polyfet rf devices

LK701

General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER LDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 70.0 Watts Push - Pull
Laser Driver and others.
TM Package Style AK
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
150 Watts 1.00 C/W 200 C -65 C to 150 C 9.0 A 70 V 70 V 20 V

RF CHARACTERISTICS ( 70.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 14 dB Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz
η Drain Efficiency 55 % Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 65 V Ids = 0.20 mA, Vgs = 0V

Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 1 7 V Ids = 0.20 A, Vgs = Vds

gM Forward Transconductance 1.6 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.65 Ohm Vgs = 20V, Ids = 8.00 A

Idsat Saturation Current 10.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 60.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 1.6 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
 LK701

POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE

LK701 POUT VS PIN F=500 MHZ; IDQ=0.3A; VDS=28V L1B 1DIE CAPACITANCE

50 19
100

48 18
Ciss
46
Pout 17
Coss
44 16

Gain 10
42 1 dB Compression 70W 15

40 14
Efficiency = 55%
Crss
38 13

36 12 1

22 24 26 28 30 32 34 36 38 0 5 10 15 20 25 30

PIN IN dBm VDS IN VOLTS

IV CURVE ID & GM VS VGS

L1B 1 DIE ID, GM vs VG
L1B 1 DIE IV
10
12

ID
10

8
ID IN AMPS

6
1 GM
4

0
0 2 4 6 8 10 12 14 16 18 20
VDS IN VOLTS
0.1
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
0 2 4 Vgs
6 in Volts
8 10 12 14

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 04/27/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com