SD210DE-2/214DE-2

Vishay Siliconix

N-Channel Lateral DMOS FETs

(Available Only In Extended Hi-Rel Flow)

PRODUCT SUMMARY
Part Number
SD210DE-2 SD214DE-2

V(BR)DS Min (V)

30 20

VGS(th) Max (V)

1.5 1.5

rDS(on) Max (W)

45 @ VGS = 10 V 45 @ VGS = 10 V

Crss Max (pF)

0.5 0.5

tON Max (ns)

2 2

FEATURES
D D D D D Ultra-High Speed SwitchingtON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode

BENEFITS
D D D D D High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation

APPLICATIONS
D D D D D Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver

DESCRIPTION
The SD210DE-2/214DE-2 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE-2 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and " voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. The SD210DE/214DE are available only in the 2 extended hi-rel flow. The Vishay Siliconix 2 flow complies with the requirements of MIL-PRF-19500 for JANTX discrete devices. For similar products see: quad arraySD5000I-2, and Zener protectedSD211DE-2/213DE-2/215DE-2.

TO-206AF (TO-72)

S 1 4

Body Substrate (Case)

2 D Top View

3 G

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 V Gate-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "30 V Drain-Source Voltage (SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V (SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V Source-Drain Voltage (SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 10 V (SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 20 V (SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 30 V (SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V Source-Substrate Voltage (SD210DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 15 V (SD214DE-2) . . . . . . . . . . . . . . . . . . . . . . . . 25 V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16 from case for 10 seconds) . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes: a. Derate 3 mW/_C above 25_C

Drain-Substrate Voltage

Applications InformationSee Applications Note AN502 Document Number: 70294 S-02889Rev. E, 21-Dec-00 www.vishay.com

SD210DE-2/214DE-2
Vishay Siliconix

SPECIFICATIONSa
Limits
SD210DE-2 SD214DE-2

Parameter Static

Symbolb

Test Conditionsb

Typc

Min

Max

Min

Max

Unit

VGS = VBS = 0 V, ID = 10 mA Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage Drain-Source Leakage V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS(off) VGS = VBS = 5 V, ID = 10 nA VGD = VBD = 5 V, IS = 10 nA VGB = 0 V, ID = 10 nA, Source Open VGB = 0 V, IS = 10 mA, Drain Open VDS = 10 V VGS = VBS = 5 V VDS = 20 V VSD = 10 V Source-Drain Leakage Gate Leakage Threshold Voltage ISD(off) IGBS VGS(th) VGD = VBD = 5 V VSD = 20 V

35 30 22 35 35 0.4 0.9 0.5 0.8 0.001 0.8 58 38 30 26 24

30 10 10 15 15 10 10 10 10 0.1 0.5 1.5 70 45 0.1 0.1 1.5 70 45 W V nA 20 20 25 25 V

VDB = VSB = 0 V, VGB = "40 V VDS = VGS, ID = 1 mA, VSB = 0 V VGS = 5 V VGS = 10 V

Drain-Source On-Resistance

rDS(on)

VSB = 0 V ID = 1 mA

VGS = 15 V VGS = 20 V VGS = 25 V

Dynamic
gfs Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance gos C(GS+GD+GB) C(GD+DB) C(GS+SB) Crss VDS = 10 V, f = 1 MHz VGS = VBS = 15 V VDS = 10 V, VSB = 0 V, ID = 20 mA f = 1 kHz 11 0.9 2.5 1.1 3.7 0.2 3.5 1.5 5.5 0.5 3.5 1.5 5.5 0.5 pF 10 10 mS

Switching
td(on) Turn-On Time tr td(off) tf Notes: a. TA = 25_C unless otherwise noted. b. B is is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. VSB = 0 V, VIN 0 to 5 V, RG = 25 W VDD = 5 V, RL = 680 W 0.5 0.6 2 6 1 1 1 1 ns

Turn-Off Time

DMCBB

www.vishay.com

Document Number: 70294 S-02889Rev. E, 21-Dec-00

SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Gate-Source Voltage
10 nA r DS(on) Drain-Source On-Resistance ( W ) 300 1 nA ID (off) @ VGS = VBG = 5 V IS(off) @ VGD = VBD = 5V ISBO @ VGB = 0 V, Drain Open VGS = 4 V

