Datashet Automotriz

SANKEN ELECTRIC CO.,LTD.
CAUTION / WARNING
The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the users written consent to the specifications is requested. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken. Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.
Contents
Examples of Use of Typical Products by Application
.............. 2
1 ICs
1-1. Regulator ICs Application Note
................................................................................ 7 ......................................................... 8 ...................................... 16
Dropper Type Regulator ICs
Dropper Type System Regulator ICs Switching Type Regulator ICs 1-2. Power Switch ICs High-side Power Switch ICs Low-side Switch ICs 1-3. Motor Driver ICs Stepper-motor Driver ICs DC Motor Driver ICs 1-4. HID Lamp Driver ICs 1-5. Custom ICs
................................................... 22
...................................................... 24 ...................................................... 50
............................................................ 56
...................................................................... 60 ..................................................................... 64
....................................................................................... 76
2 Discretes
2-1. Transistors 2-1-1. Transistors 2-2. MOS FETs 2-2-1. MOS FETs 2-3. Thyristors 2-3-1. Reverse Conducting Thyristors 2-4. Diodes 2-4-1. Alternator Diodes
........................................................... 127 ................................ 128 .............................. 125 ......................................................................... 108 ............................................................. 117 ............................................................................ 80 ............................................................... 96
2-1-2. Transistor Arrays
2-2-2. MOS FET Arrays
2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes 2-4-4. General-purpose Diodes
..................................................... 129 ............................................ 130
3 LEDs
3-1. Uni-Color LED Lamps 3-2. Bi-Color LED Lamps 3-3. Surface Mount LEDs 3-5. Ultraviolet LEDs
................................................................ 134 .................................................................. 137 .................................................................. 138
3-4. Infrared LEDs .................................................................................. 140

............................................................................ 141 .................................................................... 142
3-6. Multi-chip Modules
Part Number Index in Alphanumeric Order
......................................... 147
Examples of Use of Typical Products by Application

Throttle System
Motor Driver ICs (p.60 and after) DC Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.
SI-5300 / SPF7301
Driver Transistor Arrays (p.99) Motor H-bridge of NPN x 2 and PNP x 2 in a single package.
Alternators
(p.127) Diodes Solder and press fit type as well as Zener type is available.
SG-9 / SG-10 / SG-14
With integrated back emf. clamp diode.
SLA8004
driver power transistors (p.68 and after) Motor With integrated back emf. clamp diode.
2SA1568 / 2SC4065
ICs Regulator Custom-made (contact our sales reps.)
Fuel Injectors
transistors (p.84 and after) Injector Transistors and MOS FETs are available in discretes and arrays in
various packages.
2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103
Headlamps
lamp driver ICs (p.64 and after) HID High-voltage controller IC and 4-circuit power stage in a
single package. Direct drive from CPU.
SLA2402M / SLA2403M / SMA2409M
for HID lamp ignition (p.125 and after) Thyristors Best suited to C-discharge SW element on high-voltage
primary side of an igniter. Integrates a reverse direction diode. High di/dt resistance
Ignition System
diodes for ignition (p.128) High-voltage Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN
TFC561D / TFC562D
FET arrays for driving HID lamps (p.122) MOS 4 circuits of N-ch MOS FETs of 450V/7A in a single package.
SMA5113
stepper-motor driver ICs for AFS (p.58 and after) 2-ph Low output saturation voltage, integrated recovery diode,
surface-mount.
2SD2141 / MN638S ICs Ignition Custom-made (contact our sales reps.)

Ignition transistors (p.89 and after)
SPF7211
Room Lamp
Multi-chip LED modules (p.142)

Car Navigation and Audio Power Steering
driver MOS FETs (p.108 and after) Motor Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.
Various LEDs (p.133)
2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851
Tail Lamps
LED Power Custom-made
(contact our sales reps.)
O2 sensor heater
driver MOS FETs (p.115) Heater Low ON resistor and integral gate protection
diode.
FKV460S
Transmission
solenoid drivers (high-side power switch ICs) (p.26 and after) AT Integral diagnostic function, surface-mount, 2- and 3-circuit types and other
diverse models.
ABS and VDC

driver MOS FETs (p.108 and after) Solenoid/motor Various packages from discretes to arrays. driver ICs (p.54) Solenoid/motor Surface-mount 4-circuit type with output voltage monitor. SPF5012 2SK3710 / FKV660S / SLA5027 / SDK08
Integral current detection resistor, current monitor output, surface-mount and

2-circuit types are also available.
SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M AT linear solenoid driver (high-side power switch ICs) (p.46 and after) SPF5017 / SPF5018
1 ICs
1-1. Regulator ICs
Application Note
.............................................. ....................
1-3. Motor Driver ICs

7 8
Stepper-motor Driver ICs SLA4708M (50V, 1.5A) SPF7211 (40V, 0.8A) DC Motor Driver ICs SI-5300 (40V, 5A) SPF7301 (36V, 7A)
.........................
56 56 58 60 60 62
Dropper Type Regulator ICs
...................................
SI-3001S (5V/1A, With Output ON/OFF Control) ... 8 SI-3003S (5V/0.8A, 3-terminal) ....................... 10 SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12 SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14 Dropper Type System Regulator ICs
..
..................................... .................................... ..................................... .....................................
16
SI-3322S (5V, Surface-mount) ........................ 16 SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18 SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20 Switching Type Regulator ICs SI-3201S (5V/3A)
...............
1-4. HID Lamp Driver ICs

SLA2402M (500V, 15A) .................................. 64 SLA2403M (500V, 7A) .................................... 68 SMA2409M (500V, 7A) ................................... 72
22 22
............................................
1-5. Custom ICs 1-2. Power Switch ICs

High-side Power Switch ICs
...................
.....................................
76
24
SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24 SI-5151S (With Diagnostic Function) .............. 26 SI-5152S (With Diagnostic Function) .............. 28 SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30 SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32 SI-5155S (With Diagnostic Function) .............. 34 SLA2501M (With Diagnostic Function, 3-circuits) 36 SLA2502M (With Diagnostic Function, 4-circuits) 38 SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40 SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42 SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44 SPF5017 (Surface-mount 2-circuit, current monitor output function) 46 SPF5018 (Surface-mount, current monitor output function) 48 Low-side Switch ICs
................................... ..........
50 50
SPF5002A (Surface-mount 4-circuits)
SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52 SPF5012 (Surface-mount 4-circuits with Output Monitor) 54
Application Note for Regulator ICs

Temperature and Reliability
Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation. generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments.
Setting DC Input Voltage

Observe the following precautions when setting the DC input voltage: VIN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. V IN (max) must not exceed the DC input voltage of the electrical characteristics.
Screw Torque
Screw torque should be between 0.588 to 0.686 [N m] (6.0 to 7.0 [kgf cm]).
Power Dissipation (PD)

1. Dropper Type
PD = IO [VIN (mean) - VO]
2. Switching Type
V PD = VO I O ( 100 - 1) - VF IO (1 - O ) VIN Efficiency depends on input/output conditions.
Refer to the efficiency characteristics.
Recommended silicone grease

Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.
Type G746 Suppliers Shin-Etsu Chemical Co., Ltd. GE Toshiba Silicones Co., Ltd. Dow Corning Toray Silicone Co., Ltd.
VO : Output voltage VIN : Input voltage IO : Output current
: Efficiency VF : Diode forward voltage
Heatsink Design
The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation P D (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is
YG6260 SC102
Others
This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage.
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
a b
2.6 0.1 (2.0)
(Ta = 25C)
0.950.15 (4.6) 0.85 0.1

+0.2
Parameter DC Input Voltage Output Control Terminal Voltage Output Current Power Dissipation
Symbol VIN VC IO PD1 PD2
Ratings 35 VIN
1 1.0 *
Unit V V A W W C C C C/W
Conditions
0.45 P1.70.7 4=6.80.7
+0.2 0.1
3.9 0.7
(4.3)
8.2 0.7
18 1.5 40 to +125 40 to +100 40 to +125 5.5
With infinite heatsink Stand-alone without heatsink

1 2 3 4 5
Junction Temperature Operating Temperature Storage Temperature Junction to Case Thermal Resistance Junction to Ambient-Air Thermal Resistance
Tj TOP Tstg
j-c
1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN
a: Part No. b: Lot No.
(Forming No. 1101)
j-a
66.7
C/W
Stand-alone without heatsink
Equivalent Circuit Diagram

5 VIN
R1 MIC Tr1
(8.0)
5.0 0.6
Absolute Maximum Ratings
(17.9)
Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of 2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package
External Dimensions (unit: mm)

3.2 0.2 0.5 10.00.2 4.2 0.2 2.8 0.2 4.00.2
7.90.2 16.90.3
3 VO 4 VO sense
R3
Electrical Characteristics
Ratings Parameter Input Voltage Output Voltage Dropout Voltage Line Regulation Load Regulation Output Voltage Temperature Coefficient Ripple Rejection Quiescent Circuit Current Overcurrent Protection Starting Current Vc Terminal
Output ON
( Tj= 25C, VIN =14V unless otherwise specified)

a
Symbol VIN VO VDIF
min 6 *2 4.90
typ
max 30 *1
Unit V V V V mV mV mV/C dB
Conditions
e d
2
f
R4
b c
R2
5.00
5.10 0.5 1.0
VIN =12 to 16V, IO = 0.4A IO 0.4A IO 1.0A IO =0.4A, VIN = 6 to 16V IO = 0 to 0.4A IO =5mA, Ta = 10 to +100C f =100 to 120Hz IO = 0A
Vc (on/off)
VO LINE VO LOAD VO /T RREJ Iq I S1 VC, IH VC, IL I C, IH I C, IL

3 1.2 * 4
30 100 0.5 54 3 10
1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection
e : Drive circuit f : Error amplifier g : Reference voltage
Standard Circuit Diagram

D1
mA A V
2.0 *
5
OPEN
Control Voltage
Output OFF Output ON
0.8 20 0.3
V A mA VC = 2.7V VC = 0.4V
SI-3001S
2 4 1
+
DC input +
Control Current
Output OFF
VIN
C1
C2
CO
DC output
VO
Notes: *1. Since PD (max) = ( VIN VO) IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta -PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to 5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible.
Co : Output capacitor (47 to 100 F, 50V) C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. Protection diode. Required as protection against reverse D1 : biasing between input and output. (Recommended diode: Sanken EU2Z.)
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Io vs VDIF Characteristicsc
0.5
Line Regulation
5.1
Load Regulation
5.1 V IN = 30 ( V) 12 to 16 ( V) 5.5 ( V) 5.0
Dropout voltage VDIF (V)
0.4
Output voltage VO (V)
0.3
5.0
0.2
0.1 4.9 0 0
4.9 0
0.5
Output current IO (A)
1.0
10
15
20
25
30
IO = 0 (A) 0.4 (A) 1.0 (A)
0.5
1.0
Input voltage VIN (V)
Output Voltage Temperature Characteristics

5.1
Rise Characteristics
7 6
Quiescent Circuit Current

15
Io = 0 (A)
Output voltage VO (V) Load resistance Quiescent current lq (mA)
16(V) 5.0
12(V)
VIN = 30(V)
5 4 3
10
14(V) 5.5(V)
4.9 0 --50 0 50
VIN IOUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A)
12 ()
2 1 0 0 2 4 6 8 10
5 ()
100
150
0 0 2 4 6 8 10
Ambient temperature Ta (C)
ON/OFF Control Characteristics

6 5
Overcurrent Protection Characteristics

6
Thermal Protection Characteristics

6
I o = 0 (A) VIN = 14 (V)

5
Io = 0 (A) VIN = 6 (V)

5
10 (V)
4 3 2 1 0 0 1 2 3 4 5
Output ON/OFF control voltage VC (V)
4 3 2
30 (V)
4 3 2 1 0 0 125
5.5 (V) 20 (V) 14 (V)
ON
OFF
1 0 0 0.5 1.0 1.5 2.0 2.5 3.0

130
135
140
145
150
155

Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
Overvoltage Protection Characteristics

6 5
Ta PD Characteristics
20
With infinite heatsink Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.
Power Dissipation PD (W)
15
2002002mm (2.3C/W)
4 3 2 1
10 1001002mm (5.2C/W)
75752mm (7.6C/W)
5
Without heatsink
0 10
20
30
40
50
0 --30 20
20
40
60
80
100
Operating temperature Ta (C)
Dropper Type Regulator ICs [3-terminal] SI-3003S
Features
3-terminal IC regulator with 0.8A output current Voltage accuracy of 2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package

4.2 0.2 3.2 0.2 10 0.2 2.8 0.2
16.9 0.3
7.9 0.2 40.2 0.5

a

Parameter DC input voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a
2 max
2.6 0.15
(Ta =25C)
Symbol VIN IO PD1
Ratings 35 0.8 * 22 1.8 40 to +150 40 to +100 40 to +150 5.5 66.7

2
Unit V
Conditions
0.94 0.15
(13.5)
A W W C C C C/W C/W Stand-alone without heatsink With infinite heatsink Stand-alone without heatsink
0.85 0.1
+0.2
4P1.7 0.15 = 6.8 0.15

(root dimensions)
0.45 0.1
+0.2
1 2 3 4 5
Terminal connections 1. VIN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. VO (Forming No. 1115)
Parameter Input voltage Output voltage Dropout voltage Line regulation Load regulation Ripple rejection Quiescent circuit current Overcurrent protection starting current Symbol VIN VO VDIF Ratings min 6*2 4.90 5.00 typ
(Tj=25C, VIN =14V, IO =0.5A unless otherwise specified)
max 30 * 1 5.10 0.5 1.0
Unit V V V V mV mV dB IO 0.5A IO 0.8A
Conditions
VIN 1 OCP TSD DRIVE DET ERR REF 5
VO
VO LINE VO LOAD RREJ Iq IS1 0.9 *

3
30 100 54 3 10
VIN =8 to 16V IO =0 to 0.5A f=100 to 120Hz IO =0A
mA A
3 GND
Notes: *1. Since P D (max) = (VIN VO) IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to 5%.

