1

A Model of Electrical Conductivity in Porous Silicon Semiconductor

Path Integral Approach
/

(Porous
Silicon)
- (Feynman-Vernon)

(Feynmandiagram)
2
1) (Geometrical Constraint)
2) (Hopping electrons transport)
(Tunneling electrons transport)

, , ,

1.
(Porous Silicon) Uhlir (Bell Labs)
.. 1956 (Silicon wafer)

(Electrical etching) [1] ..1990 Canham
(Photoluminescens)
[2]
(Optoelectronics)
[3]
(Photonic Detectors) ,(Light Emitting Diod , LED) ,
(Waveguides) ,(Sola cells) [4]

(Hopping electrons transport)
(Tunneling electrons transport) [5]
Effective medium approximation [6] Monte Carlo [7] Tight
binding [8]


( )


linear responds theory
reduced density matrix

(Feynman - diagram)
2
1) (Geometrical Constraint)
2) (Hopping electrons transport)
(Tunneling electrons transport)
2. : / /



:;

<
1
(? => @> %> ) + A> &()%>B !"() 
=
+  (  ) + 
2
2=> >


>

>

(2.1)

 % (  ) ( )
 &()

N

Feynman - Vernon [9] Reduced
density matrix
C( )* , *+ , .

'( )* , *+ , , , + , 0.

DE

DE

=    + '( )* , *+ , , , + , 0.CG ( , + , 0)

FE

FE

(2.2)

Reduced density matrix

Action

1
, 
=         (  ) + !" $
2
567



6
2


(, 
 + , 
)
+
+
'( )* , * , , ,  , 0. = 

0  1
 1 +
!
4,  +
9



58

587

(2.3)

(3)
4,  +
(Influence functional)
Action [\,  +
( Influence action )


4,  +
= !

[\,  +

(2.4)

(4)
(Eeffective action)
\, 
= , 
 , 
+ [\, 

'( )* , *+ , , , + , 0. = 

567

2


\,  +


0  1
 1 +
!
9


56

58

(2.5)

587

'( )* , *+ , , , + , 0.

567

56

=  1

58

587

, "

1 +
!

 +, "

^2

0


 2 J Y P )R TR . + 2 J Z P )R + TR .



X
!
$ 4,  +



a1 +  b
\

C0

= !C\

C=Q

(2.6)

2 
2 
J Y P )R TR . + J Z P )R + TR .

\ =   X! 
1$
S

'( )* , *+ , , , + , 0.

567

7 TR
TR
P
P
2
C J  K! F JO LM Q)5RFS8 .D JO LU Q)5R FS8 . 1V
, "
 +, "

=  1
 1 +
!
I!
W 4,  +

56

58

587

(9)

[.] 2
(Gaussian distribution function)
" = c()d C J  ( ) C J  ( + )

(2.7)

(correlation function)
[10]
g(  + ) c( )( + )d C J  ( )( + )

g (  + ) hi !

j5F5+jk
ik

(2.8)
(2.9)

L ( Correlation length of the random potential

fluctuation ) hi (Variance of Gaussian random potential )
V

"

"

1. ( )

567

2
(, "
 + , "
)
'( )* , *+ , , , + , 0. =  1
 1 +
!
4,  +

56

58

587

1 


J Y J Zg((Y) (Z)) 2g((Y) (Z)) + g((Y) (Z))

X! 2 
$

(2.10)

Influence functional
Influence action

4,  +
= c!

Cumulant expansion (Kubo,1962)





a l8mN 5,nm
F l8mN 5 7,n+m
b

do>

k dFcpdk
D  cpt dFscpd(cpk dFcpdk )Fcpdt
D.v

c! p d = ! qcpdD!cp

s!

(2.11)

(2.12)

Influence action
2

4,  +
= ! [\

1 ;
2 ;

()

+ [\()

(2.13)

[\() ,  +
= c8mN , %>
do> c>  + , %>
do>
[\() ,  +
=

(2.14)

2
2
c(8mN , %>
) do> (c>  +, %>
do> ) +
c(8mN , %>
) do> (c>  + , %>
do> )
2
2

c(8mN , %>

)(8mN , %>
)do> c(8mN , %>
)(8mN , %>
)do>


(2.15)

3. /
(14), (15)

