PangKimPeck FYP

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SCHOOL OF SCIENCE AND TECHNOLOGY

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CAPSTONE PROJECT

RF filter for millimeter-wave System-on-
package SOP using Low-Temperature Co-
fired Ceramic LTCC

PREPARED BY : Pang Kim Peck

STUDENT PI : W0604230

SUPERVISOR : DR LUM KUM MENG

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Abstract

This paper presents the ability to produce a compact stripline parallel coupled bandpass filter.
With the inclusion of parasitic elements on a multilayer LTCC substrate, the unique properties
effectively function as a divider in the filter which increased the coupling between adjacent
parallel lines, thus resulting in a compact and low loss filter. The process of fabrication is done
by using four layers of a 50-m LTCC substrate in with a build in filter area of just 1.6 mm by
0.66 mm.

A center frequency of 61.81 GHz is obtained by using a fabricated prototype three-pole bandpass
filter chip. This chip comes with a bandwidth of 6.23 %, and an insertion loss of -0.5 dB that
includes input and output transitions. Most importantly, the return losses are below -20 dB in the
pass.

Being equipped with its smallest size package, this fabricated bandpass filter shall be in the top
records with the highest V-band filters which can be easily integrated into the millimeter-wave
LTCC system-on-package.

The proposed 1.5GHz integrated parallel-coupled bandpass filter (BPF) with parasitic element
(RLC) on a multi-layer LTCC substrate (Dupont 951) is designed using Agilent Advanced
Design System (ADS) Software. The substrate of the band-pass filter is replaced by using FR4
substrate so as to achieve a resonant frequency of 1.5GHz due to budget constraint and limitation
of testing equipment available in the school premise. The fabrication of the band-pass filter
includes using Organic Solderability Preservative (OSP) and Hot Air Solder Leveling (HASL)
finishes.

Using the ideal simulated results comparing with the actual prototypes, the return loss shows a
drastic drop using HASL coating method of -24.085dB and a gain on the insertion loss of -
11.835dB. While using the OSP coating method, the return loss has a slight increase of -2.871dB
as compared to HASL method and a great decrease on the insertion loss of -9.7197dB.

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Acknowledgment

During this full semester year of working on this project, I have consciously and subconsciously
picked up electronic engineering knowledge through lectures, research papers, books and
relevant materials hence enabled me to develop an understanding of the subject from initial to
the final level.

As for here, I would like to take this opportunity to express my deepest appreciation and
heartfelt gratitude to my mentor Dr. Lum Kum Meng, lecturer of SIM University, for his kind
assistance, encouragement and guidance rendered throughout the course of my final year
project. Without his untiring effort, commitment and expertise in this field, this project would
not have been possible.

Lastly, I would also like to thank my family, beloved wife, daughter and friends for their
manual support, strength, and help for everything during these periods of time.

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Contents
Abstract ......................................................................................................................................................... i
Acknowledgment ......................................................................................................................................... ii
Contents ....................................................................................................................................................... iii
Table of Figures ........................................................................................................................................... v
List of Table ................................................................................................................................................ vi
1. Chapter 1 - Introduction ....................................................................................................................... 1
1.1 Problem description ..................................................................................................................... 1
1.2 Overall view of the project .......................................................................................................... 1
1.3 Project Management .................................................................................................................... 2
1.4 Project Planning Gantt Chart .................................................................................................... 6
1.5 Design Process Flow-Charts ....................................................................................................... 7
2. Chapter 2 - Literature Review ................................................................................................................. 8
2.1 Filters .................................................................................................................................................. 8
2.2 System-On-Package (SOP) ............................................................................................................. 11
2.3 LTCC Hardware Component .......................................................................................................... 14
2.4 FR4 material ..................................................................................................................................... 15
2.5 Organic Solderability Preservative (OSP) ...................................................................................... 18
2.6 Hot Air Solder Level (HASL) ......................................................................................................... 19
2.7 SMA connectors ............................................................................................................................... 21
2.8 Microstrip Lines ............................................................................................................................... 22
2.8.1 Microstrip Structure .................................................................................................................. 22
2.8.2 Waves in Microstrips ................................................................................................................ 22
2.8.3 Quasi-TEM Approximation ...................................................................................................... 23
2.8.4 Effective Dielectric Constant and Characteristic Impedance .............................................. 23
i.Guided Wavelength ................................................................................................................. 24
ii.Effect of Strip Thickness ......................................................................................................... 24
2.9 Coupled Lines .................................................................................................................................. 25
2.9.1 Even- and Odd-Mode Capacitances ........................................................................................ 25
2.10 Other types of Microstrip Lines ................................................................................................ 26
2.11 Network Analysis ...................................................................................................................... 26
2.12 Selection of software simulation tool ............................................................................................ 29
2.12.1 Features of ADS Momentum .................................................................................................. 30
3. Chapter 3 - Design Methodology ..................................................................................................... 31
iv

3.1 Microstrip width and length calculation (Validation) ............................................................. 31
3.1.1 LTCC Microstrip width calculation (LineCal) .................................................................... 32
3.1.2 FR4 Microstrip width calculation (LineCal) ....................................................................... 35
3.1.3 LTCC Microstrip length selection calculation ..................................................................... 36
3.1.4 FR4 Microstrip length selection calculation ......................................................................... 37
3.2 Spacing Selection ....................................................................................................................... 38
3.2.1 Coupled strip-line LTCC filter with and without parasitic element .................................... 38
3.2.2 Single strip-line FR4 designed filter with and without parasitic element ........................... 39
4 Chapter 4 - Design Layout On Bandpass Filter ............................................................................... 40
4.1 LTCC BPF Filter with Parasitic Element ................................................................................. 40
4.2 LTCC BPF Filter without Parasitic Element ............................................................................ 40
4.3 Design layout of FR4 BPF Filter without Parasitic Element ................................................. 41
4.4 Design Layout of FR4 Parasitic Element ................................................................................ 41
5 Simulation Results .............................................................................................................................. 42
5.1 Simulation Setup ........................................................................................................................ 42
5.2 Simulation Results ..................................................................................................................... 43
5.2.1 LTCC Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and Center
Frequency ............................................................................................................................................ 44
5.2.2 LTCC Band-Pass filter (with parasitic element) simulated Bandwidth .............................. 45
5.2.3 LTCC (without parasitic element) Insertion Loss, Return Loss and Center Frequency .... 46
5.2.4 LTCC Band-Pass filter (without parasitic element) simulated Bandwidth ......................... 47
5.2.5 FR4 Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and Center
Frequency ............................................................................................................................................ 48
5.2.6 FR4 Band-Pass filter (with parasitic element) simulated Bandwidth ................................. 49
5.2.7 FR4 Band-pass Filter (without parasitic element) Insertion Loss, Return Loss and Center
Frequency ............................................................................................................................................ 50
5.2.8 FR4 Band-Pass filter (without parasitic element) simulated Bandwidth ............................ 51
5.2.9 LTCC Parasitic Element Performance .................................................................................. 52
5.2.10 FR4 Parasitic Element Performance ................................................................................. 53
5.3 Simulation Comparison ............................................................................................................. 54
5.3.1 Design strip-line parallel-coupled LTCC BPF Comparison ................................................ 54
5.3.2 Design strip-line parallel-coupled FR4 BPF Comparison ................................................... 55
6 Chapter 6 - Design Fabrication ......................................................................................................... 56
7 Chapter 7 - Evaluation Tests ............................................................................................................. 59
7.1 Setup on test equipment ............................................................................................................. 59
v

7.2 Actual Test Result ...................................................................................................................... 61
7.2.1 FR4 (HASL) BPF generated results ..................................................................................... 61
7.2.2 FR4 (OSP) BPF generated results ......................................................................................... 62
7.3 Comparison of prototypes and simulated results ..................................................................... 64
8 Chapter 8 - Conclusion ...................................................................................................................... 65
9 Chapter 9 - Suggestion for future works ............................................................................................ 66
10 Reference ........................................................................................................................................ 67
11 Appendix ........................................................................................................................................ 68

Table of Figures

Figure 1: Compact stripline parallel coupled bandpass filter .................................................................... 8
Figure 2: System-On-Package .................................................................................................................. 11
Figure 3: Micro-Strip Structure ................................................................................................................. 22
Figure 4: Cross section of coupled microstrip line ................................................................................... 25
Figure 5: Quasi-TEM modes of a pair of coupled microstrip lines: Even and Odd mode .................... 26
Figure 6: Two-port network showing network variables ......................................................................... 27
Figure 7: Screen shot for ADS lineCal using LTCC material ................................................................. 33
Figure 8: Screen shot for ADS lineCal using FR4 material .................................................................... 35
Figure 9: Parasitic element diagram.......................................................................................................... 38
Figure 10: Final designed layout diagram of BPF filter of LTCC substrate layer at the first and last
sector of the filter top and bottom bonded by parasitic element .............................................................. 40
Figure 11: Final designed BPF filter of LTCC substrate layer and without parasitic element layout
diagram ....................................................................................................................................................... 40
Figure 12: FR4 final design with parasitic element ................................................................................ 41
Figure 13: FR4 final design without parasitic element ............................................................................ 41
Figure 14: shows the simulated values of the Insertion Loss S(1,1): -30.794dB, Return Loss S(2,1): -
0.611dB and Center Frequency freq: 61.81GHz ...................................................................................... 44
Figure 15: LTCC Band-Pass filter (with parasitic element) simulated Bandwidth ................................ 45
Figure 16: Shows the simulated values of the Insertion Loss S(1,1):-29.742dB, Return Loss S(2,1):-
Figure 17: LTCC Band-Pass filter (without parasitic element) final simulated result ........................... 47
Figure 18: Shows the simulated values of the Insertion Loss S(1,1): -45.888dB, Return Loss S(2,1): -
Figure 19: FR4 Band-Pass filter (with parasitic element) final simulated result .................................... 49
vi

Figure 20: Shows the simulated values of the Insertion Loss S(1,1): 25.015dB, Return Loss S(2,1):
Figure 21: FR4 Band-Pass filter (with parasitic element) final simulated result .................................... 51
Figure 22: Arrangement of the 4 layers of FR4 substrate is shown below.56
Figure 23: Design layout versus OSP Coating ......................................................................................... 57
Figure 24: Design layout versus HASL Coating ...................................................................................... 58
Figure 25: Photos of the test equipment a) Spectrum Analyzer b) 2m BNC cable c) BNC to spectrum
analyzer d) 50 SMA connector .............................................................................................................. 59
Figure 26: Diagram shows the SMA connectors are soldier on the 3rd layer of the designed FR4 BPF
........... 60
Figure 27: FR4 (HASL) Test Setup .......................................................................................................... 61
Figure 28: Result on four layer FR4 substrate BPF, 1.59GHz coat with HASL (
11
S
:-21.803dB) ...... 61
21
S
: -17.269dB) ..... 62
Figure 30: Four layer FR4 substrate BPF (OSP) Test Setup ................................................................... 62
Figure 31: Result on four layer FR4 substrate BPF, 1.63GHz coat with OSP (
11
S
: -24.579dB) ......... 63
21
S
: -7.5493dB) ......... 63

