Transistors

2SC1317, 2SC1318
Silicon NPN epitaxial planar type
Unit: mm

For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 Features
Low collector-emitter saturation voltage VCE(sat) Complementary pair with 2SA0719 and 2SA0720
0.70.1

5.00.2

4.00.2

0.70.2 12.90.5

Absolute Maximum Ratings Ta = 25C

Parameter Collector-base voltage (Emitter open) 2SC1317 2SC1318 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating 30 60
2.30.2

Unit V

5.10.2
0.45+0.15 0.1 2.5+0.6 0.2 1 2 3 2.5+0.6 0.2 0.45+0.15 0.1

Collector-emitter voltage 2SC1317 (Base open) 2SC1318 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature

25 50 7 0.5 1 625 150 55 to +150

V A A mW C C

1: Emitter 2: Collector 3: Base TO-92-B1 Package

Electrical Characteristics Ta = 25C 3C

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SC1317 2SC1318 2SC1317 2SC1318 VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited)
*1

Symbol VCBO VCEO

Conditions IC = 10 A, IE = 0 IC = 10 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = 50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz

Min 30 60 25 50 7

Typ

Max

Unit V

Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1

V 0.1 A 0.35 1.1 200 6 15 0.60 1.5 V V MHz pF

85 40

340

VCE(sat) VBE(sat) fT Cob

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340

Publication date: March 2003

SJC00100CED

2SC1317, 2SC1318
PC Ta
800

IC VCE
0.8 0.7 Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.4 0.3 0.2 0.1 3 mA 2 mA 1 mA 0.8 0.7

IC I B
VCE = 10 V Ta = 25C

Collector power dissipation PC (mW)

Collector current IC (A)

0.5

Collector current IC (A)

20

600

0.6

0.6 0.5 0.4 0.3 0.2 0.1 0

400

200

40

80

120

160

12

16

10

Ambient temperature Ta (C)

Collector-emitter voltage VCE (V)

Base current IB (mA)

VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100

VBE(sat) IC
100

hFE IC
300 VCE = 10 V

Base-emitter saturation voltage VBE(sat) (V)

IC / IB = 10

IC / IB = 10

Forward current transfer ratio hFE

250 Ta = 75C 200 25C 25C

10

10

25C 1

Ta = 75C 25C

150

Ta = 75C 25C 25C

100

0.1

0.1

50

0.01 0.01

0.1

10

0.01 0.01

0.1

10

0 0.01

0.1

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
240 VCB = 10 V Ta = 25C
12

Cob VCB
Collector-emitter voltage (V) (Resistor between B and E) VCER
IE = 0 f = 1 MHz Ta = 25C

VCER RBE
120 IC = 2 mA Ta = 25C 100

Transition frequency fT (MHz)

200

10

160

80

120

60 2SC1318 40 2SC1317 20

80

40

0 1

10

100

0
1 10 100

10

100

1 000

Emitter current IE (mA)

Collector-base voltage VCB (V)

Base-emitter resistance RBE (k)

SJC00100CED

2SC1317, 2SC1318
ICEO Ta
104 VCE = 10 V
10

Safe operation area

Single pulse Ta = 25C ICP IC t=1s 0.1 DC t = 10 ms

102

10

Collector current IC (A)

0 40 80 120 160 200

103

ICEO (Ta) ICEO (Ta = 25C)

0.01

0.001 0.1

10

100

Ambient temperature Ta (C)

Collector-emitter voltage VCE (V)

SJC00100CED

Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

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