D1 *2
1
DC input + *1
SI-3003S
3
5 4 N.C +
DC output
VIN
C1
C2
N.C
CO
VO
Co : Output capacitor (47 to 100F, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)
10
Dropper Type Regulator ICs [3-terminal] SI-3003S
Io vs VDIF Characteristics
0.5
Line Regulation
5.1
Load Regulation
5.1
0.4
Dropout voltage VDIF (V) Output voltage VO (V) Output voltage VO (V)
0.3
5.0
IO =0A =0.2A =0.5A =0.8A IO=0.5, 0.8A =0.2A =0A
5.0
VIN =35V =25V =14V =6V
0.2
4.9
4.9
0.1
0 0 0.2 0.4 0.6 0.8

0 0 5 10 15 20 25 30 35
0 0 0.2 0.4 0.6 0.8

Output Voltage Temperature Characteristics

5.1
6 5
IO =0A =0.5A =0.8A
Circuit Current
250
200
Ground current lg (mA)
5.0
VIN / IO: 30V / 0A 14V / 0.5A 6V / 0.8A
4 3 2 1
150
IO=0.8A =0.5A =0.2A =0A
100
50
4.9 50
50
100
150
0 0 2 4 6 8 10
0 0 5 10 15 20 25 30 35

6 5

6
VIN =6V IO=5mA
25
With infinite heatsink With silicone grease Heatsink: aluminum
5
Power Dissipation PD (W) Output voltage VO (V)
20 200 200 2mm (2.3C/W) 15 100 100 2mm (5.2C/W) 10 75 75 2mm (7.6C/W) 5
Without heatsink
4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5

4 3 2 1 0 120
VIN =6V 14V 35V 25V
140
160
180
200
0 40
40
80
100

11
Dropper Type Regulator ICs [2-output] SI-3101S
Features
Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package

3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2
7.9 0.2 16.9 0.3
(2.0) 0.95 0.15 (4.6) 0.85 0.1

+0.2
2.6 0.1

Parameter DC input voltage Battery reverse connection Output control terminal voltage CH1 Output current CH2 Power Dissipation PD2 Junction Temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a
(Ta=25C)
VIN VINB VC IO1 IO2 PD1
40 13 * 6 VIN 0.07 * 0.4 * 1 18 1.5 40 to +125 40 to +115 40 to +125 5.5 66.7

1
V V V A A W W C C C C/W C/W Stand-alone without heatsink With infinite heatsink Stand-alone without heatsink
1 2 3 4 5
0.45 P1.7 0.7 4 = 6.80.7 3.9
+0.2 0.1
One minute
(4.3) 8.2 0.7
1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2
(Forming No. 1101)

VIN 1
OCP TSD DRIVE DET ERR REF
(8.0)
Symbol
Ratings
Unit
Conditions
5.0 0.6
(17.9)
VO1 4
Ratings Parameter Input voltage CH1 Output voltage CH2 Channel-channel voltage difference (VO1 VO2) Dropout voltage CH1 CH2 Line regulation CH1 CH2 Load regulation CH1 CH2 CH1 Ripple rejection CH2 Quiescent circuit current Overcurrent protection starting current Output control voltage
(Tj=25C, VIN =14V unless otherwise specified)
5 VO2
Symbol VIN VO1 VO2 VO VDIF1 VDIF2 VO LINE1 VO LINE2 VO LOAD1 VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL I CH I CL VOVP
min 6 *2 4.80 4.80 0.1
typ
max 35 * 1
Unit V V V V V V mV mV mV mV dB dB IO =0.05A IO =0.3A
Conditions
OCP DRIVE OVP DET ERR
5.00 5.00
5.20 5.20 0.1 1.0 1.0
2 VC
CONT
3 GND
IO1 =0 to 0.05A IO2 =0 to 0.3A IO1 0.05A IO2 0.4A VIN =6 to 18V, IO =0.05A VIN =6 to 18V, IO =0.3A IO1=0 to 0.05A IO2 =0 to 0.3A f =100 to 120Hz f =100 to 120Hz IO1=0A, VC =0V
10 10 30 40 54 54
30 30 70 70

D3 D2 1 D1 2 VC SI- 3101S 3 4 VO1 GND CO1 5 VO2 VIN
0.8
3 0.1 *
mA A A
+
CIN
+
CO2
CH1 CH2
Output ON
0.5 * 3 4.2 3.2 4.5 3.5 4.8 3.8 100 100 35 * 4
V V A A V VC =4.8V VC =3.2V
CO1 : CO2 : *1 CIN :
Output control current

Output OFF
Overvoltage protection starting voltage Thermal protection starting temperature
TTSD
130 * 5
Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)
Notes: *1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the TaPD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to 5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.
12
Line Regulation (1)
5.1
VC = 5 (V) IO2 = 0 (A)
Output voltage VO (V) Output voltage VO (V)
Line Regulation (2)

5.1
VC = 5 (V) I O1 = 0 (A)
Load Regulation (1)

5.1
VC = 5 (V) I O2 = 0 (A)
I O1 = 0mA 50mA
I O2 =
0A
0.3A
5.0
V IN = 6V 14V
5.0
22V
5.0
70mA
0.5A
4.9 0 0 5 10 15 20 25
4.9 0 0 5 10 15 20 25
4.9 0 0 10 20 30 40 50 60 70
Input voltage V IN (V)
Output current IO (mA)
Load Regulation (2)

5.1
VC = 5 (V) I O1 = 0 (A)
6

10
I O1 = 0 (A) Vc = 0 (V)
5 4 3 2 1
V IN = 6V,14V
Load resistor 100
5.0
22V
71.4
Quiescent current lq (mA)
4.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6

0 0 2 4 6 8 10
10
15
20

6 5
Output voltage VO2 (V)
Overcurrent Protection Characteristics (1)

6 5

6 5
4 3 2
V IN = 14V, 22V
4 3 2 1 0
IO2 = 0 (A) VC = 5 (V)
V IN = 6V 14V 22V
4.5V VIN = 6V 14V 22V
4 3 2 1 0
6V
4.5V
I O1 = 0 (A) VC = 5 (V)
OFF 1 0 0 1 2 3 4
ON
0.05
0.1
0.15
0.1
0.2 0.3 0.4
0.5 0.6 0.7 0.8
Output ON/OFF control voltage VC (V)

6 5

6
TaPD Characteristics
20
With infinite heatsink With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum
VIN = 6 (V) I O1 = I O2 = 5 (mA) 5

Power Dissipation PD (W) Output voltage VO (V)
4 3 2 1 0 0 130 140 150 160

4 3 2 1 IO1 = I O2 = 5 (mA) VC = 5 (V)
VO1 VO2
15
200 200 2mm (2.3C/W)
10 100 100 2mm (5.2C/W)

75 75 2mm (7.6C/W)
5
Without heatsink
0 10 20 30 40
0 --30 --20 0
20
40
60
80
100 115
13
Features
Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package

3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2
7.9 0.2 16.9 0.3
(2.0) 0.95 0.15 (4.6) 0.85 0.1

+0.2
2.6 0.1

Parameter DC input voltage Battery reverse connection Output control terminal voltage CH1 Output current CH2 Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a
(Ta=25C)
Symbol VIN VINB VC IO1 IO2 PD1
Ratings 35 13 * 6 VIN 0.04 * 1 0.1 * 1 22 1.8 40 to +150 40 to +105 40 to +150 5.5 66.7
Unit V V V A A
Conditions
0.45
+0.2 0.1
One minute
P1.7 0.7 4 = 6.8 0.7
3.9 0.7
(4.3)
8.2 0.7
W W C C C C/W C/W
With infinite heatsink Stand-alone without heatsink
1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2
(Forming No. 1101)

Stand-alone without heatsink
(8.0)
5.0 0.6
(17.9)
VIN 1
OCP
VO1 4
DET ERR REF
Parameter Input voltage CH1 Output voltage CH2 Channel-channel voltage difference (VO1 VO2) Dropout voltage CH1 CH2 CH1 Line regulation CH2 CH1 Load regulation CH2 CH1 Ripple rejection CH2 Quiescent circuit current Overcurrent protection starting current Output control voltage
(Tj = 25C, VIN = 14V unless otherwise specified)
TSD
Symbol VIN VO1 VO2 VO VDIF1 VDIF2 VO LINE1 VO LINE2 VO LOAD1 VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL I CH I CL VOVP
Ratings min 6 *2 4.80 4.80 0.1 5.00 5.00 typ max 30 * 1 5.20 5.20 0.1 1.0 1.0 10 10 30 40 54 54 0.8 0.06 * 0.15 * 4.2 3.2
3 3
Unit V V V V V V mV mV mV mV dB dB mA A A IO = 0.04A IO = 0.1A
Conditions
DRIVE
5 VO2
OCP DRIVE OVP DET ERR
IO1 =0 to 0.04A IO2 =0 to 0.1A IO1 0.04A IO2 0.1A VIN = 6 to 30V, IO = 0.04A VIN = 6 to 30V, IO = 0.1A IO1 = 0 to 0.04A IO2 = 0 to 0.1A f = 100 to 120Hz f = 100 to 120Hz IO1 = 0A, VC = 0V
2 VC
CONT
3 GND
50 50 70 70

D3 D2 1 D1 SI- 3102S 2 VC 3 4 VO1 GND CO1 5 VO2
CH1 CH2
Output ON
VIN
4.5 3.5
4.8 3.8 100
V V A A VC = 4.8V VC = 3.2V
+
CIN
Output control current

Output OFF
+
CO2
100 30 * 151 *
4
Overvoltage protection starting voltage Thermal protection starting temperature
V Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) CO1 : CO2 : *1 CIN :
TTSD
Notes: *1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the TaPD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to 5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.
14
Line Regulation (1)
5.10
VIN = VC IO2 = 5mA
Line Regulation (2)

5.10
VIN = VC IO1 = 5mA
Load Regulation (1)

5.10
VIN = VC
5.05
5.05
5.05
IO2 = 0A 50mA 100mA VIN = 6V 14V 30V
5.00
IO1 = 0A 20mA 40mA
5.00
5.00
4.95
4.95
4.95
4.90
4.90
4.90
4.85 0 5 10 15 20 25 30 35
4.85 0 5 10 15 20 25 30 35
4.85 0 10 20 30 40 50
Load Regulation (2)

5.10
VIN = VC
6 5
VIN = 6V,14V

12
VC = 0V IO1 = 0A
4 3 2 1 0
IO1 = 0A 20mA 40mA
Quiescent current lq (mA)
5.05
10 8 6 4 2 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35
Input voltage VIN (V) Input voltage VIN (V)
5.00
4.95
30V
4.90
4.85 0 20 40 60 80 100

6
VIN = 14V IO2 = 5mA

6
VIN = VC IO2 = 5mA

6
VIN = VC IO1 = 5mA
5
Output voltage VO2 (V) Output voltage VO1 (V)
5 4 3 2 1 0 0 1 2 3 4 5 6 0 20 40 60 80 100 120
Output ON/OFF control voltage VC (V) Output current IO (mA) Output voltage VO2 (V)
5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5

Output current IO2 (A)
4
OFF
3 2 1 0
ON
VIN = 6V 14V 30V
VIN = 6V 14V 30V

6
VIN = 6V IO1 = IO2 = 5mA

6
VIN = VC IO2 = 5mA
25
With infinite heatsink With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum
5
5
Power Dissipation PD (W) Output voltage VO (V) VO1
20
200 200 2mm (2.3C/W)
4 3 2 1 0 100
4 3
VO2
15
100 100 2mm (5.2C/W)
10
75 75 2mm (7.6C/W)
2 1 0 26
5
Without heatsink
120
140
180
200
220
240
28
30
32
34
36
38
0 40 20 0
20 40 60 80 100 120 140 160
Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
15
Dropper Type System Regulator ICs SI-3322S
Features
High accuracy output of 5V30mV Memory backup power supply 4V0.2V Power on reset function Supply voltage monitor function Watch dog timer CR not required for setting external time constant

Index area
SI-3322S Lot SKA

Lot
7.40 10.00 7.60 10.65
3 0.25 45 0.75
Adhesive surface
10.10 10.50 2.35 2.65
0.23 0.32

Parameter Symbol
VIN (1) Terminal voltage VIN (2) VSC, NMI, RESET, OUTE W/D, STBY Storage temperature Operating temperature Power dissipation Tstg Top PD 40 to +125 40 to +105 1.4 C C W Ta = 25C
IG. SW 47F + R2
0.33 0.51
0.10 0.30
0 to 8
0.40 1.27
Applicable terminals
BAI, VCC, VNMIC VS, NMIC, RSTTC, OUTE
Ratings
0.3 to 32
Unit
V
Conditions
1.27 BSC
Coplanarity (height difference among leads) 0.1mm max.
0.3 to 7
Standard Connection Diagram

+ R1 47F A/D converter, I/O circuit, etc.
120 6 5 4 VB 3 VS 2 VSC NMI STBY RESET 9
+ 68F VCC NMI STBY RESET AVCC
Ratings Parameter
VSC output voltage VS output voltage VS VSC voltage difference BAI input current VCC input current VB input current VS input current NMIC input current W/D input current RSTTC input current Lo NMI judge voltage Hysteresis Hi NMI output voltage Lo Hi STBY output voltage Lo Hi RESET output voltage Lo Hi OUTE output voltage Lo Hi OUTE output voltage Lo Standby release time Reset release time Reset cycle Reset period W/D signal stop detect period Reset signal output time Standby signal output time W/D fail judge frequency Out enable release time VTOL TST TRE TRC TRP TWS TNR TRS FFH TWE 5 60 40 20 10 80 10 2 40 50 5 10 10 75 50 25 12.5 0.6 20 90 60 30 15 V ms ms ms ms ms s s kHz ms VUOL VTOH VS0.5 0.6 V V VROL VUOH VS0.5 0.6 V V VSOL VROH VS0.5 0.6 V V VNOL VSOH VS0.5 0.6 V V
VNMIC VCC 1 BAI +
(Ta = 25C unless otherwise specified)
BATT
47F 8 GND
SI-3322S
15 12
Microcomputer
Symbol
VSC VS VS I BAI I CC IB IS I NMIC I W/D I RTC VNIL VN VNOH
min 3.8 4.97
typ 4 5
max 4.2 5.03 0.3 0.6 5 25 20
Unit
V V V mA mA mA mA mA mA mA V V V
Conditions
BAI = 4.2 to 16V, ISC = 0.2mA VCC = 5.2 to 16V, IO = 350mA VCC = 5.2V, ISC = 50mA BAI = 4.9 to 16V, ISC = 0.2mA VCC = 3 to 16V VCC = 3 to 16V VCC = BAI = 3 to 16V, ISC = 0mA VCC = BAI = 14V VCC = BAI = 14V VCC = BAI = 14V NMIC = 0V
VNMIC 6
NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND 13 11 10 16 14 OPEN or GND Logic circuit
R1, R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.
RSTTC: Normally open. GND connected when TRE is to be halved.
0.04 0.04 0.04 4.9 0.12 VS0.5
0.1 0.1 0.1 5
0.4 0.4 0.4 5.1 0.3
Circuit Block Diagram

+ VCC 5 VB 4 Start circuit + Current limit circuit VS 3 + + VSC 2
Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA
13 NMIC 11 OUTE GND 8 BAI 1
Main regulator
9 NMI + Backup regulator NMI judge circuit + Reference oscillation circuit STBY control circuit
Counter
15 STBY
OUTE control circuit
Frequency comparator
RESET control circuit
12 RESET
10 OUTE
16 W/D
14 RSTTC
Timing Chart
VCC VS VSC NMI STBY RESET OUTE OUTE W/D Power on HI or Lo W/D input stop W/D input start (microcomputer (microcomputer resets) runaway) Power off TWS TRC TWE TST TRE TRS TRP TNR 0V VNIL+VN VNIL (BAI=14V) 0V
Notes: The direction of current flowing into the IC is positive (+).
16
Dropper Type System Regulator ICs SI-3322S
VS Line Regulation
5.03 5.02 5.01 IO = 0A
VS Load Regulation
5.03 5.02 5.01
VS Rise Characteristics
6 5 IO = 0A 4
VS (V)
VS (V)
5 4.99 4.98 4.97 0.4A
5 4.99 4.98 4.97 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12V VCC = 5.2V
VS (V)
3 0.4A 2 1 0 0
10
15
20
25
10
VCC (V)
IO (A)
VCC (V)
VS Overcurrent Protection Characteristics

6 5 4
VCC Input Current

5
VB Input Current
20
No load
4 15
ICC (mA)
3 VCC = 7V 2 12V 1 0
I B (mA)
0 5 10 15 20
VS (V)
10
0.5
1.5
10
15
20
IO (A)
VCC (V)
VCC (V)
VS Input Current
20
VSC Rise Characteristics

5
VSC Overcurrent Protection Characteristics

6 5 4
No load
4 15
IS (mA)
VSC (V)
10
VSC (V)
3 2
5 1 1 0
10
15
20
10
15
20
10
VCC (V)
BAI (V)
ISC (A)
BAI Input Current

500
VS-VSC Voltage Difference

500
NMI Judge Voltage Characteristics

6 5 4
No load
400 400
VS (mV)
IBAI (A)
NMI (V)
300
300
3 2
200
200
100
100
1 0 4.5
0 0 5 10 15 20
20
40
60
80
100
120
4.7
4.9
5.1
5.3
5.5
BAI (V)
ISC (mA)
VCC (V)
17
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004
Features
Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1
Parameter
DC input voltage Output control terminal voltage Output current CH1 CH2
Symbol
VIN EN Io1 Io2 MODE W/D/C TC CK Vo1-fail RESET Tj Tstg j-c j-a
Ratings
13 to 35 40 0.3 to 35 40 0.4 0.2
Unit
V V A 400mS 400mS
Remarks
Reverse connection 1 min max.
1 1.270.25 0.4 0.05

+0.15
8 2.50.2
0.25 0.05
+0.15
MODE terminal input voltage W/D/C terminal input voltage TC terminal input voltage CK terminal input voltage Vo1-fail terminal output voltage Reset terminal output voltage Junction temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air)
0.3 to 7

