AO4932

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET

TM

General Description

Features

The AO4932 uses advanced trench technology to

provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).

FET1
VDS (V) = 30V
ID = 9A
RDS(ON) < 15.8m
RDS(ON) < 19.6m

FET2
V DS(V) = 30V
I D=9A
(V GS = 10V)
<15.8m
(VGS = 10V)
<23m
(V GS = 4.5V)

UIS TESTED!
Rg,Ciss,Coss,Crss Tested

SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode

Absolute Maximum Ratings TA=25C unless otherwise noted

Symbol
Max FET1
Parameter
VDS
30
Drain-Source Voltage
VGS
Gate-Source Voltage
12
Continuous Drain
Current AF
Pulsed Drain Current B
Avalanche Current

Repetitive avalanche energy L=0.3mH

TA=25C
Power Dissipation

Junction and Storage Temperature Range

9.0

7.2

7.2

40

40

IAR

16

16

A
mJ

EAR

TJ, TSTG

Thermal Characteristics FET1

Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
C
Maximum Junction-to-Lead

t 10s
Steady-State
Steady-State

38

38

2.0

2.0

1.3

1.3

-55 to 150

-55 to 150

Thermal Characteristics FET2

Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

t 10s
Steady-State
Steady-State

Symbol
RJA
RJL

Symbol

Alpha & Omega Semiconductor, Ltd.

20

9.0

PDSM

TA=70C

Units
V

IDSM
IDM

TA=25C
TA=70C

Max FET2
30

RJA
RJL

W
C

Typ
48
74
32

Max
62.5
90
40

Units
C/W
C/W
C/W

Typ
48
74
32

Max
62.5
90
40

Units
C/W
C/W
C/W

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AO4932

FET1 Electrical Characteristics (T J=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=1mA, VGS=0V
VDS=30V, V GS=0V

30

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 12V

VGS(th)
ID(ON)

Gate Threshold Voltage

On state drain current

VDS=VGS ID=250A

1.5

VGS=4.5V, VDS=5V

40

TJ=125C

VGS=10V, ID=9A

Typ

0.01

0.1

10

1.8

2.4

13

15.8

20.2

25.2
19.6

VGS=4.5V, ID=7A

16

gFS

Forward Transconductance

VDS=5V, ID=9A

64

VSD

IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

0.4

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

1450

m
m
S

0.6

4.5

1885

pF

VGS=0V, VDS=15V, f=1MHz

224

VGS=0V, VDS=0V, f=1MHz

1.6

3.0

24

31

12.0

16

pF

92

VGS=10V, V DS=15V, ID=9A

mA

0.1

Static Drain-Source On-Resistance

IS

Units
V

RDS(ON)

TJ=125C

Max

pF

nC

3.9

nC

Qgd

Gate Drain Charge

4.2

nC

tD(on)

Turn-On DelayTime

5.5

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=9A, dI/dt=300A/s

10

Qrr

Body Diode Reverse Recovery Charge

IF=9A, dI/dt=300A/s

6.8

VGS=10V, V DS=15V, R L=1.7,

RGEN=3

4.7

ns

24.0

ns

4.0

ns
12

ns
nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
Rev 2: June 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

30
10V

4.5V

4V

VDS=5V

25

60

3.5V

40

ID(A)

ID (A)

20
15
10

20

VGS=3V

25C

0
0

DYNAMIC

1.5

VDS (Volts)
PARAMETERS
Figure 1: On-Region Characteristics

2.5

3.5

VGS(Volts)
Figure 2: Transfer Characteristics

20

2
Normalized On-Resistance

VGS=4.5V

17
RDS(ON) (m)

125

14

11

VGS=10V

VGS=10V

ID=9A

1.8
1.6

VGS=4.5V

1.4

ID=7A
1.2
1

8
0

10

15

20

25

0.8

30

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

60

90

120

150

180

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

45

1.0E+02

40

1.0E+01

ID=9A

35

125C

1.0E+00

30

IS (A)

RDS(ON) (m)

30

125C

25

25C

1.0E-01
1.0E-02

20
1.0E-03

15

1.0E-04

10

25C
1.0E-05

5
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2500

10

2000

VDS=15V
ID=9A

Capacitance (pF)

VGS (Volts)

4
2

Ciss

1500
1000
Crss

500

0
0

10

15

20

Coss

25

Qg (nC)
Figure 7: Gate-Charge Characteristics

DYNAMIC PARAMETERS
100.0

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

50
10s

RDS(ON)
limited

1.0

1ms
10ms

DC

TJ(Max)=150C
TA=25C

0.1

TJ(Max)=175C
TC=25C

40

100
Power (W)

ID (Amps)

10.0

30
20
10

0.0
0.1

10

100

VDS (Volts)

