Power MOS FET

◆N-Channel Power MOS FET ■Applications

◆DMOS Structure ●Notebook PCs
◆Low On-State Resistance : 0.05Ω (max) ●Cellular and portable phones
●On-board power supplies
◆Ultra High-Speed Switching
●Li-ion battery systems
◆SOT-89 Package
◆Gate Protect Diode Built-in

■General Description ■Features

The XP161A1355PR is an N-Channel Power MOS FET with low on-state Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V )
resistance and ultra high-speed switching characteristics. : Rds (on) = 0.07Ω ( Vgs = 2.5V )
Because high-speed switching is possible, the IC can be efficiently set : Rds (on) = 0.15Ω ( Vgs = 1.5V )
thereby saving energy. Ultra high-speed switching
A gate protect diode is built-in to prevent static damage. Gate protect diode built-in
The small SOT-89 package makes high density mounting possible. Operational Voltage : 1.5V
High density mounting : SOT-89

■Pin Configuration ■Pin Assignment

PIN PIN
NUMBER NAME FUNCTION

1 G Gate

1 ２ ３ 2 D Drain
G D S
3 S Source
SOT-89
（TOP VIEW）

11 ■Equivalent Circuit ■Absolute Maximum Ratings

Ta=25 C O

PARAMETER SYMBOL RATINGS UNITS

Drain - Source Voltage Vdss 20 V
Gate - Source Voltage Vgss ±8 V
Drain Current (DC) Id 4 A
Drain Current (Pulse) Idp 16 A
1 ２ ３
Reverse Drain Current Idr 4 A
Continuous Channel Pd 2 W
Power Dissipation (note)
N-Channel MOS FET Channel Temperature Tch 150 O
C
( 1 device built-in ) Storage Temperature Tstg - 55 ~ 150 O
C

( note ) : When implemented on a ceramic PCB

846
 XP161A1355PR

■Electrical Characteristics
DC Characteristics Ta=25°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Drain Cut-off Current Idss Vds = 20V , Vgs = 0V 10 µA
Gate-Source Leakage Current Igss Vgs = ± 8V , Vds = 0V ± 10 µA
Gate-Source Cut-off Voltage Vgs (off ) Id = 1mA , Vds = 10V 0.5 1.2 V
Drain-Source On-state Resistance Rds ( on ) Id = 2A , Vgs = 4.5V 0.37 0.05 Ω
Id = 2A , Vgs = 2.5V 0.05 0.07 Ω
( note ) Id = 0.5A , Vgs = 1.5V 0.1 0.15 Ω
Forward Transfer Admittance
| Yfs | Id = 2A , Vds = 10V 10 S
( note )
Body Drain Diode
Vf If = 4A , Vgs = 0V 0.85 1.1 V
Forward Voltage

( note ) : Effective during pulse test.

Dynamic Characteristics Ta=25°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Capacitance Ciss 390 pF
Vds = 10V , Vgs = 0V
Output Capacitance Coss 210 pF
f = 1 MHz
Feedback Capacitance Crss 90 pF

Switching Characteristics Ta=25°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Turn-on Delay Time td ( on ) 10 ns
Rise Time tr Vgs = 5V , Id = 2A 15 ns
Turn-off Delay Time td ( off ) Vdd = 10V 85 ns
Fall Time tf 45 ns

11
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Thermal Resistance
Rth ( ch-a ) Implement on a ceramic PCB 62.5 °C / W
( channel-ambience )

847
 XP161A1355PR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Ta=25℃, Pulse Test Vds=10V, Pulse Test
16 16
5V, 4.5V 2.5V
14 3.5V 14
4V
3V
12 2V 12
25℃

Drain Current:Id (A)

Drain Current:Id (A)

Ta=-55℃
10 10
125℃
8 8

6 6
1.5V
4 4

2 2
Vgs=1V
0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3

Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE vs. DRAIN CURRENT
Drain-Source On-State Resistance:Rds(on) (Ω)

Drain-Source On-State Resistance:Rds(on) (Ω)

Ta=25℃, Pulse Test Ta=25℃, Pulse Test

0.15 1

0.12
Vgs=1.5V

0.09
Id=4A 0.1
2A
0.06 2.5V

4.5V
0.03

0 0.01
0 2 4 6 8 0 5 10 15 20

Gate-Source Voltage:Vgs (V) Drain Current:Id (A)

11
DRAIN-SOURCE ON-STATE RESISTANCE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE
Pulse Test Vds=10V, Id=1mA
0.15 0.4
Gate-Source Cut-Off Voltage Variance

0.3
Drain-Source On-State Resistance

Id=2A
0.12
Vgs=1.5V
:Vgs(off) Variance (V)

0.2
0.5A
:Rds(on) (Ω)

0.1
0.09
2A, 4A 0
2.5V
0.06
-0.1

2A, 4A -0.2
0.03
4.5V
-0.3

0 -0.4
-50 0 50 100 150 -50 0 50 100 150

Ambient Temp.:Topr (℃) Ambient Temp.:Topr (℃)

848
 XP161A1355PR

CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT

Vgs=0V, f=1MHz, Ta=25℃ Vgs=5V, Vdd≒10V, PW=10μs, duty≤1%, Ta=25℃
10000 1000

tf

Switching Time:t (ns)

Capacitance:C (pF)

1000 100 td(off)

Ciss

Coss
tr
100 Crss 10
td(on)

10 1
0 5 10 15 20 0 2 4 6 8 10
Drain-Source Voltage:Vds (V) Drain Current:Id (A)

REVERSE DRAIN CURRENT

GATE-SOURCE VOLTAGE vs. GATE CHARGE
vs. SOURCE-DRAIN VOLTAGE
Vds=10V, Id=4A, Ta=25℃ Ta=25℃, Pulse Test
5 16

14
Reverse Drain Current:Idr (A)
Gate-Source Voltage:Vgs (V)

4 2.5V
12
4.5V
1.5V
10
3

8
2
6 Vgs=0V, -4.5V

4
1
2

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1

Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V)

STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH

Rth(ch-a)=62.5℃/W, Implemented on a ceramic PCB
Standardized Transition Thermal Resistance:γs(t)

11
1

Single Pulse
0.1

0.01

0.001

0.0001
0.0001 0.001 0.01 0.1 1 10 100

Pulse Width:PW (s)

849
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