List of Table

Table 1: Comparison of Traditional and SOP-based Technology .......................................................... 12
Table 2: FR4 Data Sheet............................................................................................................................ 16
Table 3: Process benefits comparison of OSP and HASL ....................................................................... 20
Table 4: Shows a list of values needed to calculate the width. ................................................................ 31
Table 5: Trend chart for LTCC micro-stripline length ............................................................................ 36
Table 6: Trend chart for FR4 micro-stripline length ................................................................................ 37
Table 7: Trend chart for single strip line LTCC filter with and without parasitic element .................... 38
Table 8: Single Strip-line FR4 designed filter with and without parasitic element ................................ 39
Table 9: LTCC Parasitic Element performance ....................................................................................... 52
Table 10: FR4 characteristics versus width of Parasitic Element Performance ..................................... 53
Table 11: Design strip-line parallel-coupled LTCC BPF comparison .................................................... 54
Table 12: S-parameters versus spacing between coupled lines on the FR4 BPF ................................... 55
Table 13: Comparison of prototypes and simulated results ..................................................................... 64
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1. Chapter 1 - Introduction

In the recent technology policy, strengthening the economy and high demand accelerating the
development of millimeter wave wireless equipment, are solely/highly permitted to the high-
speed wireless applications.

There are numerous of benefits by using low temperature co-fired ceramic (LTCC) millimeter-
wave system-on-package (or system-in-package) approach [1]. It is structural compactness, less
spaces required, low cost fabrication, well affordable, excellent performance in transmission
process and finally high-level of integration with associated parasitic elements.

1.1 Problem description

In this project, an analytical study is conducted on RF filter for millimeter-wave System-on-
package (SOP) using Low-Temperature Co-fired Ceramic (LTCC) demand for high-speed and
high efficiency wireless in the communication system.

By evaluating the performance of both the high-speed RF filter and LTCC technologies, ADS
software is used. The methods of fabrication of the actual prototypes such as HASL and OSP
are implemented. Using such coating methods will help to achieve improved results as
compared to the simulated results due to the tolerance during the fabrication process and the
elimination of oxidation.

Due to the higher cost of LTCC and limitation of the spectrum analyzer range of up to only
3GHz, another material such as FR4 is selected in this study with a bandwidth of 1.5GHz.

1.2 Overall view of the project

There are a total of 8 chapters in this report.

Chapter 1 gives an introduction on the purpose, problem description, overall view of the project.
Mainly highlight the essential elements under the project management.

2

Chapter 2 on Literature Review provides brief introduction on filter, SOP, V-band wireless
system, LTCC technologies, FR4 technologies, OSP, HASL, SMA connector, Microstrip lines
technologies, Network analysis and software simulation tools that are available in the market
today.

Chapter 3 Design Methodology of the microstrip line shows the different design methods of
microstrip line.

Chapter 4 Design Layout on Bandpass filters using two different technologies materials, namely
the LTCC and FR4 material.

Chapter 5 Simulation Result comparisons and conclude on both LTCC and FR4 material.

Chapter 6 Design Fabrication based on FR4 material after evaluating on the simulation results.

Chapter 7 Evaluation Test shall demonstrate the use of the test equipment perform evaluation.

Chapter 8 & 9 shall cover the final conclusion and future works are included to finish the
experiments of this project.

1.3 Project Management

The project tasks are divided into various stages. Below shows the Project Plan of each tasks
and Gantt chart respectively:

Task of entire project is divided into several stages:

Stage 1 - Literature reviews related to LTCC technologies
Stage 2 - Design and modeling of RF circuit (V-band with BPF)
Stage 3- Design and modeling of LTCC circuit geometry
Stage 4 - Test and debug LTCC circuit design with ADS tools
Stage 5 - Design Simulation and demonstration
Stage 6 - Overall project evaluation
Stage 7 - Design Enhancement

3

Detail of elaborate and discuss stages is listed below:

Stage 1: Literature reviews related to LTCC technologies

With good understanding of manufacturing multilayer LTCC engineering technology on
wireless system, it allows the possibility of exploring new technology theory and practically to
obtain an optimal performance, compactness and low cost end product.

Integrated parallel-coupled bandpass filter (BPF) with parasitic element (RLC) on a multi-layer
LTCC substrate is important step in this project.

After comprehend on the extensive advantages, knowledge have been expanded and ability in
apprehend clearly on future advance wireless applications.

Research to be done:

I History and applications of LTCC technology
II V-band BPF wireless system performance and operation specification
III Modeling and demonstrate on software Tools with ADS

4

Stage 2: Design and Modeling of RF circuit (V-band BPF)

To evaluate the design performances, the below parameters are essential elements to incorporate
into the project.

i. Bandwidth selection (V band selected)
ii. Insertion/return loss
iii. Analyze signal pulse
iv. Evaluate signal distorted
v. Signal Fading

Stage 3: Design and modeling on LTCC circuit geometry

Design a LTCC module with highly integrated multi-function circuits, consists of MMICs,
filters and antenna where these design specification serves as input to the next stage of the
model performance. Emphasis shall be focused on the final design to be created.

Stage 4: Test and debug design with ADS tools

With the help of the ADS tools, testing and debug procedure is necessary for development
process so as to ensure that the applicant can perform within its desired specification. In
addition, testing also helps to determine the actual results versus the expected results.

Stage 5: Design Simulation and demonstration

System simulation and demonstration is then carried out to ensure that the module tested is well
coordinated. Final system carries out check on design completeness and robustness.

Stage 6: Overall project evaluation

During this stage of the project, all modules that are evaluated in the former stages are
integrated together as the completed design. Once the system testing is completed, the prototype
is ready for delivery to the users.

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Stage 7: Design Enhancement

In this stage, Design and development process of the LTCC substrate project has finally come to
an end after evaluation. Listed below are some possible recommendations areas that may be use
for the design enhancement listed:

- Improve signal gain on filter
- Minimize insertion/return loss
- Alternative material for design fabrication

6

1.4 Project Planning Gantt Chart
Involves using Gantt Chart to update and track project schedule based on planned task stated
in the Gantt chart and timeline given. Easy tracking compliance of actual work done against
the planned schedule and knowing the progress of each project tasks.

Project Ti tl e
RF fi l ter for mi l l i meter-wave System-on-package SOP usi ng Low-Temperature Co-fi red Cerami c LTCC
Project Team
Pang Ki m Peck 06-Feb-10
Project Supervi or
DR Lum Kum Meng 15-Nov-10
2010
Feb Mar Apr May Jun Jul Aug Sep Oct Nov
1
Stage 1: Li terature revi ews rel ated to LTCC
technol ogi es
2
(i) Review of bandpass filt er t echnology
3
(ii) Hist ory and Evolut ion of LTCC t echnologies
(SOP)
4
(iii) LTCC t echnology on wireless Applicat ions
5
(iv) LTCC Hardware Component s
6
(v) Require V band wireless Syst em Operat ing Range
and Performance
7
(vi) Design and demonst rat e LTCC circuit wit h
Soft ware Tools
8
TMA: Project Proposal
9
Stage 2A: Desi gn and model i ng of fi l ter ci rcui t
10
(i),Achieving a good knowledge on RF circuit and
filt er design
11
(ii),Achieving a good knowledge on BPFs design
12
Stage 2B: Fami l i ari zati on and demonstrati on of
desi gni ng Tool s (ADS)
13
Stage 3: Modi fi es and demonstrate wi th
desi gned fi l ter
14
Stage 4: Testi ng & Debuggi ng others desi gn
fi l ter (Desi gn materi al usi ng LTCC & FR4)
15
Stage 5: Si mul ati on of Desi gn and fabri cate
prototype usi ng FR4 materi al
16
(i) Final product simulat e on t he filt er design (LTCC
& FR4)
17
(ii) Compare and discuss t he simulat ed & measured
result s
18
Stage 6: Project Eval uati on
19
Stage 7: Enhancement of Desi gn
20
Fi nal Report Wri ti ng
21
Revi ew & Amendment of Fi nal Report
22
Presentati on / Demo
Start Date
Target Compl eti on Date
S/N
Task
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1.5 Design Process Flow-Charts
Flow 1: Design Process Flow

Selection on bandwidth range of filter
Selection on material use
Selection on filter and specification
Execute simulation
Achieve
Design
Objective?
Hardware fabrication
Perform comparison between measurement result and simulation
result
Fabricated prototype is
ready for implement
N
O
N
O
Y
E
S
Y
E
S
Achieve
prototype
Objective?
Modification on
design specification
Y
E
S
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2. Chapter 2 - Literature Review
2.1 Filters

Filters have an important role not only in the advance of engineering and science but also in
many modern of RF/microwave applications. Advancement the emerging technology
applications such as wireless communications, continue substantially challenges the
RF/microwave filters. There is a need for control requirements like excellent performance,
minimize the essential in sizes, lighter weight, and lastly the good organization of cost.

Figure 1: Compact stripline parallel coupled bandpass filter

Therefore, strengthening the economy and high demand accelerating the development of
millimeter wave wireless equipment, are solely/highly recommended for the high speed wireless
application. Further to the technologies of novel unit materials and fabrication process.
Whereby, including the technologies like:

i. High-Temperature-Superconductors (HTS)
ii. Low-Temperature Co-fired Ceramics (LTCC)
iii. Monolithic Microwave Integrated Circuit (MMIC)
iv. Micro-electromechanic System (MEMS)

With a good understanding of the RF engineering technologies, enlighten the rapid evolution of
future microstrip and other filter for RF/microwave application.
50 m
50 m
50 m
50 m
9

This project looks into how computer-aided design (CAD) can be of a tool in the full-wave
electromagnetic (EM) simulators, clinically importance of evaluating the revolutionized RF filter
design.
In order the microstrip filters with matching filtering characteristics to obtain optimal
performance in the RF/Microwave Applications. Furthermore, Miniaturization filters
configuration provides the advanced filtering characteristics, with the platform of technologies,
advanced materials and the purpose of software design tools.

The electromagnetic waves compose with frequencies ranging from 300 MHz up to 300 GHz is
known by the term of microwaves or millimeter waves due to the wavelengths range. For the
applications likes communications, radar, navigation, medical instrumentation, and many others
parts of the industrial.

