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ELECTRONIC DEVICES AND CIRCUITS

BRIEF NOTES
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MATERIALS UNIT – I :: ELECTRON DYNAMICS: CRO

¾ e = 1.602 ×10−19 C , m = 9.1×10−31 kg , ‘F’ force on electron in uniform electric field ‘E’
eE
¾ F=eE; acceleration a =
m
¾ If electron with velocity ' v ' moves in field ' E ' making an angle 'θ ' can be
resolved to v sin θ , v cos θ .
¾ Effect of Magnetic Field ‘B’ on Electron.
mv 2π m
¾ When B & Q are perpendicular path is circular r = ; Period ' t ' =
Be Be
¾ When slant with 'θ ' path is # Helical.
¾ EQUATIONS OF CRT
lL
¾ ELECTROSTATIC DEFLECTION SENSITIVITY Se =
2dVa
e
¾ MAGNETIC DEFLECTION SENSITIVITY S m = lL
2mVa
2eV
¾ Velocity due to voltage V, v =
m
¾ When E and B are perpendicular and initial velocity of electron is zero, the path is
u
Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where Q= ,
ω
E Be
u= , ω= .
B m

UNIT – II :: SEMICONDUCTOR JUNCTION

¾ Si , Ge have 4 electrons in covalent bands. Valency of 4. Doping with trivalent

elements makes ' p ' , Pentavalent elements makes ' n ' semiconductor.

¾ Conductivity σ = e ( n μn + p μ p ) where n, p are concentrations of Dopants.

μn & μ p are mobility’s of electron and hole respectively.

Diode equation
⎛ Vd ⎞
I d = I s ⎜ e nVT − 1⎟
⎝ ⎠

kT
VT = ; K= Boltzman Constant
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ΔVd VT kT ⎛ N A N P ⎞
¾ rd = = ; Vo = ln ⎜ ⎟
ΔI d I q ⎝ ni 2 ⎠

¾ T = 00 C + 273; q = 1.602 × 10−19 C

0 0
¾ Diode drop changes @ 2.2mv / C , Leakage current I s doubles on 10 C

dq
¾ Diffusion capacitance is cd = of forward biased diode it is ∝ I
dv
−n
¾ Transition capacitance CT is capacitance of reverse biased diode ∝ V n = 1 to 1
2 3

¾ RECTIFIERS

¾ COMPARISION

HW FW CT FW BR

VDC Vm 2Vm 2Vm

π π π
Vm Vm Vm
Vrms
2 2 2
γ
1.21 0.482 0.482
Ripple factor

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η
40.6% 81% 81%
Rectification efficiency

PIV Vm 2 Vm Vm
Peak Inverse Voltage

UNIT – III :: FILTERS

2Vm 4 ⎧1 1 ⎫
¾ Harmonic Components in FW Output, v0 = − ⎨ cos 2wt + cos 4 wt + .....⎬
π π ⎩3 15 ⎭
1
Capacitance Input Filter, γ=
4 3 f CRL

RL
Inductor Input Filter, γ=
3 2 ωL
Critical inductance
LC is that value at which
diode conducts continuously, in + ve or −ve
half cycle.

LC FILTER,

2 1.2
γ= or , for 50 Hz , L in H , C in μ F .
12ω LC
2
LC

2 X c1 X c2 Xc
LC LADDER, γ= . . ..... n
3 X L1 X L2 X Ln

2 X C1 X C2
π FILTER, γ= . .
3 RL X L

X C1 X C2
RC FILTER, γ = 2. .
RL R

¾ ZENER DIODE FWD Bias Normal

si Diode 0.7 V Drop
Reverse Bias
Zener drop = Vz forV > Vz
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¾ ZENER REGULATOR

Vi − Vz
¾ Is = ;Vi >> Vz
Rs

ΔVz
¾ rz =
ΔI z

¾ TUNNEL DIODE

¾ Conducts in
f , r , Quantum mechanical tunneling in region a-0-b-c.
b b
¾ -ve resistance b-c, normal diode c-d.
I p = peak current, I v = valley current; v p =peak voltage ≈ 65 mV, vv =valley voltage
0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

¾ VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

K Co
¾ CT = ; n=0.3 for diffusion, n=0.5 for alloy junction, CT =
(VT + VR )
n n
⎛1 + VR ⎞
⎜ VT ⎟⎠
⎝
CB 1
¾ is figure of merit, Self resonance f o =
C25 2π LS CT

¾ PHOTO DIODES

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¾ Diode used in reverse bias for light detection.

