Name: Section

ECE310 - Basic Electronics Prelim Exam Date: Rating:

Instructions: Choose the letter of the best answer. Shade the circle which corresponds to the letter of your choice on the answer sheet located on the right side of the questionnaire. Use black or blue pen only. No erasures of any kind are allowed. Any type or erasure, or multiple shaded circles in any item will render that item incorrect. ANSWER SHEET

1. When a diode is forward-biased and the bias voltage is increased, the voltage across the diode (assuming the practical model) will a. Increase b. decrease c. not change d. all of the above 2. When a diode is reversed-biased and the bias voltage is increased, the reverse current (assuming complete model) will a. Increase b. decrease c. not change d. all of the above 3. If the forward current in a diode increased, the diode voltage (assuming the practical model) will a. Increase b. decrease c. not change d. all of the above 4. If the barrier potential of a diode is exceeded, the forward current will a. Increase b. decrease c. not change d. all of the above 5. An atom consist of a. One nucleus and only one electron c.protons, electrons, and neutrons b. One nucleus and one or more electrons d. (b) and (c) 6. The atomic number of silicon is a. 8 b. 2

A
01 02 03 04 05 06 07 08 09 10 11 12

c. 4

d. 14

13 14 15 16 17 18 19 20

7. The valence shell in a silicon atom has the number designation of a. 0 b. 1 c. 2 d. 3 8. A positive ion is formed when a. A valence electron breaks away from the atom a. There are more holes than electrons in the outer orbit a. Two atoms bond together b. An atom gains an extra valence electrons 9. The energy band in which free electron exist is the______ band a. First b. second c. conduction 10. Recombination is when a. An electron falls into a hole a. A positive and negative ion bond together b. A valence electron becomes a conduction electron c. A crystal is formed 11. Each atom in a silicon crystal has a. Four valence electron b. Four conduction electron c. Eight valence electrons, four of its own and four shared d. No valence electrons because all are shared with other atoms 12. In an intrinsic semiconductor, a. there are as many electrons as there are holes b. The free electrons are thermally produced c. There are only holes d. (a) and (b) 13. The process of adding an impurity to an intrinsic semiconductor is called a. Doping b. recombination c. atomic modification d. ionization 14. The purpose of a pentavalent impurity is to a. Reduce the conductivity silicon c. increase the number of free electrons b. Increase the number of holes d. create minority carriers 15. Holes in an n-type semiconductor are a. Minority carriers that are thermally produced b. Minority carriers that are produced by doping

O O O O O O O O O O O O O O O O O O O O

O O O O O O O O O O O O O O O O O O O O

O O O O O O O O O O O O O O O O O O O O

O O O O O O O O O O O O O O O O O O O O

d.valence

c. Majority carriers that are thermally produced d. Majority carriers that are produced by doping 16. The depletion region is created by a. Ionization b. diffusion

c. recombination

d. (a), (b), (c)

17. The term bias means a. The ratio of majority carriers to minority carriers b. The amount of current across a diode c. A dc voltage is applied to control the operation of a device d. None of the above 18. When a diode is forward-biased, a. The only current is hole current b. The only current is electron current c. The only current is produced by majority carriers d. The current is produced by both holes and electrons 19. For a silicon diode, the value of the forward-bias voltage typically a. Must be greater than 0.3V b. Must be greater than 0.7V c. Depends on the width of the depletion region d. Depends on the concentration of majority carriers 20. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to a. The bias battery voltage c. the diode barrier potential b. 0V d. the total circuit voltage