40 to 150 40 to 150 4.1 38 C C C/W C/W With infinite heatsink With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18m)
Battery Vin EN D1 Vo1
SPF3004
Cin
Vo1 Vo1 fail
MODE Vo2
+
RESET W/D/C CK TC
Co1
Load
GND
Parameter
Input voltage CH1 Output voltage CH1 CH2 Dropout voltage CH1 CH1 CH2 CH1 CH2
Symbol
VIN Vo1 Vo1 Vo2 VDIF11 VDIF12 VDIF2 RREJ1 RREJ2 Iq IGND Is11 Is21 Is21 Is22 VENth
min Vo1+VDIF1 * 3 4.90 4.85 3.15
Ratings typ
5.00 5.00 3.30
D2
max 35 * 4 5.10 5.15 3.45 0.5 0.25 0.5
Unit
V
Conditions
VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = 40 to 125C VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = 40 to 150C VIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A
Rtc
+
Co2
Load
+
Ctc
Io1 = 0.4A Io1 = 0.2A, Tj = 25C Io2 = 0.2A f = 100 to 200Hz VIN = 16V, EN = 0V VIN = 35V, EN = 0V Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 2.8V Vo1 = 0V Vo2 = 0V Tj = 40 to 125C
Ripple rejection
Quiescent circuit current GND current
54 54 10 50 5 70 0.402 0.201 0.402 0.201 1.0 0.9
db 50 250 10 100 1.80 0.80 1.80 0.80 3.5 3.5 50 30 1.0 0.5 A mA mA A A V A V V V V V V V V V V S S S V
Cin: Capacitor (39 F) for oscillation prevention CO1: Output capacitor (39 F) CO2: Output capacitor (39 F) Tantalum capacitors are recommended especially for low temperatures. D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).
Overcurrent protection CH1 starting current CH2 CH1 Residual current at a short CH2
EN output control voltage
Timing Chart
Vin EN
Vo1thH Vo1thL EN (ON) operation EN (OFF) operation
*8
EN = 6.4V, Tj = 40 to 125C EN = 3.51V, Tj = 40 to 125C EN = 0V, Tj = 40 to 125C Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Vrs, Vfail 4.5V Vrs, Vfail 0.8V Vrs 3.0V Vrs 0.8V Vo1th = Vo1thH-Vo1thL Vo2th = Vo2thH-Vo2thL Min. set time: 6mS Min. set time: 4mS Min. set time: 400S
EN output control current
ON
OFF Vo1-fail terminal LOW voltage Vo1-fail terminal HI voltage Reset terminal LOW voltage Reset terminal HI voltage CH1 Reset detect voltage CH2
18
CH1 CH2 Power on reset delay time W/D time W/D pulse time MODE terminal control voltage MODE = 5V ON MODE terminal A control current MODE = 0V, Tj = 40 to 125C OFF V W/D/C terminal control voltage *7 W/D/C = 5V ON W/D/C terminal A control current W/D/C = 0V, Tj = 40 to 125C OFF V Min. clock pulse time = 5 S (Duty 50%) CK terminal control voltage CK = 5V ON CK terminal control A current CK = 0V, Tj = 40 to 125C OFF Notes: *3: Refer to dropout voltage. *4: Since PD (max) = {(VINVO1) (IO1+ IO2)} + (VIN Iq) + {(VO1VO2) IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 C (min.) and 165C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150C is 16mS (0.32V/mS) max.
Reset detect voltage hysteresis width
IENH1 IENH2 1.0 IENL Vfail L Vfail H Vo10.8V * 5 0.5 VRSL VRSH Vo10.8V * 5 Vo1thH Vo1 0.97 Vo1thL 4.05 Vo2thH Vo2 0.985 Vo2thL 3.00 Vo1th 0.255 Vo2th 0.105 tdly 0.70 Rtc Ctc 0.72 Rtc Ctc 0.74 Rtc Ctc 0.52 Rtc Ctc 0.54 Rtc Ctc 0.56 Rtc Ctc twd 0.04 Rtc Ctc 0.06 Rtc Ctc 0.08 Rtc Ctc twdp Vmodeth 1.0 3.0 ImodeH 200 ImodeL 1.0 1.0 Vw/d/cth 3.0 1.0 Iw/d/cH 200 Iw/d/cL 1.0 1.0 Vckth 3.0 1.0 IckH 200 IckL 1.0 1.0
OCP operation Reset operation
Vo1 Vo1 fail

(Vo1 pull-up)
OCP operation Reset operation
Vo2 MODE
Vo2thH
Vo2thL
(Vo1 system connection)

Open status
Vmodeth Vo1 pull-up status
TC
(3.3 pull-up)
tdly twd twdp Open status
RESET W/D/C CK
tdly tdly-twdp
(Vo1 system connection)
W/D Stop period
2.0 0.8
+0.2
(Ta=25C)
7.50.2
Rise Characteristics of Output Voltage
6 5.10
Output voltage VO1, VO2 (V) Output voltage VO1 (V) Output voltage VO2 (V)
Line Regulation (V01)
3.50
IO1=0A 0.4A
5.00
3.40
IO2=0A 0.2A
IO1=0A 0.2A 0.4A

4.90
IO2 =0A 0.1A 0.2A

3.30
10
10
20
30
40
10
20
30
40
Load Regulation (V01)
Dropout Voltage (V01)

1.0
5.10
Output voltage VO1 (V) Output voltage VO2 (V)
3.50
Vdif1 (V) Dropout voltage
5.00
3.40
0.5
VIN =6V 10V 14V 18V

4.90 0
VIN =6V 10V 14V 18V

3.30 0
0.1
0.2
0.3
0.4
0.05
0.10
0.15
0.20
0.2
0.4
0.6
GND Current
Overcurrent Protection Characteristics (V01)

6
40
GND current IGND (mA) Output voltage VO1 (V)
4 4
IO1=0.4A
20
VIN =6V 10V 14V 18V

2
VIN =6V 10V 14V 18V

2
IO1=0.2A IO1=0A
10
20
30
40
0.5
1.0
0.2
0.4
0.6

6
EN Terminal Output Voltage

6
IO1=5mA
Power dissipation PD (W) Output voltage VO1 (V) Output voltage VO1 (V)
40 4 Infinite heatsink equivalent (Tc=25C)
30
20
10
Copper foil area (5.07.4mm, t=1m) 0 25 50 85 125 150
0 100 120 140 160 180 200

0 -40
EN terminal voltage VEN (V)
19
Features
Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1
Parameter
DC input voltage Vo1, Vo2 output control terminal voltage Vo2 output control terminal voltage CH1 Output current TC terminal input voltage CK terminal input voltage W/D/C terminal input voltage Reset terminal output voltage Power dissipation Junction temperature Operating temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air) CH2
Symbol
VIN1 VIN2 EN VC Io1 Io2 TC CK W/D/C RESET P D1 P D2 Tj Top Tstg j-c j-a
Ratings
13 to 35 0.3 to 35 0.3 to 35 0.4 0.2
Unit
V V V A
Remarks
1
Reverse connection 1 min max.
8 2.50.2 0.4 0.05

+0.15 +0.15
1.270.25
0.250.05
0.3 to 7

18.6 2.97 40 to 150 40 to 105 40 to 150 6.7 42 W C C C C/W C/W With an infinite heatsink mounted.
Battery Cin
With an infinite heatsink mounted.
*1
D1 Vin1 EN Vin2 Vc Vo1

3Pin 2Pin 6Pin 4Pin 14Pin
RESET Vo2
SFP3006 7Pin
8Pin 10Pin 11Pin
Rtc Co1 Ctc Load
5Pin 1,9, 12,13Pin
GND
CK
D2
Tc W/D/C
*1
* The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.
Notes: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18m)
Load
Co2
Parameter
Input voltage Output voltage Dropout voltage Ripple rejection CH1 CH2 CH1 CH2 CH1 CH2 Quiescent circuit current GND current Overcurrent protection starting current Residual current at a short CH1 CH2 CH1 CH2 ON OFF
Symbol
VIN1, 2 Vo1 Vo2 VDIF1 VDIF2 RREJ1 RREJ2 Iq IGND Is11 Is21 Is21 Is22 VENth IENH IENL VRSL VRSH Vo1thH Vo1thL
min Vo1+VDIF1 4.85 4.85
Ratings typ
max 35
Unit
V V V db
Conditions
* 2, 3
VIN1 = 6 to 18V, Io = 0 to 0.3A VIN2 = 6 to 18V, Io = 0 to 0.3A
5.00 5.00
5.15 5.15 0.5 0.5
Cin: Capacitor (39 F) for oscillation prevention CO1: Output capacitor (39 F) CO2: Output capacitor (39 F) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47 F in parallel). D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).
54 54 10 50 5 70 0.402 0.201 0.402 0.201 0.9 1.0 50 250 10 100 1.8 0.8 1.8 0.8 3.5 50 1.0 0.5 Vo1-0.8V Vo1 0.97 4.05 1.18 Rtc Ctc 1.26 Rtc Ctc 1.35 Rtc Ctc 0.93 Rtc Ctc 1.03 Rtc Ctc 1.13 Rtc Ctc 0.07 Rtc Ctc 0.13 Rtc Ctc 0.19 Rtc Ctc 1.0 1.0 1.0 1.0 1.0 1.0 3.0 200 1.0 3.5 300 1.0 3.0 200 1.0
f = 100 to 120Hz VIN1 = 16V, VEN = 0V VIN1 = 35V, VEN = 0V Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 4.5V Vo1 = 0V Vo2 = 0V
Vin1
(3 Pin)
A mA mA A A V A V V V V S S S V A V A V A
Circuit Block Diagram

Vo1
(4 Pin)
EN
(2 Pin)
EN TSD
Drive1 OCP1
Err.
D E T
Vo1 RESET W/D
RESET
(14 Pin)
EN output control voltage EN output control current
Vin2
(6 Pin)
Vo2
(7 Pin)
EN = 5V EN = 0V Isink = 250A (Pull-up resistance 20k typ) Isource = 15A Vrs Vrs 4.5V 0.8V
Vc
(5 Pin)
Vc (Vo2: EN)
Drive2 OCP2
Err.
D E T
W/D/C
(11 Pin)
Reset terminal LOW voltage Reset terminal HI voltage Reset detect voltage CH
GND
(1,9,12,13 Pin)
*4
TC
(8 Pin)
CK
(10 Pin)
Power on reset delay time W/D time W/D pulse time CK terminal control voltage CK terminal control current ON OFF
t dly t wd t wdp Vckth IckH IckL Vcth IcH IcL Vw/d/cth Iw/d/cH Iw/d/cL
Min. set time: 6mS Min. set time: 4mS Min. set time: 400S Min. clock pulse time: 5s (Duty 50%) VCK = 5V VCK = 0V Vc = 5V Vc = 0V VW/D/C = 5V VW/D/C = 0V
Vin1, Vin2 (+B) EN Vo1
(BACK UP power supply) ENthH Vo1thH ENthL Vo1thL
Timing Chart
Vc output control voltage Vc output control current W/D/C terminal control voltage W/D/C terminal control current ON OFF
Vo Vo2
(Main power supply)
TC RESET CK W/D/C
tdly twd twdp W/D OFF mode
Notes: *2: Refer to Dropout Voltage. *3: Since PD (max) = (VINVO1) IO1+ (VIN2VO2) IO2 + (VIN Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 C (min.) and 165C (typ). These values represent the design warranty.
20
2.0 0.8
+0.2
(Ta=25C)
7.50.2
Rise Characteristics of Output Voltage (V01)
6
Rise Characteristics of Output Voltage (V02)

6

5.10
IO1=0A 0.2A 0.4A

2
IO2 =0A 0.2A 0.4A

2
5.05
5.00
4.95
IO1=0A 0.2A 0.4A
0 0 2 4 6 8 10 0 2 4 6 8 10
Input voltage V IN (V) Input voltage VIN (V)
4.90 0 5 10 15 20 25 30

5.10

5.10

5.10
5.00
5.00
5.05
5.05
5.05
5.00
IO1=0A 0.1A 0.2A

4.95
4.95
VIN =6V 10V 14V 18V
4.95
VIN =6V 10V 14V 18V
4.90 0 5 10 15 20 25 30
4.90
0.1
0.2
0.3
0.4
4.90
0.05
0.10
0.15
0.20

0.6

0.6

6
Vdif1 (V)
Vdif2 (V)
0.4
0.4
Dropout voltage
Dropout voltage
0.2
0.2
Ta=150C 25C 40C
VIN =6V 10V 14V 18V

2
Ta=150C 25C 40C

0 0 0.2
0.4
0.1
0.2
0.2
0.4
0.6
0.8

6

6
20 Infinite heatsink equivalent (Tc=25C)
IO1=5mA
16 4 4
Power dissipation PD (W) Output voltage VO2 (V) Output voltage VO1 (V)
VIN =6V 10V 14V 18V

2
12
8 Copper foil area (5.07.4mm, t=18m)
0 0 0.2 0.4 0.6

0 100
125
150
175
200
0 -50
50
100
150
21
Switching Type Regulator ICs SI-3201S
Features
Output current of 3A (Ta = 25C, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, I O = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit

3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2
7.9 0.2 16.9 0.3
(2.0) 0.95 0.15 (4.6) 0.85 0.1

+0.2
2.6 0.1

Parameter Input voltage Output voltage SWOUT terminal voltage Power Dissipation PD2 Junction temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj Tstg
j-c j-a
(Ta=25C)
Symbol VIN IO VSWOUT PD1
Ratings 35 3 1 22 1.8 40 to +150 40 to +125 5.5 66.7
Unit V A V W W C C C/W C/W
Conditions
P1.7 0.7 4 = 6.8 0.7
0.45
+0.2 0.1
3.9 0.7
(4.3)
8.2 0.7
With infinite heatsink

1 2 3 4 5
Stand-alone
1. VIN 2. SWOUT 3. GND 4. VS 5. SS
(Forming No. 1101)

VIN 1 VIN
c
SI-3201S
a d f b e
Recommended Operating Conditions

Parameter Input voltage Output current Operating temperature Symbol min VIN IO Top 8 0.5 40 Ratings typ max 18 3 +85 Unit V A C TaPD characteristics Conditions
SW Tr SWOUT
(8.0)
5.0 0.6
L1 VO
C1
+ 5 SS
h
D1
g
(17.9)
C2
VS
i
C3 GND
GND 3
GND
Parameter Output voltage Line regulation Load regulation Efficiency *1 Oscillation frequency Quiescent circuit current Overcurrent protection starting current Soft *3 start terminal Low level voltage Source current when low Discharge resistance f OSC Iq IS VSSL I SSL RDIS 15 25 200 3.1 50 Symbol min VO VO LINE VO LOAD 82 60 5 4.80 Ratings typ 5.00
(VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified)
C1: 1000F C2: 1000F a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver
L 1: 250H D1: RK46 (Sanken) f : Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage
max 5.20 100 50
Unit V mV mV %
Conditions
VIN = 8 to 18V IO = 0.5 to 3A
70 10
kHz mA A IO = 0A
*2
0.2 35
V A k VSSL = 0.2V VIN = 0V
Notes: *1. Efficiency is calculated by the following equation: VO I O = 100 (%) VIN I IN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.
Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000F or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. (3) L1 should be a choke coil with a low core loss for switching power supplies. (4) Use a Schottky barrier diode for D1 and make sure that the reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.
SI-3201S
5 SS C3
SI-3201S
5 SS
SI-3201S
5 SS C3
22
Switching Type Regulator ICs SI-3201S
Line Regulation
5.10
Load Regulation
5.15 5.10
6 5
5.05
5.05 5.00 4.95 4.90 4.85
4 3 2 1 0
Io = 0A = 1A = 2A = 3A
5.00
4.95
Io = 0A = 1A = 2A = 3A
VIN =18V = 10V = 7V
4.90
4.85 0 5 10 15 20 25 30 35
0.5
1.0
1.5
2.0
2.5
3.0
10
Efficiency Curve
90

6 5
Overcurrent Protection Temperature Characteristics

6 5
80
70
Efficiency
V IN = 18V = 10V = 7V
4 3 2 1 0
VIN =18V = 10V = 7V
(%)
4 3 2 1 0
TC = +100, 25, --20C
60
50
40 0 0.5 1.0 1.5 2.0 2.5 3.0

1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
25
With infinite heatsink With silicone grease Heatsink: aluminum
Power Dissipation PD (W)
20
15
10
0 40
40
80
120
160
23
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Surface-mount full-mold package

1.0 0.3 0.25 0.89 0.15 2.54 0.25 0.75 0.05
+0.15
SMD-16A
16 9.8 0.3 6.8max 3.0 0.2 6.3 0.2 8.0 0.5
a b
Pin 1 20.0max 19.56 0.2 8
0 to 0.15
0.3 0.05
+0.15

Parameter Power supply voltage Drive terminal applied voltage Input terminal voltage DIAG output applied voltage DIAG output source current Voltage across power supply and drive terminal Output current Power dissipation Junction temperature Operating temperature Storage temperature Symbol VB VD VIN VDIAG IDIAG VBD IO PD Tj TOP Tstg Ratings 13 to +40 0.3 to VB 0.3 to +7.0 0.3 to +7.0 3 VB 0.4 1.5 2.6 40 to +150 40 to +100 40 to +150 Unit V V V V mA V A W C C C Conditions
(Ta=25C)
4.0max
3.6 0.2 1.4 0.2

Without heatsink, all circuits operating
The MIC is bound by the dotted lines. 9,12,16 VB 2
Pre. Reg. IN1 DIAG1 2 3 DIAG DET.

