NPN Silicon AF Transistors BC 635

… BC 639

● High current gain

● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 636, BC 638,
2
BC 640 (PNP) 3
1

Type Marking Ordering Code Pin Configuration Package1)

1 2 3
BC 635 – Q68000-A3360 E C B TO-92
BC 637 Q68000-A2285
BC 639 Q68000-A3361

If desired, selected transistors, type BC 63 ★ –10 (hFE = 63 … 160), or BC 63 ★ –16

(hFE = 100 … 250) are available. Ordering codes upon request.

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 5.91

 BC 635
… BC 639

Maximum Ratings
Parameter Symbol Values Unit
BC 635 BC 637 BC 639
Collector-emitter voltage VCE0 45 60 80 V
Collector-base voltage VCB0 45 60 100
Emitter-base voltage VEB0 5
Collector current IC 1 A
Peak collector current ICM 1.5
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TC = 90 ˚C1) Ptot 0.8 (1) W
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance
Junction - ambient1) Rth JA ≤ 156 K/W
Junction - case2) Rth JC ≤ 75

1) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group 2
 BC 635
… BC 639

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 mA
BC 635 45 – –
BC 637 60 – –
BC 639 80 – –
Collector-base breakdown voltage V(BR)CB0
IC = 100 µA
BC 635 45 – –
BC 637 60 – –
BC 639 100 – –
Emitter-base breakdown voltage V(BR)EB0 5 – –
IE = 10 µA
Collector cutoff current ICB0
VCB = 30 V – – 100 nA
VCB = 30 V, TA = 150 ˚C – – 20 µA

Emitter cutoff current IEB0 – – 100 nA

VEB = 4 V
DC current gain hFE –
IC = 5 mA; VCE = 2 V 25 – –
IC = 150 mA; VCE = 2 V1) 40 – 250
IC = 500 mA; VCE = 2 V1) 25 – –
Collector-emitter saturation voltage1) VCEsat – – 500 mV
IC = 500 mA; IB = 50 mA
Base-emitter voltage1) VBE) – – 1 V
IC = 500 mA; VCE = 2 V

AC characteristics
Transition frequency fT – 100 – MHz
IC = 50 mA, VCE = 10 V, f = 20 MHz

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 3
 BC 635
… BC 639

Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA)
VCB = 30 V

Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE)

VCE = 2 V

Semiconductor Group 4
 BC 635
… BC 639

DC current gain hFE = f (IC) Collector-emitter saturation voltage

VCE = 2 V VCEsat = f (IC)
hFE = 10

Transition frequency fT = f (IC)

VCE = 10 V, f = 20 MHz

Semiconductor Group 5
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.