Looking at the research and development, choice of selecting the particular components always
relied on the market requirement. Both fabrication techniques and operating frequency is the
main dependant of designing the filters.
A short and briefly described as follows:
Firstly, it is a must to understand the designer points of view. Look into advantages like
miniaturization in size, low cost, robust and wide-band or various in band characteristics. Hence,
the design should always comprise of size reduction, integrated element like filters etc,
developing the realization of monolithic microwave integrated circuits (MMIC). With the
emerging fabrication techniques, implementing of the lumped elements will finally allow even
comprehensive wavelength of millimeter-wave.

Things ought to consider when lumped elements are present in the microwave frequencies: the
overall length of the lumped elements, the inductor or capacitor must present only a smaller
fraction in particular wavelength.

In most cases, it is difficult to truly realize the lumped elements, due to other parasitics
integration. Forming shunt capacitance again on the ground plane which will considerably
affecting the performance of the respective inductor.
10

In design stage, lumped elements are over the entire operating frequencies band. By using the
full-wave EM simulation is able to into account of the all the parasitic and various kinds of
effects caused.

Choice of filters, band-pass filter (BPF) consists of parasitic elements is strongly integrated on
multilayer strongly bounded LTCC substrate provides compactness and performance required.
Conventional integrated band-pass filter (BPF) structural huge, implement in complex transitions
furthermore is not fable to cost.

Planar Type Filters operate with huge patch resonators therefore the structure of build up area is
eventually huge. The formation of the substrates is normally thick and emphasize on design procedure
is surely complex [2],[7].

Waveguide Type Filters construct with many vias and via fences also require huge areas and have
level of difficulty connecting the microstrip lines or coplanar waveguides [3-6].

The function of the RF filter is a device that allows attenuation and transmission of the selected range
of frequencies. RF filters likes high pass, low pass, band pass and band reject filter and many other
filters are commonly used in the industrial.

11

2.2 System-On-Package (SOP)
The technologies of SOP have been widely use in almost two decades for the miniaturization
technology, support most of the electronic and bio-systems of feature from a thousand to a
million. Promoting the invention of System Integration Law is well known the Second Law of
Electronics working on the miniaturization of the whole system.
Potential of integrated circuits also known as Moores Law plays an important role in the
miniature portion of the system. In order to facilitate the miniaturization of SOP system and
further allow the more system function implementation enables. Therefore, entail the provision
of SOP in the new generation in electronics communication, bio, healthcare and automotive
industries.

Figure 2: System-On-Package
R
F
SYS-ON-CHIP (SOC)
BIO-SENSORS
THERMAL SOP
STACKED ICs
& PACKAGES
(SIP)
MIXED SIGNAL SOP
DESIGN
SOP ELECTRICAL
TEST
MIXED SIGNAL
RELIABILTY
RF
12

In todays market economics and microsystem technologies correspond to the primary drivers of
information age. Size of microelectronics with integrated technology of giga-scale, wireless
communication system devices in gigabit, terabit optoelectronics, even in motorization from
micro to nano size, and many others medical implants system too, which are all integrated
technology idea of leading to the ultra miniaturization formation.
The traditionally separated areas of between System-on-package (SOP) and the System-on-chip
(SOC) technology, one is at the integrated circuit (IC) stage, second stacked ICs and lastly is
allot at System-in-package (SIP) stage, despite the emphasis on manufacturing stacked of ICs
and packages. Therefore, system technology of SOP consists of the SOC and SIP thermal feature
and sometime even inclusive of the batteries too. Thus, SOP resulting in the interaction, needs
and device emerging in miniaturized into a solo system package.
Multi-layer ceramic and organic-based SOP implementation are capable of overcoming this
limitation by integrating components as part of the module package that would have otherwise
been acquired in discrete form. On-package components not only miniaturize the module, but
also eliminate or minimize the need for discrete components and thereby reduce the assembly
time and cost.
Table 1: Comparison of Traditional and SOP-based Technology
Building
Blocks

Traditional Technology

SOP-based
Technology

Power sources

DC adapter, power cables,
power socket

Embedded thin-film
batteries micro-fluidic
batteries

Integrated circuits

Logic, memory, graphics,
control, and other ICs,
SOCs

Embedded and thinned ICs
in substrate

Stacked ICs in 3D/
Packages ICs in 3D

SIP with wire bond and flip
chip

Wire-bonded and flip-chip
SIPs. Through silicon via
(TSV) SIPs and substrates

Packages or substrates

Multilayer organic
substrates

Multilayer organic and
silicon substrates with TSVs

13

Passive components

Discrete passive
components on printed
circuit board (PSB)

Thin-film embedded
passives in organics, silicon
wafer and Si substrate

Heat removal elements

Bulky heat sinks and heat
spreaders. Bulky fans for
convection cooling

Advanced nano-thermal
interface materials, nano-
heat sinks and heat
spreaders, thin-film
thermoelectric coolers,
micro-fluidic channel based
heat exchangers

System board

PCB-based motherboard

Package and PCB are
merged into the SOP
substrate
Connectors/ sockets

USB port, serial port,
parallel port, slots (for dual
in-line memory modules
(DIMM) and expansion
cards)

Ultrahigh density I/O
interfaces

Sensors

Discrete sensors on PCB

Integrated nano-sensors in
IC and SOP substrate

IC-to -package
interconnections

Flip chip, wire bond

Ultra miniaturized nano-
scale interconnections

Packages wiring

Coarse wiring Line
width:25m
Pitch:75m

Ultrafine pitch, wiring in
low-loss dielectrics Line
width: 2-5m
Pitch: 10-20m

Package-to board
interconnects

Ball grid array (BGA)
bumps, tape automated
bonding (TAB)

None

Board wiring

Very coarse-pitched wiring
(line width/ spacing:100-
200m)

No PCB wiring. Package
and PCB are merged into the
SOP substrate with ultrafine
pitch wiring

14

V-band Wireless System
To overcome the achievement of high transmission rates and wider bandwidths, choice of selecting
the appropriate band selection is essentially important. By selecting V- band will eventually provide
the above requirements. Operating range of V-band is (50 GHz to 75GHz) whereby is way above the
1Gbps.

2.3 LTCC Hardware Component

Material of Low Temperature Co-fired Ceramic (LTCC) is an acronym made of glass ceramic
composite. Specimens structural is pre-processing with multi-layers green-sheet laminated with
required circuits printed. Each laminated layer thickness come with a minimum thickness of 50m
(equivalent to 1.8 mils) is possible. Aim of impedance control and excellent packaging solution
liability is able to command in an LTCC substrate by configuring with the Cavities process. Due to its
unique performance capability, the high-frequency RF circuitry and microwave applications are
widely used in wireless and satellite industries.

The laminates were stacked in various composite (likes resister, capacitors, inductors and passive
components), with single fired process. Create conduction between laminated layers, were subject to
inductive and capacitive, by using the element with strip-line interconnects and ground planes. Those
Passive components embedded between LTCC multi-layers, achieve interconnecting length
minimization, improving, to provide dense integration and structural robustness, and less circuit
geometry is obtained. As the result, relevant levels of quality and high reliability are been resolved.

Highly conductive material (Silver, copper and gold) is used, because of the firing temperature <
1000C, provide best in electrical conductivity and highest Q factor [8]. It was also observed that
LTCC filter dimensions are much smaller, much higher frequency performance as compare to the
ideal discrete component. Manufacture of LTCC substrates by using the co-fired technique.

Computer-aided with unique design techniques for schematics circuitry obtained before specimens
fabricated. An electromagnetic (EM) simulation tool is able to perform the physical layout realization
need.

15

Key Advantages of LTCC technology:
Excellent High Frequency Performance

From the above table shows that dielectric constant is constantly stable for over higher frequency
range.
Moisture free
Excellent in providing passive components (RLC) consists of Resistance, inductance and
capacitance
Provide with high laminated Density of interconnection
Cost of silver is low and easy available
Materialize excellent in thermal management (co-fired)
TCE Closely matches Si , GaAs and Sia (company with others compounds too)
Brazed on Components
Tight and compact packaging
Provide outstanding reliability in present market proven

2.4 FR4 material

Development of FR4 material is made up of various combination sheets of Prepreg, which the
structural in sandwiched plated constructed of fiber glass matting. Which it infuse with the epoxy
resin. The standard thickness of the circuit board is normally 1.6mm, comprising of 8 layers of
Prepreg and including the outer copper layers. The laminate layer of Prepreg and outer Ultra thin
copper foil are pile up together, and forming the final laminate by the matter of placing all the
layer in large press and follow by bonding.
Generally, the copper foil is fabricated, with the help of rotating stainless steel drum is slowly
dipped in the solution producing thin copper plating. As the steel drum turns, offer a great
distinctive advantages allowing the drum electroplate with a thin layer of copper. When the
plated portion leaves the solution, thus lifting the copper plate stripped off from the drum.
Frequency Range in G-
Hz
3 GHz (951) 40GHz (943)
Loss Tangent 0.002 0.002
Dielectric Constant 7.7 7.4
16

The unique of glass cloth is perfectly made up of very fine weaving strands of fiber glass yarn
collectively. This yarn structure in the form of many small and fine threads of glass bonded as
one. Major composite material on cloth strengthens from the toughness on the laminated glass.
Composite material of bisphenol-A and ethylene chloronhydrin are orientation of layer bonded
together called the epoxy resin. Therefore, it is hard for the two composite to separate during
high temperature and powerful oxidizing solution.
Table 2: FR4 Data Sheet
Test/ Specification FR4 Laminate Typical Values
Thermal Stress, Solder bath 288 deg.C >60
Dimensional Stability, E-2/150
< 0.04% Warp/fill
< 1.00% Bow / Twist
Flammability, Classification UL94 V0
Water Absorption E-1 / 105 0.10%
Peel Strength After Thermal Street 11 lb. in After 10s /288 Deg.C
Flexural Strength
100,000 lbf / in2 Lengthwise
75,000 lbf /in2 Crosswise
Resistivity After Damp Heat Volume 10^8 M ohms cm
Resistivity After Damp Heat Surface 10^8 M ohms
Dielectric Breakdown. Parallel to laminate > 60KV
Dielectric Constant @ 1MHz 4.7
Dissipation Factor @ 1 MHz 0.014
Q-Resonance @ 1 MHz > 75
17

Q-Resonance @ 50 MHz > 95
Arc Resistance 125 s
Glass Transition Temperature 135 Deg. C
Temperature Index 130 Deg. C
A few other relevant facts from other sources
Specific Gravity 1.8 1.9
Rockwell Hardness (M scale) 110