)
[11] (
) %> (Y) , (
%> (Z) , z (), z( + ) ( ) ( )
1, 2 Generating functional


> , %>

=  Y  z> ()%>B
>

z> () = A>  Vertex function

1. linear coupling (k = 1)
c%> (Z)do> = c%> (Z)do> = 0

2. Quadratic coupling (k = 2)
2.1) cz()%> (Y)%> (Z)do> =
2.3) c%> (Y)%> (Z)do> =

2.4 ) cz((Y))%> (Y)%> (Z)z((Z))do> =

2.2) cz()%+ > (Y)%> (Z)do> =

z

z

4
2.5) cz) + (Y).%+ > (Y)%> (Z)z((Z))do> =
2.6) cz)(Y).%> (Y)%> (Z)z((Z))do> =

z
z

z
z

4.
4.1 Linear Response Theory
(1.1) :
: = !"()  :; = : + : reduced density
matrix

c ' d

C( () = C( () + [C( (; ")

(4.1)

c d =  C( ()

(4.2)

c ' d =  C( ()

= 0

(4.3)
c d =  [C( ()

4.2

c|dG}G =

reduced density matrix



)l Fl .D(~p
JFE   J5 6,5+ 6 1
1 +
! O O
DE

5 ,5 7
8

()

D~p (k) )

!


DE
5 ,5 7
)l Fl 7 .D(~p () D~p (k) )
JFE   J5 6,5+ 6 1
1 +
! O O
8 8

 N
N
J LM JO LU(5(M)F5(U))F(5+(M)F5(U))D(5+(M)F5+(U))
k O

N
 N
F
J LM J LU(5(M)F5(U))F(5+(M)F5(U))D(5+(M)F5+(U))
! k O O

(4.4)

reduced density matrix


1 
2
( + ) + )[\() + [\() .

J Y J Zg((Y) (Z)) 2g((Y) (Z)) + g((Y) (Z))

C( () =     1
1 +
! 
X! 2 
$
DE

FE

56 ,567

58 ,5+8

(4.5)

5
"() = " ! 

reduced density matrix

C( () = C( ()c!

!" J Y! F (Y) J Z! F (Z)



c . . d Cumulant expansion

C( () = C( ()!

dG}G

(4.6)

cF oO JO LMo 8N 5(M)FJO LUo 8N 57 (U)d

(4.7)

! cFoOJO LMo 5(M)FJO LUo 5 (U)d (4.1)

reduced density matrix
8

8N

[C( )* , *+ , , , + , 0.

8N 7

2
= !" C0 ()c Y! F (Y) +  Z! F (Z)dG}G

(4.8)

(current density) cd = Z"

(4.3) Z (electrical conductivity )



2!
(@) = I C0 ()c Y! F (Y)  Z! F (Z)dG}G W

x, x =  Y!
0

(4.9)

2@

(Y)  Z!2@ (Z)

(4.10)

(@) =

Current operator
(@) =

2!
)C0 ()c@ x, x dG}G .

>o

(4.11)

2! 
? )C0 ()c@ x, x dG}G .


(4.12)

path integral
(@) =


7
56 ,56

2
2!
( + ) + )[\() + [\() . 
0?    +   1
1 +
! 

DE

FE

58 ,5 7 8




J Y J Zg)(Y)
k 

(Z). 2g) + (Y) (Z). + g) + (Y)  +(Z).

@ x, x

(4.13)

influence functional random potential

7
56 ,56

DE
2
2! 
( + )
1 + [\() + [\() 
(@) =
0?    +   1
1 +
! 


FE

22

58 ,5 7 8

 Y  Zg)(Y) (Z). 2g) (Y) (Z). + g) (Y)  (Z). $

0

@ x, x

567

2
( 
 
)
c|,  +
d G}G =      1
 1 +
! 
|,  +

DE

56

DE

FE

58

FE

()
()
()
()
()
(s)
Z(@) = Z; (@) + Zo> (@) + Zo> (@) + Z( (@) + Z( (@) + Z( (@)

2!
()
Z; (@) =
I?
2

2!
()
Zo> (@) =
I?
2

2!
()
Zo> (@) =
I?
2

Zo> (@) =
(s)

587

2!2


&

2

 2  2  1
 1
!
2

2

&

2

 2  2  1


2

&

2

2

I?

2

&

2

2

2
(0 0 ) (1)

1
!
[\ @ x, x
W
2

(0 0 )

(0 0 )

 2  2  1
 1
!

2

2

@ x, x
W

 2  2  1
 1
!

