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ATF-35143

Low Noise Pseudomorphic HEMT


in a Surface Mount Plastic Package

Data Sheet
Description

Features

Avagos ATF-35143 is a high dynamic range, low noise,


PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.

Based on its featured performance, ATF-35143 is suitable


for applications in cellular and PCS base stations, LEO
systems, MMDS, and other systems requiring super low
noise figure with good intercept in the 450 MHz to 10
GHz frequency range.
Other PHEMT devices in this family are the ATF-34143
and the ATF-33143. The typical specifications for these
devices at 2 GHz are shown in the table below:

Surface Mount Package


SOT-343

Lead-free Option Available


Low Noise Figure
Excellent Uniformity in Product Specifications
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available

Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
18 dB Associated Gain
11 dBm Output Power at 1 dB Gain Compression
21 dBm Output 3rd Order Intercept

Applications
Low Noise Amplifier for Cellular/PCS Handsets
LNA for WLAN, WLL/RLL, LEO, and MMDS Applications
General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications

DRAIN

SOURCE

5Px

Pin Connections and Package Marking


SOURCE

Attention: Observe precautions for


handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.

GATE

Note: Top View. Package marking provides


orientation and identification.
5P = Device code
x = Date code character. A new character
is assigned for each month, year.

Part No.

Gate Width

Bias Point

NF (dB)

Ga (dB)

OIP3 (dBm)

ATF-33143

1600

4 V, 80 mA

0.5

15.0

33.5

ATF-34143

800

4 V, 60 mA

0.5

17.5

31.5

ATF-35143

400

2 V, 15 mA

0.4

18.0

21.0

ATF-35143 Absolute Maximum Ratings[1]


Symbol

Parameter
Drain - Source Voltage [2]

VDS

Source Voltage [2]

Units

Absolute
Maximum

5.5

VGS

Gate -

-5

VGD

Gate Drain Voltage [2]

-5

IDS

Current[2]

mA

Idss[3]

mW

300

Drain

Pdiss

Total Power

Dissipation[4]

RF Input Power

Pin max

Channel Temperature

TCH

dBm

14

160

TSTG

Storage Temperature

-65 to 160

jc

Thermal Resistance [5]

C/W

150

Notes:

1. Operation of this device above any


one of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25C.
Derate 3.2 mW/C for TL > 67C.
5. Thermal resistance measured using
QFI Measurement method.

Product Consistency Distribution Charts [7, 8]


120

120
+0.6 V

100

100

80
IDS (mA)

Cpk = 1.73
Std = 0.35

80
0V

-3 Std

60

+3 Std

60

40

40
0.6 V

20

20

0
0

4
VDS (V)

0
19

20

21

22

23

24

OIP3 (dBm)

Figure 1. Typical Pulsed I-V Curves[6].


(VGS = -0.2 V per step)

Figure 2. OIP3 @ 2 GHz, 2V, 15 mA.


LSL=19.0, Nominal=20.9, USL=23.0

200

Cpk = 3.7
Std = 0.03

160

Cpk = 2.75
Std = 0.17

160
120
120

-3 Std

+3 Std

-3 Std

+3 Std

80
80
40

40

0
0.2

0.3

0.4

0.5

NF (dB)

Figure 3. NF @ 2 GHz, 2V, 15 mA.


LSL=0.2, Nominal=0.37, USL=0.7

0.6

0.7

0
16

17

18

19

20

GAIN (dB)

Figure 4. Gain @ 2 GHz, 2V, 15 mA.


LSL=16.5, Nominal=18.0, USL=19.5

Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test requirements. Circuit losses have been de-embedded from actual measurements.

ATF-35143 Electrical Specifications


TA = 25C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Idss

[1]

VP [1]
Id
gm[1]

Saturated Drain Current

VDS = 1.5 V, IDS = 10% of Idss

Quiescent Bias Current

VGS = 0.45 V, VDS = 2 V

Transconductance
Gate to Drain Leakage Current

Igss

Gate Leakage Current

Ga

VDS = 1.5 V, VGS = 0 V

Pinchoff Voltage

IGDO

NF

Units

Noise Figure[3]

Associated Gain[3]

OIP3

Output 3rd Order


Intercept Point [4, 5]

P1dB

1 dB Compressed
Intercept Point [4]

VDS = 1.5 V, gm = Idss /VP

Min.

50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)

40

65

80

-0.65

-0.5

-0.35

mA

15

mmho

90

120

10

150
0.7
0.9

VGD = 5 V

VGD = VGS = -4 V

f = 2 GHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dB

0.4
0.5

f = 900 MHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dB

0.3
0.4

f = 2 GHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dB

f = 900 MHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dB

f = 2 GHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dBm

f = 900 MHz

VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA

dBm

19
14

f = 2 GHz

VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA

dBm

10
8

f = 900 MHz

VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA

dBm

9
9

Input
Matching Circuit
_mag = 0.66
_ang = 5
(0.4 dB loss)

DUT

50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)

250

16.5
14

18
16
20
18

19

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.

