DMP2305U

P-CHANNEL ENHANCEMENT MODE MOSFET

Features
Low On-Resistance 60m @ VGS = -4.5V 90m @ VGS = -2.5V 113m @ VGS = -1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data
Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate)

NEW PRODUCT

Drain

D
Gate

Source

Top View

Internal Schematic

Top View

Ordering Information (Note 3)

Part Number DMP2305U-7
Notes:

Case SOT23

Packaging 3000/Tape & Reel

1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

23P

23P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)

Date Code Key Year Code Month Code

2009 W Jan 1 Feb 2

2010 X Mar 3 Apr 4

2011 Y May 5 Jun 6

YM

2012 Z Jul 7

2013 A Aug 8 Sep 9

2014 B Oct O Nov N

2015 C Dec D

DMP2305U
Document number: DS31737 Rev. 4 - 2

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DMP2305U

Maximum Ratings @TA = 25C unless otherwise specified

Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS TA = 25C TA = 70C ID IDM Value -20 8 -4.2 -3.4 -10 Units V V A A

NEW PRODUCT

Continuous Drain Current (Note 4) Pulsed Drain Current (Note 5)

Steady State

Thermal Characteristics
Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W C/W C

Electrical Characteristics @TA = 25C unless otherwise specified

Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:

Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf

Min -20 -0.5

Typ 45 60 87 9 727 69 64 23 7.6 1.4 1.2 14.0 13.0 53.8 23.2

Max -1.0 100 -0.9 60 90 113

Unit V A nA V m S pF pF pF nC nC nC ns ns ns ns

Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -4.2A VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A VDS = -20V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz

TJ = 25C

VGS = -4.5V, VDS = -4V, ID = -3.5A

VDS = -4V, VGS = -4.5V, RL = 4, RG = 6, ID = -1A

4. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t 10s. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect.

DMP2305U
Document number: DS31737 Rev. 4 - 2

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December 2011
Diodes Incorporated

DMP2305U
20
20

VGS = 8V

16 ID, DRAIN CURRENT (A)

VGS = 4.5V

16 ID, DRAIN CURRENT (A)

VDS = 5V

VGS = 3.0V VGS = 2.5V

12
VGS = 2.0V

12

NEW PRODUCT

4
VGS = 1.5V

TA = 150C T A = 125C TA = 85C T A = 25C TA = -55C

0 0 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1 5

0 0

0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.1

0.1
VGS = 4.5V

0.08

0.08
TA = 150C

0.06

VGS = 2.5V

0.06

TA = 125C TA = 85C T A = 25C

0.04

VGS = 4.5V

0.04

TA = -55C

0.02

0.02

0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20

0 0 4 8 12 16 ID, DRAIN CURRENT (A) 20

Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

1.4

RDSON, DRAIN-SOURCE ON-RESISTANCE ()

1.6 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)

0.1

0.08

1.2

0.06

VGS = 2.5V ID = 5A

1.0
VGS = 4.5V ID = 10A

0.04
VGS = 4.5V ID = 10A

0.8
VGS = 2.5V ID = 5A

0.02

0.6 -50

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)

0 -50

-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C)

Fig. 5 On-Resistance Variation with Temperature

Fig. 6 On-Resistance Variation with Temperature

DMP2305U
Document number: DS31737 Rev. 4 - 2

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Diodes Incorporated

DMP2305U

1.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)

20

ID = 1mA

IS, SOURCE CURRENT (A)

0.8

16

NEW PRODUCT

0.6
ID = 250A

12
TA = 25C

0.4

0.2

0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000

0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.4

10,000
T A = 150C

IDSS, LEAKAGE CURRENT (nA)

1,000
TA = 125C

C, CAPACITANCE (pF)

1,000
Ciss

100
T A = 85C

10
TA = 25C

100

C oss Crss

1
T A = -55C

10 0 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 4 20

0.1 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) 20

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

100
PW = 10s

-ID, DRAIN CURRENT (A)

10

RDS(on) Limited

DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100s

0.1

0.01 0.01

0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area

100

DMP2305U
Document number: DS31737 Rev. 4 - 2

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DMP2305U

1 r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7 D = 0.5 D = 0.3

0.1

D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 170C/W P(pk)

NEW PRODUCT

D = 0.02

0.01

t1

D = 0.01 D = 0.005

t2 T J - T A = P * R JA(t) Duty Cycle, D = t1/t2

D = Single Pulse

0.001 0.00001

0.0001

0.001

0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response

10

100

1,000

Package Outline Dimensions

SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm

B C

H K D J F G L M

K1

Suggested Pad Layout

Y Z

Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

DMP2305U
Document number: DS31737 Rev. 4 - 2

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December 2011
Diodes Incorporated

DMP2305U

IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 2011, Diodes Incorporated www.diodes.com

NEW PRODUCT

DMP2305U
Document number: DS31737 Rev. 4 - 2

6 of 6 www.diodes.com

December 2011
Diodes Incorporated