CONT. 11k typ. O.C.P
Drive
1,15 T.S.D 14
Ratings Parameter Operating power supply voltage Quiescent circuit current Threshold input voltage Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Output transfer time TOFF TPLH DIAG output transfer time TPHL 15 30 15 10 30 30 I IN VCE (sat) IO (off) VDL IDGH Ropen IS TON 1 1.6 8 30 0 100 0.5 2.0 0.3 100 30 Symbol VBopr Iq VINth I IN 0.8 min 6.0 5 typ max 16 12 3.0 1.0
Out1 2
(VBopr =14V, Ta=25C unless otherwise specified)
D1 1
Unit V
Conditions
IN2 DIAG2 7 6
CONT. 11k typ. O.C.P
Drive
mA V mA A V mA V A k A s s s s
Lo output
DIAG DET.
8,10 11 4,5,13
Out2
*2
D2 1
VIN = 5V VIN = 0V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V IDIAG = 3mA VDIAG = 5V
[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator
GND
*2
DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection
*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be shorted at a pattern near the product.
VO = VBopr 1.9V IO = 1A IO = 1A IO = 1A IO = 1A

VB PZ D1 Out
Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except, VB and GND, are open).
SDH04
VCC DIAG 5.1k
Diagnostic Function
GND VB
3.0V
IN
GND
VIN
0.8V
Truth table VIN VO

H
SHORT Is OPEN OPEN OVER VOLTAGE
Load
GND
H L L
TSD
GND
VOUT
IO
Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series.
GND VDIAG
Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU
24
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Quiescent Circuit Current (dual circuit)
20 Ta = 40C 25C 125C VIN = 0V
Circuit Current (single circuit)

50 VIN = 5V Ta = 40C
Circuit Current (dual circuit)

100 VIN = 5V
40 25C
80
Ta = 40C 25C
Iq (mA)
IB (mA)
10
125C 20 VIN = 0V
IB (mA)
30
60
40
125C
VO shorted VO open 0 0 10 20 30 40 46
10
20 VIN = 0V
0 0
10
20
30
40
46
0 0
10
20
30
40
46
VB (V)
VB (V)
VB (V)
Saturation Voltage of Output Transistor

1.5 VB = 16V VB = 6V Ta = 125C
Overcurrent Protection Characteristics (Ta=40C)

20 VB = 18V

20 VB = 18V
15
15
VCE (sat) (V)
1.0
VO (V)
VO (V)
25C 0.5 40C
10
14V
10
14V
5 6V
5 6V
IO (A)
IO (A)
IO (A)

20 VB = 18V 15
Threshold Characteristics of Input Voltage

15 Ta = 125C
Input Terminal Source Current

1.0
VB = 14V IO = 1A
25C 40C
VB = 14V
0.8 10
IIN (mA)
VO (V)
VO (V)
14V 10
0.6 Ta = 125C 25C 40C
0.4
5 5 6V 0.2
10
IO (A)
VIN (V)
VIN (V)
Input Terminal Sink Current

1.0
Saturation Voltage of DIAG Output

0.3 VB = 14V IDIAG = 3mA 0.2
VB = 14V VIN= 0V
IINL (A)
0.5
VDL (V)
0.1 0 50 100 150 0 50
0 50
50
100
150
Ta (C)
Ta (C)
25
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica

3.2 0.2 10 0.2 4.2 0.2 2.8 0.2
4 0.2
7.9 0.2 16.9 0.3
2.6 0.1
a
2.9 0.3
+0.2

Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Symbol VB VIN VDIAG VCE IO PD1 Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.5 40 to +125 40 to +100 40 to +125 W C C C Ratings 40 0.3 to VB 6 40 1.8 18 Unit V V V V A W Conditions
(Ta=25C)
0.94 0.15
R-end
0.85 0.1
+0.2
0.45 0.1
P1.7 0.1 4 = 6.8
4 0.6
With infinite heatsink (Tc = 25C) Stand-alone without heatsink (Tc = 25C)
1. GND 2. VIN 3. VO 4. DIAG 5. VB
(Forming No. 1123)

VB 5
Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance L 1 30 0.3 30 V s s mH 4.5 15 30 6 I IL IS 0.1 1.9 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 1.0 IO, leak VIH 2.0 2 VB V mA V Ratings min 6.0 5 typ max 30 12 0.5 Unit V mA V
(Ta=25C unless otherwise specified)
VO
PZ VCC
Conditions
VIN 2 LS-TTL or CMOS
SI-5151S
3 DIAG 4
5.1k
VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V VCEO = 16V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V
Load
Truth table VIN VO

H L H L
GND
Diagnostic Function
TTSD Ropen TON 8 125 145 30 30 C k s s V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V VCC = 6V, IDD = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A
Normal Open load Shorted load Overheat Normal
VIN VO DIAG
VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
Mode
Normal
26
3.6 0.5
+0.2
20 max
10
Circuit Current
40
Ta = --40C

1.0
30
IB (mA)
Iq (mA)
95C
25C
--40C
VCE (sat) (V)
Ta = 25C
V B= 6 to 16V
20
Ta = 95C
0.5
95C
--40C
10
25C
0 0 10 20 30 40
0
0 10 20 30 40 50
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta= 40C)

16 14 12 10
VB = 14V

16 14 12 10

16 14
VB = 14V
12 10
VB = 14V
VO (V)
VO (V)
8 6 4 2 0 0 1 2 3
8 6 4 2 0 0 1 2 3
VO (V)
8 6 4 2 0 0 1 2 3
IO (A)
IO (A)
IO (A)
Threshold input voltage

20
Input Current (Output ON)

1.0
Input Current (Output OFF)

2
Ta = 95C
15
25C 40C
VIN = 5V VB = 14V
VIN = 0V VB = 14V
VB = 16V I O = 1A
IIH (mA)
IIL (A)
0 50 100
VO (V)
10
0.5
0 0 1 2 2.2
0 40
0 40
50
100
VIN (V)
Ta (C)
Ta (C)

0.2

16 14 12 6
VB = 14V
Vo DIAG VB = 14V IO = 10mA
VDG (sat) (V)
DIAG (V)
VO (V)
10 8 6 4 2
5 4 3 2 1
0.1
0 40
0
0 50 100
50
100
150
Ta (C)
Ta (C)
27
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica

3.2 0.2 10 0.2 4.2 0.2 2.8 0.2
4 0.2
7.9 0.2 16.9 0.3
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15

Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 40 0.3 to VB 6 40 1.8 22 Unit V V V V A W Conditions
(Ta = 25C)
0.85 0.1
+0.2
R-end
0.45 0.1
P1.7 0.1 4 = 6.8
4 0.6

With infinite heatsink (Tc=25C) Stand-alone without heatsink
(Forming No. 1123)

VB 5
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF DIAG output leak current Saturation voltage of DIAG output DIAG output transfer time TPHL Minimum load inductance L 1 30 IDIAG VDL TPLH 15 30 100 0.3 30 I IL IS 0.1 1.9 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 1.0 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.5 Unit V mA V
VO
PZ VCC
SI-5152S
3 DIAG 4
Conditions
5.1k
VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V
Load
VIN H L
Truth table VO
H L
GND
Diagnostic Function
TTSD Ropen TON
150 30 8 30
C k s s A V s s mH
VBopr 6V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A
VIN VO DIAG
Mode Normal
Open load Shorted load Overheat
VIN L H L H L H L H
VO L H H H L L L L
DIAG
L H H H L L L L
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
28
3.6 0.5
+0.2
20 max
10
Circuit Current
40
Ta = 40C

1.0
30
Iq (mA)
40C
VCE (sat) (V)
Ta = 25C
VB = 6 to 16V
IB (mA)
95C
25C
20
Ta = 95C
0.5
95C
40C
10
25C
0 0 10 20 30 40
0
0 10 20 30 40 50
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta = 40C)

16 14 12 10
VO (V)
VB = 14V

16 14 12 10

16 14
VB = 14V
12 10
VB = 14V
VO (V)
8 6 4 2 0 0 1 2 3
8 6 4 2 0 0 1 2 3
VO (V)
8 6 4 2 0 0 1 2 3
IO (A)
IO (A)
IO (A)

20

1.0

2
Ta = 95C
15
25C 40C
VIN = 5V VB = 14V
VIN = 0V VB = 14V
VB = 16V IO = 1A
IIH (mA)
IIL (A)
0 50 100
VO (V)
10
0.5
0 0 1 2 2.2
0 40
0 40
50
100
VIN (V)
Ta (C)
Ta (C)

0.2
VB = 14V
VDL (V)
0.1
0 40
50
100
Ta (C)
29
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

3.2 0.2 10 0.2 4.2 0.2 2.8 0.2
4 0.2
7.9 0.2 16.9 0.3
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15
R-end
0.85 0.1
+0.2
0.45 0.1
Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation
Symbol VB VIN VDIAG VCE IO PD1 PD2
Ratings 13 to +40 0.3 to VB 6 VB VZ 2.04 22 1.8 40 to +150 40 to +100 40 to +150
Unit V V V V A W W C C C
Conditions
P1.7 0.1 4 = 6.8
4 0.6
Refer to "Surge clamp voltage" in Electrical Characteristics
(Forming No. 1123)
Junction temperature Operating temperature Storage temperature
Tj TOP Tstg

VB 5 VO
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance Surge clamp voltage L 1 28 34 40 30 0.3 30 V s s mH V 4.5 15 30 6 I IL IS 0.1 2.05 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) IO, leak VIH 2.0 min 6.0 5 typ max 30 12 0.47 2 VB Unit V mA V mA V
SI-5153S
3 DIAG 4
VCC
Conditions
1
5.1k
VBopr = 14V, VIN = 0V IO 2.05A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V
Load
GND
Overheat Normal
Truth table VIN VO

H L H L
Diagnostic Function
Normal Open load Shorted load
TTSD Ropen TON
150 30 8 30
C k s s V
VBopr 6V
VIN
VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A
VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
VO DIAG
Mode
Normal
*1
VZ
IC = 5mA
Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = 13V, one minute. * This driver is exclusively used for ON/OFF control.
30
3.6 0.5
(Ta=25C)
+0.2
20 max
10
Circuit Current
50

2
40
VCE (sat) (V)
Ta = 40C
Iq (mA)
Ta = 40C 25C 150C
IB (mA)
30 25C 20 150C 10
Ta = 125C
VB = 6 to 16V
25C 40C
0 0
10
20
30
40
0 0
10
20
30
40
VB (V)
VB (V)
IO (A)

20 VB = 18V 15 14V 10
Overcurrent Protection Characteristics (Ta =25C)

20 VB = 18V 15

20 VB = 18V 15 14V
VO (V)
VO (V)
14V 10
VO (V)
10 8V 5
8V 5 5
8V
IO (A)
IO (A)
IO (A)
Threshold Characteristics of Input Voltage

20 Ta = 150C 25C 40C 15

1.0

5
VB = 14V VIN = 5V
0.8 4
VB = 14V VIN = 0V
VB = 16V IO = 1A
I IH (mA)
10
0.4
I IL (A)
0 50 100 150
VO (V)
0.6
5 0.2 1
0 50
0 50
50
100
150
VIN (th) (V)
Ta (C)
Ta (C)
Output Terminal Leak Current

2

0.5

20
VB = 14V
0.4
VB = 14V IDIAG = 2mA

15
VB = 14V VDIAG = 5V IO = 10mA VO
IO leak (mA)
VDL (V)
VO (V)
0.3
10
0.2
0.1
VDIAG
0 50
50
100
150
0 50
0 0 50 100 150 0 50 100 150 200
Ta (C)
Ta (C)
Ta (C)
31
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

3.2 0.2 10 0.2 4.2 0.2 2.8 0.2
4 0.2
7.9 0.2 16.9 0.3
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15

Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 13 to +40 0.3 to VB 6 VB VZ 2.5 22 Unit V V V V A W Conditions
R-end
(Ta=25C)
0.85 0.1
+0.2
0.45 0.1
P1.7 0.1 4 = 6.8
4 0.6
Refer to "Surge clamp voltage" in Electrical Characteristics
(Forming No. 1123)

With infinite heatsink (Tc =25C) Stand-alone without heatsink

VB 5 VO
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance Surge clamp voltage L 1 28 34 40 30 0.3 30 V s s mH V 4.5 15 30 6 I IL IS 0.1 2.6 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 0.72 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.3 Unit V mA V
SI-5154S
3 DIAG 4
VCC
Conditions
5.1k
Load
GND
Overheat Normal
Truth table VIN VO

H L H L
Diagnostic Function
TTSD Ropen TON
150 30 8 30
C k s s V
VIN VO DIAG
Mode Normal
*1
VZ
IC = 5mA
Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = 13V, one minute. * This driver is exclusively used for ON/OFF control.
VIN L H L H L H L H
VO L H H H L L L L
DIAG
L H H H L L L L
32
3.6 0.5
+0.2
20 max
10
Circuit Current
50

2
40 Ta= 40C 25C 150C
Ta = 40C 25C
Iq (mA)
IB (mA)
30
VCE (sat) (V)
1 VB = 6 to 16V
Ta = 125C 25C 40C
20
150C
10
0 0
10
20
30
40
0 0
10
20
30
40
VB (V)
VB (V)
IO (A)

20 VB = 18V 16 14V

20 VB = 18V 16 14V

20 VB = 18V 16 14V
VO (V)
VO (V)
8 8V 4
8 8V
VO (V)
12
12
12
8V
6V
4 6V 0
6V
IO (A)
IO (A)
IO (A)

20 Ta = 125C 25C 40C 15

1.0

5
VB = 14V VIN = 5V
0.8 4
VB = 14V VIN = 0V
I IH (mA)
10
0.4
I IL (A)
0 50 100 150
VO (V)
VB = 16V IO = 1A
0.6
5 0.2 1
0 50
0 50
50
100
150
VIN (th) (V)
Ta (C)
Ta (C)

2

0.5

20
VB = 14V
0.4

15
IO leak (mA)
VDL (V)
VO (V)
0.3
10
0.2
0.1
VDIAG
0 50
50
100
150
0 50
0 0 50 100 150 0 50 100 150 200
Ta (C)
Ta (C)
Ta (C)
33
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica

3.2 0.2 10 0.2 4.2 0.2 2.8 0.2
4 0.2
7.9 0.2 16.9 0.3
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15

Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 13 to +40 0.3 to VB 6 40 2.5 22 Unit V V V V A W Conditions
(Ta=25C)
0.85 0.1
+0.2
R-end
0.45 0.1
P1.7 0.1 4 = 6.8
4 0.6

(Forming No. 1123)

VB 5
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance L 1 30 0.3 30 V s s mH 4.5 15 30 6 I IL IS 0.1 2.6 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 0.72 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.3 Unit V mA V
VO
PZ VCC
SI-5155S
3 DIAG 4
Conditions
5.1k
Load
GND
Overheat Normal
Truth table VIN VO

