2N5951 N-Channel RF Amplifier

September 2007

2N5951 N-Channel RF Amplifier

This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.

TO-92
1

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings* Ta=25C unless otherwise noted

Symbol
VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range

Parameter

Value
30 -30 10 -55 ~ 150

Units
V V mA C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

Ta=25C unless otherwise noted

Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
350 2.8 125 357

Units
mW mW/C C/W C/W

2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 1

www.fairchildsemi.com

2N5951 N-Channel RF Amplifier

Electrical Characteristics* Ta=25C unless otherwise noted

Symbol
Off Characteristics
V(BR)GSS IGSS VGS(off) VGS Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cut-off Voltage Gate-Source Forward Voltage IG = 1.0A, VDS = 0 VGS = 15V, VDS = 0, T = 25C T = 100C VDS = 15V, ID = 100nA VDS = 15V, ID = 700A -2 -1.3 -30 -1.0 -200 -5 -4.5 V nA V V

Parameter

Test Condition

Min.

Max.

Units

On Characteristics
*IDSS RDS(on) Zero-Gate Voltage Drain Current * Drain-Source On Resistance VDS = 15V, VGS = 0 ID = 400A, f = 1.0kHz 7 13 250 mA

Small Signal Characteristics

goss gos gis Ciss Crss en NF Common- Source Output Conductance Output Conductance Input Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage Noise Figure VDS = 15V, VGS = 0V, f = 1.0kHz VDS = 15V, VGS = 0V, f = 100MHz VDS = 15V, VGS = 0V, f = 100MHz VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 0V, f = 1.0kHz VDS = 15V, VGS = 0V, RG = 1.0m, f = 1.0kHz RG = 1.0k, f = 100MHz 75 100 250 6 2 100 2 5 / / / pF pF nV dB

* Pulse Test: Pulse Width 300s, Duty Cycle = 2%

2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 2

www.fairchildsemi.com

2N5951 N-Channel RF Amplifier

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 3

www.fairchildsemi.com