Max.

mA

Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone

Input

Typ.[2]

21
14

19.5
18

ATF-35143 Typical Performance Curves


30

30
OIP3

25

OIP3, P1dB (dBm)

20
15
P1dB

10

20
P1dB

15

2V
3V
4V

10

2V
3V
4V

OIP3

0
0

10

20

30

40

50

60

10

20

20

2.5

50

60

24

2.5
2V
3V
4V

22

18

1.5

20

1.5

17

18

Ga (dB)

Ga

NF (dB)

Ga (dB)

2V
3V
4V

Ga

NF

15
0

10

20

30

NF

16

40

50

0.5

16

14

60

0.5

0
0

10

20

IDSQ (mA)

30

40

50

60

IDSQ (mA)

Figure 8. NF and Ga vs. Bias at 2GHz.[1]

Figure 9. NF and Ga vs. Bias at 900MHz.[1]

25

20

20

15

15

P1dB (dBm)

P1dB (dBm)

40

Figure 7. OIP3 and P1dB vs. Bias at 900MHz.[1,2]

Figure 6. OIP3 and P1dB vs. Bias at 2GHz.[1,2]

19

30
IDSQ (mA)

IDSQ (mA)

NF (dB)

OIP3, P1dB (dBm)

25

10

10

5
2V
3V
4V

2V
3V
4V

-5

-5
0

20

40
IDS (mA)

Figure 10. P1dB vs. Bias (Active Bias)


Tuned for NF @ 2V, 15 mA at 2GHz.[1]

60

80

20

40

60

80

IDS (mA)

Figure 11. P1dB vs. Bias (Active Bias)


Tuned for NF @ 2V, 15 mA at 900MHz.[1]

Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power
output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is
approached.

ATF-35143 Typical Performance Curves, continued


25

1.50

5 mA
15 mA
30 mA

1.25
20

Fmin (dB)

Fmin (dB)

1.00
0.75

15

0.50
10

5 mA
15 mA
30 mA

0.25

0
2

10

20

0.8

0.6

18
25C
-40C
85C

0.4

12
4

15
25C
-40C
85C

5
0

15

1.5

10

1
P1dB
OIP3
Gain
NF

40

60

IDS (mA)

Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1]


(Active Bias, 2V, 3.9 GHz).

0.5

0
80

OIP3, P1dB (dBm), Gain (dB)

20

NF (dB)

OIP3, P1dB (dBm), Gain (dB)

2.5

20

Figure 15. OIP3 and P1dB vs. Frequency and


Temperature[1,2], VDS=2V, IDS=15mA.

25

FREQUENCY (GHz)

Figure 14. Fmin and Ga vs. Frequency and


Temperature, VDS=2V, IDS=15 mA.

10

20

FREQUENCY (GHz)

10

0.2

14

25

OIP3, P1dB (dBm)

1.0

NF (dB)

Ga (dB)

22

Figure 13. Associated Gain vs.


Frequency and Current at 2V.

Figure 12. Fmin vs. Frequency and Current at 2V.

16

FREQUENCY (GHz)

FREQUENCY (GHz)

25

20

2.5

15

10

1.5

NF (dB)

5
P1dB
OIP3
Gain
NF

0
-5
0

20

40

60

0.5
0
80

IDS (mA)

Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1]


(Active Bias, 2V, 5.8 GHz).

Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been deembedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.

ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.98
0.97
0.94
0.91
0.90
0.85
0.81
0.72
0.66
0.62
0.60
0.60
0.62
0.66
0.70
0.72
0.74
0.76
0.82
0.82
0.84
0.86

-16.90
-26.37
-34.76
-50.59
-58.26
-65.74
-80.62
-95.48
-125.99
-156.09
174.97
145.61
118.39
93.15
71.31
50.91
31.04
11.26
-3.08
-14.26
-26.64
-38.94
-54.78

13.34
13.29
13.16
12.83
12.66
12.44
12.04
11.61
10.71
9.79
8.93
8.06
7.20
6.26
5.43
4.58
3.64
2.56
1.45
0.43
-0.72
-1.83
-3.02

4.64
4.62
4.55
4.38
4.30
4.19
4.00
3.81
3.43
3.09
2.80
2.53
2.29
2.06
1.87
1.69
1.52
1.34
1.18
1.05
0.92
0.81
0.71

166.04
157.78
150.72
137.02
130.38
123.90
111.27
99.08
75.75
53.63
32.77
12.43
-7.12
-26.14
-44.14
-62.85
-81.42
-99.46
-115.94
-132.24
-149.24
-164.44
179.28

-31.70
-28.18
-25.85
-22.73
-21.62
-20.72
-19.33
-18.27
-17.08
-16.48
-16.14
-16.08
-16.31
-16.59
-16.89
-17.14
-17.52
-18.13
-18.79
-19.25
-19.58
-19.74
-20.18

0.026
0.039
0.051
0.073
0.083
0.092
0.108
0.122
0.140
0.150
0.156
0.157
0.153
0.148
0.143
0.139
0.133
0.124
0.115
0.109
0.105
0.103
0.098

77.91
71.12
65.76
54.85
49.69
44.45
34.61
25.21
6.95
-9.83
-25.73
-41.00
-54.14
-67.05
-78.09
-88.99
-100.38
-111.06
-119.00
-127.12
-135.42
-143.49
-152.36

0.73
0.72
0.71
0.68
0.67
0.65
0.62
0.59
0.52
0.45
0.38
0.31
0.25
0.20
0.16
0.14
0.17
0.22
0.28
0.34
0.42
0.49
0.56

-12.47
-17.53
-23.33
-34.88
-40.49
-46.03
-56.68
-66.71
-85.11
-102.71
-120.16
-138.01
-157.10
-178.27
157.62
121.82
82.33
53.17
27.32
6.01
-10.69
-22.32
-35.90

22.52
20.83
19.50
17.78
17.13
16.58
15.69
14.94
13.89
13.13
12.53
12.07
11.75
11.19
9.63
8.81
7.87
6.79
5.86
5.89
4.84
4.62
4.04

ATF-35143 Typical Noise Parameters


VDS = 2 V, IDS = 5 mA
Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.10
0.12
0.14
0.20
0.23
0.27
0.33
0.39
0.52
0.64
0.77
0.89
1.02
1.14
1.27

0.91
0.87
0.86
0.81
0.78
0.76
0.71
0.66
0.58
0.52
0.47
0.43
0.41
0.40
0.41

Ang.