(0 0 )

(4.14)

(4.15)

(4.16)

2!2

? c@ x, x
d0

2!2

? ([\(1) c@ x, x
d0
)

[\(2) @ x, x
W

2!2

? ([\(2) c@ x, x
d0
)

[\(3) @ x, x
W

2!2

? ([\(3) c@ x, x
d0
)




7
6

U
DE
8
2
2! 
1
( + )
()
+
+
K  V    Z g)(Y) (Z). x, x +
9
Z( (@) =
0?      1
 1
!

2

()
Z( (@)

2!2


FE

X?
c

22

57

58

58

   Z g)(Y) (Z).x, x
dG}G $
0

2
2! 
1
( + )
K  V    Z g)(Y) (Z). x, x +
9
=
0?    +   1
 1 +
! 


DE

56

FE

2!2


X?
c

5 78

58

58

   Z g)(Y) (Z).x, x
dG}G $
0

6

U
DE
8
2
2! 
1
( + )
(s)
+
+
K  V    Z g)(Y) (Z). x, x +
9
Z( (@) =
0?      1
 1
!

2

FE

2!2


X?
c

57

58

22

58

   Z g)(Y) (Z).x, x
dG}G $
0

[\() + [\() [11]

Z (@) =
()

 o k
? c@ x, x dG}G

2
 o k
2
q? c@ x, x a2b c(2 , % ) d! dG}G v

Zo> (@) =
()

(4.17)

Zo> (@) =
()

2
2 ! 
2
? c@ x, x K V c(2 , % ) d! dG}G
2


Zo> (@) =
(s)

2 ! 
2
? c@ x, x K V c(2 , % )(2 , % )d! dG}G

2

()
Z( (@)

2 ! 
1
=
I? c@ x, x 2    Z g((Y) (Z))dG}G W

2
0

()
Z( (@)

2 ! 
1
=
I? c@ x, x 2    Z g((Y) (Z))dG}G W


(s)
Z( (@)

2 ! 
1
=
I? c@ x, x 2    Z g((Y) (Z))dG}G W

2
0

(4.18)

(4.1) , (4.2)

W

Z? (@)

+
+

+
+

+ () (4.19)

5.
(4.19)
constraint path
path path correlation
constraint path
quadratic coupling path correlation
(geometrical constraint)

hopping electron transport
tunneling tunneling electron transport
(.) correlation

10

[1] Ulhir . 1956. Bell Syst. Tech. J. 35:333.
[2] Canham L.T. . 1990. Silicon quantum wire array fabrication by electrochemical and chemical
dissolution of wafers. Appl. Phys. Lett. 57:1046.
[3] Cullis G. ., Canham L.T. ., Calcot P.D.J. .1997. The structural and luminescence properties of porous
silicon. J. Appl. Phys. 82:909.
[4] Bis O. i ., Pavasi L.. 2000. Porous silicon: a quantum sponge structure for silicon based optoelectronics.
Surface Science Reports. 38:1-126.
[5] Urbach B. ., Axelrod E. and Saar A. . 2007 . Correlation between transport, dielectric, and optical
properties of oxidized and nonoxidized porous silicon. Phys. Rev. B. 75:205330(1) -205330(5).
[6] Ben-Chorin M.., Mo ller F.., Koch F. ., Schirmacher W., Eberhar M. d. 1995. Hopping transport on
a fractal: ac conductivity of porous silicon . Phys. Rev. B. 51: 2199-2213.
[7] Scher H.., Lax M. . 1973.Stochastic transport in a dissorded solid. Phys. Rev. B. 7 : 4491.
[8] Cruz H., Luis D., Capuj N.E., Pavesi L. 1998. J. Appl. Phys. Two-dimensional tight-binding model
of ac conductivity in porous silicon. 83: 7693.
[9] Feynman , R.P. and Vernon F.L.. Jr. 1963 . The Theory of Gerneral Quantum System Interacting with
a Linear Dissipative System. Ann. Phys. (N.Y). 24: 118-173.
[10] Sa-yakanit V ., Roussignol Ph ., Slavcheva G. 2000. Effect of random well-width fluctuations on the
exiton optical absorption spectrum in single quantum wells. Phys. Rev. B. 62:5079-5091.
[11] Juan Pablo Hu B.L ., and Yuhong Zhang. 1993. Quantum Brownian motion in a General
EnvironmentII:Nonlinear coupling and perturbative approach. Phys.Rev. D. 47: 1756-1593.