Leakage Current vs. Applied Voltage

240

180

Leakage

IS(off) 100 pA ID(off) ISBO 10 pA

120 5V 60

10 V IGSS (Diode) 1 pA 0 4 8 12 16 20 0 4 8 12 16 20 VSB Source-Body Voltage (V) Applied Voltage (V)

On-Resistance vs. Temperature

100 r DS(on) Drain-Source On-Resistance ( W ) ID = 5 mA, VBS = 0 V g fs Forward Transconductance (mS) 80 VGS = 5 V 60 10 V 15 V 40 20 V 20 16 20

Common-Source Forward Transconductance vs. Drain Current

VDS = 15 V VBS = 0 V

TA = 55_C 12 25_C

8 125_C 4

0 60 20 20 60 100 140 TA Temperature (_C)

0 1 10 ID Drain Current (mA) 100

Switching Characteristics
700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 V GS(th) Gate-Source Threshold Voltage (V) 5

Threshold Voltage vs. Temperature

VGS = VDS = VTH ID = 1 mA 4

R L ( W)

VBS = 10 V 5 V 1 V 0.5 V

1 0V 0 60 20 20 60 100 140

tf Fall Time (ns)

TA Temperature (_C)

Document Number: 70294 S-02889Rev. E, 21-Dec-00

www.vishay.com

SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage vs. Substrate-Source Voltage
5 V GS(th) Gate-Source Threshold Voltage (V) VGS = VDS = VTH ID = 1 mA TA = 25_C 100 ID(off) @ VGS = VBS = 5 V, VDS = 10 V IS(off) @ VGD = VBD = 5 V, VSD = 10 V IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open H Leakage (nA) IS(off) 10 ID(off)

Leakage Current vs. Temperature

2 L 1

IGSS (Diode)

ISBO

0 0 4 8 12 16 20

1 25 50 75 100 125 VBS Body-Source Voltage (V) TA Temperature (_C)

Capacitance vs. Gate-Source Voltage

10 VDS = 10 V, f = 1 MHz VGS = VBS 8 I B Body Leakage Capacitance (pF)

100 mA 10 mA 1 mA 100 nA 10 nA 1 nA

Body Leakage Current vs. Drain-Body Voltage

ID = 13 mA

C(GS+SB) C(GS+GD+GB)

1 mA 100 pA 10 pA 1 pA

2 C(GD+DB) C(DG) 0 0 4 8 12 16 20 0 4 8 12 16 20

VGS Gate-Source Voltage (V)

VDB Drain-Body Voltage (V)

Input Admittance
100 VDS = 10 V ID = 10 mA TA = 25_C

100 VDS = 10 V ID = 10 mA TA = 25_C

Forward Admittance

gfs 10 (mS) bis (mS) 10

gis

1 bfs

0.1 100 200 500 1000

0.1 100 200 500 1000

f Frequency (MHz)

f Frequency (MHz)

www.vishay.com

Document Number: 70294 S-02889Rev. E, 21-Dec-00

SD210DE-2/214DE-2
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Admittance
1 VDS = 10 V ID = 10 mA TA = 25_C brs 0.1 (mS) (mS) 10 100 VDS = 10 V ID = 10 mA TA = 25_C

Output Admittance

+grg grg 0.01

bog 1 gog

0.001 100 200 500 1000

0.1 100 200 500 1000

f Frequency (MHz)

f Frequency (MHz)

Output Characteristics
50 VBS = 0 V TA = 25_C gos Output Conductance (mS) 40 I D Drain Current (mA) VGS = 5 V 0.8 1.0

Output Conductance vs. Drain Current

VBS = 0 V f = 1 kHz VDS = 5 V 0.6 10 V 0.4

30

20

4V

3V 10 2V 0 0 4 8 12 16 20

0.2

15 V

0 0 4 8 12 16 20 ID Drain Current (mA)

VDS Drain-Source Voltage (V)

SWITCHING TIME TEST CIRCUIT

To Scope +VDD +5 V 510 W VIN VOUT To Scope Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz 0V td(on) +VDD VOUT 0V tr tf 50% 10% td(off) 50%

RL

VIN

Sampling Scope
51 W tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz

90%

Document Number: 70294 S-02889Rev. E, 21-Dec-00

www.vishay.com