Rn/50
-

Ga
dB

6.4
15.0
17.2
28.0
33.4
38.8
50.0
61.9
87.2
114.4
143.2
173.5
-155.2
-122.9
-90.1

0.22
0.22
0.22
0.22
0.21
0.21
0.19
0.17
0.13
0.09
0.06
0.05
0.07
0.13
0.24

19.3
17.9
17.5
16.3
15.8
15.4
14.7
14.0
12.7
11.5
10.4
9.5
8.7
8.0
7.5

MSG/MAG and S21 (dB)

25

opt

Freq.
GHz

20
MSG

15
10
S21

MAG

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.97
0.95
0.91
0.89
0.86
0.81
0.76
0.66
0.61
0.58
0.57
0.58
0.61
0.65
0.69
0.72
0.74
0.77
0.82
0.82
0.84
0.86

-18.75
-29.11
-38.28
-55.52
-63.78
-71.82
-87.59
-103.22
-134.81
-165.34
165.88
137.00
110.78
86.75
66.25
46.88
27.76
8.62
-5.28
-16.03
-28.32
-40.43
-56.14

15.89
15.79
15.61
15.17
14.92
14.65
14.11
13.54
12.40
11.29
10.27
9.27
8.33
7.32
6.44
5.54
4.56
3.45
2.33
1.29
0.19
-0.87
-1.99

6.23
6.16
6.03
5.73
5.57
5.40
5.08
4.76
4.17
3.67
3.26
2.91
2.61
2.32
2.10
1.89
1.69
1.49
1.31
1.16
1.02
0.91
0.80

164.76
155.98
148.42
133.92
127.01
120.27
107.36
95.04
71.95
50.43
30.28
10.68
-8.09
-26.38
-43.90
-61.97
-79.90
-97.18
-112.92
-128.66
-144.87
-159.49
-175.19

-32.40
-28.87
-26.56
-23.61
-22.62
-21.72
-20.35
-19.41
-18.27
-17.65
-17.33
-17.14
-17.14
-17.20
-17.20
-17.27
-17.39
-17.79
-18.20
-18.56
-18.79
-18.79
-19.33

0.024
0.036
0.047
0.066
0.074
0.082
0.096
0.107
0.122
0.131
0.136
0.139
0.139
0.138
0.138
0.137
0.135
0.129
0.123
0.118
0.115
0.115
0.108

77.63
70.58
64.88
54.16
49.11
44.08
34.60
25.71
9.04
-5.97
-20.15
-33.84
-45.60
-57.65
-68.22
-79.30
-90.87
-102.19
-110.80
-120.09
-129.92
-139.60
-149.17

0.63
0.61
0.60
0.57
0.56
0.54
0.51
0.47
0.41
0.34
0.27
0.21
0.17
0.13
0.11
0.14
0.19
0.26
0.33
0.39
0.45
0.51
0.57

-14.09
-19.69
-26.10
-38.73
-44.79
-50.70
-61.95
-72.47
-91.47
-110.05
-129.24
-150.49
-174.77
154.01
118.18
78.36
49.57
29.95
9.45
-7.98
-22.30
-32.23
-44.43

24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72

ATF-35143 Typical Noise Parameters


VDS = 2 V, IDS = 10 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.10
0.11
0.12
0.17
0.20
0.23
0.29
0.34
0.46
0.58
0.69
0.81
0.92
1.04
1.16

0.88
0.84
0.83
0.77
0.74
0.71
0.66
0.60
0.52
0.45
0.40
0.37
0.35
0.35
0.37

Ang.

Rn/50
-

Ga
dB

5.0
14.0
16.0
26.0
31.9
37.3
48.6
60.6
86.8
115.3
145.8
177.7
-149.3
-115.6
-81.8

0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.12
0.12
0.08
0.05
0.05
0.07
0.12
0.22

20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
8.8
8.3

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20
MSG

15
10

MAG

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.97
0.95
0.90
0.87
0.84
0.79
0.73
0.64
0.59
0.56
0.56
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.84
0.86

-19.75
-30.58
-40.15
-58.08
-66.65
-74.93
-91.13
-107.08
-139.07
-169.70
161.74
133.19
107.56
84.16
64.19
45.46
26.66
7.70
-5.93
-16.54
-28.76
-40.79
-56.40

17.02
16.90
16.69
16.18
15.90
15.59
14.97
14.34
13.09
11.90
10.81
9.77
8.78
7.75
6.86
5.93
4.93
3.80
2.68
1.63
0.54
-0.49
-1.60

7.10
7.00
6.83
6.44
6.23
6.02
5.61
5.21
4.51
3.93
3.47
3.08
2.75
2.44
2.20
1.98
1.76
1.55
1.36
1.21
1.06
0.95
0.83

164.04
154.98
147.18
132.28
125.22
118.41
105.38
93.08
70.17
49.03
29.27
10.04
-8.35
-26.29
-43.56
-61.33
-78.94
-95.93
-111.53
-126.76
-142.70
-157.02
-172.47

-32.77
-29.37
-27.13
-24.15
-23.10
-22.27
-20.92
-20.00
-18.94
-18.27
-17.79
-17.59
-17.46
-17.39
-17.33
-17.27
-17.27
-17.59
-17.92
-18.20
-18.49
-18.49
-18.94