H L H L
Diagnostic Function
TTSD Ropen TON
150 30 8 30
C k s s V
VIN VO DIAG
Mode Normal Open load Shorted load Overheat
VIN L H L H L H L H
VO L H H H L L L L
DIAG
L H H H L L L L
34
3.6 0.5
+0.2
20 max
10
Circuit Current
50

2
40 Ta= 40C 25C 150C
Ta = 40C 25C
Iq (mA)
IB (mA)
30
VCE (sat) (V)
1 VB = 6 to 16V
Ta = 125C 25C 40C
20
150C
10
0 0
10
20
30
40
0 0
10
20
30
40
VB (V)
VB (V)
IO (A)

20 VB = 18V 16 14V

20 VB = 18V 16 14V
Overcurrent Protection Characteristics (Ta =125C)

20 VB = 18V 16 14V
VO (V)
VO (V)
8 8V 4
8 8V
VO (V)
12
12
12
8V
6V
4 6V 0
6V
IO (A)
IO (A)
IO (A)

20 Ta = 125C 25C 40C 15

1.0

5
VB = 14V VIN = 5V
0.8 4
VB = 14V VIN = 0V
I IH (mA)
10
0.4
I IL (A)
0 50 100 150
VB = 16V IO = 1A
VO (V)
0.6
5 0.2 1
0 50
0 50
50
100
150
VIN (th) (V)
Ta (C)
Ta (C)

2

0.5

20
VB = 14V
0.4

15
IO leak (mA)
VDL (V)
VO (V)
0.3
10
0.2
0.1
VDIAG
0 50
50
100
150
0 50
0 0 50 100 150 0 50 100 150 200
Ta (C)
Ta (C)
Ta (C)
35
High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150C guaranteed

31 0.2 24.4 0.2 3.2 0.15
Ellipse 3.2 0.15 3.8
4.8 0.2 1.7 0.1
12.9 0.2
16 0.2 9.9 0.2
a b
2.45 0.2
6.4 0.5
1.15 0.1 14 P2.03 0.1 = (28.42)
+0.2
0.65 0.1
+0.2
0.55 0.1
+0.2

Parameter Power supply voltage Drive terminal applied voltage Input terminal voltage DIAG output applied voltage DIAG output source current Voltage across power supply and output terminal Voltage across power supply and drive terminal Output current Output reverse current Electrostatic resistance Power Dissipation Junction temperature Operating temperature Storage temperature Symbol VB VD VIN VDIAG IDIAG VBO Ratings 13 to +40 0.3 to VB 0.3 to +7.0 0.3 to +7.0 3 VB 34 Unit V V Conditions
(Ta=25C)
31.3 0.2

15
1 23
V V mA V

VB
VBD IO IO ES/A PD Tj TOP Tstg
0.4 1.5 1.8 250 4.8 40 to +150 40 to +115 50 to +150
V A
a b d c f g e
A V W C C C
MIC
C = 200pF, R = 0 Stand-alone without heatsink, all circuits operating
VIN
OUT D
GND
FLT
Ratings Parameter Operating power supply voltage Quiescent circuit current (per circuit) Circuit current (per circuit) Threshold input voltage Hi output Input voltage Lo output Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Surge clamp voltage Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Thermal protection starting temperature Output transfer time TOFF TPLH DIAG output transfer time TPHL Minimum load inductance Maximum ON duty Lo D(ON) 1.0 0 I IN VCE (sat) VCE (sat) IO (off) 29 VBO 28 VDL IDGH Ropen IS 5.5 1.6 34 1.0 2.5 34 100 VIN I IN Symbol VBopr Iq IB VINth VIN 0.8 3.7 min 6.0 0.8 19.3 typ
(VBopr =14V, Tj= 40 to +150C unless otherwise specified)
a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit
e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit
max 16 1.6
Unit V mA mA
Conditions
Lo output Tj = 25C

VB VCC
3.0
V V
1.5 1.0
V mA A VIN = 5V VIN = 0V IO 1.2A, VBopr = 6 to 16V IO 1.5A, VBopr = 6 to 16V Tj = 25C, VCEO = 14V Tj = 25C, IC = 10mA IC = 5mA IDGH = 2mA, VBopr = 6 to 16V VCC = 7V
5 7
1 VB IN1 IN2
3 9 14 D1 D2 D3 FLT1 4
SLA2501M
FLT2 8
12 IN3
0.2
V V
FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15
5 39 40 0.4 100
mA V V V A k A
Diagnostic Function
VO = VBopr 1.5V
TTSD TON 30 100 30 100
C s s s s mH 60 %
VBopr 6V IO = 1A IO = 1A IO = 1A IO = 1A
VIN VO VDIAG
36
Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
Quiescent Circuit Current (single circuit)
5
VIN = 0V

40
VIN = 5V

1.0
Ta = 40C
4
V IN = 5V V B = 6 to 16V Ta =150C Ta =125C
Iq (mA)
IB (mA)
VCE (sat) (V)
Ta = 40C Ta = 25C Ta = 125C
30
Ta = 25C
Ta = 40C
0.5
20
Ta = 125C
Ta = 25 C
1
10
0 0 10 20 30 40
10
20
30
40
3.5
VB (V)
VB (V)
IO (A)

20

20

20
VB = 14V
V B = 14V
VB = 14V
VO (V)
VO (V)
VO (V)
0 1 2 3 4 5
10
10
10
0 0 1 2 3 4
0 0 1 2 3 4
IO (A)
IO (A)
IO (A)
Threshold Input Voltage

20

I OUT = 1A 25C 40C
1.0 VB = 14V V IN = 0V

20
VB = 16V Ta = 125C
V B = 14V
V IN = 0V
IIH (mA)
10
0.5
IIL (A)
VO (V)
10
0 0 1 2 3 4
0 --50
50
100
125
0 50
50
100
125
VIN (V)
Ta (C)
Ta (C)

0.3
Output Reverse Current

1.4
Thermal Protection
20 10
V B = 14V VIN = 5V I FLT = 3 (mA)
V B = 16V IO = 10mA VO
1.2 1.0
0.2
VDL (V)
Ta = 25C
0.6 0.4 0.2
VO (V)
VF (V)
0.8
Ta = --40C Ta = 125C
10
VFLT (V)
V FLT
5
0.1
0 50
50
100
125
0 0
60
100
160
180
Ta (C)
IF (A)
Ta (C)
37
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed

310.2 24.4 0.2 3.2 0.15 Ellipse 3.2 0.15 3.8 4.8 0.2 1.7 0.1
16 0.2 9.9 0.2
12.9 0.2
a b
2.45 0.2

Parameter Power supply voltage Input terminal voltage DIAG output applied voltage DIAG output source current Output current Power Dissipation Junction temperature Operating temperature Storage temperature Symbol VB VIN VDIAG IDIAG IO PD Tj TOP Tstg Ratings 13 to +40 0.3 to +7.0 0.3 to +7.0 3 1.2 4.8 40 to +150 40 to +100 50 to +150 Unit V V V mA A W C C C Conditions
6.4 0.5
(Ta=25C)
1.15 0.1 14 P2.03 0.1 = (28.42)
+0.2
0.65 0.1
+0.2
0.55 0.1
+0.2
31.3 0.2
1 23
15
Stand-alone operation without heatsink; all circuits operating

SLA2502M
The MIC is bound by the dotted lines. Pre. Reg. 8 VB
Parameter Operating power supply voltage Quiescent circuit current (per circuit) Threshold input voltage Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Output transfer time TOFF TPLH DIAG output transfer time TPHL 15 30 15 10 30 30 I IN VCE (sat) IO (off) VDL IDGH Ropen IS TON 1.6 8 30 0 100 0.5 2.0 0.3 100 30 Symbol VBopr Iq VINth I IN 0.8 Ratings min 6.0 5 typ
NI1
2 3
(VBopr =14V, Ta=25C unless otherwise specified)
CONT. 11k typ.
Drive
O.C.P
DIAG1
DIAG DET
1 T.S.D
Out1
max 16 12 3.0 1.0
Unit V mA V mA A V mA V A k A s s s s VIN = 5V VIN = 0V VIN = 0V
Conditions
NI2 DIAG2 GND1 6 5 4
CONT. 11k typ.
Drive
O.C.P
DIAG DET
Out2
Pre. Reg. NI3 DIAG3 10 11

CONT. 11k typ.
Drive
O.C.P
DIAG DET
9 T.S.D
IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V I DIAG = 3mA

GND4 NI4 DIAG4 14 13 12
CONT. 11k typ.
Out3
Drive
O.C.P
DIAG DET
15
Out4
VDIAG = 5V [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator
VO = VBopr 1.9V IO = 1A IO = 1A IO = 1A IO = 1A
DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection

VB PZ D1 Out
Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except VB and GND should be open).
Diagnostic Function
IN
SLA2502M
DIAG
VCC
5.1k
GND
3.0V
GND
VIN
0.8V
Truth table VIN VO

VOUT
SHORT Is OPEN OPEN OVER VOLTAGE TSD
Load
GND
H L H L
VB
GND
IO
GND VDIAG
Normal Shorted load Open load Overvoltage Overheat
Note 1: A pull-down resistor (11k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product.
ERROR SIGNAL for CPU
38
60 50 40 Ta = 40C 150 25C Ta = 40C
Circuit Current (4 circuits)

200

1.0 VB (VB = 14V)
VCE (sat) (V)
Ta = 125C 0.5
IB (mA)
30 20
IB (mA)
25C 100 125C
25C
125C VIN = 0V
40C
50 VIN = 0V
10 0 0 0 0 0 0
10
20
30
40
46
10
20
30
40
46
VB (V)
VB (V)
IO (A)

20 VB = 18V 15 14V 10

20

3 VB = 14V VIN = 0V
15
Ta = 125C 25C 40C 2
10
I IL (A)
1 1 2 3 0 50
VO (V)
VO (V)
4
6V
0 0
0 0
50
100
150
IO (A)
VIN (V)
Ta (C)
Input Current (Output Hi)

0.5 VB = 14V 0.4

0.3 VB = 14V IDIAG = 3mA 0.2
Quiescent Circuit Current (dual circuit)

20 Ta = 40V 25V 125V VIN = 0V
Ta = 40C 25C VDL (V)
I IH (mA)
Iq (mA)
0.1
0.3
125C
0.2
10
0.1
VO shorted VO open 1 2 3 4 5 6 0 50 0 50 100 150 0 0 10 20 30 40 46
0 0
VIN (V)
Ta (C)
VB (V)

15
Output Terminal Leak Current (VO = 0V)

1.1 1.0 Ta = 40C 25C
Open Load Detection Resistor

15
IOLEAK (mA)
VO1 (V)
TSD VB = 14V RL = 1.3k 5
ROPEN (k)
10
0.9 0.8 0.7 0.6
10 Ta = 125C 25C 5 40C
125C
0 0 50 100 150 200
0.5 5 10 15 20 25
0 5 10 15 20
Ta (C)
VB (V)
VB (V)
39
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

12.2 0.2 10.5 0.2 16 9 1.0 0.05
Fin thickness
+0.1
7.5 0.2

Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 1.8 2 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Ta=25C Conditions
(Ta=25C)
1 1.27 0.25 0.4 0.05

+0.15
8 2.50.2
0.250.05
+0.15
Block Diagram (for one channel)

VB
Thermal Protect Clamp Bias
IN
Input Logic
Lavel Shifting
Charge Pump
Current Limit
Chopper
DG
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Input threshold Output ON voltage Output OFF Output ON Inpup current Output OFF Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage I IL IS ILim TTSD Vopen TON TOFF DG leak current Low level DG output voltage DG output transfer time
Note:
(VB=14V, Ta=25C unless otherwise specified)
DG Logic
Open/Short Sense
Symbol VB (opr) Iq RDS (ON)
Ratings min 5.5 typ max 35 1 200 300
Unit V mA m m A V V
Conditions
GND OUT
VIN=0V, VOUT=0V IO=1A IO=1A, Ta=80C VOUT=0V Ta= 40 to +105C Ta= 40 to +105C VIN=5V VIN=0V VOUT =VO 1.5V VOUT=0V
C P U 1 VB 7,8 15,16 (2, 3) 9 (10,11)
Vin 1 (7V max) OUT1 OUT2 5V DG1
IO, leak VIHth VILth I IH 1.4 1.0
50 2.0 1.8 70
100 3.0
200 12
A A A A C
SPF5003
6 5
Vin 2 (7V max)
Load
Overheat
1.9
3 5
DG2
14 13 4 12
GND
RDG
RIN
1.5
3 70 35
4.5 140 90 20
V s s A V s s
VB VIN
*1
Output transfer time
RL=14, VO= 5V RL=14, VO 10% VDG= 5.5V IDG=1.6mA
IN and RDG are needed to protect CPU and SPF5003 in case of reverse *R connection of VB terminal. * Make VB of 1Pin and 9Pin short from the fin to be plated by solder.
I DG VDGL TPLH TPHL 0.15 70 45
0.5 140 120
*1
Timing Chart
VIN ON VIN OFF
Normal
VO open
Open load
Normal
OCP
Shorted load
RDG
155
165
RIN
Normal Normal
TSD
Normal
1. Transient time is showed Wave Form below.
VOUT
Recommended Operating Conditions (for one channel)

Ratings Parameter Power supply voltage VIH VIL IO RIN RDG 10 10 min 5.5 4 0.3 max 16 5.5 0.9 1 20 20 Unit V V V A k k
Wave Form
IOUT
Internal current limit

TSDON TSDOFF
VIN
DG
High inpidance
VOUT 5V Output transfer time VOUT TON VDG 90% VDG 10% TPLH TPHL TOFF VOUT 10%
Mode Normal
DG output transfer time VDG
VIN H L H L H L H L
DG H L H H L L L L
VO H L H H L (Limiting) L L L
40
Load
5V
2.0 0.8
+0.2
41
Features

17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1

Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 2.5 2.7 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Ta=25C Conditions
(Ta=25C)
1 1.270.25 0.4 0.05

+0.15
12 2.50.2
0.250.05
+0.15

VB
Thermal Protect Clamp Bias
IN
Input Logic
Lavel Shifting
Charge Pump
Current Limit
Chopper
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Output ON Input voltage Output OFF Inpup current Output ON VIL I IH IS ILim TTSD Vopen TON Output transfer time TOFF DG leak current Low level DG output voltage DG output transfer time TPHL 45 I DG VDGL TPLH 0.15 70 60 20 155 2.6 10 165 3 165 1.0 1.8 70 Symbol VB (opr) Iq RDS (ON) 250 IO, leak VIH 50 2.0 3.0 Ratings min 5.5 typ max 35 1 150
DG
DG Logic
Open/Short Sense
Unit V mA m m A V V A A A C V s s A V s s VDG =5.5V
Conditions
GND OUT
VIN=0V, VOUT=0V IO =2A IO =1A, Ta=80C VOUT =0V Ta= 40 to +105C Ta= 40 to +105C VIN =5V VOUT =VO 1.5V VOUT =0V
1 VB 2,3 14,15 (4,5,6) 13 (16,17,18)
Vin 1 (7V max) OUT1 OUT2 5V DG1
Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage
SPF5004
23 Vin 2 11 21 9
GND
24
DG2
Load
Overheat
12
(7V max)
RDG
C P U
RIN
VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder.
IDG =1.6mA
Timing Chart
VIN ON VB VIN VIN OFF
Normal
VO open
Open load
Normal
OCP
Shorted load
RDG
RIN
Normal Normal
TSD
Normal

Parameter min Power supply voltage VIH VIL IO RIN RDG 10 10 5.5 4 0.3 Ratings max 16 5.5 0.9 1.15 20 20 V V V A k k Unit
VOUT
TSDON TSDOFF
IOUT DG
High inpidance
Mode Normal Open load Shorted load Overheat
VIN H L H L H L H L
DG H L H H L L L L
VO H L H H L (Limiting) L L L
42
Load
5V
2.00.8
+0.2
7.50.2
10.50.3
43
Features

