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Tunnel diode is the p-n junction device that exhibits negative resistance. That means when the voltage is increased the current through it decreases.
Esaki diodes was named after Leo Esaki, who in 1973 received the Nobel Prize in Physics for discovering the electron tunneling effect used in these diodes. Esaki reported the first paper on tunnel diodes in Physical Review in 1958
Tunnel Diode
Before contact
After contact
E CSiO
E CSiO
E CSi
E CSi
E CSi
E CSi
E VSi
E VSiO
E VSi
2
E VSi
E VSiO
E VSi
2
Si
SiO2
Si
Si
SiO2
Si
E=EB
Electron with energy less than EB cannot pass the barrier
E=0
Si
SiO2
Si
E=EB
E=EB
E=0
Si
SiO2
Si
Si
SiO2
Si 4
Newtonian Mechanics
Quantum Mechanics
EC
EV
EV
EC
EF
EV 6
EC
Step 3: With a larger voltage the energy of the majority of electrons in the n-region is equal to that of the empty states (holes) in the valence band of p-region; this will produce maximum tunneling current
EC
Step 4: As the forward bias continues to increase, the number of electrons in the n side that are directly opposite to the empty states in the valence band (in terms of their energy) decrease. Therefore decrease in the tunneling current will start.
EC
Step 5: As more forward voltage is applied, the tunneling current drops to zero. But the regular diode forward current due to electron hole injection increases due to lower potential barrier.
EC
Step 6: With further voltage increase, the tunnel diode I-V characteristic is similar to that of a regular p-n diode.
EC
EV 11
In this case the, electrons in the valence band of the p side tunnel directly towards the empty states present in the conduction band of the n side creating large tunneling current which increases with the application of reverse voltage. The TD reverse I-V is similar to the Zener diode with nearly zero breakdown voltage.
EC
EV
12
NDR region
Typical Tunnel Diode (TD) I-V characteristic has two distinct features: (1) it is STRONGLY non-linear (compare to the resistor I-V). Current - Voltage relationships for TDs cannot be described using the Ohms law (2) it has a negative differential resistance (NDR) region
13
peak
valley
I diode
V I s exp V th
Iv Vv Vp
14
I tun
V m V = exp R0 V0
Ip Iv
peak
valley
| Rd max
1+ m exp m | = R0 m
Vv Vp
1 m V p = V0 m
15
peak
I excess
V Vv V = exp V Rv ex
valley
Ip Iv Vv Vp
Iexcess is an additional tunneling current related to parasitic tunneling via impurities. This current usually determines the minimum (valley) current, Iv Rv and Vex are the empirical parameters; in high-quality diodes, Rv >> R0. Vex = 1..5 V
16
Tunnel Diode differential resistance is NEGATIVE in the voltage range 100 mV 200 mV
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+ VS
Power = Voltage x Current = I2 R If current direction is from - toward +, then R =V/I is negative; For R<0, P <0, Positive power means energy dissipation (e.g. conversion into the Joule heat); Negative power corresponds to the power GENERATION (Energy supply);
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V V I I
Rd = cot ( )
V V
V V For linear (Ohmic) components, R = Rd. For many semiconductor devices, R Rd: I
I Rd < R V
I Rd << R
2 1
Rd2 < 0 TD
V
19
VS -t/(RC) i (t ) = e R
i R>0 R<0 t t
20
Rd us
RL R
Cd
Rd us
RL R
LC
The resonant circuit with NDR can oscillate. Maximum frequency of the TD-oscillator is limited by the characteristic tunneling time:
-0.8 -1
5 4 3 2 1 0 -1 0 -2 -3 -4 -5 -6 1 2 3 4 5 6 7 8 9
Tunneling time in TDs is extremely small: << 1 ps FMAX > 100 GHz
22
After: M. Reddy et.al, IEEE ELECTRON DEVICE LETTERS, VOL. 18, NO. 5, MAY 1997
Vs 1 I = Vd + R R
y = mx + c
X axis intercept,Vs
y V s
R slope = 1
Y axis intercept, c =
Slope, m = 1
Vs
Vs
x
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Vs = Vd + I R
Vs 1 I = Vd + R R
In the load line equation, I is the resistor current when the voltage across the diode is Vd On the other hand, when the voltage across the diode is Vd, the diode current is given by the diode I-V curve For example, when the diode voltage is Vd1 the diode current is Id1 However, in this circuit, Id must be equal IR. Hence the actual operating point is given by the load line I-V intercept. I
Vd
Vs
Vs R slope = 1
Vs
V
25
Vd=0.78V
26
R= 500
R= 750
R= 1000
28
Vs= 1V
Vs=2V
Vs=3V
29
0.1 0.2 0.3 0.4 0.5 0.6 0.7 Example 1: Vs = 0.7 V; R = 100 ; max = 0.7V/100 = 7 mA The circuit has three possible operating points. Point 2 is typically unstable (depending on parasitic L and C components. The circuit will operate at the point 1 or point 3 depending on the history. Example 2: Vs = 0.3 V; R 10 ; max 30 mA The circuit has only one operating point - point 4. The total differential resistance is NEGATIVE (because R < |Rd|). Depending on the L and C components, the circuit can be stable (amplifier) or unstable (oscillator)
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