0.023
0.034
0.044
0.062
0.070
0.077
0.090
0.100
0.113
0.122
0.129
0.132
0.134
0.135
0.136
0.137
0.137
0.132
0.127
0.123
0.119
0.119
0.113

77.60
70.54
64.80
54.23
49.25
44.36
35.36
26.85
11.15
-2.96
-16.43
-29.47
-40.80
-52.63
-63.33
-74.77
-86.46
-98.11
-107.51
-117.16
-127.03
-137.06
-147.50

0.57
0.55
0.54
0.51
0.49
0.48
0.44
0.41
0.35
0.29
0.23
0.17
0.14
0.11
0.12
0.16
0.22
0.29
0.36
0.41
0.47
0.53
0.58

-14.99
-20.86
-27.61
-40.74
-46.95
-53.06
-64.59
-75.32
-94.59
-113.89
-134.46
-158.65
172.14
134.01
95.85
63.20
40.01
23.11
3.55
-12.09
-26.21
-35.57
-47.29

24.89
23.05
21.91
20.17
19.53
18.93
17.95
17.17
16.01
15.09
14.30
13.68
12.29
10.74
9.99
9.34
8.57
7.62
6.79
6.76
5.81
5.55
5.06

ATF-35143 Typical Noise Parameters


VDS = 2 V, IDS = 15 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.10
0.13
0.14
0.19
0.22
0.23
0.29
0.34
0.45
0.56
0.67
0.79
0.90
1.01
1.12

0.88
0.83
0.82
0.76
0.72
0.70
0.64
0.58
0.49
0.42
0.37
0.34
0.33
0.34
0.36

Ang.

Rn/50
-

Ga
dB

4.5
13.1
15.3
26.1
32.6
36.9
48.5
60.9
87.9
117.4
149.0
-178.1
-144.3
-110.2
-76.3

0.19
0.17
0.16
0.15
0.15
0.14
0.12
0.07
0.13
0.07
0.05
0.05
0.07
0.13
0.23

20.9
19.4
19.2
17.9
17.3
17.0
16.2
15.4
14.1
12.8
11.7
10.8
9.9
9.2
8.6

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20

MSG

15
10

MAG

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.55
0.55
0.56
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.83
0.85
0.87

-20.95
-32.34
-42.36
-61.09
-69.98
-78.53
-95.14
-111.48
-143.89
-174.55
157.19
129.18
104.19
81.48
62.07
43.83
25.46
6.81
-6.74
-17.21
-29.31
-41.30
-56.87

18.17
18.02
17.77
17.18
16.85
16.50
15.81
15.11
13.73
12.46
11.31
10.22
9.20
8.15
7.24
6.29
5.27
4.14
3.01
1.94
0.87
-0.15
-1.24

8.10
7.96
7.73
7.22
6.96
6.69
6.17
5.69
4.86
4.20
3.68
3.24
2.88
2.56
2.30
2.06
1.84
1.61
1.41
1.25
1.11
0.98
0.87

163.18
153.79
145.67
130.36
123.20
116.28
103.17
90.88
68.24
47.48
28.10
9.28
-8.75
-26.37
-43.37
-60.90
-78.22
-94.88
-110.07
-125.15
-140.80
-154.83
-170.03

-33.56
-30.17
-27.96
-25.04
-24.01
-23.22
-21.94
-21.01
-19.83
-19.02
-18.49
-18.13
-17.79
-17.59
-17.33
-17.20
-17.14
-17.33
-17.65
-17.86
-18.06
-18.13
-18.56

0.021
0.031
0.040
0.056
0.063
0.069
0.080
0.089
0.102
0.112
0.119
0.124
0.129
0.132
0.136
0.138
0.139
0.136
0.131
0.128
0.125
0.124
0.118

77.39
70.55
65.08
54.79
50.12
45.58
37.15
29.29
14.76
1.63
-10.98
-23.67
-34.72
-46.33
-57.43
-68.78
-81.32
-93.11
-103.06
-112.88
-123.55
-134.43
-144.88

0.49
0.47
0.46
0.43
0.41
0.39
0.36
0.34
0.28
0.23
0.17
0.13
0.11
0.11
0.13
0.18
0.24
0.31
0.38
0.43
0.49
0.54
0.60

-15.99
-22.00
-29.03
-42.64
-48.96
-55.19
-66.91
-77.74
-97.29
-117.24
-139.78
-169.09
155.22
112.23
77.30
51.74
32.67
17.81
0.45
-15.44
-29.37
-38.55
-49.70

25.87
24.10
22.86
21.11
20.42
19.86
18.87
18.06
16.78
15.74
14.90
14.17
11.98
10.82
10.15
9.51
8.77
7.87
7.08
7.06
6.13
5.89
5.39

ATF-35143 Typical Noise Parameters


VDS = 2 V, IDS = 30 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.11
0.15
0.16
0.22
0.25
0.27
0.33
0.39
0.52
0.64
0.77
0.90
1.02
1.15
1.28

0.87
0.81
0.80
0.73
0.69
0.66
0.60
0.54
0.45
0.39
0.34
0.33
0.33
0.36
0.40

Ang.