18

2.5 Organic Solderability Preservative (OSP)

OSP are the most widely used coating material in the lead-free soldering, due to the excellent
solderability performances, easy processing method as well as its low cost. An anti-oxidant film
applies on the exposed copper surfaces that established a reaction with copper producing a form
of organometallic layer known as the Organic Solderability Preservative. The coating form
invisible capability, with a thickness of 0.1 to 0.5 microns thin layer on the copper surface. OSP
shelf life could last for six months as compare with other solder masks.
The flow diagram below presents the sequence of steps of the typical OSP process. A brief
description of each process steps are as the following diagram flow:

Flow 2: OSP Process Flow

Solders mask residues and surface oil on the
exposed copper surfaces is remove with acidic
cleaner
Etching removes any contaminants and chemically
roughen copper surface with microetch solution
Eliminate excess solution and limit oxidation
configuration on the copper surface
Chemically bonds protective layers, forming a
solderability preservative organometallic layer on the
copper surface
Treating the OSP coat with warm-air and at the same
times remove unwanted residual moisture from the
respective board
Help to even coating across the surface of the entire
Printed Wired Board (PWB)
ACID CLEANING
MICROETCH
AIR KNIFE
OSP
AIR KNIFE

DRY

19

2.6 Hot Air Solder Level (HASL)

A process step during manufacturing of HASL consists of the following, pre-clean, fluxing, hot
air leveling, and a post-clean.
1. Pre-cleaning is simultaneously done with a micro-etch
2. Fluxes comprise with the following function:
- Allowing a thin layer of oxidation forming on the preclean surface act as a layer of
protective function.
- Heat dissipation during solder immersion.
- It enhances oxidation protection during the process of HASL.
In order to achieve balance flux, that liaise between high and lower viscosity fluxes meaning
better the protection and higher heat transfer. With more effective oxidation protection
collaborator with higher viscosity flux and much even solder leveling. But bad points is, it can
reduce overall heat transfer and require longer dwell time too.
The circuit board rapidly past jets of hot air. Reasons to adopting this procedure allow solder to
coat on the exposed copper and solder-free for the masked areas.
In this stage, all the embedded impurities are easily remove by using the method of drossing,
with the help of the hot air leveler. Final stage is to pre-clean using the acid solution
Flow 3: HASL Process Flow

Solder
Air Knife
Post-clean
Dry
Preclean
Flux
20

Table 3: Process benefits comparison of OSP and HASL

Description OSP HASL
Surface Thickness
Uniformity
Good Poor
Pad Coplanarity Good Poor
Finished Hole Size
Uniformity
Good Poor
Plated Hole Size
Compensation (design)
Not Required 0.0002-0.0003
in oversized
Fine Pitch Quality
(25mils or less)
Good Poor
Surface Contrast
(Assembly)
Good Poor
Solder Volume Predictable
(design for)
Varies
SIR, bare board Excellent Acceptable
Environmental Hazard Low High
Personnel Exposure
(safety issue)
Low High
Gold Contact Masking Not required Required
Thermal Stress (PCB
manufacturing process)
No Yes
Manufacturing Cost Low High
Equipment Maintenance
Cost
Low High
Rework ability Easy Difficult
Surface Finish
Durability
Fragile Robust
21

2.7 SMA connectors

Namely, SubMiniature Version A in short known as SMA connectors, it offers great distinctive
advantages providing continuous DC electrical performance conjunction with flexible cables
with extension to 12.4GHz.

The SMA connectors coupling appearance is screw-type. Moreover, the most notable being in
impedance constant at 50 ohms and low reflection performance during the broad band condition.

Thus, with the plus point of properties, low voltage standing wave ratio (VSWR) and signal
attenuation is minimal, that make SMA connectors a most popular core in the microwave
community.

22

2.8 Microstrip Lines
2.8.1 Microstrip Structure

Major structure of a microstrip consists of the following subsystem:

1. Width of the conducting microstrip, W
2. Thickness of the microstrip, t, which located just on top of the dielectric substrate
3. Relative dielectric constant
r
c , with the thickness height h
4. Lastly, the dielectric substrate is connected to the ground plane

Figure 3: Micro-Strip Structure
2.8.2 Waves in Microstrips

The microstrip is made up of inhomogeneous physical structure that consists of two media: the
dielectric below and air located above the structure.

Due to the inhomogeneous formation, it caused the microstrip not in the favour to the pure TEM
wave. Furthermore, the transverse components will only present in the pure TEM wave and also
derive as propagation velocity dependent on material properties represent by the permeability
o
c and
permittivity
r
c .

Air and dielectric substrate play an importance role in the guided-wave media, eliminating the
magnetic and electric fields in the microstrip line waves. Moreover, propagation velocities not just
depend on the material properties but also the microstrip physical dimension.
Ground
plane
W

h
h

h
r
c
r

h
Conducting
Strip
Dielectric
substrate
t
W
h
t
r
c
23

2.8.3 Quasi-TEM Approximation

The of the longitudinal components of the fields for the dominant mode of a microstrip line may be
ignored due to the smaller field area comparing to the transverse components.

With that, not only the dominant mode act like the TEM mode, even the TEM transmission line
theory is applicable to the microstrip line.

For quasi-TEM approximation, it can be applied over almost all the operating frequency ranges of
microstrip

2.8.4 Effective Dielectric Constant and Characteristic Impedance

By using in the quasi-TEM approximation, corresponding to the effective material of dielectric
permittivity between homogeneous and inhomogeneous of dielectric-air media of the microstrip.
In quasi-static analysis [9], obtaining the characteristics or impedance
c
Z

and effective dielectric
constant
re
c

in microstrip are the most important and more efficient parameters in process of
microstrips transmission. In addition, quasi-static analysis provides the systematic mode of
propagation theory of a microstrip condition with the pure TEM. Connected to microstrips
parameters are then determined within the two different requirements of capacitance values are
shown below:

For very thin conductors (ie, t 0), the closed-form expressions that provide accuracy better than
one percent are [10] as follows.

For : 1 s
h
W

( ) a
h
W
W
h
r r
re
2 . 4 1 04 . 0 12 1
2
1
2
1
2 5 . 0
(
(
|
.
|
\
|
+
|
.
|
\
|
+
+
+
=

c c
c
( ) b
h
W
W
h
In Z
re
c
2 . 4 25 . 0
8
2
|
.
|
\
|
+ =
c t
q

24

Where O = t q 120 is the wave impedance in free space.

For : 1 >
h
W

( ) a
W
h
r r
re
3 . 4 12 1
2
1
2
1
5 . 0
|
.
|
\
|
+
+
+
=
c c
c

( ) b
h
W
In
h
W
Z
re
c
3 . 4 444 . 1 677 . 0 393 . 1
1
(
|
.
|
\
|
+ + + =
c
q

i. Guided Wavelength

Furthermore, for a given microstrip, and value of the effective dielectric constant is able to identify,
make easy for calculation of the guided wavelength implementing on the quasi-TEM mode on the
design microstrip is shown as below:
Give the
0
been the most accuracy for free space wavelength at the respective operation frequency,
. f

Where,
f
c
o
=

More conveniently, to facilitate the guided wavelength result in micrometer, with the help of the
respective frequency is given in gigahertz (GHz),

re
g
c
0
=

re
g
GHz f
c
c
) (
=

where c is the velocity of light s m c / 10 3
8
- ~ in free space.
Therefore, for Quarter wavelength, use
4
g
l

= ,
If the design is using a half-wavelength microstrip, then the formula will be using
2
g
l

= ,
Therefore, note that guided wavelength play a very important step in designing the microstrip filters.
ii. Effect of Strip Thickness

Usually, effect on conducting strip thickness t is not taken into consideration, due to the thickness
dimension of the thin film conducting layer is very small. In practice, this is often neglected.
25

2.9 Coupled Lines

In the designing stage, using EM simulation in the form of Coupled microstrip lines, are widely used
for implementing microstrip filters. The reason for cross section of the coupled microstrip lines are
illustrates in this portion. With the width W are placed in parallel, and through a separation, S
configuration are within the recommend limits as shown in Figure 4. While, relatively result can be
achieved for the two quasi-TEM modes.

Figure 4: Cross section of coupled microstrip line

2.9.1 Even- and Odd-Mode Capacitances

There are two main capacitances, namely the odd mode and even mode. i.e., for an even-mode
excitation, both microstrip line are serve in the identical voltage potentials, under this conditions,
even mode excitation carry both the positive charges moderately.

As Figure 5 shows the mode of the odd event, odd mode excitation establishes an opposite voltage
potential between the two lines up microstrip line or in others word the symmetric plane know as the
electric wall act as a charge, where the sign are in opposite.
Normally, both the odd and even modes will excite at one goal, and the operating propagation in
phase velocities is different, since the desirable of the TEM is not pure. Furthermore, that both modes
are having a different permittivities experience too. Effective of the dielectric constants and the
characteristic impedance are well characterized in the coupled microstrip lines between the odd and
even modes [11].

r
c
S
W W
h
W W
S
26

Figure 5: Quasi-TEM modes of a pair of coupled microstrip lines: Even and Odd mode
2.10 Other types of Microstrip Lines

Implementing other types of microstrip line, are normally unclipped for filter applications [12], is a
method of realizing all kind of different filters, impedance in wider range is barely achievable in the
form of lowpass, highpass and even the cascaded formation of wider band bandpass filters.
Understanding the concern of ultra thin dielectric substrates on the low dielectric constant, by this
method dielectric loss will be further reduced. This makes the plus points for developing filters,
potential in micro-machined filters in the unique capabilities for millimeter-wave applications.

2.11 Network Analysis

Filter network plays an important part in microwave engineering industrial and RF sector. The
networks are capable to combine/detach signal and discard/select in numerous frequencies in the
RF/microwave systems and equipment.

Microwave frequencies cannot be measured directly using voltmeters and ammeters. Thus, both
voltage and current are not important role at microwave frequencies for measuring the level of
electrical excitation of a network.

However, in order to optimize the usage of low-frequency network concepts, the operation of a
microwave network as filter is best described in terms of voltages, currents and impedances
values.

Magnetic wall
+

+

+
+

+

+

+

+
+ + + + + +
f
C

p
C

`
f
C

f
C

p
C

`
f
C

ga
C
ga
C
Electric wall

+

+

+

+ + +
- - -
f
C

f
C

p
C

p
C

gd
C
gd
C
27

Reflection coefficient,
1
1
11
a
b
S =
1
1 Re
port at power Incident
port at power flected
=

Transmission coefficient,
1
2
21
a
b
S =
1
2
port at power Incident
port at power d Transmitte
=

Figure 6: Two-port network showing network variables

For two ports network are two by two as shown in Figure 6.
Scattering matrix [13] is also known as S parameters, denotes as [S] for some, also is a set of
matrix formation. The S parameters are in general complex as:
|
|
.
|
\
|
22 12
21 11
S S
S S

Parameter of
11
S and
22
S are both known as the reflection coefficients. As well as, the operating
Parameter of
12
S and
21
S are representing the parameter of transmission coefficients.

