Escolar Documentos
Profissional Documentos
Cultura Documentos
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32.222011281.5
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(2) 2010
(3) 20111.5 GW
Outline
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(Poly Silicon)IngotWafer
(Solar Cells)
(Module) (System)
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80~90%
CdTe
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(1)
, (c-Si)(waferbased, Bulk-Si)
(Photovoltaic Effect)
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(2)
PN Junction
P-substrate, N+ emitter
emitter, , p-n
bias, (),
p-substrate, n-emitter
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(3)
I-V Curve-
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(4)
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(5)
, I , V
SC
OC
Equivalent Circuit,
ISC
, (IL).
VOC
.
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(6)
Fill Factor (FF)
FF = (area A / area B)
= (Impp * Vmpp) / (ISC * VOC)
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(7)
Series Resistance (RS)
RSVmppRSresistor, FF
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(8)
Shunt Resistance (RSh)()
Shunt resistanceRsh(-cm2)I-V response RSh
ImppresistorFF
Junction robustness,
RSh = V / Ileak
RShRSFFcellRSh
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(9)
Efficiency
Pmax / Pin
= (ISC * VOC * FF) / Pin
= (Impp * Vmpp) / Pin
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(10)
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(11)
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As-cut ()
////type/TTV, etc
Modularized equipment available
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1.
2.
Step-1removal of saw damage
Step-2texture forming
Acidic texturingHF+HNO3, cooled,
Alkaline texturingKOH+IPA, heated,
2KOH + Si + H2O K2SiO3 + 2H2
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(14)
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()
6HF + SiO2 SiH2F6 + 2H2O
emitter, p-n junction
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(16)
SiNx
3SiH4+4NH3Si3N4+12H2
PECVD
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(17)
Inline (PrinterDryer) x 3
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(18)
NP,
(),
Isolation Laser
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(19)
cell
Sun Simulator(1-sun),
()
Inline, Flash-type
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(1)
(1)
(2)
(1)
(2)
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(2)
>17% in production
>18.5% in production
21.6% record efficiency
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Status: Production
BP Solar
Status: Production
Sanyo
(3)
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Metal-Wrap-Through (MWT)
>24% (4 cm2)
20.3% multi-Si (1 cm2)
Status: Laboratory
UNSW, ISE, IMEC
(4)
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Emitter-Wrap-Through
(EWT)
Back-junction (BJ)
PV Applications (1)
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PV Applications (2)
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Power: 527 Ch
Autonomy: 500 Km per charge
0 to 100 kph: 5.20 sec
Max speed: 275 Km/h
Built with a photovoltaic coating, the
surface sends solar energy to the
"Flow Accumulator Energy Storage"
PV Applications (3)
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(1)
US$50
17.0
DC to AC81
30
20082010
Grid Parity
Grid parity
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(2)
US$ 23.79 / Kg
US$ 1.12 / PC
US$ 0.5 / Wp
US$ 0.86 / Wp
US$ 3.64 / Wp
ref:http://www.solarbuzz.com/tw
http://pv.energytrend.com.tw
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(3)
(Grid Parity)
2011
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Renewable Future!
eric.chen@gintech.com.tw
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