Rn/50
-

Ga
dB

2.7
12.1
14.5
26.3
33.4
38.1
50.6
64.2
94.0
126.5
160.6
-164.7
-130.3
-97.5
-67.0

0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.10
0.07
0.05
0.06
0.10
0.18
0.30

21.6
20.2
19.9
18.7
18.0
17.7
17.0
16.2
14.8
13.5
12.4
11.4
10.5
9.7
9.1

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20

MSG

15
10

MAG

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.97
0.95
0.91
0.88
0.86
0.81
0.75
0.66
0.60
0.58
0.56
0.57
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.84
0.86

-18.76
-29.12
-38.28
-55.52
-63.78
-71.79
-87.55
-103.15
-134.65
-165.16
166.12
137.25
111.11
87.10
66.58
47.31
28.18
9.02
-4.82
-15.65
-28.00
-40.11
-55.87

16.07
15.97
15.79
15.34
15.09
14.82
14.27
13.71
12.56
11.45
10.43
9.44
8.51
7.51
6.64
5.76
4.81
3.71
2.61
1.60
0.51
-0.55
-1.68

6.36
6.29
6.16
5.85
5.68
5.51
5.17
4.85
4.25
3.74
3.32
2.97
2.66
2.38
2.15
1.94
1.74
1.53
1.35
1.20
1.06
0.94
0.82

164.73
155.93
148.37
133.87
126.95
120.22
107.29
95.00
71.95
50.50
30.44
10.91
-7.80
-26.05
-43.52
-61.59
-79.58
-96.96
-112.95
-128.77
-145.23
-160.01
-176.05

-32.77
-29.37
-27.13
-24.01
-22.97
-22.05
-20.82
-19.83
-18.71
-18.13
-17.79
-17.65
-17.59
-17.65
-17.65
-17.65
-17.72
-17.99
-18.34
-18.56
-18.71
-18.71
-19.25

0.023
0.034
0.044
0.063
0.071
0.079
0.091
0.102
0.116
0.124
0.129
0.131
0.132
0.131
0.131
0.131
0.130
0.126
0.121
0.118
0.116
0.116
0.109

76.79
70.22
64.53
54.04
49.13
44.06
34.85
25.98
9.56
-5.10
-19.00
-32.32
-43.61
-55.14
-65.42
-76.27
-87.47
-98.60
-107.41
-116.63
-126.02
-136.14
-146.13

0.65
0.63
0.62
0.59
0.57
0.56
0.52
0.49
0.42
0.35
0.29
0.23
0.18
0.13
0.10
0.11
0.16
0.23
0.29
0.35
0.42
0.49
0.55

-13.67
-19.08
-25.28
-37.48
-43.28
-49.01
-59.84
-69.88
-87.88
-105.14
-122.61
-141.22
-162.07
172.01
139.11
93.44
57.88
35.32
13.11
-4.62
-19.61
-29.62
-41.92

24.42
22.70
21.46
19.68
19.00
18.43
17.55
16.77
15.63
14.79
14.11
13.55
12.81
10.75
9.98
9.32
8.54
7.59
6.76
6.79
5.79
5.54
5.05

ATF-35143 Typical Noise Parameters


VDS = 3 V, IDS = 10 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.12
0.16
0.17
0.22
0.26
0.28
0.33
0.39
0.49
0.60
0.71
0.81
0.92
1.03
1.13

0.87
0.82
0.81
0.75
0.71
0.68
0.62
0.57
0.49
0.43
0.38
0.36
0.34
0.34
0.35

Ang.

Rn/50
-

Ga
dB

4.7
13.2
15.3
25.9
32.3
36.5
47.7
59.6
85.4
113.6
143.7
175.6
-151.3
-117.3
-82.7

0.21
0.19
0.19
0.17
0.16
0.16
0.14
0.13
0.10
0.08
0.05
0.05
0.07
0.12
0.21

20.0
19.0
18.8
17.8
17.2
16.7
15.9
15.1
13.7
12.5
11.4
10.4
9.6
8.9
8.4

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20

MSG

15
10

MAG

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

10

ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.96
0.94
0.90
0.87
0.84
0.78
0.73
0.63
0.58
0.56
0.55
0.56
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.85
0.86

-19.76
-30.58
-40.14
-58.04
-66.61
-74.88
-91.02
-106.95
-138.86
-169.42
162.05
133.54
107.88
84.56
64.57
45.84
27.11
8.18
-5.58
-16.18
-28.41
-40.49
-56.20

17.20
17.08
16.86
16.35
16.06
15.75
15.13
14.50
13.24
12.05
10.97
9.93
8.96
7.95
7.06
6.16
5.19
4.09
2.98
1.96
0.88
-0.15
-1.25

7.24
7.14
6.97
6.57
6.35
6.13
5.71
5.31
4.59
4.00
3.53
3.14
2.81
2.50
2.26
2.03
1.82
1.60
1.41
1.25
1.11
0.98
0.87

164.03
154.94
147.12
132.22
125.16
118.36
105.32
93.02
70.17
49.09
29.39
10.23
-8.11
-26.04
-43.28
-61.06
-78.75
-95.88
-111.57
-127.09
-143.31
-157.87
-173.65

-33.15
-29.90
-27.54
-24.58
-23.48
-22.62
-21.41
-20.45
-19.41
-18.79
-18.34
-18.06
-17.92
-17.86
-17.72
-17.59
-17.59
-17.79
-18.06
-18.27
-18.42
-18.49
-18.86

0.022
0.032
0.042
0.059
0.067
0.074
0.085
0.102
0.107
0.115
0.121
0.125
0.127
0.128
0.130
0.132
0.132
0.129
0.125
0.122
0.120
0.119
0.114

76.95
69.88
64.59
54.00
49.23
44.39
35.29
27.00
11.47
-2.18
-15.36
-27.97
-38.89
-50.41
-60.57
-71.45
-83.32
-94.36
-103.78
-113.43
-123.35
-134.06
-144.46

0.60
0.58
0.57
0.54
0.52
0.50
0.47
0.44
0.37
0.31
0.24
0.19
0.14
0.11
0.09
0.12
0.18
0.25
0.31
0.37
0.44
0.50
0.56

-14.39
-20.00
-26.48
-39.05
-45.00
-50.83
-61.71
-71.87
-89.81
-107.23
-125.21
-145.42
-168.81
158.79
118.59
75.36
46.94
27.91
7.94
-8.87
-23.42
-32.96
-44.64

25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41

ATF-35143 Typical Noise Parameters


VDS = 3 V, IDS = 15 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.11
0.15
0.16
0.21
0.24
0.26
0.31
0.37
0.47
0.58
0.68
0.79
0.89
1.00
1.10

0.86
0.81
0.80
0.73
0.69
0.66
0.60
0.55
0.46
0.40
0.36
0.33
0.32
0.32
0.33

Ang.