17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1

Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 1.8 2.7 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Conditions
(Ta=25C)
1 1.270.25 0.4 0.05

+0.15
12 2.50.2
0.250.05
+0.15

Ta=25C, all circuit operating
Bias Thermal Protect Clamp
IN
Input Logic
Lavel Shifting
Charge Pump
Current Limit
Chopper
DG
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Input threshold voltage Output ON Output OFF Output ON Inpup current Output OFF Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage Output transfer time TOFF DG leak current Low level DG output voltage DG output transfer time TPHL 45 120 I DG VDGL TPLH 0.15 70 35 90 20 0.5 140 I IL IS ILim TTSD Vopen TON 155 1.5 1.9 3 5 165 3 70 4.5 140 12 Symbol min VB (opr) Iq RDS (ON) 350 IO, leak VIHth VILth I IH 1.4 1.0 50 2.0 1.8 70 200 100 3.0 5.5 Ratings typ max
DG Logic
Open/Short Sense
Unit 35 1 200 V mA m m A V V A A A A C V s s A V s s
Conditions
GND OUT
VIN =0V, VOUT =0V IO =1A IO =1A, Ta=80C VOUT =0V Ta= 40 to +105C Ta= 40 to +105C VIN =5V VIN =0V VOUT =VO 1.5V VOUT =0V
GND1 GND2 2 7 GND3 17 IN1 3 IN2 8 IN3 18 1 13 VB OUT1 OUT2 OUT3 5,6 10,11 20,21 5V DG1 DG2 DG3 4 9
SPF5007
Load
Load
Overheat
RDG RDG RDG RIN RIN RIN
C P U
RL=14, VOUT =VB 5V RL=14, VB 10% VDG =5.5V IDG =1.6mA
IN and RDG are needed to protect CPU and SPF5007 in case of reverse *R connection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder.
Timing Chart
VIN ON VB VIN VIN OFF
Normal
VO open
Open load
Normal
OCP
Shorted load
Normal Normal
TSD
Normal
VOUT

Parameter Power supply voltage VIH VIL IO RIN RDG 10 10 Ratings min 5.5 4 0.3 max 16 5.5 0.9 1 20 20
IOUT

TSDON TSDOFF
Unit
DG
High inpidance
V V V A k k
Mode Normal Open load Shorted load Overheat VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L
44
Load
19
2.00.8
VB
+0.2
7.50.2
10.50.3
45
High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017
Features
Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

14.740.2 13.040.2 20 11 1.0 0.05
Fin thickness
+0.1
Parameter
Power supply voltage 1 Power supply voltage 2 Power supply voltage 3 Current sensing voltage Output terminal voltage Input terminal voltage Output current Power dissipation Storage temperature Channel temperature
Symbol
VB Vcc VB Vsense+ Vsense VOUT VPWM VHold IOUT PD Tstg Tch
Ratings
0 to 32 0.5 to 7.0 0 to 40 0.8 to 6 Vsense+Io Rsense 2 to 32 0.5 to 7.0 2.0 2.4 to 5.0 40 to +150 150
Unit
V V V V V V A W C C
Conditions
1 1.270.25
VB terminal, t = 1 min
10 2.50.2 0.4 0.05

+0.15 +0.15
0.250.05
a) Part No. b) Lot No.

Depends on surface-mount board pattern
1
Vcc
SFP5017
VB
17
clamp
OSC
Charge Pump TSD OCP

Sense MOS
D S
2.00.2
19
CMOS Logic
(Ta=25C)
Parameter
Min. operating power supply voltage Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current 1 Quiescent circuit current 2 PWM terminal input voltage PWM terminal input current Hold terminal input voltage Hold terminal input current Output ON resistance
OUT
Sense+
(VB=14V, Ta=25C unless otherwise specified) One circuit equivalent
PWM
2
70k
Symbol
VB min VB VCC Iqvb Iqvcc VPWMH VPWML IPWMH VHoldH VHoldL IHoldH RDSon
Ratings min
6 10 14 5.0 7.2 0.2 3.5 16
typ
max
Unit
V V V mA mA V
Conditions
Hold
3
18
lamp
+
Sense R
Minimum operation of OUT terminal.
70k
20
Sense
*1 *2
Vcc = 5V, VPWM = 0V, One circuit equivalent Vcc = 5V, VPWM = 0V Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3
S/H
5
S/H
LG
1.5 70 3.5 V 1.5 70 110 0.14 0.21 0.21 A A C 1.2 0.2 A V V V V mA mA 15 15 100 50 500 650 1 2 70 s s s s s s s s s Io = 0.5A, Vcc = 5V, C1 = 0.033F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033 F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C Io = 0.5A, Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A IOUT = 1A, Ta = 125C IOUT = 1A IOUT = 1A, Ta = 125C Vcc = 5V 110 A

1
VCC
VB
17
Controlling microcomputer CPU
2 3
1k 0.01 F
PWM Hold S/H
SFP5017
OUT Sense+ Sense
19 18 20 D1
5
5.1 k
Current sensing resistance Overcurrent protection starting current Thermal shutdown operating temperature Operation circuit for current monitor output
Rsense 0.25 Is Ttsd Io 3.0 150 0.2
C
4 C1
LG
6 D2
*4 *1
Io = 0A, Vcc = 5V Io = 0.2A, Vcc = 5V Io = 0.5A, Vcc = 5V, Ta = 40 to 140C Io = 1.2A, Vcc = 5V, Ta = 40 to 140C Io = 1A, Vcc = 5V, VSH = 0V Io = 1A, Vcc = 5V, VSH = 5V
VPWM
* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (0.8V)
Current monitor output voltage
VSH
0.488 1.219 2.925
0.500 1.250 3.000
0.512 1.281 3.075 5
Timing Chart
Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) Overcurrent protection Ordinary operation (auto hold)
Current monitor output current
ISH 6 t on t off
Output transfer time Output rise time Output fall time Current monitor output hold time Current monitor output delay time Hold time after inputting hold
Vout
tr tf t sh t shd t shh
Icoil VS/H
*1
500 to 650 usec
*1
500 to 650 usec
*2
VHold
Truth table VPWM VOUT L L H H
S/H settling time
t stt 80
Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
46
10.50.3
7.50.2
47
High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018
Features
Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1

Parameter
Power supply voltage 1 Power supply voltage 2 Power supply voltage 3 Current sensing voltage Output terminal voltage Input terminal voltage Output current Power dissipation Storage temperature Channel temperature
Symbol
VB Vcc VB Vsense+ Vsense VOUT VPWM VHold IOUT PD Tstg Tch
Ratings
0 to 32 0.5 to 7.0 0 to 40 0.8 to 6 Vsense+Io Rsense 2 to 32 0.5 to 7.0 2.0 2.0 40 to +150 150
Unit
V V V V V V A W C C
Conditions
1 1.270.25
VB terminal, t = 1 min
8 2.50.2 0.4 0.05

+0.15 +0.15
0.250.05

Depends on surface-mount board pattern
Vcc
2
11
clamp
OSC
Charge Pump TSD OCP

Sense MOS
D S
Parameter
Min. operating power supply voltage Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current 1 Quiescent circuit current 2 PWM terminal input voltage PWM terminal input current Hold terminal input voltage Hold terminal input current Output ON resistance
OUT
14
Sense+
PWM
3
70k
Symbol
VB min VB VCC Iqvb Iqvcc VPWMH VPWML IPWMH VHoldH VHoldL IHoldH RDSon
Ratings min
6 10 14 5.0 7.2 0.2 3.5 16
typ
max
Unit
V V V mA mA V
Conditions
Minimum operation of OUT terminal.
CMOS Logic
13
lamp
+
Sense R
Hold
4
70k
15
Sense
*1 *2
Vcc = 5V, VPWM = 0V Vcc = 5V, VPWM = 0V Vcc = 5V Vcc = 5V, VPWM = 5V, Active H Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A IOUT = 1A, Ta = 125C IOUT = 1A IOUT = 1A, Ta = 125C
S/H
6
S/H
LG
1.5 70 3.5 V 1.5 70 110 0.14 0.21 0.21 A A C 1.2 0.2 A V V V V mA mA 15 15 100 50 500 650 1 2 70 s s s s s s s s s Io = 0.5A, Vcc = 5V, C1 = 0.033F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033 F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C Io = 0.5A, Vcc = 5V 110 A

*3
2
VCC
11
VB
Controlling microcomputer CPU
3 4
1k 0.01 F
PWM Hold S/H
SFP5018
OUT Sense+ Sense
14 13 15 D1
6
5.1 k
Current sensing resistance Overcurrent protection starting current Thermal shutdown operating temperature Operation circuit for current monitor output
Rsense 0.25 Is Ttsd Io 3.0 150 0.2
C
5
C1
LG
7 D2
*4 *1
Io = 0A, Vcc = 5V Io = 0.2A, Vcc = 5V Io = 0.5A, Vcc = 5V, Ta = 40 to 140C Io = 1.2A, Vcc = 5V, Ta = 40 to 140C Io = 1A, Vcc = 5V, VSH = 0V Io = 1A, Vcc = 5V, VSH = 5V
VPWM
* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (0.8V)
Current monitor output voltage
VSH
0.488 1.219 2.925
0.500 1.250 3.000
0.512 1.281 3.075 5
Timing Chart
Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) Overcurrent protection Ordinary operation (auto hold)
Current monitor output current
ISH 6 t on t off
Output transfer time Output rise time Output fall time Current monitor output hold time Current monitor output delay time Hold time after inputting hold
Vout
tr tf t sh t shd t shh
Icoil VS/H
*1
500 to 650 usec
*1
500 to 650 usec
*2
VHold
Truth table VPWM VOUT L L H H
S/H settling time
t stt 80
Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
48
2.0 0.8
VB
+0.2
(Ta=25C)
7.50.2
49
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
Features
DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

12.2 0.2 10.5 0.2 16 9 1.0 0.05
Fin thickness
+0.1
(Ta=25C)
Parameter Power supply voltage Output terminal voltage Input terminal voltage Output current Power Dissipation Storage temperature Channel temperature Output avalanche capability
Symbol VB VOUT VIN IO PD Tstg Tch EAV
Ratings 40 37 0.5 to +7.5 1.8 2 40 to +150 150 50
Unit V V V A W C C mJ
Conditions
7.5 0.2
1 1.270.25 0.4 0.05

+0.15
8 2.5 0.2
0.25 0.05
+0.15
Single pulse
Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

VB VOUT 1
Gate Protction
Parameter Power supply voltage Quiescent circuit current Operating circuit current Hi output Input voltage Lo output Hi output Input current Lo output Output ON resistance Output clamp voltage Output leak current Forward voltage of output stage diode Overvoltage protection starting voltage Thermal protection starting temperature Overcurrent protection starting current Output transfer time TOFF Output rise time Output fall time Tr Tf 8 5 10 I IN 0.4 RDS (ON) 0.5 VOUT (clamp) I OH VF 41 50 0.7 55 10 1.6 30 0.6 VIN I IN 0.5 1.5 50 Symbol VBopr Iq ICC VIN 3.5 Ratings min 5.5 5 8 typ max 25 7 12 5.5
Reg. REF
(VB =14V, Ta=25C unless otherwise specified)

OVP Gate Driver
Unit V
Conditions
TSD OCP
P-GND VIN 1
mA mA V V A A V A V
VIN = 0V (all inputs) VIN = 5V (all inputs) IO = 1A

VIN 2
250 k typ
VOUT 2
VIN = 5V VIN = 0V
VIN 3
VOUT 3
VIN 4
VOUT 4
VB = 5.5V IO = 1A VO = 37V I F = 0.5A
L-GND
Circuit Example
VB (ovp)
25
40
V
VCC 2 10 7 15 5 VB
TTSD
151
165
IS TON
1.1 12
A s s s s RL = 14, I O = 1A RL = 14, I O = 1A RL = 14, I O = 1A RL = 14, I O = 1A
4 6 12 14 CONTROL UNIT IN1 IN2 IN3 IN4
OUT1 OUT3
OUT2 OUT4
SPF5002A
L-GND 13 P-GND 1,9
Truth table VIN VO

H L L H
Use L-GND and P-GND being connected.
Timing Chart
OVP
VB VOUT
VIN
Normal Overvoltage Overheat Overcurrent
50
* Self-excited frequency is used in the overcurrent protection.
2.0 0.8
+0.2
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
10

10
Circuit Current (4 circuits)

10
Ta = 25C
Ta = 25C Ta = 40C
Ta = 25C Ta = 40C
Iq (mA)
Id (mA)
Id (mA)
Ta = 40C
Ta = 125C
4
Ta = 120C
2
Ta = 125C
10
20
30
40
10
20
30
40
10
20
30
40
VB (V)
VB (V)
VB (V)

15
Output ON Voltage
1.0
Forward Voltage of Output Stage Diode

1.5
VB = 14V Ta = 40C Ta = 25C Ta = 125C

0.8 1.0
10
Ta = 125C Ta = 25C Ta = 40C
VDS (ON) (V)
VO (V)
Ta = 25C
0.4
I F (A)
0.5
0.6
Ta = 125C
5 VO = 14V IO = 0.1A 0 0 1 2 3
0.2
Ta = 40C
0 0 0.5 1.0 1.5 2.0 0 0 0.5 1.0 1.5
VIN (th) (V)
IO (A)
VF (V)

15
Overvoltage Protection Starting Voltage

15 IO = 0.1A
VB =14V
10
10
VO (V)
VO (V)
Ta = 40C Ta = 25C Ta = 125C
Ta = 120C Ta = 25C Ta = 40C

0 0 1.0 2.0 0 0 10 20 30 40
IO (A)
VB (V)
51
Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)
Features
DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load)

17.28 0.2 15.58 0.2 24 13 1.0 0.05
Fin thickness
+0.1

Parameter Power supply voltage Output terminal voltage (DC) Output terminal voltage (pulse) Output current (DC) Output current (pulse) Input terminal voltage Diag output source current Diag output voltage Power Dissipation Storage temperature Channel temperature Output avalanche capability Symbol VB VOUT VOUT IOUT IOUT V( IN, SEL, B/U) VDIAG I DIAG PD Tstg Tch EAV Ratings 40 50 Output clamping (max 70V) 2.9 Over current protection starting current 0.5 to +6.5 6.5 5 2.8 40 to +150 150 80 Unit V V V A A V V mA W C C mJ Single pulse Conditions
(Ta=25C)
1 1.27 0.25 0.4 0.05

+0.15
12 2.5 0.2
0.250.05
+0.15
a : Part No. b: Lot No.