Below shown the result designed filter S-parameter generation from ADS momentum.
Achieve a good result on reflection coefficient, with
11
S gain less than -20dB of the filters.
21
S Known as the power efficiency of the filter, also require power loss to be less than -10dB.

1
a
1
b
2
a
2
b
Two- port
Network
28

Intrinsic impedance

Intrinsic impedance, q is been the ratio relation between electric and magnetic field components
respectively. Therefore, is generally known as the Transverse Electromagnetic (TEM) of the RF
studies process.

7
0
10 4 ,

= t ty Permeabili Absolute
12
0
10 85 . 8 ,

= ty Permittivi Absolute c
Field Electric E
x
,
Field Magnetic H
y
,
1 : =
r
r
Note
c
in Free Space propagation

r
r
r
r
y
x
H
E
pedance Intrinsic
c
t
c c

q 120 , Im
0
0
~ = =

29

2.12 Selection of software simulation tool

Selection of software give a detail account of the project undertake from the given synopsis stage
to its completion in the form of a standalone simulation application. As simulation software
selection is part of the highlight in this project, also outlines the various software development
tools available in the market as well as the pros and cons of each Integrated Development
Environment (IDE).
Knowing the platform of selecting the important key points for user friendly and powerful
software tools, as eventually, enlightening the gauging process performance on the designed
antenna. Furthermore, providing the controllability for modifying different various parameters
antenna, such as:
a) Dimension
b) Relative permittivity
c) Different way of defining layers, etc. to achieve fine tuning and optimal design
performance.

In addition, simulation tools is able to perform as expectation, consists of S-parameter, radiation
pattern, visualization on the various antenna design views will be consider provided in the
simulation software product environment, in this project the ADS (Agilent, Advance Design
Software) and HFSS (Ansoft, High Frequency Structural Simulator) are well considered.

HFSS is performing on the simulation of 3D full wave electromagnetic field, which requires a
high computerize processing power and its license fee is far expensive as compare with ADS.
Even though ADS provide only two and half waves simulations, it easily comes with free
evaluation copy and required a low processing power. With all these advantages of ADS, it
stands out to be my choice of software tools for this project.

30

2.12.1 Features of ADS Momentum

In the modern engineering society, simulation tools provide designers with comprehensive
simulation requirement platform whereby ADS is able to enlighten the process of design
performance. Thus, in order to analysis an efficient RF designs.
Below are some capable steps functions on Momentum key:

- Evaluation the Greens calculation of the design substrate
- Performing the patterns of Meshing on the respective signal layers
- Input source of information to MOM, perform the matrix equation calculation
- In this application of S-parameters, which allow calibration and de-embedding
- Adaptive of Frequency sampling selection able to enhance the order modeling.

31

3. Chapter 3 - Design Methodology

3.1 Microstrip width and length calculation (Validation)

In order to validate LineCal results, a set of formulas are applied to calculate the width of Microstrip.

Table 4: Shows a list of values needed to calculate the width.

Material Symbols LTCC FR4
Relative permittivity
r
c

7.7 4.7
Microstrip thickness/width t

17 microns 17 microns
Substrate height h

50 microns 1600 microns
Intrinsic Impedance
q

120 120

Calculation for LTCC material

Effective dielectric constant,
( )
( )
28 . 5
93 . 0 35 . 4
13 35 . 3 35 . 4
12 1 35 . 3 35 . 4
50
50
12 1
2
1 7 . 7
2
1 7 . 7
12 1
2
1
2
1
5 . 0
5 . 0
5 . 0
5 . 0
=
+ =
+ =
+ + =
|
.
|
\
|
+
+
+
=
|
.
|
\
|
+
+
+
=
re
r r
re
W
h
c
c c
c

. 1
1
50
50
1 /
to equal is value Therefore
h
W
h W

>
32

Microstrip impedance,

{ }
{ }
O ~
O =
=
+ + =
)
`
|
.
|
\
|
+ + + =
)
`
|
.
|
\
|
+ + + =
50
69 . 54
3 07 . 164
6 . 0 393 . 1 1
28 . 5
120
444 . 1
50
50
677 . 0 393 . 1
50
50
28 . 5
120
444 . 1 677 . 0 393 . 1
1
1
1
1
t
t
c
q
In
h
W
In
h
W
Z
re
c

Since both LineCal and calculation derived Micro-strip impedance to be 50 when Micro-strip
width is 50m, LineCal result has been successfully validated.

The length of the Microstrip Feed can be calculated as follows:

re
g
GHz f
c
c
) (
=
28 . 5 10 60
10 3
9
8

=
g

97 . 2175 =
g

4
g
l

= ,

4
97 . 2175
= l

microns l 544 =

3.1.1 LTCC Microstrip width calculation (LineCal)

Figure 7 is a screenshot captured of LineCal from ADS tools. LineCal is an integrated function has the
ability to create pre-determine physical width parameter.
Therefore, further assists designers in designing the Microstrip line. Whereby, SMA connector is O 50

on the source feed design and Microstrip impedance also is set at O 50 too.
33

Figure 7: Screen shot for ADS lineCal using LTCC material

ADS LineCal obtains Microstrip line length and width is approximate 50m and 568m
respectively. The yellow arrow pointing to the cells indicates the input substrate parameters and
component parameters values required for calculating the length and width of the micro-strip line.

Calculation for FR4 material

. 1
8125 . 1
1600
2900
1 /
than greater is value Therefore
h
W
h W

>
Micro-strip line
approximate
Width is 50m and
length is 568m

34

Effective dielectric constant,
( ) ( )
( )
52 . 3
67 . 0 85 . 2
62 . 7 85 . 1 85 . 2
55 . 0 12 1 85 . 1 85 . 2
2900
1600
12 1
2
1 7 . 4
2
1 7 . 4
12 1
2
1
2
1
5 . 0
5 . 0
5 . 0
5 . 0
=
+ =
+ =
+ + =
|
.
|
\
|
+
+
+
=
|
.
|
\
|
+
+
+
=
re
r r
re
W
h
c
c c
c

Microstrip impedance,
{ }
{ }
O ~
O =
=
+ + =
)
`
|
.
|
\
|
+ + + =
)
`
|
.
|
\
|
+ + + =
50
235 . 50
4 94 . 200
79 . 0 393 . 1 8125 . 1
52 . 3
377
444 . 1
1600
2900
677 . 0 393 . 1
1600
2900
52 . 3
120
444 . 1 677 . 0 393 . 1
1
1
1
1
In
h
W
In
h
W
Z
re
c
t
c
q

Since both LineCal and calculation derived Microstrip impedance to be 50 when Microstrip width
is 2900m, LineCal result has been successfully validated.

The length of the Micro-strip Feed can be calculated as follows:

re
g
GHz f
c
c
) (
=
52 . 3 10 5 . 1
10 3
9
8

=
g

microns
g
106600 =
4
g
l

= ,

4
106600
= l
microns l 26650 =

35

3.1.2 FR4 Microstrip width calculation (LineCal)

Figure 8 is a screenshot captured of LineCal from ADS tools. LineCal is an integrate function has the
ability to create pre-determine physical width parameter.
Therefore, further assists designers in designing the Microstrip line. Whereby, SMA connector is O 50

on the source feed design and Microstrip impedance also is set at O 50 too.

Figure 8: Screen shot for ADS lineCal using FR4 material

ADS LineCal obtains Microstrip line length and width is approximate 2900m and 26584m
respectively. The yellow arrow pointing to the cells indicates the input substrate parameters and
component parameters values required for calculating the length and width of the Micro-strip line.

Micro-strip line
approximate
Width is 2900m and
length is 26584m

36

3.1.3 LTCC Microstrip length selection calculation

Table 5: Trend chart for LTCC micro-stripline length

With the generated length: 568m from LineCal as a guide, various different lengths are tested
in the simulation as shown above Table 5. In this project, the required V-band is around 50 GHz
to 75 GHz and the required length needed has to be as compact as 568m or lesser with a
reasonable insertion and return loss.
Both LTCC micro-stripline with and without parasitic length at 400m laid on the V-band range.
Besides that the insertion loss: -3.69 and return loss: -2.461 are both very near to the rest of the
different length designs. Thus, the final LTCC filter length is selected as 400m.

-10
0
10
20
30
40
50
60
70
80
90
300 350 400 450 500 550 600
S
-
p
a
r
a
m
e
t
e
r
s

(
d
B
)

a
n
d

f
e
r
q
u
e
n
c
y

(
G
H
z
)
LTCC, micro-stripline length (m)
Frequency
Frequency PE
S11
S21
37

3.1.4 FR4 Microstrip length selection calculation

Table 6: Trend chart for FR4 micro-stripline length

With the generated length: 26584m from LineCal as a guide, various different lengths are tested
in the simulation as shown above Table 6. Due to the limitation of analyzer used in this project,
the targeted frequency is around 1.5 GHz and the required length needed has to be as compact as
26584m or lesser with a reasonable insertion and return loss.
Both FR4 micro-stripline with and without parasitic length at 21500m laid on the 1.5GHz
range. Besides that the insertion loss: -4.959 and return loss: -2.141 are both very near to the rest
of the different length designs. Thus, the final FR4 filter length is selected as 21500m.

-6
-5
-4
-3
-2
-1
0
1
2
3
S
-
p
a
r
a
m
e
t
e
r
s

(
d
B
)

a
n
d

F
r
e
q
u
e
n
c
y

(
G
H
z
)
FR4, micro-stripline length (m)
Frequency
Frequency PE
S11
S21
38

3.2 Spacing Selection

3.2.1 Coupled strip-line LTCC filter with and without parasitic element

Table 7: Trend chart for single strip line LTCC filter with and without parasitic element

Figure 9: Parasitic element diagram

A signal line is formed on the middle layer and the parasitic elements are patterned above and below
the middle layer. The parasitic elements only cover the first and last filter sections because these
sections are the dominant cause of the process variation sensitivity.