Rn/50
-

Ga
dB

3.5
12.1
14.3
25.1
31.6
35.9
47.2
59.4
86.0
115.4
146.8
179.8
-146.1
-111.5
-76.8

0.17
0.16
0.16
0.15
0.14
0.20
0.17
0.15
0.11
0.07
0.05
0.05
0.07
0.13
0.22

21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
8.8

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20

MSG

15
10

MAG

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

11

ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.96
0.93
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.54
0.54
0.55
0.59
0.63
0.67
0.71
0.74
0.77
0.82
0.82
0.85
0.87

-21.01
-32.39
-42.42
-61.18
-70.01
-78.57
-95.09
-111.30
-143.48
-174.00
157.98
130.06
105.20
82.53
63.18
44.96
26.64
7.94
-5.53
-16.02
-28.09
-40.02
-55.63

18.45
18.29
18.03
17.42
17.09
16.74
16.03
15.32
13.93
12.65
11.50
10.42
9.42
8.39
7.49
6.56
5.58
4.46
3.36
2.33
1.25
0.23
-0.85

8.36
8.21
7.97
7.43
7.15
6.87
6.33
5.83
4.97
4.29
3.76
3.32
2.96
2.63
2.37
2.13
1.90
1.67
1.47
1.31
1.16
1.03
0.91

163.08
153.62
145.49
130.11
122.91
116.00
102.87
90.60
68.04
47.37
28.09
9.32
-8.66
-26.26
-43.25
-60.82
-78.23
-95.07
-110.42
-125.79
-141.72
-156.00
-171.48

-33.98
-30.46
-28.40
-25.35
-24.44
-23.61
-22.38
-21.41
-20.26
-19.58
-19.02
-18.64
-18.34
-18.06
-17.79
-17.52
-17.46
-17.65
-17.86
-17.99
-18.06
-18.06
-18.49

0.020
0.030
0.038
0.054
0.060
0.066
0.076
0.085
0.097
0.105
0.112
0.117
0.121
0.125
0.129
0.133
0.134
0.131
0.128
0.126
0.125
0.125
0.119

76.89
69.94
64.80
54.32
49.77
45.15
36.87
29.08
14.96
2.38
-10.00
-22.21
-32.79
-44.11
-54.57
-66.16
-78.18
-89.74
-99.72
-109.60
-120.39
-131.03
-141.69

0.53
0.51
0.50
0.47
0.45
0.43
0.40
0.37
0.31
0.25
0.19
0.14
0.11
0.09
0.09
0.14
0.20
0.27
0.34
0.39
0.46
0.51
0.57

-15.23
-21.01
-27.72
-40.61
-46.56
-52.43
-63.37
-73.44
-91.21
-108.94
-128.04
-151.53
179.40
138.30
95.15
62.17
39.86
23.41
5.08
-11.42
-25.74
-35.29
-46.81

26.21
24.36
23.22
21.39
20.72
20.17
19.21
18.36
17.10
16.11
15.26
13.78
12.10
11.00
10.36
9.76
9.05
8.14
7.40
7.41
6.44
6.19
5.71

ATF-35143 Typical Noise Parameters


VDS = 3 V, IDS = 30 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.11
0.16
0.17
0.23
0.27
0.28
0.35
0.41
0.53
0.66
0.79
0.91
1.04
1.17
1.29

0.87
0.81
0.79
0.72
0.68
0.65
0.59
0.53
0.43
0.37
0.33
0.31
0.31
0.33
0.38

Ang.

Rn/50
-

Ga
dB

3.5
12.5
14.7
25.9
32.6
37.1
49.3
62.5
91.6
123.4
157.1
-168.3
-133.7
-100.0
-68.1

0.18
0.17
0.17
0.16
0.15
0.15
0.14
0.12
0.09
0.07
0.05
0.06
0.10
0.17
0.28

21.6
20.5
20.2
18.9
18.3
17.9
17.0
16.3
14.9
13.6
12.4
11.4
10.6
9.9
9.3

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

20

MSG

15
MAG

10

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

12

ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.71
0.62
0.57
0.55
0.55
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.85
0.86

-21.11
-32.57
-42.70
-61.55
-70.46
-79.07
-95.78
-112.14
-144.46
-174.93
157.13
129.56
104.96
82.47
63.23
45.01
26.69
8.00
-5.46
-16.18
-28.39
-40.51
-56.36

18.54
18.38
18.13
17.53
17.20
16.84
16.14
15.43
14.04
12.76
11.61
10.54
9.55
8.53
7.64
6.74
5.79
4.71
3.64
2.65
1.62
0.64
-0.44

8.45
8.30
8.07
7.53
7.24
6.95
6.41
5.91
5.03
4.34
3.81
3.37
3.00
2.67
2.41
2.17
1.95
1.72
1.52
1.36
1.21
1.08
0.95