¾ Different materials have individual peak response to a range of wave lengths.

UNIT - IV

¾ BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC

I nE I
¾ Components of current are I nE , I pE at EB junction where γ = = nE
I nE + I pE I E
I nc
¾ γ = Emitter efficiency, β * = transportation factor.
I nE

¾ BE = f / b; BC = r / b

Ie = Ib + Ic
Ic I
α= ;β = c
Ie Ib
Doping Emitter Highest
Base Lowest
Ie > I c > Ib

¾ Leakage currents : I CBO , I CEO , I EBO

¾ I CEO = (1 + β ) I CBO

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¾ 3 Configurations are used on BJT, CE, CB & CC

¾
¾ Common Emitter, VI characteristics

IC
β = VCE
IB

ΔVBE ΔV
¾ Ri = hie = = β re ; rce = r0 = ce
ΔI B ΔI c

Input Characteristics Circuit Output Characteristics

AC Equivalent Circuit

¾ COMMON BASE VI CHARACTERISTICS

IC β
¾ α= ;α =
IE 1+ β

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AC Equivalent Circuit
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ΔVEB I ΔVcb
¾ hib = = re ; h fb = C ; rcb =
ΔI E Ie VCB
ΔI c

AMPLIFIER COMPARISON

COMPARISON
CB CE CF

BE BC
Ri LOW MED HIGH

SATURATION f/b f/b

AI AI β β +1
ACTIVE f/b r/b
AV High High <1

CUT OFF r/b r/b

Ro High High low

UNIT - V
¾ h- parameters originate from equations of amplifier
vi = hi ii + hr v2 , i2 = h f ii + h0v2
vi & ii are input voltage and current
v2 & i2 are output voltage and current
¾ hi → input impedance hie , hib , hic ⎡⎣ β re , re , ( β + 1) re ⎤⎦

¾ h f → current gain h fe , h fb , h fc ⎡⎣ β , α , (1 + β ) ⎤⎦
¾ hr → reverse voltage transfer hre , hrb , hrc
¾ ho → output admittance hoe , hob , hoc

¾ FIELD EFFECT TRANSISTOR, FET is Unipolar Device

Construction n-Channel p-Channel

¾ S=Source, G=Gate, D=Drain

¾ GS Junction in Reverse Bias Always
¾ Vgs Controls Gate Width

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¾ VI CHARACTERSTICS

Transfer Characteristics Circuit Forward Characteristics

¾ Shockley Equation
2
⎛ Vgs ⎞ ⎛ V ⎞
¾ I d = I dss ⎜ 1 − ⎟⎟ , g m = g m 0 ⎜1 − gs ⎟⎟
⎜ V ⎜ V
⎝ p ⎠ ⎝ p ⎠

¾ MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet Symbols Enhancement Mosfet

¾ Depletion Type MOSFET can work width Vgs > 0 and Vgs < 0

MOSFET JPET

High Ri = 10 −108
10

R0 = 50 k Ω ≥ 1mΩ

Depletion Depletion
Enhancement Mode Mode
Transfer Forward
Delicate Rugged
Characteristics Characteristics

¾ Enhancement MOSFET operates with, Vgs > Vt , Vt = Threshold Voltage

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Forward Characteristics Transfer Characteristics

VDS ( sat ) = VGS − VT , I ds (ON ) = K (VGS − VT )

2

JFET I D Table COMPARISIONS

Vgs ID BJT FET

0 I DSS Current controlled Voltage controlled

0.3 VP I DSS High gain Med gain

2
Bipolar Unipolar
0.5 VP I DSS
4 Temp sensitive Little effect of T
VP 0 High GBWP Low GBWP

UNIT – VI :: BIASING in BJT & JFET

¾ Fixing Operating Point Q is biasing

Fixed Bias Emitter Stabilized Feedback Bias

VCC = I B RB + VBE Fixed Bias VCC = ( β + 1) RC I B + I B RB +VBE

VCC = I B RB + VBE + ( β + 1) Re

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VCC R2
VB = ,
R1 + R2
VE
VE = VB − VBE ; I C ≈
RE
Vcc = ( β + 1)( Rc + Re ) Ib
+ Ib.Rb + Vbe