-16
-14
-12
-10
-8
-6
-4
-2
0
10 20 30 40 50 60 70 80 90 100
S
2
1
I
n
s
e
r
t
i
o
n

l
o
s
s

(
d
B
)
Spacing, s (m)
LTCC, S
21
versus spacing between coupled line with
and without parasitic elements
Without parasitic element
With parasitic element
39

Above chart shows the characteristic of the coupled stripline with the parasitic elements versus
spacing between adjacent lines. Above diagram show the port configuration. Line length and line
width are 400m and 50m, respectively. With parasitic element wide is 200 m. The simulation
was performed using a commercial EM simulation. The red square and blue diamond plot coupled
line characteristics with and without parasitic elements, respectively. The increase in insertion loss of
the coupled line with parasitic elements is clearly smaller than that of the normal coupled line, when
the spacing increases. Thus, the final LTCC filter spacing selected is 10m

3.2.2 Single strip-line FR4 designed filter with and without parasitic element

Table 8: Single Strip-line FR4 designed filter with and without parasitic element

Above chart shows the characteristic of FR4 coupled stripline with the parasitic elements versus
spacing between adjacent lines. Above diagram show the port configuration. Line length and line
width are 21500m by2900m, respectively. The parasitic element is 21500m by 10000 m width.
The simulation was performed using a system analyzer. The red square and blue diamond plot
coupled line characteristics with and without parasitic elements, respectively. The increase in
insertion loss of the coupled line with parasitic elements is clearly smaller than that of the normal
coupled line, when the spacing increases. This result indicates that the coupled stripline has low
sensitivity to spacing variation. Thus, the final FR4 filter spacing selected is 400m.

-9
-8
-7
-6
-5
-4
-3
-2
-1
0
S
2
1
(
m
)
FR4, Spacing, S(m)
S21, FR4, Without
parasitic element
S21, FR4, With parasitic
element
40

4 Chapter 4 - Design Layout On Bandpass Filter

4.1 LTCC BPF Filter with Parasitic Element

Below shown the final designed layout diagram of the LTCC with parasitic element after selecting
the right values of length, width and spacing:

Figure 10: Final designed layout diagram of BPF filter of LTCC substrate layer at the first
and last sector of the filter top and bottom bonded by parasitic element

4.2 LTCC BPF Filter without Parasitic Element

Below shown the final designed layout diagram of the LTCC without parasitic element after
selecting the right values of length, width and spacing:

Figure 11: Final designed BPF filter of LTCC substrate layer and without parasitic
element layout diagram

41

4.3 Design Layout of FR4 BPF filter without Parasitic Element

Below shown the final designed layout diagram of the FR4 with parasitic element after selecting the
right values of length, width and spacing:

Figure 12: FR4 final design without parasitic element

4.4 Design Layout of Parasitic Element

Below shown the final designed layout diagram of the FR4 without parasitic element after selecting
the right values of length, width and spacing:

Figure 13: FR4 final design parasitic element

42

5 Chapter 5 - Simulation Results

5.1 Simulation Setup

The following steps are carried out in the process of deviating the spacing requirement:

Step 1: Modify the substrate by entering a thickness of 50m and Permitivity (
r
c ): Real is 7.7 and
loss tangent is 0.002.

Insert the
Thickness
Insert the
Real Value
Insert Loss
Tangent
43

.
Step 2: Insert the substrate layer and layout layer conductivity under metallization layer setting
before processing to simulation setting

Step 3: Insert the simulation settings on the substrate layer as shown above
Stop
Frequency
Sampling
Stop
Change
Frequency
Type
Start
Frequency
44

5.2 Simulation Results

5.2.1 LTCC Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and
Center Frequency

Figure 14: shows the simulated values of the Insertion Loss S(1,1): -30.794dB, Return Loss
S(2,1): -0.611dB and Center Frequency freq: 61.81GHz

45

5.2.2 LTCC Band-Pass filter (with parasitic element) simulated Bandwidth

Figure 15: LTCC Band-Pass filter (with parasitic element) simulated Bandwidth

By using the simulated values generated as shown above, at the 3dB Bandwidth can be
derived:

High center frequency (M4) Low center frequency (M3) / Middle center frequency
(M5)

= [M4(freq)- M3(freq)]/M5(freq)

= [(64.13GHz 60.28GHz)/ 61.81GHz] x 100%

= 6.23%

46

5.2.3 LTCC (without parasitic element) Insertion Loss, Return Loss and Center
Frequency

Figure 16: Shows the simulated values of the Insertion Loss S(1,1):-29.742dB, Return Loss
S(2,1):-0.695dB and Center Frequency freq: 61.81GHz

47

5.2.4 LTCC Band-Pass filter (without parasitic element) simulated Bandwidth

Figure 17: LTCC Band-Pass filter (without parasitic element) final simulated result

By using the simulated values generated as shown above, at the 3dB Bandwidth can be
derived:

(M5)


= [(63.92GHz 60.46GHz)/ 61.81GHz] x 100%

= 5.6%

48

5.2.5 FR4 Band-pass Filter (with parasitic element) Insertion Loss, Return Loss and
Center Frequency

Figure 18: Shows the simulated values of the Insertion Loss S(1,1): -45.888dB, Return Loss
S(2,1): -5.434dB and Center Frequency freq: 1.502GHz

49

5.2.6 FR4 Band-Pass filter (with parasitic element) simulated Bandwidth

Figure 19: FR4 Band-Pass filter (with parasitic element) final simulated result

By using the simulated values generated as shown above, the Bandwidth can be derived:

(M5)


= [(1.583GHz 1.451GHz)/ 1.502GHz] x 100%

= 8.79%

50

5.2.7 FR4 Band-pass Filter (without parasitic element) Insertion Loss, Return Loss and
Center Frequency

Figure 20: Shows the simulated values of the Insertion Loss S(1,1): 25.015dB, Return Loss
S(2,1): 5.670dB and Center Frequency freq: 1.535GHz

51

5.2.8 FR4 Band-Pass filter (without parasitic element) simulated Bandwidth

Figure 21: FR4 Band-Pass filter (with parasitic element) final simulated result

By using the simulated values generated as shown above, the Bandwidth can be derived:

(M5)


= [(1.585GHz 1.454GHz)/ 1.534GHz] x 100%

= 8.54%

52

5.2.9 LTCC Parasitic Element Performance

Table 9: LTCC Parasitic Element performance

Table 9 shows the characteristics of the LTCC designed BPF with parasitic elements versus the
deviation of the width of the parasitic element. The S-parameters on
11
S insertion loss obtain
more gradual curve, when the width of the parasitic element is more than 120 m and
21
S return
loss stage constant at around -0.5dB. Thus, with parasitic elements provides very stable
performance, even in the presence of process deviation. Furthermore, proven the BPF designed
performance of compactness and low loss in the design.

0.0554
0.0556
0.0558
0.0560
0.0562
0.0564
0.0566
0.0568
0.0570
0.0572
-35
-30
-25
-20
-15
-10
-5
0
50 60 80 100 120 140 160 180 200
B
a
n
d
w
i
d
t
h
S
-
p
a
r
a
m
e
t
e
r

a
n
d

B
a
n
d
w
i
d
t
h
Width of parasitic element (m)
S11
S21
Bandwidth
53

5.2.10 FR4 Parasitic Element Performance

Table 10: FR4 characteristics versus width of Parasitic Element Performance

Table 10 shows the characteristics of the FR4 designed BPF with parasitic elements versus the
deviation of the width of the parasitic element. The S-parameters on
11
S insertion loss obtain
more gradual curve, when the width of the parasitic element is more than 7000 m and
21
S return
loss stage constant at around -5dB. Thus, with parasitic elements provides very stable
performance, even in the presence of process deviation. Furthermore, proven the BPF designed
performance of compactness and low loss in the design.

0.0821
0.0822
0.0823
0.0824
0.0825
0.0826
0.0827
0.0828
-80
-70
-60
-50
-40
-30
-20
-10
0
B
a
n
d
w
i
d
t
h
S
-
p
a
r
a
m
e
t
e
r

(
d
B
)
Width of the parasitic element (m)
S11
S21
Bandwidth
54

5.3 Simulation Comparison

5.3.1 Design strip-line parallel-coupled LTCC BPF Comparison

Table 11: Design strip-line parallel-coupled LTCC BPF comparison

The characteristics of the LTCC BPF demonstrate in table 11 obtain the insertion losses is -31dB
and return losses is -0.6dB, versus spacing between coupled lines on the first and last filter
sections. The deviation ranges of each parameter of the designed BPF with parasitic elements are
smaller as compare to the conservative BPF any without parasitic elements. The optimal result
selection for the design LTCC BPF at the spacing 10m was selected.

-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
10 20 30 40 50 60 70 80 90 100
S
-
p
a
r
a
m
e
t
e
r

(
d
B
)
LTCC Spacing, S (m)
S11, Without parasitic
element
element
S11, With parasitic
element
S21, With parasitic
element
55

5.3.2 Design strip-line parallel-coupled FR4 BPF Comparison

Table 12: S-parameters versus spacing between coupled lines on the FR4 BPF

The characteristics of the FR4 BPF demonstrate in table 12 obtain the insertion losses is -36dB
and return losses is -6dB, versus spacing between coupled lines on the first and last filter
sections. The deviation ranges of each parameter of the designed BPF with parasitic elements are
smaller as compare to the conservative BPF any without parasitic elements. Have the same as the
LTCC design BPF as compare. The optimal result selection for the design FR4 BPF at the
spacing 400m was selected.

-40
-35
-30
-25
-20
-15
-10
-5
0
S
-
p
a
r
a
m
e
t
e
r
s

(
m
)
FR4 Spacing, S (m)
element
element
S11, With parasitic
element
S21, With parasitic
element
56

6 Chapter 6 - Design Fabrication

In the fabrication procedure, the designed filter is required to convert to Geber file so as to send
out to vendor for design fabrication.

Figure 22: Arrangement of the 4 layers of FR4 substrate is shown below.

1
st
layer of prototype,
Top surface Ground and
Bottom surface Etch off

2
nd
layer of prototype,
Top surface as shown above strip
element in colour yellow and

3
rd
layer of prototype,
element in colour Green and

4
th
layer of prototype,
element in colour Yellow and
Bottom surface Ground

57

Figure 23: Design layout versus OSP Coating

Below shows the design layout on the left column and prototypes with OSP coating on the right
column:

FR4 (OSP) layer 1

FR4 (OSP) layer 2

FR4 (OSP) layer 3

FR4 (OSP) layer

58

Figure 24: Design layout versus HASL Coating

Below shows the design layout on the left column and prototypes with HASL coating on the
right column:

FR4 (HASL) Layer 1

FR4 (HASL) Layer 2

FR4 (HASL) Layer 3

FR4 (HASL) Layer 4

59

7 Chapter 7 - Evaluation Tests

7.1 Setup on test equipment

Prototype measurement is performed firstly in FYP BLK 82, room5-06 with the following measuring
equipments and tools:

a) Spectrum Analyzer
b) 2m BNC cables x 2
c) BNC connector with 50 load termination x 2
d) SMA connector with 50 x 2

Figure 25: Photos of the test equipment a) Spectrum Analyzer b) 2m BNC cable c) BNC to
spectrum analyzer d) 50 SMA connector

a) Spectrum Analyzer b) 2m BNC cable
c) BNC to spectrum analyzer

d) 50 SMA connector
60

Figure 26: Diagram shows the SMA connectors are soldier on the 3
rd
layer of the designed
FR4 BPF

61

7.2 Actual Test Result

7.2.1 FR4 (HASL) BPF generated results

With the setup as shown below, the insertion loss and return loss are generated by the spectrum
analyzer as shown in Figure 28 and 29 respectively.