163.20
153.72
145.56
130.19
123.00
116.04
102.91
90.63
68.03
47.35
28.07
9.35
-8.62
-26.19
-43.13
-60.63
-78.09
-95.00
-110.50
-126.04
-142.14
-156.61
-172.55

-33.98
-30.75
-28.64
-25.68
-24.58
-23.88
-22.62
-21.72
-20.72
-20.00
-19.49
-19.25
-18.94
-18.79
-18.49
-18.27
-18.13
-18.27
-18.42
-18.49
-18.49
-18.49
-18.86

0.020
0.029
0.037
0.052
0.059
0.064
0.074
0.082
0.092
0.100
0.106
0.109
0.113
0.115
0.119
0.122
0.124
0.122
0.120
0.119
0.119
0.119
0.114

77.63
70.15
64.68
53.94
49.29
44.64
36.30
28.32
13.98
1.12
-11.07
-23.07
-33.33
-44.34
-54.44
-65.68
-77.35
-88.59
-98.13
-108.03
-118.41
-129.54
-140.19

0.56
0.54
0.53
0.50
0.48
0.46
0.43
0.40
0.34
0.28
0.22
0.17
0.13
0.09
0.07
0.09
0.15
0.22
0.28
0.34
0.40
0.46
0.52

-14.66
-20.35
-26.91
-39.45
-45.29
-50.94
-61.54
-71.17
-87.95
-104.23
-120.69
-139.29
-160.54
169.67
128.74
78.47
47.96
28.53
8.38
-8.46
-22.93
-32.29
-43.97

26.26
24.55
23.38
21.61
20.90
20.36
19.38
18.58
17.38
16.38
15.55
14.19
12.47
11.33
10.70
10.10
9.40
8.47
7.69
7.76
6.75
6.53
6.00

ATF-35143 Typical Noise Parameters


VDS = 4 V, IDS = 30 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.10
0.14
0.16
0.21
0.25
0.28
0.33
0.38
0.49
0.62
0.74
0.87
0.99
1.11
1.24

0.90
0.85
0.83
0.77
0.73
0.70
0.64
0.58
0.48
0.40
0.35
0.32
0.31
0.34
0.39

Ang.

Rn/50
-

Ga
dB

3.5
12.5
14.7
25.9
32.6
37.1
49.1
62.0
90.3
121.2
154.0
-172.2
-138.0
-104.2
-71.6

0.22
0.21
0.20
0.18
0.17
0.17
0.15
0.14
0.10
0.07
0.05
0.06
0.09
0.15
0.26

20.7
19.7
19.5
18.4
17.8
17.5
16.7
16.0
14.7
13.5
12.5
11.5
10.7
10.0
9.5

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

MSG

20
15
MAG

10

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

13

ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA


Freq.
GHz

Mag.

S11
Ang.

dB

S21
Mag.

Ang.

dB

S12
Mag.

Ang.

Mag.

S22
Ang.

MSG/MAG
dB

0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00

0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.57
0.55
0.55
0.57
0.60
0.64
0.69
0.72
0.75
0.78
0.83
0.84
0.87
0.88

-21.27
-32.77
-42.95
-61.92
-70.88
-79.55
-96.36
-112.86
-145.47
-176.15
155.85
128.25
103.61
81.11
62.01
43.90
25.78
7.31
-6.12
-16.62
-28.78
-40.91
-56.66

18.15
17.99
17.74
17.13
16.79
16.45
15.74
15.03
13.64
12.35
11.21
10.14
9.16
8.14
7.25
6.37
5.43
4.37
3.30
2.29
1.25
0.21
-0.92

8.09
7.94
7.71
7.19
6.91
6.64
6.12
5.64
4.81
4.15
3.64
3.21
2.87
2.55
2.30
2.08
1.87
1.65
1.46
1.30
1.16
1.03
0.90

163.09
153.59
145.40
129.98
122.76
115.80
102.60
90.26
67.52
46.76
27.45
8.68
-9.34
-27.02
-44.01
-61.57
-79.17
-96.36
-112.19
-127.94
-144.27
-159.19
-175.28

-34.89
-31.70
-29.37
-26.56
-25.51
-24.73
-23.48
-22.62
-21.51
-20.82
-20.26
-19.83
-19.41
-19.09
-18.71
-18.27
-17.92
-17.92
-17.92
-17.86
-17.79
-17.79
-17.99

0.018
0.026
0.034
0.047
0.053
0.058
0.067
0.074
0.084
0.091
0.097
0.102
0.107
0.111
0.116
0.122
0.127
0.127
0.127
0.128
0.129
0.129
0.126

77.28
70.40
65.05
55.14
50.40
46.34
38.10
30.61
17.18
5.47
-5.83
-17.10
-26.34
-36.93
-46.43
-57.09
-68.92
-80.43
-90.26
-100.79
-112.14
-123.71
-134.88

0.54
0.53
0.51
0.48
0.47
0.45
0.42
0.39
0.34
0.29
0.24
0.19
0.15
0.11
0.07
0.06
0.10
0.18
0.25
0.31
0.39
0.46
0.52

-13.50
-18.54
-24.50
-35.90
-41.17
-46.33
-55.86
-64.53
-79.32
-93.48
-107.07
-121.43
-137.04
-156.16
178.65
113.63
60.75
35.69
13.24
-4.12
-19.12
-28.89
-40.92

26.52
24.83
23.55
21.84
21.15
20.59
19.61
18.82
17.58
16.59
15.74
13.17
11.94
10.99
10.38
9.88
9.26
8.35
7.57
7.78
6.73
6.65
6.06

ATF-35143 Typical Noise Parameters


VDS = 4 V, IDS = 60 mA

30

Fmin
dB

Mag.

