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INVERTING INPUT 2 – 7 V+
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C µA741N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C µA741CN SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA741CN SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C µA741F 0580A
8-Pin Ceramic Dual In-Line Package (CERDIP) 0 to +70°C µA741CF 0580A
8-Pin Small Outline (SO) Package 0 to +70°C µA741CD SOT96-1
DC ELECTRICAL CHARACTERISTICS
TA = 25°C, VS = ±15V, unless otherwise specified.
µA741 µA741C
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max Min Typ Max
VOS Offset voltage RS=10kΩ 1.0 5.0 2.0 6.0 mV
RS=10kΩ, over temp. 1.0 6.0 7.5 mV
∆VOS/∆T 10 10 µV/°C
IOS Offset current 20 200 20 200 nA
Over temp. 300 nA
TA=+125°C 7.0 200 nA
TA=-55°C 20 500 nA
∆IOS/∆T 200 200 pA/°C
IBIAS Input bias current 80 500 80 500 nA
Over temp. 800 nA
TA=+125°C 30 500 nA
TA=-55°C 300 1500 nA
∆IB/∆T 1 1 nA/°C
RL=10kΩ ±12 ±14 ±12 ±14 V
VOUT Output voltage swing
RL=2kΩ, over temp. ±10 ±13 ±10 ±13 V
RL=2kΩ, VO=±10V 50 200 20 200 V/mV
AVOL Large-signal voltage gain RL=2kΩ, VO=±10V,
over temp. 25 15 V/mV
Offset voltage adjustment range ±30 ±30 mV
RS≤10kΩ 10 150 µV/V
PSRR Supply voltage rejection ratio
RS≤10kΩ, over temp. 10 150 µV/V
70 90 dB
CMRR Common-mode rejection ratio
Over temp. 70 90 dB
1.4 2.8 1.4 2.8 mA
ICC Supply current TA=+125°C 1.5 2.5 mA
TA=-55°C 2.0 3.3 mA
VIN Input voltage range (µA741, over temp.) ±12 ±13 ±12 ±13 V
RIN Input resistance 0.3 2.0 0.3 2.0 MΩ
50 85 50 85 mW
PD Power consumption TA=+125°C 45 75 mW
TA=-55°C 45 100 mW
ROUT Output resistance 75 75 Ω
ISC Output short-circuit current 10 25 60 10 25 60 mA
1994 Aug 31 2
Philips Semiconductors Product specification
DC ELECTRICAL CHARACTERISTICS
TA = 25°C, VS = ±15V, unless otherwise specified.
SA741C
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max
VOS RS=10kΩ 2.0 6.0 mV
Offset voltage RS=10kΩ, over temp. 7.5 mV
∆VOS/∆T 10 µV/°C
IOS 20 200 nA
Offset current Over temp. 500 nA
∆IOS/∆T 200 pA/°C
IBIAS 80 500 nA
Input bias current Over temp. 1500 nA
∆IB/∆T 1 nA/°C
RL=10kΩ ±12 ±14 V
VOUT Output voltage swing
RL=2kΩ, over temp. ±10 ±13 V
RL=2kΩ, VO=±10V 20 200 V/mV
AVOL Large-signal voltage gain
RL=2kΩ, VO=±10V, over temp. 15 V/mV
Offset voltage adjustment range ±30 mV
PSRR Supply voltage rejection ratio RS≤10kΩ 10 150 µV/V
CMRR Common mode rejection ration 70 90 dB
VIN Input voltage range Over temp. ±12 ±13 V
RIN Input resistance 0.3 2.0 MΩ
Pd Power consumption 50 85 mW
ROUT Output resistance 75 Ω
ISC Output short-circuit current 25 mA
AC ELECTRICAL CHARACTERISTICS
TA=25°C, VS = ±15V, unless otherwise specified.