Figure 27: FR4 (HASL) Test Setup

11
S :-
21.803dB)
62

21
S : -
17.269dB)

7.2.2 FR4 (OSP) BPF generated results

With the setup as shown below, the insertion loss and return loss are generated by the spectrum
analyzer as shown in Figure 31 and 32 respectively.

Figure 30: Four layer FR4 substrate BPF (OSP) Test Setup

63

11
S : -
24.579dB)

21
S : -
7.5493dB)
64

7.3 Comparison of prototypes and simulated results

Table 13: Comparison of prototypes and simulated results

Using the ideal simulated results comparing with the actual prototypes, the return loss shows a
drastic drop using HASL coating method of -24.085dB and a gain on the insertion loss of -
11.835dB. While using the OSP coating method, the return loss has a slight increase of -2.871dB
as compared to HASL method and a great decrease on the insertion loss of -9.7197dB.

From the results generated and compared in the chart above concluded that OSP coated FR4 BPF
shows to have better performance in turn of lower insertion loss and higher return loss as
compared to HASL.

-50
-40
-30
-20
-10
0
FR4 Simulation FR4 Prototype (HASL) FR4 Prototype (OSP)
S
-
P
a
r
a
m
e
t
e
r

(
d
B
)
S11
S21
65

8 Chapter 8 - Conclusion

The final project proposed and demonstrated a 1.5GHz stripline parallel-coupled bandpass filter
with parasitic elements on a four layers of FR4 substrate.

Similarly, all projects has limitation and constraint, for the intrinsic area for the three-pole four
layers of 50-m thick LTCC BPF is 1.6mm by 0.66mm. Simulation result achieved an insertion
loss of -30.79dB and a return loss only -0.61dB. That included all transitions section, with
bandwidth of 6.23% with center frequency of 61.81GHz is obtained. Thus, theoretically
objective of compact, low loss performance and minimal cost is achieved. However, due to cost
constraint, proposed FR4 BPF to replaced LTCC.

A prototype three-pole bandpass filter was fabricated on four layers of 1600-m thick FR4
substrate. The intrinsic area of the prototype BPF filter is 86 mm by 31.6 mm. By using
Spectrum analyzer, the filter measure result achieved an insertion loss of -7.54dB, which
included all transitions section, while the bandwidth is 8.79 % and return losses well below -10
dB at the center frequency of 1.63GHz. The prototype BPF structure has comprised with low
loss performance and at a minimal cost.

Before starting on working on the prototype BPF, fundamental knowledge of the RF microwave
and usage of the software tool have demanded a lot of time on researching and understanding but
was fulfilling. Starting from simulation process to producing the final prototype has been a long
journey nevertheless it has completed within the given time frame, thus time management skills
are also acquired thru out the entire course of this project.

Software Agilent ADS enabled the performance of the designed filter to be evaluated before the
filter was implemented for the fabrication. Hence, reducing on the time spent to select the right
filter range. In a nutshell, it was the importance of learning process and experience gained that
has been both beneficial and rewarding in this project.

66

9 Chapter 9 - Suggestion for future works

In order to enhance the works better, further exploring on the BPF material should be done. In
additional, improvement on the gain and insertion loss can be analyzed so as to achieve better
results for future works.

67

10 Reference

[1] K. Maruhashi, S. Kishimoto, M. Ito, K. Ohata, Y. Hamada, T. Morimoto, and H. Shimawaki,
"Wireless uncompressed-HDTVsignal transmission system utilizing compact 60-GHz-band
transmitter and receiver," 2005 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1867-1870,
June 2005.
[2] J.-H. Lee, G. DeJean, S. Sarkar, S. Pinel, K. Lim, J. Papapolymerou, J. Laskar, and M.
Tentzeris, " Highly Integrated Millimeter-wave Passive Components Using 3-D
LTCC System-on-Package (SOP) Technology," IEEE trans. Microwave Theory Tech., vol.
53, no. 6, pp. 2220-2229, June 2005.
[3] D. Y. Jung, W. I. Chang, and C. S. Park, "A System-on-Package Integration of 60 GHz ASK
Transmitter," 2006 IEEE Radio and Wireless Symp. Dig., pp. 151-154, Jan. 2006.
[4] J.-H. Lee, S. Pinel, J. Papapolymerou, J. laskar, and M. Tentzeris, "Low-Loss LTCC Cavity
Filters Using System-on-Package Technology at 60 GHz," IEEE trans. Microwave
Theory Tech., vol. 53, no. 12, pp. 3817-3824, Dec. 2005.
[5] M. Ito, K. Maruhishi, K. Ikuina, T. Hashiguchi, S. Iwanaga, and K. Ohata, "A 60-GHz-Band
Planar Dielectric Waveguide Filter for Flip-Chip Modules," IEEE trans. Microwave Theory
Tech.,vol. 49, no. 12, pp. 2431-2436, Dec. 2001.
[6] J.-H. Lee, N. Kidera, S. Pinel, J. Papapolymerou, J. Laskar, and M. Tentzeris, "A Highly
Integrated 3-D Millimeter-Wave Filter Using LTCC System-on-Package (SOP) Technology
for V-band WLAN Gigabit Wireless Systems," 2005 Asia-Pacific Microwave Conf. Dig., pp.
3-5, 2005.
[7] Y. C. Lee and C. S. Park, "A 60GHz Stripline BPF for LTCC System-in-Package
Applications," 2005 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1413-1416, June 2005.
[8] A. Simine, D. Kholodnyak, P. Turachuk, V. Piatnitsa, H.Jantunen, and I. Vendik,
"Enhancement of Inductance Q-factor for LTCC Filter Design," 35th European Microwave
Conference Dig., pp. 1319-1322, 2005. 1652 Thiswork o:A A waveguide, ceramic V MEMS,
SiA waveguide, LTCC K> waveguide, Quartz 0 planar, LTCC O<waveguide, Si A
D planar, LCP
[9] H. Wheeler, Transmission line properties of parallel strips separated by a dielectric
sheet, IEEE Trans., MTT-13, 1965, 172185.
[10] K. C. Gupta, R. Garg, I. Bahl, and P. Bhartis, Microstrip Lines and Slotlines, Second
Edition, Artech House, Boston, 1996.
[11] E. O. Hammerstard, Equations for microstrip circuit design, in Proceedings of the
European Microwave Conference, Hamburg, Germany, 1975, pp. 268272.
[12] R. Garg and I. J. Bahl, Characteristics of coupled microstriplines, IEEE Trans., MTT-
27, July 1979, 700705. Corrections in IEEE Trans., MTT-28, March 1980, p. 272.

[13] J.-S. Hong, J.-M. Shi, and L. Sun, Exact computation of generalized scattering matrix
of suspended microstrip step discontinuities, Electronics Letters, 25, 5, 1989,
335336
Http://www.pwbrc.org/bmr/hasl.htm

Http://cp.literature.agilent.com/litweb/pdf/5989-7568EN.pdf

Http://www.p-m-services.co.uk/how%27s_fr4_made_.htm
68

11 Appendix

69

Figure 1 Showing the coupled microstrip lines 400m by 50m with spacing of 10m.

Figure 2 Showing the coupled striplines 400m by 50m with spacing of 100m.

70

Figure 3 Shown 3D object on coupled striplines 400m by 50m with spacing of 100m of
four layers of LTCC substrate.

71

Figure 4 Shown the coupled striplines 400m by 50m with spacing of 10m bonded by
parasitic element of 400m by 200m top and bottom.

Figure 5 Shown the coupled striplines 400m by 50m with spacing of 100m bonded by
parasitic element of 400m by 200m top and bottom.

72

Figure 6 Shown 3D object on coupled striplines 400m by 50m with spacing of 100m of
four layers of LTCC substrate with parasitic element.

73

Figure 7 Below shown four layers of substrate setting:
i. Thickness : 50m
ii. Permitivity (
r
c ) real is 7.7 and loss tangent is 0.002.

Figure 8 Below shown metallization setting on designed LTCC substrate layer and layout layer
conductivity before processing to simulation step.

74

Figure 9 Below shown simulation setting on designed LTCC substrate layer:
a. Frequency type: Adaptive
b. Frequency start: 40GHz
c. Frequency stop : 80GHz
d. Sample Points Limit: 999

75

Table above: shown the characteristic of the coupled stripline with parasitic elements versus
spacing between adjacent lines.

The simulation was performed using a commercial EM simulator. Result in the increase in
insertion loss of the coupled line with parasitic elements is clearly smaller than that of the
normal coupled line, while the spacing increases. This concluded the low sensitivity to spacing
variation on the coupled stripline.
10 20 30 40 50 60 70 80 90 100
Without parasitic element -3.15 -4.481 -5.797 -7.118 -8.454 -9.79 -11.13 -12.48 -13.84 -15.2
With parasitic element -3.288 -4.347 -5.215 -5.99 -6.668 -7.285 -7.848 -8.387 -8.916 -9.426
-16
-14
-12
-10
-8
-6
-4
-2
0
S
2
1
I
n
s
e
r
t
i
o
n

l
o
s
s

(
d
B
)
Fig10, S
21
versus spacing between coupled line
with and without parasitic elements
76

Figure 10 Shown the layout of the designed LTCC BPF filter Without parasitic element and
with coupling stripline spacing of 10m on first and last section

Figure 11 Shown Object 3D of the Four layer designed LTCC BPF filter Without parasitic
element and with coupling stripline spacing of 10m on first and last section

77

Figure 12 Simulated Result on filter Without parasitic element and with coupling stripline
spacing of 10m on first and last section of the designed LTCC BPF filter.

