PZT158

Elektronische Bauelemente

NPN Transistor
Silicon Planar High Current Transistor
RoHS Compliant Product

Description
The PZT158 is designed for general purpose switching and amplifier applications.

SOT-223

Features
* 6Amps Continous Current, Up To 20Amps Peak Current * Excellent Gain Characteristic, Specified Up To 10Amps * Very Low Saturation Voltages
Date Code

REF. A C D E I H

1 5 8

B
o

Min. 6.70 2.90 0.02 0 0.60 0.25

Max. 7.30 3.10 0.10 10 0.80 0.35

REF. B J 1 2 3 4 5

MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)

Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction and Storage Temperature
o

Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80

Parameter

Value 150 60 6 6 20 3 -55~-150

Units V V V A W
O

IC PD TJ,Tstg

*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..

ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current

Symbol BVCBO *BVCEO BVEBO I CBO I CES I EBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Ton Toff

Min 150 60 6 100 100 75 25 -

Typ. 200 130 45 45 1100

Max 50 50 10 50 100 170 375 1.2 1.15 300 -

Uni V V V nA nA nA

Test Conditions I C= 100A, I E=0 I C= 10mA, I B=0 I E= 100A, IC=0 VCB= 120V, I E=0 VCES=60V

Collector Saturation Voltage

Base Saturation Voltage Base-Emitter Voltage

DC Current Gain

Gain-Bandwidth Product Output Capacitance On-Time Off-Time

VEB= 6V, IC=0 I C= 100mA, I B= 5mA I C= 1A, I B= 50mA mV I C= 2A, I B= 50mA I C= 6A, I B= 300mA V I C= 6A, I B= 300mA V VCE= 1V, I C= 6A VCE= 1V, I C= 10mA VCE= 1V, I C= 2A VCE= 1V, I C= 5A VCE= 1V, I C= 10A MH z VCE= 10V, IC= 100mA, , f=50MHz pF VCB= 10V, IE=0, f=1MHz nS VCC=10V,IC=1A,IB1=IB2=100mA

*Measured under pulse condition. Pulse width 300s, Duty Cycle 2% Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

PZT158
Elektronische Bauelemente

NPN Transistor
Silicon Planar High Current Transistor

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 2 of 2