05
1.30E-04

4.30E-05
9.12E-05
1.39E-04

3.87E-06
5.43E-05
1.05E-04
1.55E-04

1.22E-05
6.29E-05
1.13E-04
1.63E-04

2.08E-05
7.06E-05
1.21E-04
1.72E-04

2.86E-05
7.96E-05
1.30E-04

3.76E-05
8.79E-05
1.38E-04

4.58E-05
9.63E-05
1.47E-04

3.72E-06
5.69E-05
1.10E-04
1.63E-04

1.25E-05
6.58E-05
1.19E-04
1.72E-04

2.15E-05
7.48E-05
1.28E-04
1.80E-04

3.05E-05
8.31E-05
1.36E-04

3.88E-05
9.25E-05
1.46E-04

4.84E-05
1.01E-04
1.54E-04

Data of Mosfet w = 80u Linear

2.25E-06
8.48E-06
1.42E-05
1.89E-05

3.33E-06
9.90E-06
1.47E-05
2.04E-05

4.84E-06
1.02E-05
1.63E-05
2.06E-05

5.14E-06
1.18E-05
1.66E-05

6.56E-06
1.22E-05
1.76E-05

7.47E-06
1.33E-05
1.84E-05

2.66E-06
2.09E-05
4.03E-05
5.85E-05

5.34E-06
2.47E-05
4.33E-05
6.15E-05

8.73E-06
2.77E-05
4.64E-05
6.49E-05

1.18E-05
3.09E-05
4.98E-05

1.51E-05
3.43E-05
5.21E-05

1.85E-05
3.66E-05
5.57E-05

2.04E-06
3.16E-05
6.05E-05
8.98E-05

7.22E-06
3.62E-05
6.59E-05
9.40E-05

1.17E-05
4.18E-05
7.02E-05
9.89E-05

1.73E-05
4.60E-05
7.51E-05

2.17E-05
5.10E-05
7.98E-05

2.67E-05
5.58E-05
8.43E-05

1.85E-06 8.36E-06
4.04E-05 4.64E-05

1.46E-05
5.29E-05

2.11E-05
5.93E-05

2.78E-05
6.50E-05

3.34E-05
7.19E-05

37

7.80E-05 8.42E-05
1.16E-04 1.22E-04

9.07E-05
1.28E-04

9.63E-05

1.03E-04

1.10E-04

2.17E-06
4.76E-05
9.43E-05
1.40E-04

9.01E-06
5.61E-05
1.01E-04
1.46E-04

1.78E-05
6.32E-05
1.09E-04
1.54E-04

2.49E-05
7.08E-05
1.17E-04

3.27E-05
7.86E-05
1.24E-04

4.04E-05
8.58E-05
1.32E-04

1.69E-06
5.53E-05
1.08E-04
1.61E-04

1.07E-05
6.39E-05
1.17E-04
1.70E-04

1.94E-05
7.35E-05
1.26E-04
1.78E-04

2.90E-05
8.17E-05
1.34E-04

3.73E-05
9.06E-05
1.44E-04

4.64E-05
9.97E-05
1.52E-04

1.70E-06
6.20E-05
1.22E-04
1.82E-04

1.18E-05
7.21E-05
1.32E-04
1.92E-04

2.18E-05
8.19E-05
1.42E-04
2.02E-04

3.18E-05
9.25E-05
1.52E-04

4.24E-05
1.02E-04
1.61E-04

5.16E-05
1.11E-04
1.72E-04

2.13E-06
6.78E-05
1.34E-04
2.01E-04

1.22E-05
7.96E-05
1.46E-04
2.12E-04

2.39E-05
9.06E-05
1.57E-04
2.23E-04

3.50E-05
1.02E-04
1.68E-04

4.61E-05
1.13E-04
1.79E-04

5.75E-05
1.24E-04
1.89E-04

1.07E-06
7.48E-05
1.47E-04
2.19E-04

1.40E-05
8.60E-05
1.58E-04
2.31E-04

2.53E-05
9.86E-05
1.71E-04
2.43E-04

3.79E-05
1.11E-04
1.83E-04

5.01E-05
1.23E-04
1.95E-04

6.21E-05
1.35E-04
2.07E-04

1.52E-06
7.99E-05
1.58E-04
2.36E-04

1.43E-05
9.32E-05
1.71E-04
2.49E-04

2.80E-05
1.06E-04
1.84E-04
2.62E-04

4.02E-05
1.19E-04
1.98E-04

5.41E-05
1.32E-04
2.10E-04

6.68E-05
1.45E-04
2.23E-04

1.33E-06
8.50E-05
1.69E-04
2.52E-04

1.53E-05
9.89E-05
1.82E-04
2.66E-04

2.93E-05
1.13E-04
1.96E-04
2.79E-04

4.34E-05
1.27E-04
2.10E-04

5.66E-05
1.40E-04
2.25E-04

7.14E-05
1.55E-04
2.38E-04

6.63E-07
9.00E-05
1.78E-04
2.66E-04

1.60E-05
1.05E-04
1.93E-04
2.81E-04

3.07E-05
1.19E-04
2.08E-04
2.95E-04

4.60E-05
1.34E-04
2.22E-04

5.99E-05
1.48E-04
2.37E-04

7.52E-05
1.64E-04
2.52E-04