µA741, µA741C
SYMBOL PARAMETER TEST CONDITIONS UNIT
Min Typ Max
RIN Parallel input resistance Open-loop, f=20Hz 0.3 MΩ
CIN Parallel input capacitance Open-loop, f=20Hz 1.4 pF
Unity gain crossover frequency Open-loop 1.0 MHz
Transient response unity gain VIN=20mV, RL=2kΩ, CL≤100pF
tR Rise time 0.3 µs
Overshoot 5.0 %
SR Slew rate C≤100pF, RL≥2kΩ, VIN=±10V 0.5 V/µs
1994 Aug 31 3
Philips Semiconductors Product specification
EQUIVALENT SCHEMATIC
INVERTING INPUT
V+
Q8 Q9 Q12 Q13
Q14
NON–INVERTING
INPUT
Q1 Q2
R7
30pF
4.5Ω
Q18 Q15
Q3 R8
Q4 7.5KΩ
R5 R9
39KΩ 25Ω
Q16 OUTPUT
Q7 Q17
Q20
R1 R3 R2 R4 R12 R11
1KΩ 50KΩ 1KΩ 5kΩ 50kΩ 50Ω
V–
OFFSET NULL
SL00096
1994 Aug 31 4
Philips Semiconductors Product specification
POWER CONSUMPTION — mW
–55oC < TA < +125oC oCoC
32 80 TATA
= 25
= 25
RL > 2kΩ 12
28
10
24 60
20 8
16 6 40
12
4
8 20
4 2
0 0 0
5 10 15 20 5 10 15 20 5 10 15 20
SUPPLY VOLTAGE — +V SUPPLY VOLTAGE — +V SUPPLY VOLTAGE — +V
Input Bias Current as a Function Input Resistance as a Function Input Offset Current as a
of Ambient Temperature of Ambient Temperature Function of Supply Voltage
500 10.0 40
VS = +15V VS = ±15oC TA = 25oC
INPUT BIAS CURRENT — nA
3.0 30
300
1.0 20
200
0.5
0.3 10
100
0 0.1 0
–60 –20 20 60 100 140 –60 –20 20 60 100 140 5 10 15 20
70
INPUT OFFSET CURRENT — nA
26
POWER CONSUMPTION — mW
80 20
50 18
60
16
40 40 14
12
20
30
10
0 8
–60 –20 20 60 100 140 –60 –20 20 60 100 140
0.1 0.2 0.5 1.0 2.0 5.0 10
SL00097
1994 Aug 31 5
Philips Semiconductors Product specification
VS = + 15V
TA = 25oC
TA = 25oC 10 –22
30 10 –14
25 10 –15 10 –23
20 10 –16 10 –24
15 10 –17 10 –25
10 10 –18 10 –26
–60 –20 20 60 100 140 10 100 1K 10K 100K 10 100 1K 10K 100K
TEMPERATURE — oC FREQUENCY — Hz FREQUENCY — Hz
100 106 0
VS = + 15V VS = + 15V
105 VS = + 15V
TA = 25oC TA = 25oC TA = 25oC
–45
104
10 PHASE DEGREES
VOLTAGE GAIN
10–100kHz 103
–90
10–1kHz 102
1
10
10–1kHz –135
1
0.1 0 –180
100 1K 10K 100K 1 10 100 1K 10K 100K 1M 10M 1 10 100 1K 10K 100K 1M 10M
40 100 28
PEAK–TO–PEAK OUTPUT SWING — V
36 VS = + 15V 90 VS = + 15V
24
32 TA = 25oC TA = 25oC
80
RL = 10kΩ 20
28 70
OUTPUT — mV
24 16 VS = + 15V
60
TA = 25oC
20 50 12
RL = 2kΩ
16 40 CL = 100pF
8
12 30
4
8 20 10%
4 10 0 RISE TIME
0 0
100 1K 10K 100K 1M 1 10 100 1K 10K 100K 1M 10M 0 0.5 1.0 1.5 2.0 2.5
1994 Aug 31 6
Philips Semiconductors Product specification
24
+
20 µA741
16 –
12
(VOLTAGE FOLLOWER) –V
8 + 15 VOLT SUPPLIES
THD < 5% 10KΩ
4
0
10 100 1K 10K 100K –V
FREQUENCY — Hz
SL00099
1994 Aug 31 7