VB (7) Ref Reg Gate driver VIN B/U (17) TSD VIN SEL (5) Set OUT OCP Latch Reset VIN 1 (6) OSC Monitor VOUT SENSE Gate Protection VOUT1 (4)
Parameter Power supply voltage Quiescent circuit current Operating circuit current Input voltage (1 to 4, SEL, B/U) Input current (single circuit) (1 to 4, SEL, B/U) Output ON resistance Output clamp voltage Output leak current Forward voltage of output stage diode Output moniter threshold voltage DIAG output voltage VDIAG (L) DIAG output leak current Thermal shutdown operating temperature Overcurrent protection starting current Output transfer time TOFF Output rise time Output fall time DIAG output transfer time t DOFF 8 Tr Tf t DON 8 5 10 12 I DH TTSD IS TON 151 3.0 12 165 0.5 10 Symbol VB (opr) Iq Id VIN (H) VIN (L) I IN (H) I IN (L) RDS (ON) VOUT (clamp) I OH VF Vt hM VDIAG (H) 6.4 60 65 3.5 0.5 Ratings min 5.5 9 12 typ max 40 12 15 6.5 1.5 200 30 0.18 70 50 1.5 2 6.5
VOUT2 (9)
(VB =14V, Ta = 25C unless otherwise specified)
VIN 2 (8)
Unit V mA mA V V A A V A V V V V A C A s s s s s s
Conditions
VOUT3 (16) VIN 3 (18) P-GND3 (13, 14) VDIAG3 (15) VOUT4 (21) VIN 4 (20) P-GND4 (23, 24) VDIAG4 (22) L-GND (19)
VB =14V, VIN=0V VB =14V, VIN=5V (all inputs) VB =14V, VO=1A VB =14V VB =14V, VIN=5V VB =14V, VIN=0V VB =14V, IO=1A VB =14V, IO=1A VB =14V, VO=50V I F =1A VB =14V VB =14V, VDIAG=6.5V VB =14V, IDIAG=5mA VB =14V, VDIAG=6.5V VB =14V VB =14V VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A
Circuit Example
7
6 8 18 20 17 5
16
21
VB VIN1 VIN2 VIN3 VIN4 VINB/U VINSEL LG

19
OUT1
OUT2
OUT3
OUT4 DIAG1 DIAG2 DIAG3 DIAG4 PG4

23, 24
3 10 15 22
SPF5009
PG1
1, 2
PG2
11, 12
PG3
13, 14
Timing Chart
Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1 Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal
OCP
OCP
Output 1 Output 1 Output 1 Overheat Over current Open load Main mode
Nomal
Output 1 Output 1 Output 1 Overheat Over current Open load Backup mode
52
2.00.8
+0.2
P-GND1 (1, 2) VDIAG1 (3)
P-GND2 (11, 12) VDIAG2 (10)
10.5 0.3
7.5 0.2
53
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012
Features
Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

17.28 0.2 15.58 0.2 24 13 1.0 0.05
Fin thickness
+0.1

Parameter Power supply voltage 1 Power supply voltage 2 Output voltage Logic input voltage Output current Diag output voltage Power Dissipation Storage temperature Channel temperature Output avalanche capability Symbol VB VCC VO VIN IO VDIAG PD Tstg Tch EAV Ratings 40 7.5 40 (DC) 0.5 to +7.5 Self Limited 0 to VCC 2.8 to 5 40 to +150 150 100 Unit V V V V A V W C C mJ Single pulse Conditions
(Ta=25C)
1 1.27 0.25 0.4 0.05

+0.15
12 2.5 0.2
2 0.2
0.250.05
+0.15
*1
a : Part No. b: Lot No.
*2

VCC1-2 (7) Diag1 (5) VB (19) Reg OVP TSD VIN1 (4) Gate driver OCP
Gate Protection VOUT1 (3)
* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate
Ch1
P. GND1 (1, 2)
Parameter Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current Operating circuit current Hi output Input voltage Lo output Hi output Input current Lo output Output ON resistance Output clamp voltage I IN RDS (ON) 0.2 VOUT (clamp) 45 50 55 2.8 Output leak current I OH 900 Forward voltage of output stage diode Overvoltage protection starting voltage VF VB (ovp) 25 8 151 6 Overcurrent protection operating current IS 6 5 TON Output transfer time TOFF Output rise time Output fall time Output-diag voltage ratio Diag output clamping voltage Tr Tf ra (DIAG) VDIAG (clamp) 0.195 0.2 8 5 10 0.205 4.85 12 165 1.6 40 30 0.3 VIN I IN 0.5 1.5 50 Symbol VB (opr) VCC (opr) Iq Id VIN 3.5 Ratings min 5.5 4.5 4 8 typ max 40 5.5 6 12 5.5
(VB =14V, Ta = 25C unless otherwise specified)
Unit V V mA mA V V A A V mA A V V V C A A A s s s s VB =14V
Conditions
VIN2 (9)
Ch2
Diag2 (8) VOUT2 (10) P. GND2 (11, 12) VCC3-4 (18) Diag3 (17) VOUT3 (15) P. GND3 (13, 14)
VB =14V, VIN=0V VB =14V, VIN=5V VB =14V, VO=1A VB =14V VB =14V, VIN=5V VB =14V, IO 1A VB =14V, IO=1A, Ta=125C VB =14V, IO=1A, Ta=25C VB =14V, IO=1A VB =14V, VCC=5V, VIN=0V, VO =40V, Ta=25C VB =14V, VCC =5V, VIN=0V, VO =14V, Ta=25C I F=1A
VIN3 (16)
Ch3
VIN4 (21)
Ch4
L. GND (6)
Diag4 (20) VOUT4 (22) P. GND4 (23, 24)
Circuit Example
18
19
10
15
22
VCC1-2 VCC3-4 VB VCC

4 9 16 21
VOUT1 VOUT2 VOUT3 VOUT4 Diag1 Diag2 Diag3 Diag4

5 8 17 20
Input signal
VIN1 VIN2 VIN3 VIN4 L-GND

6
SPF5012
1, 2 11,12 13,14
Diag output
Overvoltage protection hysteresis voltage VB (ovphys) Thermal shutdown operating temperature TTSD
P-GND1 P-GND2 P-GND3 P-GND4

23,24
VB =14V, Ta=40C VB =14V, Ta=25C VB =14V, Ta=125C
Truth table VIN VO

H L L H
Short L-GND and P-GND in a pattern near the product.
VB=14V, RL=14, I O=1A
VB =14V, VO =1 to 14V, Rdiag=500k V VB=14V, VCC=5V, VO =40V
Timing Chart
OVP
VB VOUT
VIN
Normal Overvoltage Overheat Overcurrent
54
* Self-excited frequency is used in the overcurrent protection.
10.5 0.3
7.5 0.2
55
Stepper-motor Driver ICs SLA4708M
Features
High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50A

31.00.2 3.20.15 24.40.2 16.4
0.2
Ellipse 3.20.15 3.8 4.80.2 1.70.7 Lead plate thickness resins 0.8 max 12
16.00.2
13.00.2
8.5max
9.90.2
a b
2.7
Parameter Power supply voltage Breakdown voltage Input voltage Output current Diagnostic output sink current Diagnostic output withstand voltage Operating temperature Storage temperature Power Dissipation
Symbol VS VO VIN IO, AVE IDIAG IDIAG. H Top Tstg PD
Ratings 35 50 0.3 to +7 1.5 10 7 40 to +85 40 to +150 3.5 (Ta=25C)
Unit V V V A mA V C C W
Conditions
9.5min (10.4)
(Ta=25C)
Pin 1 1.20.15 11P2.54 0.85 0.1 1.45

0.7 +0.2 0.15 1.0
0.55 0.1
+0.2
2.20.7
=27.94
31.5 max
1 2 3 4 5 6 7 8 9 10 11 12
Without heatsink
Standard Circuit Diagram Electrical Characteristics

Parameter Input voltage (I A/A, I B/B standby) Input current Symbol VIL VIH I IL I IH VO.STA Output saturation voltage Output leak current Overcurrent detection Overvoltage detection Saturation voltage of diagnostic output Standby current VO.STA I O.LEAK I SD VSD VDIAG.L I STB 50 1.8 27.5 0.3 2.4 0.8 50 1.3 1.5 100 Ratings min typ max 0.8 Unit V V mA A V V A A V V A I DIAG = 5mA VS = 12V VIN = 0.4V VIN = 2.4V
5V 2 STBY P-GND 6 L-GND 11 L-GND 7 N.C. 4 OUTA 5 OUT A 9 OUT B 8 1 OUT B VS 12 DIAG 3 I
A /A
(VS =12V, Ta=25C)

C + ZD
Conditions
SLA4708M
I B/B 10
CPU
ZD: VS <35V C 100F (Reference)
I O = 1A, Ta = 25C I O = 1.5A, Ta = 25C VO = 16V
4.7 k
Stepper motor
56
Stepper-motor Driver ICs SLA4708M
Power Supply Current Characteristics
200 20

14
Saturation Voltage of Output Transistor Characteristics

Saturation voltage of output transistor Vsat (V)
2.0
Constant (ST = 5V)

12
Output voltage VO (V) Power supply current At Constant IS (mA) At standby IS (A)
Ta = 25C Vcc=12V Common for all phases
Vcc (Vs) =16V Ta =25C

1.5
Common for all phases
10 8 6 4 2
100
10
1.0
At standby (ST = 0V)
0.5 0
0 0
10
20
30
0 0 10 20 30 35
Power supply voltage VS (V)
1.0
2.0
3.0
Power supply voltage VS (V)

14 12
Vcc (Vs) =12V VST = 5V
10 8
T j2
6 4 2 0 0 110 120 130 140 150
T j1
160
Junction temperature Tj (C)
57
2-ph Stepper-motor Driver ICs SPF7211
Features
Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) Built-in recovery diode Built-in standby function Built-in overcurrent and thermal protection circuits and low voltage input shutoff function Built-in overload and disconnection detection function

17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1
Parameter Main power supply voltage Input voltage

Output current Flag terminal withstand voltage Flag terminal current Detect voltage Power dissipation Junction temperature Operating temperature Storage temperature
Symbol VBB VIN Io IoPeak VFlag IFlag VRs

PD Tj Top Tstg
Ratings 40 0.3 to 15 0.8 1.0 7 3 2 to 2 4.1 39 150 40 to 110 40 to 150
Unit V V
A V mA V W C C C
Remarks
VIN VBB
1 1.270.25 0.4 0.05

+0.15
12 2.50.2
20.2
Tw 1mS VFlag VBB For Ta = 25C * 1 For Tc (Ttab) = 25C
0.25 0.05
+0.15
Note: *1: With glass epoxy + copper foil board (size 5.07.4cm; t: glass epoxy = 1.6mm /copper foil = 18 m)
Recommended Operation Range

Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Operating temperature

Ratings 6 to 18 0.3 to 7.0 0.5 0 to 7.0 0 to 1.0 1 to 1 40 to 110 Unit V V A V mA V C Remarks
VIN VBB Continuous VFlag VBB
PC (ECU)
Rs
Parameter
Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output leak current
Symbol
IBB IBBS VUVLO VUVLOhys IoleakL IoleakH VsatL
min
Ratings typ
3.5 0.5 100
max 50 50 4.5
Unit
mA A V V A A V V V V V V V V V V A A A A mV mV mV kHz kHz V V A A V V V V mV A V mA S S Hz S S S S S S S S S S S S S C C C C
Conditions
In ordinary operation (no load) At sleep
Ct 2200pF
Output saturation voltage VsatH Recovery diode forward voltage Input voltage Hysteresis voltage Ph terminal Input current V FL V FH VFGO VIL VIH VIhys IIL IIH IIL IIH VRs Fosc FPWM VctL VctH Ictsink Ictsouce VocpL VocpH VocpL VocpH Vopen IleakFlag VFlagL IFlag Tpw Tpws Fclock Pulse tocp1 tocp2 tocp3 topen1 topen2 tonH1 toffH1 tonH2 toffH2 tonL1 toffL1 tonL2 toffL2 Tj Tj Talarm Talarm
100 0.5 0.8 1.2 1.5 1.2 1.3 1.2 0.8 2.0 0.5 5 5 30 660 420 40 28.8 14.4 700 450 70 48 24 0.5 1.5 720 120 3.0 VBB2.0 5 5 50 740 480 90 72 36
VBB = 40V, Vo = 0V VBB = Vo = 40V Io = 0.5A Io = 0.8A Io = 0.5A Io = 0.8A Io = 0.5A Io = 0.5A Io = 0.5A
2-phase excitation
Clock Ph1 I10, I11 Ph2 I20, I21 0 L H L H
Excitation Signal Time Chart

1 H H L H 2 H H H H 3 L H H H 0 L H L H 1 H H L H
1 to 2-phase excitation
Clock Ph1 I10, I11 Ph2 I20, I21 0 L H L H 1 H L L H 2 H H L H 3 H H H L 4 H H H H 5 L L H H 6 L H H H 7 L H L L 0 L H L H 1 H L L H 2 H H L H 3 H H H L
Input terminal
Ixx, Set terminals Input current Detect voltage Oscillation frequency PWM frequency Ct terminal threshold voltage Ct terminal current
VIL = 0.8V VIH = 2.0V Ix0 = High, Ix1 = High Ix0 = Low, Ix1 = High Ix0 = High, Ix1 = Low Ct = 2200pF 20% Ct = 2200pF 20%
* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.
*1
Out voltage Out voltage VBB = 5.5V VBB = 5.5V Sence voltage VFlag = 7V IFlag = 1mA In ordinary operation At sleep Ct = 2200pF In ordinary operation; Ct = 2200pF At switching the phase When Ixx shifts from L to H In ordinary operation When Ixx shifts from L to H
Overcurrent detection voltage Open detection voltage Flag terminal leak current Flag terminal saturation voltage Flag terminal current Response pulse width Set terminal Pulse rate Pulse number Flag response time OCP operation Open operation
1.5 VBB2.5 1.0 VBB2.3
4.2 VBB1.7 1.85 VBB1.5 10 0.5 3
60
10 100 17 2.5 5.0 5.0 2.5 2.5
24 256 5.0 10.0 10.0 5.0 5.0 1.5 1.5
31 10.0 20.0 20.0 10.0 10.0
I/O propagation time
100 100 2.0 0.5 100 100 150 120 20 130 20 140
Thermal protection temperature Thermal protection hysteresis Thermal alarm temperature Thermal alarm hysteresis
*2
58
Note: *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values.
I11 Ph1 Ct Set GND GND GND Out1A Rs1 VBB 12 Out1B
Symbol VBB VIN Io VFlag IFlag VRs Top
I20 24 I21 Ph2 FL1 GND GND GND GND Out2A Rs2 FL2 Out2B 13
SPM
1 I10
Rs VBB = 6 to 18V +
Rs 1 typ (1 to 2W) IoM VRs/Rs
10.50.3
7.50.2
2-ph Stepper-motor Driver ICs SPF7211
Vsat Temperature Characteristics (Io=0.5A)
1.2 1 0.8 0.6 0.4 0.2 0 30 10 10 VsatL VsatH
Forward voltage VF (V)
Diode VF Characteristics (IF=0.5A)

1.7 VFGO 1.5 1.3 1.1 0.9 0.7 0.5 30 10 10 VFH VFL
Saturation voltage Vsat (V)
30 50
70 90 110 130 150
30 50
70 90 110 130 150
Junction temperature (C)
OSC Temperature Characteristics

55
Oscillation frequency FOSC (kHz)
Ta-PD Characteristics
40 Infinite heatsink equivalent (Tc=25C) j-tab 3.2C/W
Power dissipation PD (W)
53 FOSC 51
30
20
49
47 Ct=2200pF 45 30 10 10 30 50 70 90 110 130 150
10 Copper foil area (5.07.4mm, t=18m) j-a 30.5C/W 0
25
50
75
100
125
150
59
Full Bridge PWM Control DC Motor Driver ICs SI-5300
Features
P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package)

(28.4) 4.80.2
2.70.2
a
(4.5)
16.10.2
(R0.8) (4) R-end 7.60.5
(R0.8) 0.750.1
+0.2
14 P2.030.1=(28.42)
0.450.1
+0.2

Parameter Motor supply voltage Symbol VM IN1 Input terminal voltage IN2 PWM IO Output current IO (p-p) PWM control frequency Forward reverse rotation switch frequency* Operating temperature Junction and channel temperature Storage temperature Thermal resistance j-a PD1 Power dissipation PD2 33.7 W With infinite heatsink 35 3.6 C/W fPWM fCW TOP Tj, Tch Tstg j-c Ratings 40 0.3 to 7 0.3 to 7 0.3 to 7 5 17 20 500 40 to +85 40 to +150 40 to +150 3.7 Unit V Conditions
(Ta=25C)
350.3
20.5 4.50.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V V V A A kHz Hz C C
IN1
Dead Time Nch1 PWM down edge sense A OCP B Dead Time OCP B
Equivalent Circuit
VM VM
B
VM
B OCP Pch1 Pch2
PW
1ms, Duty
50%
Pre-Rec OCP
Duty=20% to 80%
TSD
B A Q R
A FF S B
OUT1
OUT2
Nch2 A
PULL-UP Resistor
C C/W
PWM
DIAG CONTROL
TDIAG
CDIAG 1F
IN2
Without heatsink
A A
LGND PGND PGND
Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20s (typical). Please take into account the dead time and consider the load conditions when you use the IC.