1.34E-06 1.70E-05
9.44E-05 1.10E-04

3.23E-05
1.25E-04

4.78E-05
1.41E-04

6.38E-05
1.56E-04

7.83E-05
1.71E-04
38

1.87E-04 2.02E-04
2.80E-04 2.95E-04

2.18E-04
3.11E-04

2.34E-04

2.48E-04

2.65E-04

Data of Mosfet w = 40u Saturation

4.0175E-06
0.000044154
0.00004711
0.000048144
0.000049114
0.000050485
0.000052825

0.00003209
0.000045545
0.000047745
0.00004863
0.000049684
0.000051159

0.00003737
0.000045549
0.000047255
0.000048039
0.000049185
0.000050815

0.00004098
0.000046534
0.000047855
0.000048809
0.000049954
0.000051834

0.000042794
0.000046775
0.000047905
0.00004885
0.00005009
0.00005218

0.000004001
0.00024235
0.000251
0.00025585
0.0002612
0.00027071
0.00028971

0.0001496
0.0002443
0.00025135
0.00025611
0.00026205
0.0002729

0.0002194
0.00024635
0.00025271
0.0002574
0.0002638
0.00027645

0.00023425
0.00024796
0.00025356
0.00025836
0.00026566
0.0002802

0.0002386
0.00024925
0.00025435
0.0002593
0.00026751
0.0002842

4.1099E-06
0.0006091
0.00063026
0.00064194
0.00065416
0.00067755
0.00072712

0.00024955
0.00061625
0.00063375
0.00064489
0.00065821
0.00068545

0.00042816
0.00062051
0.00063574
0.00064674
0.00066176
0.0006938

0.00054255
0.00062451
0.00063807
0.00064915
0.00066629
0.00070354

0.00059536
0.00062782
0.00064036
0.00065181
0.00067195
0.00071517

3.9479E-06
0.001068
0.001149
0.0011705
0.00119
0.0012285
0.0013155

0.00033315
0.001112
0.0011535
0.0011735
0.001195
0.001241

0.00060326
0.0011285
0.001159
0.001178
0.0012015
0.001256

0.00081524
0.0011365
0.0011625
0.0011815
0.001209
0.001273

0.00097001
0.0011435
0.0011665
0.001185
0.001218
0.0012925

4.0745E-06
0.0014905
0.00178
0.0018145
0.0018415

0.00040986
0.001629
0.0017895
0.0018205
0.001849

0.00075871
0.0017135
0.001796
0.001825
0.0018565

0.0010555
0.0017535
0.001803
0.0018305
0.0018665

0.001299
0.00177
0.001809
0.001836
0.0018785
39

0.001893
0.002017

0.001911

0.001931

0.0019555

0.001984

4.0114E-06
0.001871
0.0025026
0.0025595
0.0025935
0.0026516
0.0028075

0.00047961
0.002095
0.00252
0.0025666
0.0026006
0.0026715

0.00090235
0.0022705
0.0025331
0.002574
0.0026106
0.0026975

0.0012745
0.0023935
0.0025425
0.00258
0.0026211
0.002728

0.001597
0.0024675
0.0025516
0.0025865
0.0026345
0.0027645

4.0194E-06
0.0022225
0.0032516
0.0033901
0.0034316
0.003489
0.003662

0.00054654
0.002525
0.003316
0.0034006
0.00344
0.0035111

0.0010369
0.0027785
0.003347
0.003409
0.0034485
0.003538

0.0014795
0.002985
0.0033655
0.003417
0.0034596
0.0035715

0.0018745
0.0031425
0.003379
0.0034245
0.0034726
0.0036135

4.0645E-06
0.0025535
0.0039566
0.004293
0.0043466
0.0043986
0.0045691

0.00060895
0.0029255
0.0040965
0.0043061
0.004354
0.0044165

0.001165
0.003252
0.0041909
0.004318
0.0043626
0.004442

0.001673
0.003533
0.004245
0.0043285
0.0043721
0.0044751

0.0021355
0.0037681
0.0042734
0.0043366
0.0043831
