2N2222 / 2N2222A

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic Package Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25 OC) Symbol Value ST 2N2222 ST 2N2222A Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS 60 30 5 600 625 150 -55 to +150 75 40 6 V V V mA mW
O O

Unit

C C

G S P FORM A IS AVAILABLE

2N2222 / 2N2222A
Characteristics at Tamb=25 OC Symbol DC Current Gain at IC=0.1mA, VCE=10V at IC=1mA, VCE=10V at IC=10mA, VCE=10V at IC=150mA, VCE=10V at IC=500mA, VCE=10V Collector Cutoff Current at VCB=50V at VCB=60V Collector Base Breakdown Voltage at IC=10A ST 2N2222 ST Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10A Collector Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Base Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Gain Bandwidth Product at IC=20mA, VCE=20V, f=100MHz Collector Output Capacitance at VCB=10V, f=1MHz Input Capacitance at VCB=0.5V, f=1MHz Cib 30 pF Cob 8 pF fT 250 MHz ST 2N2222 ST 2N2222A ST 2N2222 VBE(sat) VBE(sat) VBE(sat) VBE(sat) 0.6 1.3 1.2 2.6 2.0 V V V v ST 2N2222 ST 2N2222A ST 2N2222 VCE(sat) VCE(sat) VCE(sat) VCE(sat) 0.4 0.3 1.6 1 V V V V ST 2N2222 ST V(BR)EBO V(BR)EBO 5 6 V V ST 2N2222 ST V(BR)CEO V(BR)CEO 30 40 V V V(BR)CBO V(BR)CBO 60 75 V V ST 2N2222 ST 2N2222A ST 2N2222 ST 2N2222A ICBO ICBO 0.01 0.01 A A hFE hFE hFE hFE hFE hFE 35 50 75 100 30 40 300 Min. Typ. Max. Unit

G S P FORM A IS AVAILABLE

2N2222 / 2N2222A

Figure 1. DC Current Gain

1000 700 500 TJ =125 C
o

h FE , DC CURRENT GAIN

300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K 25o C

-55o C VCE=1.0V VCE=10V

I C, COLLECTOR CURENT (mA)

Figure 2. Collector Saturetion Region

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25o C

0.8

0.6 I C=1.0mA 0.4

10mA

150mA

500mA

0.2

0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

I B , BASE CURENT (mA)

2N2222 / 2N2222A

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

Figure 3. Capacitances
30 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1

Figure 4. Current-Gain Bandwidth Product

500 300 200 VCE=20V TJ = 25o C

100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)

20 30 50

I C, COLLECTOR CURRENT (mA)