LAPT

2SA1860
Application : Audio and General Purpose
(Ta=25C) 2SA1860 100max 100max 150min 50min 2.0max 50typ 400typ V MHz
16.2

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1860 150 150 5 14 3 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz

External Dimensions FM100(TO3PF)

0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 3.30.2 1.6

Unit

A
23.00.3

9.50.2

a b

pF

1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1

3.3

0.8

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

sTypical Switching Characteristics (Common Emitter)

VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 500 IB2 (mA) 500 ton (s) 0.25typ tstg (s) 0.85typ tf (s) 0.2typ

3.35

Weight : Approx 6.5g a. Type No. b. Lot No.

I C V CE Characteristics (Typical)
14 Collector-Emitter Saturation Voltage V C E (s at) (V )
A m mA mA mA 00 500 400 00 3 6

V CE ( sat ) I B Characteristics (Typical)

3

I C V BE Temperature Characteristics (Typical)

14 (V C E =4V)

00

mA

200

mA

Collector Current I C (A)

1 50 m A
10
100 mA

Collector Current I C (A)

10

p)

Tem

p)

se

50mA

C (C

125

0.2

0.4

0.6

0.8

1.0

30

5A

25

I B =20mA

1 Base-Emittor Voltage V B E (V)

C (

Cas

I C =10A

(Ca

ase

eT

Tem

emp

Collector-Emitter Voltage V C E (V)

Base Current I B (A)

(V C E =4V) 200 DC Cur rent Gain h FE DC Cur rent Gain h FE

(V C E =4V) 200 125C

j- a ( C/W)

h FE I C Characteristics (Typical)

h FE I C Temperature Characteristics (Typical)

j-a t Characteristics
3

100

Typ

Transient Thermal Resistance

100

25C 30C

1 0.5

50

50

20 0.02

0.1

0.5

10 14

30 0.02

0.1

0.5

10 14

0.1

10

100 Time t(ms)

1000 2000

Collector Current I C (A)

Collector Current I C (A)

f T I E Characteristics (Typical)
(V C E =12V) 80 40

Safe Operating Area (Single Pulse)

80
1m s

P c T a Derating

Cu t-off Fre quen cy f T (M H Z )

10 60 Collect or Cur ren t I C (A)

10

0m

M aximum Power Dissipa ti on P C (W)

10
s

60

Typ

40

40

1 0.5 Without Heatsink Natural Cooling 0.1

20

20

Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150

0 0.02

0.1

10

0.05 2

Emitter Current I E (A)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(C)

34

3.0

W ith In fin ite he at si nk