0.0045161

0.000003861
0.0028645
0.0046115
0.005244
0.0053236
0.0053689
0.0055165

0.00066835
0.0033035
0.0048265
0.00527
0.005332
0.0053835

0.0012855
0.0036975
0.0049951
0.0052876
0.0053406
0.005404

0.001856
0.0040476
0.0051181
0.005301
0.0053484
0.0054309

0.0023825
0.0043526
0.005199
0.0053141
0.005358
0.0054691

4.4045E-06
0.0031586
0.0052266
0.006192
0.0063486
0.0063925
0.0065026

0.00072431
0.0036595
0.0055079
0.0062585
0.0063596
0.006403

0.0013985
0.004117
0.0057449
0.0062966
0.0063682
0.0064161

0.0020291
0.0045316
0.0059385
0.0063205
0.0063775
0.0064366

0.002615
0.0049
0.0060861
0.006336
0.0063846
0.0064635

40

3.7635E-06
0.0034355
0.0058036
0.0070887
0.0074101
0.0074584
0.0075285

0.00077605
0.0039949
0.0061471
0.007216
0.0074241
0.0074656

0.0015055
0.0045125
0.006448
0.0073051
0.007436
0.0074747

0.00219
0.0049856
0.0067046
0.0073586
0.0074446
0.0074856

0.002834
0.0054166
0.0069179
0.00739
0.007452
0.0075026

3.9435E-06
0.0036945
0.0063455
0.0079269
0.0084863
0.0085549
0.0085945

0.00082576
0.0043094
0.006748
0.0081177
0.0085125
0.0085616

0.001604
0.0048821
0.0071061
0.0082641
0.0085287
0.0085659

0.002342
0.0054131
0.0074224
0.0083718
0.0085402
0.0085726

0.003039
0.0059011
0.0076961
0.0084429
0.0085492
0.0085812

3.8634E-06
0.0039365
0.0068541
0.0087123
0.009541
0.0096722
0.0096932

0.00087035
0.0046031
0.0073094
0.0089579
0.0095978
0.0096774

0.0016965
0.005229
0.0077236
0.0091624
0.0096307
0.0096812

0.0024825
0.0058126
0.0080948
0.0093269
0.0096512
0.0096846

0.0032285
0.0063541
0.0084233
0.0094514
0.0096631
0.0096874

Data of Mosfet w = 80u Saturation

2.36E-06
6.02E-05
6.30E-05
6.50E-05
6.65E-05
7.02E-05

4.45E-05
6.10E-05
6.37E-05
6.47E-05
6.71E-05

5.22E-05
6.20E-05
6.33E-05
6.52E-05
6.75E-05

5.63E-05
6.18E-05
6.39E-05
6.54E-05
6.78E-05

5.76E-05
6.25E-05
6.40E-05
6.56E-05
6.91E-05

5.93E-05
6.27E-05
6.42E-05
6.66E-05
6.93E-05

2.11E-06
4.22E-04
4.36E-04
4.46E-04
4.64E-04
5.10E-04

2.59E-04
4.26E-04
4.37E-04
4.48E-04
4.70E-04

3.83E-04
4.28E-04
4.39E-04
4.51E-04
4.75E-04

4.08E-04
4.30E-04
4.41E-04
4.53E-04
4.82E-04

4.15E-04
4.33E-04
4.42E-04
4.56E-04
4.90E-04

4.19E-04
4.34E-04
4.44E-04
4.60E-04
4.99E-04

2.17E-06 4.40E-04
1.10E-03 1.11E-03

7.62E-04
1.11E-03

9.69E-04
1.12E-03

1.07E-03
1.13E-03

1.09E-03
1.13E-03
41

1.13E-03 1.14E-03
1.16E-03 1.16E-03
1.21E-03 1.22E-03
1.33E-03

1.14E-03
1.17E-03
1.23E-03

1.15E-03
1.18E-03
1.25E-03

1.15E-03
1.18E-03
1.27E-03

1.15E-03
1.19E-03
1.30E-03

1.97E-06
2.00E-03
2.08E-03
2.12E-03
2.20E-03
2.41E-03

5.90E-04
2.03E-03
2.09E-03
2.13E-03
2.22E-03

1.08E-03
2.04E-03
2.10E-03
2.14E-03
2.25E-03

1.46E-03
2.06E-03
2.10E-03
2.15E-03
2.28E-03

1.74E-03
2.07E-03
2.11E-03
2.16E-03
2.32E-03

1.92E-03
2.07E-03
2.12E-03
2.18E-03
2.36E-03

1.98E-06
2.93E-03
3.24E-03
3.30E-03
3.40E-03
3.71E-03

