1. 2. 3. 4. 5.

Write the definition of Diode? Explain the V-I characteristics of PN junction diode? Explain forward and reverse biasing of PN junction diode with proper diagram? Explain the Zener breakdown and Avalanche mechanism? Write down the effect of temperature the reverse current?

6. A Silicon diode has a saturation current of 1pA at 20oC. Find Diode bias voltage when diode current is 3mA. Diode bias current when the temperature is 100OC assuming the diode voltage to be constant. 7. Find the static and dynamic resistance of a p-n junction germanium diode if the temperature is 27OC and IO=1A for an applied forward bias of 0.2V. 8. Explain the transistor operation of PNP and NPN? 9. Write down the input and output characteristics of Common emitter and common base configuration? 10. A Ge transistor with = 100 has base-to-collector leakage current of 5 A. If the transistor is connected in common-emitter operation, find the collector current for base current (a) 0 and (b) 40 A. 11. In a transistor circuit, when the base current is increased from 0.32 mA to 0.48 mA, the emitter current increases from 15 mA to 20 mA. Find ac and ac values. 12. A transistor with = 0.98 and ICBO = 5 A has IB = 100 A. Find IC and IE. 13. Explain the operation of LED? 14. Write down the application of LED? 15. Explain the VI characteristics of Zener diode? 16. In a zener voltage regulator if Vz=10V, Rs=1K, RL-2K. If the input voltage Vin varies from 22 to 40 V, find the maximum and minimum values of zener current. 17. Write down the advantage , disadvantage of self bias and fixed bias? 18. For a fixed bias circuit using Si transistor, RB = 500 k, RC = 2 k, VCC = 15 V, ICBO = 20 A and = 70. Find the Q-point collector current ICQ. 19. For a fixed bias circuit, VCC = 12 V and RC = 4 k. The Ge transistor used is characterized by = 50, ICEO = 0 and VCE sat = 0.2 V. Find the value of RB that just results in saturation. 20. A fixed bias circuit has VCC = 20 V, RC = 5 k, RE = 4 k and RB = 300 k. The Si transistor has ICBO = 0 and = 50. Find ICQ and VCEQ. 21. Define OPAMP? 22. Write down the characteristics of an ideal diode? 23. Define the following: Slew rate, CMRR, input offset current, input bias current.

24. Derive the gain of Inverting and Non inverting amplifier? 25. Derive output voltage of the Differentiator and Integrator apamp ? 26. Design an OPAMP circuit such that output is given by vo=(0.5v1+0.75v2) where v1 and v2 are input voltages. Choose RF=10K 27. Explain the block diagram of Communication system? 28. Write down the advantage, disadvantage, application of optical fiber and co-axial cable. 29. Explain the need for modulation? 30. Prove that 66.67% of total power is wasted in transmitting carrier signal ? 31. An audio signal 10sin (21000t) amplitude modulates a carrier of 40sin (22000t). Find i. Modulation index ii. Sideband frequencies. iii. Bandwidth. iv. Total power delivered if RL = 1K. v. Amplitude of each side band components. 32. The antenna current of an AM transmitter is 8A when only carrier is transmitted, but increases to 8.93A when carrier is modulated by a single sine wave. Find the percentage modulation. Determine the antenna current when the depth of modulation changes to 0.8A. 33. A certain transmitter radiates 9KW with carrier unmodulated and 10.125KW when carrier is sinusoidally modulated. Calculate modulation index. If another sine wave corresponding to 40% modulation is transmitted simultaneously, determine the total power radiated. 34. Write the application of SSB,DSB and VSB? 35. Write down the advantage of VSB over SSB and DSB? 36. Given a FM equation VFM(t) = 10 cos [ 2 108t + 5 sin(2 15000t) ] , Calculate i. Carrier frequency. ii. Modulating frequency. iii. Frequency deviation. iv. Bandwidth using Carsons rule.