1SS133

Diodes

Switching diode
1SS133
Applications High speed switching External dimensions (Unit : mm)
CATHODE BAND (YELLOW)

Features 1) Glass sealed envelope. (MSD) 2) High reliability.

0.40.1

291

2.70.3

291 1.80.2

Construction Silicon epitaxial planar

ROHM : MSD JEDEC : DO-34

Taping specifications (Unit : mm)

Symbol Standard dimension value(mm) T-72 B T-77 26.0 52.41.5 +0.4 0

H2 BLUE

BROWN

E
B C

L1 F H1

L2 D

T-72 5.00.5 T-77 5.00.3 T-72 C 1.0 max. T-77 T-72 D 0 T-77 T-72 1/2A1.2 E T-77 1/2A0.4 T-72 0.7 max. T-77 0.2 max. T-72 H1 6.00.5 T-77 T-72 H2 5.00.5 T-77 T-72 1.5 max. |L1-L2| T-77 0.4 max. H1(6mm)BROWN

Absolute maximum ratings (Ta=25C)

Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward voltage (repetitive peak) Average rectified forward current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65 to 175 Unit V V mA mA mA mW

Electrical characteristics (Ta=25C)

Parameter Forward voltage Reverse current Capacitance between terminal Reverse recovery time Symbol VF IR Ct Trr Min. Typ. Max. 1.2 0.5 2 4.0 Unit V A pF ns Conditions IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V,IF=10mA,RL=50,Irr=1/10 IR

Rev.C

1/3

1SS133
Diodes
Electrical characteristics curves (Ta=25C)
100 Ta=75 1000000 Ta=175 100000 10 f=1MHz

FORWARD CURRENT:IF(mA)

Ta=25 Ta=-25

10 Ta=175

10000 1000 100 10

Ta=125 Ta=75 Ta=25 Ta=-25

CAPACITANCE BETWEEN TERMINALS:Ct(pF)

Ta=125

REVERSE CURRENT:IR(nA)

1 0.1

0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGEVF(V) VF-IF CHARACTERISTICS 1.2

0.1 0 10 20 30 40 50 60 70 80 0 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30

950

100

FORWARD VOLTAGE:VF(mV)

REVERSE CURRENT:IR(nA)

CAPACITANCE BETWEEN TERMINALS:Ct(pF)

940 930 920 AVE:925.7mV 910 900

Ta=25 IF=100mA n=30pcs

90 80 70 60 50 40 30 20 10 0 AVE:21.3nA

Ta=25 VR=80V n=30pcs

0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0

Ta=25 VR=0.5V f=1MHz n=10pcs AVE:0.803pF

VF DISPERSION MAP

IR DISPERSION MAP

Ct DISPERSION MAP

20

20

PEAK SURGE FORWARD CURRENT:IFSM(A)

PEAK SURGE FORWARD CURRENT:IFSM(A)

Ifsm 15

1cyc 8.3ms

RESERVE RECOVERY TIME:trr(ns)

2.5 2 1.5 1 0.5 0 AVE:1.46ns

Ta=25 VR=6V IF=10mA RL=50 n=10pcs

Ifsm 15 8.3ms 8.3ms 1cyc

10 AVE:11.6A 5

10

0 IFSM DISRESION MAP

0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100

Mounted on epoxy board 100 1000

IM=1mA IF=50mA

0.20 Rth(j-a)

Ifsm t

TRANSIENT THAERMAL IMPEDANCE:Rth (/W)

PEAK SURGE FORWARD CURRENT:IFSM(A)

1ms

time

300us

Rth(j-l) 100 Rth(j-c)

REVERSE POWER DISSIPATION:PR (W)

D=1/2 Sin(180)

DC

10

0.10

1 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100

10 0.001

0.00 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0.00 0.05 0.10 0.15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.20

Rev.C

2/3

1SS133
Diodes
0.20 DC
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A)

0.20 DC
ELECTROSTATIC DISCHARGE TEST ESD(KV)

20

0.15 D=1/2 0.10 0A 0V t T 0.00 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) Io VR D=t/T VR=40V Tj=175

0.15 D=1/2 0.10 0A 0V Io t T 0 VR D=t/T VR=40V Tj=175 Sin(180)

15

10 AVE:2.2kV 5

AVE:7.4kV

0.05

0.05

Sin(180) 0.00 175

0 175

25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)

C=200pF R=0

C=100pF R=1.5k

ESD DISPERSION MAP

Rev.C

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1