7.26E-04
3.09E-03
3.25E-03
3.31E-03
3.43E-03

1.36E-03
3.16E-03
3.26E-03
3.32E-03
3.47E-03

1.89E-03
3.19E-03
3.27E-03
3.33E-03
3.51E-03

2.33E-03
3.21E-03
3.28E-03
3.35E-03
3.56E-03

2.68E-03
3.23E-03
3.29E-03
3.37E-03
3.63E-03

1.91E-06
3.77E-03
4.57E-03
4.65E-03
4.76E-03
5.15E-03

8.51E-04
4.09E-03
4.59E-03
4.66E-03
4.79E-03

1.61E-03
4.31E-03
4.60E-03
4.67E-03
4.84E-03

2.28E-03
4.45E-03
4.62E-03
4.69E-03
4.89E-03

2.86E-03
4.52E-03
4.63E-03
4.71E-03
4.96E-03

3.36E-03
4.55E-03
4.64E-03
4.73E-03
5.04E-03

1.74E-06
4.53E-03
6.04E-03
6.16E-03
6.26E-03
6.68E-03

9.68E-04
5.00E-03
6.07E-03
6.17E-03
6.29E-03

1.85E-03
5.37E-03
6.09E-03
6.18E-03
6.34E-03

2.64E-03
5.66E-03
6.11E-03
6.19E-03
6.40E-03

3.36E-03
5.86E-03
6.13E-03
6.21E-03
6.47E-03

3.99E-03
5.98E-03
6.14E-03
6.23E-03
6.56E-03

2.23E-06
5.24E-03
7.55E-03
7.79E-03
7.88E-03
8.28E-03

1.08E-03
5.83E-03
7.65E-03
7.81E-03
7.91E-03

2.07E-03
6.35E-03
7.70E-03
7.82E-03
7.95E-03

2.99E-03
6.77E-03
7.73E-03
7.83E-03
8.01E-03

3.82E-03
7.12E-03
7.76E-03
7.85E-03
8.08E-03

4.57E-03
7.38E-03
7.78E-03
7.86E-03
8.16E-03

1.50E-06
5.91E-03
8.98E-03
9.53E-03

1.18E-03
6.62E-03
9.20E-03
9.55E-03

2.28E-03
7.25E-03
9.35E-03
9.57E-03

3.30E-03
7.80E-03
9.44E-03
9.58E-03

4.25E-03
8.28E-03
9.48E-03
9.59E-03

5.12E-03
8.67E-03
9.51E-03
9.60E-03
42

9.62E-03 9.64E-03
9.94E-03

9.67E-03

9.71E-03

9.76E-03

9.84E-03

1.52E-06
6.53E-03
1.03E-02
1.14E-02
1.14E-02
1.17E-02

1.28E-03
7.35E-03
1.07E-02
1.14E-02
1.15E-02

2.48E-03
8.10E-03
1.09E-02
1.14E-02
1.15E-02

3.60E-03
8.77E-03
1.11E-02
1.14E-02
1.15E-02

4.65E-03
9.36E-03
1.12E-02
1.14E-02
1.15E-02

5.63E-03
9.87E-03
1.13E-02
1.14E-02
1.16E-02

1.39E-06
7.11E-03
1.15E-02
1.32E-02
1.33E-02
1.35E-02

1.37E-03
8.04E-03
1.20E-02
1.33E-02
1.33E-02

2.66E-03
8.89E-03
1.24E-02
1.33E-02
1.34E-02

3.88E-03
9.67E-03
1.27E-02
1.33E-02
1.34E-02

5.03E-03
1.04E-02
1.29E-02
1.33E-02
1.34E-02

6.11E-03
1.10E-02
1.31E-02
1.33E-02
1.34E-02

7.46E-07
7.66E-03
1.27E-02
1.50E-02
1.53E-02
1.53E-02

1.45E-03
8.68E-03
1.32E-02
1.51E-02
1.53E-02

2.83E-03
9.63E-03
1.37E-02
1.52E-02
1.53E-02

4.14E-03
1.05E-02
1.42E-02
1.52E-02
1.53E-02

5.39E-03
1.13E-02
1.45E-02
1.53E-02
1.53E-02

6.56E-03
1.20E-02
1.48E-02
1.53E-02
1.53E-02

1.45E-06
8.16E-03
1.37E-02
1.66E-02
1.72E-02
1.72E-02

1.53E-03
9.28E-03
1.44E-02
1.69E-02
1.73E-02

2.99E-03
1.03E-02
1.50E-02
1.70E-02
1.73E-02

4.38E-03
1.13E-02
1.55E-02
1.71E-02
1.73E-02

5.71E-03
1.22E-02
1.60E-02
1.72E-02
1.72E-02

6.97E-03
1.30E-02
1.63E-02
1.72E-02
1.72E-02

7.2 All Lab Obtained Plots:

1. FET I-V Characteristics 40 um, Saturation
2. FET I-V Characteristics 40 um, Linear
3. FET I-V Characteristics 80 um, Saturation
4. FET I-V Characteristics 80 um, Linear
5. P-N Diode I-V Characteristics, Diode 1
6. P-N Diode I-V Characteristics, Diode 2
43