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STD25NF10

N-CHANNEL 100V - 0.033 - 25A DPAK


LOW GATE CHARGE STripFET POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD25NF10

100 V

< 0.038

25 A

TYPICAL RDS(on) = 0.033


EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION

3
1
DPAK

DESCRIPTION
This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS


Symbol

Value

Unit

Drain-source Voltage (VGS = 0)

100

Drain-gate Voltage (RGS = 20 k)

100

VGS

Gate- source Voltage

20

ID (*)

Drain Current (continuos) at TC = 25C

25

ID

Drain Current (continuos) at TC = 100C

21

VDS
VDGR

IDM (l)
PTOT

Parameter

Drain Current (pulsed)

100

Total Dissipation at TC = 25C

100

Derating Factor

0.67

W/C

dv/dt (1)

Peak Diode Recovery voltage slope

13

V/ns

EAS (2)

Single Pulse Avalanche Energy

480

mJ

55 to 175

Tstg
Tj

Storage Temperature
Operating Junction Temperature

() Pulse width limited by safe operating area


(*) Current Limited by Package

May 2002

(1) I SD 35A, di/dt 300A/s, VDD V (BR)DSS, Tj T JMAX.


(2) Starting T j = 25C, I D = 12.5A, VDD = 50V

1/9

STD25NF10
THERMAL DATA
Rthj-case

Thermal Resistance Junction-case Max

1.5

C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

C/W

Maximum Lead Temperature For Soldering Purpose

300

Tl

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)


OFF
Symbol
V(BR)DSS
IDSS
IGSS

Parameter

Test Conditions

Min.

Typ.

Max.

100

Unit

Drain-source
Breakdown Voltage

ID = 250 A, VGS = 0

Zero Gate Voltage


Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 C

10

Gate-body Leakage
Current (VDS = 0)

VGS = 20V

100

nA

ON (1)
Symbol

Parameter

Test Conditions

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250A

RDS(on)

Static Drain-source On
Resistance

VGS = 10V, ID = 12.5 A

Min.

Typ.

Max.

Unit

0.033

0.038

Typ.

Max.

Unit

DYNAMIC
Symbol
gfs (1)

2/9

Parameter
Forward Transconductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer
Capacitance

Test Conditions
VDS = 15 V, ID = 12.5 A
VDS = 25V, f = 1 MHz, VGS = 0

Min.

20

1550

pF

220

pF

95

pF

STD25NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

17

ns

Rise Time

VDD = 50V, ID = 12.5 A


RG = 4.7 VGS = 10V
(see test circuit, Figure 3)

60

ns

Qg

Total Gate Charge

VDD = 80V, ID =25A,VGS = 10V

55

nC

Qgs

Gate-Source Charge

12

nC

Qgd

Gate-Drain Charge

20

nC

td(on)
tr

Turn-on Delay Time

SWITCHING OFF
Symbol
td(off)
tf

Parameter
Turn-off-Delay Time
Fall Time

Test Conditions

Min.

VDD = 50V, ID = 12.5 A,


RG = 4.7, VGS = 10V
(see test circuit, Figure 3)

Typ.

Max.

60
15

Unit
ns
ns

SOURCE DRAIN DIODE


Symbol
ISD

Parameter

Test Conditions

Source-drain Current (pulsed)

VSD (2)

Forward On Voltage

ISD = 25 A, VGS = 0

Reverse Recovery Time


Reverse Recovery Charge
Reverse Recovery Current

ISD = 25 A, di/dt = 100A/s,


VDD = 50V, Tj = 150C
(see test circuit, Figure 5)

IRRM

Typ.

Source-drain Current

ISDM (1)
trr
Qrr

Min.

160

Max.

Unit

25

100

1.5

V
ns
nC
A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.


2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedence

3/9

STD25NF10
Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/9

STD25NF10
Normalized Gate Thereshold Voltage vs Temp.

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STD25NF10
Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For


Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching


And Diode Recovery Times

6/9

STD25NF10

TO-252 (DPAK) MECHANICAL DATA


mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

2.20

2.40

0.087

0.094

A1

0.90

1.10

0.035

0.043

A2

0.03

0.23

0.001

0.009

0.64

0.90

0.025

0.035

B2

5.20

5.40

0.204

0.213

0.45

0.60

0.018

0.024

C2

0.48

0.60

0.019

0.024

6.00

6.20

0.236

0.244

6.40

6.60

0.252

0.260

4.40

4.60

0.173

0.181

9.35

10.10

0.368

0.398

L2

0.8

0.031

L4

0.60

1.00

0.024

0.039

V2

0o

8o

0o

0o

P032P_B

7/9

STD25NF10

DPAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

All dimensions
are in millimeters

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix T4)*


REEL MECHANICAL DATA
DIM.

mm
MIN.

A
B

DIM.

mm
MIN.

MAX.

A0

6.8

0.267 0.275

B0

10.4

10.6

0.409 0.417

12.1

0.476

B1

1.6

MIN.

MAX.

1.5

D1

1.5

1.65

1.85

0.065 0.073

7.4

7.6

0.291 0.299

0.059 0.063
0.059

K0

2.55

2.75

0.100 0.108

P0

3.9

4.1

0.153 0.161

P1

7.9

8.1

0.311 0.319

P2

1.9

2.1

0.075 0.082

16.3

1.574
0.618

40

15.7

* on sales type
8/9

inch

0.641

MIN.

330
1.5

12.8

20.2

16.4

50

TAPE MECHANICAL DATA

inch

MAX.

MAX.
12.992

0.059
13.2

0.504 0.520
0.795

18.4

0.645 0.724
1.968

22.4

0.881

BASE QTY

BULK QTY

2500

2500