TOSHIBA TC74HC540,54 1 AP/AF/AFW TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HCS40AP, TC74HCS40AF, TC74HCS40AFW TC74HCS41AP, TC74HCS41AF, TC74HC5S41AFW OCTAL BUS BUFFER TC74HCS40AP / AF /AFW INVERTING .3- STATE OUTPUTS. TC74HC541AP / AF/AFW_NON — INVERTING '3~STATE OUTPUTS (Note) The JEDEC SOP (FW) is not available in Japan The TCT4HC540A/TC74HC541A are high speed CMOS OCTAL BUS BUFFERs fabricated with silicon gate C2MOS technology. ‘They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The TC74HC540A is an inverting type, and the TC7AHC541A is a non-inverting type. When either Gi or G2 are high, the terminal outputs are in the high-impedance state. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES ‘+ High Speed ‘+ Low Power Dissipation: yg = 1Onsityp.) at Voo=5V loo = 4uA(Max.) at Ta= 25°C P(01P20-P-300-2.54A) Weight: 1309 Typ.) eR EAE™ 1 ($0920-P-300-1.27) Weight 0.229 (Typ.) aan Fw (S0L20-P-300-1.27) ‘Weight 0.469 (Typ.) ‘TRUTH TABLE ‘+ High Noise Immunity: Voit = Vii. = 28% Voo (Min.) __INPUTS ‘OUTPUTS + Output Drive Capability ~ 15 LSTTL Loads G1 [62 [An | yn* | Yn* + Symmetrical Output Impedance-~ | lox | 6mA(Min.) H |x |x z z + Balanced Propagation Delays tpin=tpit x[H]|x|[z | 2 + Wide Operating Voltage Range~-Voo (opr.) = 2V~6V cyeyata Te + Pin and Function Compatible with 749540/541 cjefetets X= Don’t Care 2 : High Impedance Ym HCSat Yn HE540 PIN ASSIGNMENT TC7AHCS40A TC7AHCS41A Vee a4 20 Vee & At 2 19 G2 I a2 3 Lis v1 ve aa 4 17 v2 ¥s nas [16 v3 Ya AS 6 {lis v4 ¥s a6 7 14 ys Ye a7 8 1113 v6 v7 as 9 {12 v7 Ys GND 10 {11 ys (oP view) 2001-05-17TOSHIBA TC74HC540,54 1 AP/AF/AFW IEC LOGIC SYMBOL TC74HC5404, TCTAHCS414, @ @ en s EN 2001-05-17TOSHIBA TC74HC540,54 1 AP/AF/AFW ABSOLUTE MAXIMUM RATINGS PARAMETER [syMBOL VALUE UNIT] 500m in the range of Ta= Supply Voltage Range [Vcc =05~7 V_ | ~40'c~65°C: Prom ba=65°0 SSVer to 85°C a derating factor o DC Input Voltage Vin 05~Vec+05 Vo] eB Ga derating facto of DC Oulput Voltage Vour =O5=Vec +05 V_} untlsuomw’ Input Diode Current ic $20 mA Output Diode Current fox +20 mA DC Output Current tour $35 mA DC Vec/ Ground Current fee. +75 mA Power Dissipation Po | 500(DIP)*/ 180 (S0P) _|_mW ‘Storage Temperature Tstg =65~150 °C RECOMMENDED OPERATING CONDITIONS PARAMETER SyMB0L UNIT ‘Supply Voltage Veo Vv Input Voltage Vin Vv Output Voltage Vour Vv Operating Temperature | Topr * O~ 1000 (Ve. Input Rise and Fall Time | t,, tr O~ 500 (Vcc ns. O~ 400 (Vcc: DC ELECTRICAL CHARACTERISTICS PARAMETER symBol, ‘TEST CONDITION Vee 7a=25'c [ra=—40-85°¢] UNIT} (4 | min. | Tye. Tmax, | min, [Max. 20] 150 = [450] — High - Level x] = Input veltage Min 63/433 | = | = | ase] = | 20/ - | = [oso] — | O50 Low - Level == = Input Voltage Vie éo/ = | = | tao] = | i230 | ¥ tov=—2oa | 49/42 | 29 | = | aa | = High - Level Vine ee [e853 [os | = [$3 | = ig Vou v Otkput Voitage Vin OFM. low 6 mA] 4.5 | 4.18 | 4.31 4.13 Ik==F.ema | 66 | Ses | S80 | = | 563 | — to=20-a | 48) = | 88 | 84 | = | 84 Low-Level Mine one 6d] = |oo | or | = jor Vou . v Output Voltage Vin orVin lo. =6 mA 45] = 0.17 | 0.26 0.33 lor =7.8MA_ 60] — 0.18 | 0.26 = 0.33 3: State Output Vn=Vy OF Vi, — | - feos! — Off - State Current loz vi or GND 60 205 £50 Input Leakage Current Tw Vin = Vcc or GND eo] - | — |#o1| — [#10] Quiescent Supply Current, Nee Vin = Vcc or GND 6.0 = = 4.0 = 40.0 2001-05-17