0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0

0.22
0.30
0.32
0.42
0.48
0.52
0.63
0.73
0.94
1.15
1.35
1.56
1.77
1.98
2.18

0.84
0.78
0.77
0.70
0.65
0.63
0.56
0.51
0.44
0.40
0.39
0.40
0.43
0.47
0.53

Ang.

Rn/50
-

Ga
dB

4.4
15.6
18.4
32.4
40.8
46.4
61.0
76.6
109.9
144.8
-179.8
-145.5
-113.7
-85.6
-62.6

0.29
0.29
0.28
0.26
0.25
0.24
0.21
0.19
0.13
0.09
0.08
0.13
0.26
0.48
0.79

22.5
21.3
21.0
19.8
19.2
18.8
17.8
17.0
15.5
14.1
12.9
11.9
11.0
10.3
9.8

25
MSG/MAG and S21 (dB)

opt

Freq.
GHz

MSG

20
15
MAG

10

S21

5
0
-5
0

10

15

20

FREQUENCY (GHz)

Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.

Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

14

Noise Parameter Applications Information


Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz have been
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these
measurements, a true Fmin is calculated. Fmin represents
the true minimum noise figure of the device when the
device is presented with an impedance matching network
that transforms the source impedance, typically 50, to
an impedance represented by the reflection coefficient
o. The designer must design a matching network that
will present o to the device with minimal associated
circuit losses. The noise figure of the completed amplifier
is equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when the
device is presented with o. If the reflection coefficient
of the matching network is other than o, then the noise
figure of the device will be greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
Zo

|s o | 2
(|1 + o| 2)(1 - s| 2)

Where Rn /Zo is the normalized noise resistance, o is

15

the optimum reflection coefficient required to produce


Fmin and s is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50 is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB Fmin of the device creating an amplifier noise figure
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their effect on amplifier
noise figure is covered in Avago Application 1085.

ATF-35143 SC-70 4 Lead, High Frequency Model


Optimized for 0.1 6.0 GHz
R

EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L

R=0.1 OH
LOSSYL
L=Lb
R=Rb
SOURCE

L=Lb
R=Rb

L=Lc

LOSSYL

LOSSYL

GATE_IN

L=Lb
R=Rb

L=La *.5
C=Cb

C=Ca
G

L
SOURCE
L=La

LOSSYL

LOSSYL

DRAIN_OUT

L=Lb
R=Rb

L=Lb
R=Rb

L=Ld

This model can be used as a design tool. It has been tested


on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.

ATF-35143 Die Model


MESFET MODEL *
* STATZMODEL
= FET
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7

Gate model

Parasitics

DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF

Breakdown

RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc

GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=

Noise
FNC=01e+6
R=.17
P=.65
C=.2

Mo de l scal fa c t or s ( W = FET widt h in m ic r ons )


XX

EQUATION Cds = 0. 01 * W / 200


EQUATION Beta= 0. 06 * W / 200
EQUATION Rd= 200/ W
NFETMESFET
G

XX

EQUATION Rs=. 5 * 200/ W


EQUATION Cgs = 0. 2 * W / 200
EQUATION Cgd= 0. 04 * W / 200
EQUATION Lg = 0. 03 * 200/ W

16

S
XX

EQUATION L d=0. 03 * 200/ W


EQUATION Ls= 0. 01 * 200/ W
EQUATION Rc=500 * 200/ W

MODEL=FET

W=400 m

Part Number Ordering Information


Part Number

No. of
Devices

Container

ATF-35143-TR1G

3000

7 Reel

ATF-35143-TR2G

10000

13 Reel

ATF-35143-BLKG

100

antistatic bag

Package Dimensions
SC-70 4L/SOT-343

Recommended PCB Pad Layout for


Avagos SC70 4L/SOT-343 Products

1.30 (.051)
BSC

1.30
0.051
1.00
0.039

HE

2.00
0.079

0.60
0.024

1.15 (.045) BSC

0.9
0.035

b1
1.15
0.045

Dimensions in

A2

A1

DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L

17

MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10

MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46

NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.

mm
inches

Device Orientation
REEL
TOP VIEW

END VIEW

4 mm

CARRIER
TAPE

8 mm

5PX

5PX

5PX

5PX

USER
FEED
DIRECTION
COVER TAPE

Tape Dimensions and Product Orientation For Outline 4T


P

P2

D
P0

F
W
C

D1
t1 (CARRIER TAPE THICKNESS)

Tt (COVER TAPE THICKNESS)

K0

10 MAX.

A0

DESCRIPTION

10 MAX.

B0

SYMBOL

SIZE (mm)

SIZE (INCHES)

CAVITY

LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER

A0
B0
K0
P
D1

2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25

0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010

PERFORATION

DIAMETER
PITCH
POSITION

D
P0
E

1.55 0.10
4.00 0.10
1.75 0.10

0.061 + 0.002
0.157 0.004
0.069 0.004

CARRIER TAPE

WIDTH
THICKNESS

W
t1

8.00 + 0.30 - 0.10


0.254 0.02

0.315 + 0.012
0.0100 0.0008

COVER TAPE

WIDTH
TAPE THICKNESS

C
Tt

5.40 0.10
0.062 0.001

0.205 + 0.004
0.0025 0.0004

DISTANCE

CAVITY TO PERFORATION
(WIDTH DIRECTION)

3.50 0.05

0.138 0.002

CAVITY TO PERFORATION
(LENGTH DIRECTION)

P2

2.00 0.05

0.079 0.002

For product information and a complete list of distributors, please go to our web site:

www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN
AV02-1416EN - June 8, 2012

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