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CM300DU-24F
HIGH POWER SWITCHING USE
CM300DU-24F
Dimensions in mm
E2 G2
RTC
62 0.25
C2E1
E2
RTC
C1
15
(8.25)
80
G1 E1
CM
(18.5)
C2E1
E2
C1
18.25
CIRCUIT DIAGRAM
0.5 0.5
7.5 8.5
0.5 0.5
29 +1.0 0.5
21
LABEL
G1 E1
E2 G2
Aug. 1999
CM300DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 300 600 300 600 960 40 ~ +150 40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A W C C V Nm Nm g
(Note 2) (Note 2)
Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value
nF nC
ns ns C V C/W
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone G-746. *3 : If you use this value, Rth(f-a) should be measured just under the chips.
Aug. 1999
CM300DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
9.5
600
0.5
1.5
2.5
3.5
200
400
600
Tj = 25C
Tj = 25C
102
7 5 3 2
10
12
14
16
18
20
101 0.5
1.5
2.5
3.5
7 5
3 2
102
7 5 3 2
Cies
102
7 5 3 2
101
7 5 3 2
101
7 5 3 2
tr
100
100 1 10
CM300DU-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)
7 5 3 2
103
103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(jc) = 0.13C/ W 3 FWDi part: 2 Per unit base = Rth(jc) = 0.15C/ W 100
7 5 3 2 7 5 3 2 7 5 3 2 3 2
102
7 5 3 2
Irr trr
Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103
101
101
7 5 3 2 7 5 3 2
102
101 1 10
103
18 16 14 12 10 8 6 4 2 0 0
IC = 300A
500
1000
1500
2000
2500
Aug. 1999
This datasheet is downloaded from: www.igbtexpress.com IGBT Express, your specialist and sourcing expert when it comes to finding modules you need .