0
0.0001

0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

0.001

ZJA Normalized Transient

Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1

0.1

Single Pulse
0.001
0.00001

0.0001

PD

D=T on/T
TJ,PK=T A+PDM.ZJA.RJA
RJA=62.5C/W

0.01

0.001

0.01

0.1

Ton

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4932

FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01

1
0.9

1.0E-02
VDS=24V

0.7

1.0E-03
VSD(V)

IR (A)

20A

0.8

VDS=12V
1.0E-04

0.6
0.5

10A

0.4

5A

0.3
1.0E-05

0.2

IS=1A

0.1
1.0E-06

100
150
200
Temperature (C)
Figure 12: Diode Reverse Leakage Current vs.
PARAMETERS
Junction Temperature

25

125C

Qrr (nC)

20
25C

15
Qrr

10
5

25C

10

15

20

10

10

25

Qrr

200

400

600

6
4

25C

800

0
1000

di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt

Alpha & Omega Semiconductor, Ltd.

125C
5

10

15

20

0
25

30

2.5
Is=20A
2
25C

125

Irm

0.5

125C

trr (ns)

10

25C
S

12
Irm (A)

Qrr (nC)

25C

1.5

15

125C

15

25C

Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current

Is=20A

30

2.5

125C

10

20

di/dt=800A/us

trr

Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25

0
0

12

125C

Irm

12

100
150
200
Temperature (C)
Figure 13: Diode Forward voltage vs. Junction
Temperature

1.5
trr

25C

125C

200

0.5

0
0

di/dt=800A/us

50

30

trr (ns)

DYNAMIC

50

Irm (A)

400

600

800

0
1000

di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt

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AO4932

FET2 Electrical Characteristics (T J=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=250A, VGS=0V

30
1

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

1.3

ID(ON)

On state drain current

VGS=10V, V DS=5V

40

TJ=55C

VGS=10V, ID=9A
RDS(ON)

Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

TJ=125C
VGS=4.5V, ID=7A
VDS=5V, ID=9A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Max

5
100

nA

1.7

2.3

13

15.8

19

23

18.6

23

VGS=10V, V DS=15V, ID=9A

0.75

S
1

1250

pF

145

pF

112
VGS=0V, VDS=0V, f=1MHz

23

955
VGS=0V, VDS=15V, f=1MHz

Units
V

VDS=30V, V GS=0V

IDSS

IS

Typ

pF
0.85

17

22

nC

11.7

nC

0.5

3.4

nC

Qgd

Gate Drain Charge

4.7

nC

tD(on)

Turn-On DelayTime

ns

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=9A, dI/dt=100A/s

16.7

Qrr

Body Diode Reverse Recovery Charge

IF=9A, dI/dt=100A/s

6.7

VGS=10V, V DS=15V, R L=1.7,

RGEN=3

ns

19

ns

4.5

ns
20

ns
nC

A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
Rev 2: June 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4932

FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

45

35
10V
4.5V

40
35

4V

VDS=5V

28
21

25

ID(A)

ID (A)

30
3.5V

20

125C
14

15
10

13.4

VGS=3V

22

5
0

0
0

1.5

VDS (Volts)
Figure 1: On-Region Characteristics

26

30.76 3.5

2.5

4.5

VGS(Volts)
Figure 2: Transfer Characteristics

26

1.6

24

Normalized On-Resistance

VGS=4.5V

22
RDS(ON) (m)

16

25C

20
18
16

VGS=10V

14
12

VGS=10V

ID=9A
1.4

VGS=4.5V
1.2

ID=7A

10
0

10

15

0.8

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

1.0E+01

50

1.0E+00
ID=9A

1.0E-01

30

IS (A)

RDS(ON) (m)

40

125C

125C
1.0E-02
25C
1.0E-03

20
1.0E-04

25C

1.0E-05

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4932

FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

10

VDS=15V
ID=9A

1250
Capacitance (pF)

VGS (Volts)

8
6
4

Ciss
1000
750
500

Coss

13.4

16

22

26

250

Crss

0
0

12

16

20

15
20
25
0.76
VDS (Volts)
Figure 8: Capacitance Characteristics

Qg (nC)
Figure 7: Gate-Charge Characteristics

100.0

10

30

50
10s
40
RDS(ON)
limited

1.0

1ms

100s
Power (W)

ID (Amps)

10.0

10ms
DC

TJ(Max)=150C
TA=25C

0.1

10

0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

20

0
0.0001

100

VDS (Volts)

10

TJ(Max)=150C
TA=25C

10

0.0
0.1

30

D=T on/T
TJ,PK=T A+PDM.ZJA.RJA
RJA=62.5C/W

0.001

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

T
10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com