78


79


80

spacing of 40m on first and last section of the designed LTCC BPF filter

81


82

Figure 17 Shown the layout of the designed LTCC BPF filter With parasitic element and with
coupling stripline spacing of 10m on first and last section

Figure 18 Shown Object 3D of the designed LTCC BPF filter With parasitic element and with

83

Figure 19 Simulated Result on filter With parasitic element and with coupling stripline

84


85


86


87


88

Figure 24 Shown the layout of the designed FR4 BPF filter Without parasitic element and
with coupling stripline spacing of 100m on first and last section

Figure 25 Shown Object 3D of the designed Four layer FR4 BPF filter Without parasitic
element and with coupling stripline spacing of 100m on first and last section

89

spacing of 100m on first and last section of the designed FR4 BPF filter

90


91


92


93


94

Figure 31 Shown the layout of the designed FR4 BPF filter With parasitic element and with

Figure 32 Shown Object 3D of the designed FR4 BPF filter With parasitic element and with

95

Figure 33 Simulated Result of filter With parasitic element and with coupling stripline

96


97


98


99


100

CAPSTONE Project Meeting Report [1]

1. Date 06 February 2010
2. Time 12:00am 2:00pm
3. Duration 2 hours
4. Venue Unisim HQ Room 4.16
5. Student Name Pang Kim Peck
6. Project Name RF filter for millimeter-wave System-on-package
SOP using Low-Temperature Co-fired Ceramic
LTCC
7. Review of Previous Meeting
and progress
NA

8. Minutes of current meeting 1. Orientation on Advanced Design System
(ADS) Software
2. Introduction on LTCC material using on RF
filter

9. Action items/ Targets to
achieve
1. Know how to use ADS software
2. Read reference books, on specifications of
different material on designing RF filter
3. Able to explain the waveform created via RF
filter and know how its enable to facilitate
communication system

10. Other comment/Areas to
improve
1. Must comprehend and know how to operate
the ADS software

11. Reference materials 1. ADS website on how to operate some basic
comments in this software
2. Some thesis on similar projects for reference in
designing the RF filter using LTCC

12. How did you progress so far?
(10 Excellent, 1 Poor)
7: Able to comprehend and knowledge in
designing RF filter using LTCC and its operation.

101

1. Date 27 February 2010
2. Time 1:00pm 3:00pm
3. Duration 2 hours
LTCC
and progress
NA No follow up

8. Minutes of current meeting 3. Demonstration on Advanced Design System
(ADS) Software tools
4. Discuss on different material use on RF filters
(multilayer substrate)
5. Discuss on different RF filters and theirs
applications

9. Action items/ Targets to achieve 4. Must know how to use ADS tools (draw
schematics) (Must achieve 50% target)
different material on designing RF filters (Must
achieve 60% target)
6. Must be able to explain different RF filter
capability from reference books and website.
(Must achieve 50% target)

improve
2. Must fully digest and know how to
demonstrate with ADS tools

comments in this software
designing the RF filter using LTCC
5. Saved designed demo for thesis

6 : Able to understand and knowledge in designing
RF filter using LTCC and its operation.

102

1. Date 13 March 2010
2. Time 1:00pm 3:00pm
3. Duration 2 hours
6. Project Name RF filter for millimeter-wave System-on-
package SOP using Low-Temperature Co-fired
Ceramic LTCC
and progress
For 2nd Meeting,
1. Able to show the supervisor the layout
schematics diagram and RF circuit ready
for the proposal submission (dated
08March10).

8. Minutes of current meeting 6. Elaboration on (ADS) tools examples by
supervisor and more exploration skill
needed by the student. Preparing for the
next meeting.
7. Interaction with supervisor on different
material use on RF filters (multilayer
substrate) dimension and theirs
application.

achieve
7. Must know how to use ADS tools (draw
layout diagram) (Must achieve 60%
target)
different material on designing RF filters
(Must achieve 70% target)
capability from reference books and
website. (Must achieve 60% target)
improve
3. Must fully digest and know how to
11. Reference materials 6. ADS website on how to operate some
basic comments in this software
7. Some thesis on similar projects for
reference in designing the RF filter using
LTCC
6 : Able to understand and knowledge in
designing RF filter using LTCC and perform
layout diagram requirement.
103


1. Date 27 March 2010
2. Time 1:00pm 3:00pm
3. Duration 2 hours
LTCC
and progress
For 3
rd
Meeting,
2. Able to show the supervisor the waveform
generated from the layout design diagram on
BPF.
8. Minutes of current meeting 8. Supervisor commences improvement on
layout diagram and waveform generated result.
(Improve BPF design by adding component
like parasitic elements). Preparing for the next
meeting.
9. Interaction with supervisor on alternative
source of material use on RF filters (multilayer
substrate BPF) for fabrication. For example
use RF4 material.
achieve
10. Further improvement needed for BPF layout
diagram in order to achieve require waveform.
alternative material on fabrication process on
RF filters (prepare for the second design using
RF4 material).
capability from reference books and website.
improve
4. Continuous exploring knowledge on circuit
design and demonstrate with ADS tools
comments in this software(Using help tools)
designing the RF filter (BPF) using LTCC
6 : Able to understand and knowledge in designing
RF filter (BPF) using LTCC and performing the
layout design requirement.
104


1. Date 10 April 2010
2. Time 1:00pm 4:00pm
3. Duration 3 hours
6. Project Name RF filter for millimeter-wave System-on-package SOP
using Low-Temperature Co-fired Ceramic LTCC
and progress
For 4
th
Meeting,
3. Able to show the supervisor the improved waveform
generated (with parasitic element) from the layout
design diagram on BPF.
8. Minutes of current meeting 10. Supervisor commences (Losses Improvement of BPF
design by adding component with parasitic
elements).
Whereby, 1
st
design is completed.
11. For 2
nd
design, use alternative source of material
(FR4) on multilayer substrate BPF of RF filters for
simulation with frequency range of 2GHz.
Prepare for next meeting session 24April2010.
achieve
13. Continuous further fine tune on 1
st
design BPF layout
in order to perform efficient waveform required.
14. Read reference books, on specifications of alternative
material on fabrication process on RF filters (prepare
for the second design using RF4 material).
15. Must understand equivalent circuit of RF filter from
reference books and website.
improve
designing the RF filter (BPF) using LTCC and
alternative material like FR4.
12
.
How did you progress so far?
7 : Able to understand and widen the knowledge in
designing RF filter (BPF) of multilayer LTCC and FR4
material performing the layout design requirement.
105


1. Date 24 April 2010
2. Time 1:00pm 3:00pm
3. Duration 2 hours
6. Project Name RF filter for millimeter-wave System-on-package SOP
using Low-Temperature Co-fired Ceramic LTCC
7. Review of Previous
Meeting and progress
For 5
th
Meeting,
4. Able to show the supervisor alternative source of
material (FR4) of the layout design diagram on BPF.
8. Minutes of current
meeting
12. For 2
nd
design, changes of centre frequency range of
1.5GHz with FR4 material on multilayer substrate BPF
of RF filters for simulation.
Prepare for next meeting session No.7 on
6
th
Jul 2010.

9. Action items/ Targets
to achieve
16. 1
st
design BPF layout diagram completed.
17. Read reference books, on specifications of alternative
FR4 material on fabrication process on RF filters.
18. Must understand equivalent circuit of RF filter from
reference books and website.
10. Other comment/Areas
to improve
6. Continuous exploring knowledge on circuit design and

11. Reference materials 12. ADS website on how to operate some basic comments
in this software(Using help tools)
12. How did you progress
so far?
6 : Able to understand and widen the knowledge in
designing RF filter (BPF) of multilayer LTCC and FR4
material performing the layout design requirement.
106


1. Date 06 July 2010
2. Time 7:00pm 9:00pm
3. Duration 2 hours
package SOP using Low-Temperature Co-fired
Ceramic LTCC
For 6
th
Meeting,
5. Further improve on layout design diagram
of BPF with using FR4 material.

8. Minutes of current meeting 13. Improve of centre frequency range of from
2GHz to 1.5GHz with FR4 material on
multilayer substrate BPF of RF filters for
simulation.

achieve
19. Thus, completing the design on FR4- BPF
layout diagram ready for fabrication.
alternative FR4 material on fabrication
process on RF filters.
21. Must understand equivalent circuit of RF
filter from reference books and website.
improve

comments in this software(Using help
tools)
15. Some thesis on similar projects for
reference in designing the RF filter (BPF)
using LTCC and alternative material like
FR4.
12. How did you progress so
far?
7 : Able to understand and widen the knowledge
in designing RF filter (BPF) of multilayer
LTCC and FR4 material performing the

107


1. Date 04 September 2010
2. Time 5:00pm 7:00pm
3. Duration 2 hours
4. Venue Unisim CC Room 5.06
fired Ceramic LTCC
For 7
th
Meeting,
6. Review improves design on multilayer
substrate BPF of RF filters on simulation
regarding centre frequency (range of from
2GHz to 1.5GHz) using FR4 material.

8. Minutes of current meeting 14. Discuss on thesis format writing and content
requirement.
15. Able to produce waveforms on fabricated
project by using school Agilient analyzer
model E5062A and discussion on result
obtained.
achieve
alternative FR4 material on fabrication
process on RF filters.
23. Must understand equivalent circuit of RF
filter from reference books and website.
improve
design and demonstrate with ADS tools and
Agilient analyzer.

17. Some thesis on similar projects for reference
in designing the RF filter (BPF) using LTCC
and alternative material like FR4.
far?
7 : Able to understand and widen the
knowledge in designing RF filter (BPF) of
multilayer LTCC and FR4 material
performing the layout design requirement.

108


1. Date 18 September 2010
2. Time 5:00pm 7:00pm
3. Duration 2 hours
fired Ceramic LTCC
For 8
th
Meeting,
7. Review improves design on multilayer
substrate BPF of RF filters on simulation with
centre frequency (1.5GHz) using FR4 material
for fabrication.

requirement.
17. Able to produce waveforms on fabricated
project by using school Agilient analyzer
model E5062A and discussion on result
obtained.
achieve
alternative FR4 material on fabrication process
on RF filters.
25. Must understand equivalent circuit of RF filter
from reference books and website.
improve
Agilient analyzer.

far?

109


1. Date 16 October 2010
2. Time 5:00pm 7:00pm
3. Duration 2 hours
fired Ceramic LTCC
For 9
th
Meeting,
8. Review design on multilayer substrate BPF of
RF filters on simulation with centre frequency
(1.5GHz) using FR4 material for fabrication.

requirement.
19. Discuss on result measurement of the
fabricated prototype and software simulation.
achieve
alternative FR4 material on fabrication process
on RF filters.
27. Must understand equivalent circuit of RF filter
from reference books and website.
improve
Agilient analyzer.

far?

PangKimPeck FYP

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