TIP32 Series(TIP32/32A/32B/32C)

TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
Complement to TIP31/31A/31B/31C

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : TIP32 : TIP32A : TIP32B : TIP32C Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 -100 -5 -3 -5 -3 40 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage : TIP32 : TIP32A : TIP32B : TIP32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP32 : TIP32A : TIP32B : TIP32C Collector Cut-off Current : TIP32/32A : TIP32B/32C Collector Cut-off Current : TIP32 : TIP32A : TIP32B : TIP32C IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE = - 40V, VEB = 0 VCE = - 60V, VEB = 0 VCE = - 80V, VEB = 0 VCE = - 100V, VCE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3A, IB = - 375mA VCE = - 4V, IC = - 3A VCE = - 10V, IC = - 500mA 3.0 25 10 - 200 - 200 - 200 - 200 -1 50 - 1.2 - 1.8 V V MHz
Rev. A, February 2000

Test Condition IC = - 30mA, IB = 0

Min. -40 -60 -80 -100

Max.

Units V V V V

ICEO

VCE = - 30V, IB = 0 VCE = - 60V, IB = 0

- 0.3 - 0.3

mA mA A A A A mA

ICES

* Pulse Test: PW300s, Duty Cycle2%

2000 Fairchild Semiconductor International

TIP32 Series(TIP32/32A/32B/32C)

Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000

-10000

VCE = -4V

IC /IB = 10

hFE, DC CURRENT GAIN

100

-1000

V BE(sat)

10

-100

V CE(sat)

1 -1 -10 -100 -1000 -10000

-10 -1 -10 -100 -1000 -10000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

-10

50

IC(MAX) (PULSE)

45

IC[A], COLLECTOR CURRENT

IC(MAX) (DC)

PC[W], POWER DISSIPATION

100 s

40 35 30 25 20 15 10 5 0

s 5m

s 1m

-1

TIP32 V CEO MAX. TIP32A V CEO MAX. TIP32B V CEO MAX. TIP32C V CEO MAX.
-0.1 -10 -100

25

50
o

75

100

125

150

175

200

VCE [V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area

Figure 4. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

TIP32 Series(TIP32/32A/32B/32C)

Package Demensions

TO-220
9.90 0.20
1.30 0.10 2.80 0.10

4.50 0.20

(8.70) 3.60 0.10

(1.70)

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )

0.50 0.05

+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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No Identification Needed

Full Production

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2000 Fairchild Semiconductor International

Rev. E