VOLTAGE DIVIDER BIAS EMITTER STABILIZED

FIXED BIAS

STABILITY EQUATIONS

¾ ΔI c = S1ΔI c 0 + S2 ΔVBE + S3 Δβ

¾ S1 =
ΔI C
; S2 =
ΔI C ΔI
; S3 = C , STABILITY FACTOR S =
( β + 1)
ΔI CO ΔVBE Δβ 1− β B
dI
dI C
¾ S must be as small as possible, Most ideal value =1
dI B
¾ How to do determine stability factor for bias arrangement? Derive and
dI C
substitute in S
Zl
¾ Amplifier formulae: AV = AI , Z i measured with output shorted
Zi
¾ Z0 measured with input shorted
¾ CE amplifier A I ≅ h fe or β ;
VT R
¾ Z i = β re; re = ; Av = − L ;
I re
R
¾ CB amplifier A1 = α ; Av = L ; Z i = re
re

CC amplifier A I = ( β + 1) ; AV = 1 − ; Ri = ( h fe + 1) RE + hie
hie
¾
Ri
¾ H Parameter Model CE
h fe ZL
¾ AI = ; AV = h fe
1 + hoe zl hie
RL
¾ CB amplifier Ri = hib ; AI = h fb ; AV = h fb .
hib
¾ FET
¾ CS amplifier AV = − g m ( Rd || rd ) ; Z 0 = Rd

Rs
¾ Common Gate Amplifier AV = g m Rd , Z i =
1 + g m Rs

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g m Rs 1
¾ Common Drain AV = ; Zo =
1 + g m Rs gm
¾ RC Coupled Amplifiers

φ = tan −1 ⎛⎜ f1 f ⎞⎟ ; A =
1 1
¾ If cut off frequency f1 = ,
2π RC ⎝ ⎠ 1+ j ⎛⎜ 1
f ⎞
⎝ f ⎟⎠
¾ Slope = 6dB / octave, 20dB / decade , Octave= f
or 2 f
2
¾ f β is beta cut off frequency where h fe → falls by 0.707
¾ fα is α cut off frequency where α = 0.707
¾ ft is h fe = 1 gain bandwidth product.

UNIT – VII :: FEED BACK AMPLIFIERS

¾ Amplifier gain stands for any of Voltage amplifier, Current amplifier, Trans resistance
Trans admittance amplifier

A X X
Af = ; A= 0 ; β = f
1 + Aβ Xi X0

Xi = Xs − X f

¾ + Ve feed back amplifier depends on |1 + Aβ | > 1 − ve f b , < 1 + ve f b

−
¾ Feed back reduces noise distortion, gain variation due to parameters, increases BW.
(1 + Aβ ) is called de-sensitivity factor.

¾ Feed back amplifiers

Voltage series, voltage shunt; Current series, current shunt

for voltage, current series

zi f = zi (1 + Aβ )
A
Af = , for all
1 + Aβ
zi
zi f = , for voltage or current shunt
1 + Aβ
zo f = zo (1 + Aβ ) , for current series, shunt
z0
zo f = , for voltage series and shunt.
1 + Aβ

UNIT – VIII :: OSCILLATORS

¾ Barkausen Criterion for oscillation loop gain =1, θ =00, 3600.

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¾ HARTLEY OSCILLATOR
1 L2
f = , LT = L1 + L2 ± M , ; β = ,
2π LT C L1
COLLPITS OSILLATOR,
L1 , L2 replaced by C1 ,C2 ,
1
C replaced by L; f =
2π LCT

¾ CRYSTAL OSCILLATORS
¾ Tuned ckt replaced with Crystal

1
ωs = ,
LC
1
ωp =
LCT

¾ Phase shift oscillator

FET MODEL
1
f = , A = 29 ,
2π 6 RC
Minimum RC sections 3

BJT MODEL
1
f = , A = 29 ,
⎛ 4R ⎞
2π RC 6 + ⎜ C ⎟
⎝ R ⎠
Minimum RC sections 3

¾ Wein Bridge Oscillator

1
f = ,
2π R1 R2C1C2
1 1
if R1=R2=R, C1=C2=C , f = ; A= =3
2π RC β

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