2N2219AHR

Hi-Rel NPN bipolar transistor 40 V - 0.8 A

Features
BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range

40 V 0.8 A > 100 - 65 C to + 200 C

Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram
TO-39

Description
The 2N2219AHR is a silicon planar epitaxial NPN transistors in TO-39 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-003 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails.

Table 1.

Device summary
Package TO-39 TO-39 Lead finish Gold Solder Dip Gold Marking 520100301 520100302 2N2219AT1 Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack

Order codes 2N2219AHR 2N2219AT1

January 2010

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Electrical ratings

2N2219AHR

Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ

Absolute maximum ratings

Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb 25C Total dissipation at Tc 25C Storage temperature Max. operating junction temperature Value 75 40 6 0.8 0.8 3 -65 to 200 200 Unit V V V A W W C C

Table 3.
Symbol RthJC RthJA

Thermal data
Parameter Thermal resistance junction-case __ Thermal resistance junction-ambient __ max max Value 58 218 Unit C/W C/W

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Electrical characteristics

Electrical characteristics
Tcase = 25 C unless otherwise specified. Table 4.
Symbol ICBO IEBO

Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = 60 V VCB = 60 V VEB = 3 V Min. Typ. Max. 10 10 10 Unit nA A nA

Tamb = 150 C

V(BR)CBO

IC = 10 A

75

Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) V(BR)EBO Emitter-base breakdown voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage

IC = 10 mA

40

IE = 10 A IC = 150 mA IC = 500 mA IC = 150 mA IC = 10 mA IC = 150 mA IC = 500 mA IC = 10 mA Tamb = -55 C VCE = 20 V f = 100 MHz IB = 15 mA IB = 50 mA IB = 15 mA VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V IC = 20 mA

6 0.3 1 1.2 75 100 40 35 2.5 8 35 300

V V V V

VCE(sat) (1) VBE(sat) (1)

300

hFE (1)

DC current gain

hfe CCBO ton toff

Small signal current gain Output capacitance (IE = 0) Turn-on time Turn-off time

VCB = 10 V 100 kHz f 1 MHz VCC = 30 V IB1 = 15 mA IC = 150 mA

pF ns ns

VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA

1. Pulsed duration = 300 s, duty cycle 2%

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Electrical characteristics

2N2219AHR

2.1

Test circuit
Figure 2. Resistive load switching test circuit

1. Fast electronic switch 2. Non-inductive resistor

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2N2219AHR

Package mechanical data

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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Package mechanical data

2N2219AHR

G H

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Revision history

Revision history
Table 5.
Date 09-Jan-2009 05-Jan-2010

Document revision history

Revision 1 2 Initial release Modified Table 1 on page 1 Changes

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