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Procedure:
Part A: Junction Diode: Forward-bias Diode Characteristics
1. Construct the circuit of Fig. 1.1 with the supply (E) is set to 0 V. Record the measured value of the resistor.
+VR
Fig. 1.1 2. Increase the supply voltage until VD reads 0.1 V. Then measure current ID and record the measuremt in Table 1.1 3. Repeat step 2 for measurement in steps of 0.5V increment across diode. Record the measurement. 4. Replace the silicon diode by a germanium diode and complete Table 1.2. 5. Plot the characteristic plot ID versus VD for the silicon and germanium diodes. Complete the curves by extending the lower region of each curve to the intersection of the axis at ID= 0 mA and VD = 0 V.
1 Department of Electronics and Communication Engineering, NIT Rourkela
6. Determine the static and dynamic resistance of the diode from the curve at 3 different operating points.
2. Measure the voltage VD. Measure the reverse saturation current, Is. 3. Repeat the above step for germanium diode. 4. How do the results of Step 2 compare to Step 3? What are the similarities?
2. Increase the supply voltage so that Diode voltage will rise. Record the voltage at gaps of 0.5V and measure VZ and VR. Calculate the Zener current, IZ using the Ohms law given. Continue the process till the voltage across the diode stops increasing. 3. Plot IZ versus VZ using the data recorded. 4. Compare the device parameters with the rated parameters. 5. Calculate dynamic and static resistance at 3 different points in the graph.
2 Department of Electronics and Communication Engineering, NIT Rourkela
2. Comment of types/ range of instrument to be used for each part of the experiment.