Relay Capacitor 220F Battery
Parameter
Motor supply voltage Output saturation voltage
(Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A)
Symbol
VIN V, VM-VO V, VO-PG I L, L I L, H tpLH
Ratings
min 6 typ max 18 0.8 0.3 100 100 10 2
Unit
V V V A A s s s V V V V mA mA mA V IO=3A IO=10A IO=3A IO=10A
Conditions
VM=24V (2 min.) IO=3A IO=3A VM=40V VM=40V VPWM: L VPWM: H H (Vth=2.5V typ) L (Vth=2.5V typ)
Pull-up Resistor 10k (Open Collector) VCC CPU 7 PWM 10 DIAG 6 IN1 11 IN2
3, 5, 13 VM 1, 2 OUT1
14, 15 OUT2
3.60.5
ECU inside VCC
DIAG
SI-5300
8 LGND Delay Capacitor 1F 4,12 PGND
Output leakage current
Output transmission time
tpHL tpHL-tpLH
* 15 *3
10 0.8 1.0 0.8 1.0 22 22 16 3.0 2.0 100 200 16 20 0.3
9 TDIAG
Forward voltage characteristic of diode between drain and source
VF L
VF H IM1
Timing Chart
Forward Duty ON Therminal name IN1 IN2 PWM High inpidance OUT1 High inpidance OUT2 GND IOUT (A) High inpidance Forward Duty OFF Reverse Duty ON Reverse Duty OFF Stop (Free Run) Stop (Free Run) Breake Breake
Stop mode Forward and reverse mode Brake mode VIN1=VIN2=VPWM VIN1=VIN2=VPWM VIN1=VIN2=VPWM=0V VIN1=VIN2=VPWM=5V 1
Static circuit current
IM2 IM3
Input terminal voltage
VIN, H VIN, L
V A A A ms V
Input terminal current OPC start current DIAG output pulse width DIAG terminal voltage
IIN, L IIN, H IOCP t DIAG VD L
C=1F (typ) ID SINK=1mA
*4
VM=2V VM IN1 IN2 PWM VM-OUT1 (Pch1 VDS) VM-OUT2 (Pch2 VDS) VOUT1-GND (Nch1 VDS) VOUT2-GND (Nch2 VDS) OUT1 OUT2
Protection circuit
Return to constant action VM=2V
Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.
*2: Output transmission time (tpLH)

VPWM (5V)
*3: Output transmission time (tpHL)

VPWM (5V)
PWM terminal
Vth VOUT GND VOUT*0.9
OUT terminal
GND tpLH
Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.
PWM terminal
Vth GND
OUT terminal
VOUT *0.1 tpHL GND
Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.
*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.
IOUT (A) TDIAG DIAG DIAG Threminal VCC=5V Pull-up 20ms (min)
60
Full Bridge PWM Control DC Motor Driver ICs SI-5300
Output saturation voltage (Pch)
1.0
VM=14V
Output saturation voltage (Nch)

0.5
VM=14V
Forward voltage of Diode between drain and source

12
Ta=25C
0.8 Ta=150C Ta=85C Ta=25C 0.4 Ta=40C
0.4
10
Ta=150C
I FSD (A)
0.6
VVO -PG (V)
VVM -VO (V)
0.3
Ta=85C Ta=25C Ta=40C
8 6 4
Nch MOS FET
0.2
Pch MOS FET
0.2
0.1
2 0
4
I O (A)
3
I O (A)
0.2
0.4
0.6
VFSD (V)
0.8
1.0
1.2
Quiescent circuit current

25 Duty on 20 Brake Duty off
I M (mA)
Voltage of input terminal (Threshold voltage)

16
VM=14V
Current of input terminal (SINK current)

0.6
VM=14V
0.5 12 0.4
VO (V)
Ta=150C Ta=85C Ta=25C Ta=40C
Stop
Ta=150C 8 Ta=25C Ta=40C 4
I SINK (mA)
15
0.3 0.2
10
5
I O=0A Ta=25C
0.1
10
20
VM (V)
30
40
0 0 1 2 3 4 5 6 7
VIN1, IN2, PWM (V)
0 0 1 2 3 4 5 6 7
VIN1, IN2, PWM (V)
Current of input terminal (Source current)

12
I IN1=I IN2=PWM=0V
VTDIAG VDIAG Characteristics

6
VM=14V
Pull-up resistance =3k
Thermal shut down protection

6
VM=10V I O=0A
10
IIN1, IIN2, PWM source (A)
Ta=150C Ta=25C Ta=40C

VDIAG (V)
5 4 3 2 1 0 Ta=150C Ta=25C Ta=40C
5 4
VDIAG (V)
8 6 4 2 0
3 2 1 0 100
10
20
VM (V)
30
40
3
VTDIAG (V)
125
150
Ta (C)
175
200
Pch MOS FET Safe Operating Area (SOA)

100
Tc=25C 1ms
Nch MOS FET Safe Operating Area (SOA)

100
Tc=25C
PD Ta Characteristics
40
Allowable Power Dissipation PD (W)
35 30 25 20 15 10 5
Infinite heatsink (Tc =25C)
1ms
10ms
I OUT (A) I OUT (A)
10
10
10ms
100ms
100ms
No heatsink
0.3 2 10
VM-OUT (V)
0.3 40 100 2 10
VOUT -PG (V)
40
100
0 40 30
25
50
75
100
61
Full Bridge DC Motor Driver ICs SPF7301(under development)
Features
A DMOS of low ON resistance (0.1 typ) is mounted on the high and low side power elements Two input signals control the forward/reverse/brake of a DC motor Current limit and overcurrent protection circuits Low voltage and thermal protection, excess input detecting output and input terminal open protection

14.740.2 13.04 20
0.2
1.0 0.05
Fin thickness
+0.1
11 10.50.3 0.250.05 2.50.2

+0.15

Parameter
Main power supply voltage Input terminal input voltage EN terminal voltage Disable terminal input voltage Output current DIAG output current DIAG inflow current Power dissipation Junction temperature Operating temperature Storage temperature
Thermal resistance (junction to case) Thermal resistance (junction to ambient air)
(Ta=25C)
Symbol
VB VIN1,VIN2 VEN VDI Io IoPeak VDIAG IDIAG P D1 P D2 Tj Top Tstg j-c j-a
Ratings
0.3 to 36 0.3 to 6 0.3 to 12 0.3 to 6 7 15 0.3 to 6 3 39 4 40 to 150 40 to 105 40 to 150 3.2 31
Unit
V V V V A A V mA W W C C C C/W C/W
Remarks
1 1.270.25 0.4 0.05

+0.15
10
20.2
7.50.2
1kHz, Duty 1%, Pulse 10S DIAG terminal sink current With an infinite heatsink mounted
*1

EN CP VB Power supply IN1 Ccp DIAG Vcc RDIAG
Note: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18 m)

Parameter
Main power supply voltage DI terminal input voltage Input terminal input voltage Output current DIAG terminal voltage Operating temperature
Full Brige Driver IC

IN2 DI
OUT1 M OUT2
SFP7301
Symbol
VB VDI VINx Io VDIAG Top
Ratings
8 to 18 0.3 to 5.3 0.3 to 5.3 1 0.3 to 5.3 40 to 105
Unit
V V V A V C
Remarks
Cin R1 R2 RDI PGND
LGND
Parameter
Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output terminal leak current
(Tj = 30 to 125C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20k unless otherwise specified) * 2 min
* Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20k Input terminal pull-down resistance R1, R2, RDI: 10k
Symbol
IBB1 IBB2 VuvloH VuvloL UVLO IleakHS IleakLS RDS(ON)_1H RDS(ON)_2H RDS(ON)_1L RDS(ON)_2L VF_H1 VF_H2 VF_L1 VF_L2 Iocp1_H1 Iocp1_H2 Iocp1_L1 Iocp1_L2 Iocp2_H1 Iocp2_H2 Iocp2_L1 Iocp2_L2 VINxH VINxL IINxH IINxL VDIxH VDIxL IDIxH IDIxL VENth IENH IENL VDIAG IDIAG IDIAGL TdON TdOFF Tr Tf Tddis VOVP VOVP Ttsd_ON Ttsd
Ratings typ 15
max 100 7.0 6.5
Unit
mA A V V V A A m m m m V V V V A A A A A A A A V V A A V V A A V A A V mA A S S S S S V V C C
Conditions
For VEN = 0V
5.0 4.5 0.5 100 100 100 100 100 1.5 1.5 1.5 1.5 7 7 7 7 15 15 15 15
Output DMOS RDS (ON)
100 200 200 200 200
Forward voltage characteristics between output DMOS and DS
Io1 = 1A Io2 = 1A Io1 = 1A Io2 = 1A
Overcurrent limiting operation current
4.5 4.5 4.5 4.5
10 10 10 10
OPC start current Input terminal voltage VIN1, VIN2 Input terminal current VIN1, VIN2 DI terminal voltage DI terminal current EN terminal input voltage EN terminal input current DIAG terminal output voltage DIAG terminal output current DIAG terminal leak current
2 0.8 100 100 2 0.8 100 100 0.8 10 1.5 10
VDI = 5V VDI = 0V
VDI = 5V VDI = 0V VEN = 5V VEN = 0V IDIAG = 0.5mA For VDIAG = 1.6V Time from VINxH to Voutx0.2 Time from VINxL to Voutx0.8 Time of Voutx from 20% to 80% Time of Voutx from 80% to 20% Time from DIthH to Voutx0.2
4 100 10 0.8 15 20 15 6 6 4 45
Input delay time
Overvoltage protection operation voltage OVP hysteresis width Thermal protection starting temperature Thermal protection hysteresis width
35 151
40 5 165 15
*3 *3
62
Note: *2: For the electrical characteristics for Tj = 40 to 150C, the design warranty applies to the above specification values. *3: Thermal protection starting temperature is 165C (typ) by design. The above parameters are the design specifications.
63
High Voltage Full Bridge Drive ICs SLA2402M
Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

31.0 0.2 3.2 0.15 24.4 0.2 16.4 0.2
Ellipse 3.2 0.15 3.8
4.80.2 1.70.1
Lead plate thickness resins 0.8 max
8.5 max

Parameter Power source voltage Input voltage Output voltage Output current Power dissipation Storage temperature Operation temperature Symbol Ratings 500 15 500 15 5 (Ta=25C) 40 to +125 40 to +105 Unit V V V A W C C PW 250s Conditions
9.90.2
13.00.2 2.7
VM VIN VO IO PD Tstg Topr
0.65
+0.2 0.1
1.0 0.1
+0.2
9.5 min
16.00.2
2.450.2 0.55 0.1

+0.2
17 P1.68 0.1 =28.56
31.5 max
Without heatsink
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Parameter Power MOS FET output breakdown voltage Power MOS FET output leakage voltage High-side Power MOS FET output on-state voltage Low-side Power MOS FET output on-state voltage Symbol BVOUT IOUT (off) VOUT (on) 1 VOUT (on) 2 VOUT (on) 1 VOUT (on) 2 ICC 1 Quiescent circuit current ICC 2 Operating circuit current Input voltage (High level) Input voltage (Low level) ICC 3 VIH VIL t d (on) Delay time 1.4 3.3 2.5 15 0.8VCC 0.2VCC 4.0 4.0 mA mA V V s s s V VCC=10V, VM=400V VCC=10V, VM=400V VCC=4.5 to 15V VCC=4.5 to 15V VCC=10A, VIN=10V, VM=85A, IO=0.41A 40 to +105C 0.28 1.4 0.28 1.4 0.4 2.0 0.4 2.0 Ratings min 500 100 0.52 2.6 0.52 2.6 3.0 typ max Unit V A V V V V mA IO=100A VO=500V IO=0.4A, VIN=10V IO=2A, VIN=10V IO=0.4A, VGL=10V IO=2A, VGL=10V VCC=4.5 to 15V Conditions
Block Diagram
7 MOSQ1 D1 HO1 MOSQ'1 GL1 LO1 VIN1
+12V MOSQ2 HO2 15 OUT2 MOSQ'2 VIN2 LO2 L GND GL2 17
4 OUT1 2
VCC MIC HV
10
11
13
16
CPU
* Dotted Line: Outside Connection
Timing Chart
VCC IN1 IN2 HO1 LO2 Ignition OSC 400Hz
t d (off) t
Operating voltage
VCC
* About delay time

Signal input waveform vs output waveform
1 Highside switch turn-on, turn-off
VIN1 0V 0V VOUT1 10% 10% 10%
2 Lowside switch turn-on, turn-off

HO2
VIN1 0V 10% 10%
LO1 HV 0V 100V OUT2-GND 400V
0V 10% 10% VOUT2 10%
td (on)
td (on)
td (on)
td (on)
* t: t = td (on) td (off)
Measurement Circuit
VIN1 VOUT1 RL VOUT2 VIN2
Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207)
* When pulse signal is inputted to VlN1,

VIN2 VIN1 VM
RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.
64
3.0
Quiescent circuit current ICC1 (mA) Quiescent circuit current ICC2 (mA)
Quiescent circuit current supplied high voltage

3.0 2.5 2.0 1.5 25C 1.0 40C 0.5 0 150C 105C VIN=0V VCC=10V
Operating circuit current

3.0 VCC=VIN1(2)=10V
Operating circuit current ICC3 (mA)
VIN=0V 2.5 2.0 1.5
150C 105C
2.5 2.0 1.5 1.0 0.5 0 25C 40C
25C
150C 105C
40C 1.0 0.5 0 0 5 10 15 20

Operation voltage VCC (V)
100
200
300
400
500
100
200
300
400
500
High voltage VM (V)
High voltage VM (V)

5 VIN=0V VM=400V 4 150C 105C 3 25C 2 40C 1

3.0
Quiescent circuit current ICC2 (mA)

3.5
Ta=25C 2.5 2.0
VCC= 15V
Ta=25C 3.0 2.5 2.0 1.5 1.0 0.5 0
VCC= 15V
12V 1.5 1.0 0.5 0 10V 9V
12V 10V 9V
4.5V 0 100 200 300 400 500
4.5V
0 0 5 10 15 20
100
200
300
400
500
High voltage VM (V)
High voltage VM (V)
Output on-state voltage

10 VCC =VIN =10V
Output on-state voltage (V)
Gate drive voltage

10 VCC=10V 8
Gate drive voltage VGL (V)
Gate drive voltage

10 Ta=25C 8
8 150C 105C 4 25C 2 40C
VCC=15V VCC=9V
VCC= 4.5V
0 0 1 2
Output current (A)
0 50
0 0 50 100 150 0 5 10 15
Ambient temperature (C) Input voltage VIN (V)

5 VCC=VIN=10V
Input threshold voltage

8
Input threshold voltage VIH, VIL (V)
7 6 5 4 3 2 1 0 50
VCC=10V VIH
Output on-state voltage (V)
3 I O=2A 2
VIL
1 I O=0.4A 0 50
50
100
150
50
100
150
Ambient temperature (C)
65
High side switch turn-on, off
5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s) turn-on, off (s)

5.0 VM=85V, I O=0.41A VCC=10V 4.0 turn-off turn-off
Low side switch turn-on, off

5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s)
turn-off 3.0
3.0
3.0
2.0
2.0 turn-on
2.0 turn-on 1.0
1.0
turn-on
1.0
0 4 6 8 10 12 14 16
0 50
0 0 50 100 150 4 6 8 10 12 14 16
Ambient temperature (C) Operation voltage VCC (V)

5.0 turn-off VM=85V, I O=0.41A VCC=10V 4.0
turn-on, off (s)
Transient thermal resistance characteristics

100
Transient thermal resistance (C/W)
Safe operating area (Power MOS FET)

100 RDS (on) limited 10
Drain current (A)
10
100s 1ms 1 10ms 0.1
3.0
2.0 turn-on 1.0
0.1
0.01
Ta=25C Single pulse 0.01 0.1 1 10 100 0.01 10
Ta=25C Single pulse 100

Drain to source voltage (V)
0 50
50
100
150
0.001 0.0001 0.001
1000
Power time (s)
Power derating curve

6 5
Power dissipation (W)
without heatsink
4 3 2 1 0 50
50
100
150
66
67
Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

31.0 0.2 3.2 0.15 24.4 0.2 16.4 0.2
Ellipse 3.2 0.15 3.8
4.80.2 1.70.1
8.5 max

Parameter Power source voltage Input voltage Output voltage Output current IO (peak) Power dissipation Storage temperature Operation temperature Junction temperature PD 40 (Tc=25C) Tstg Topr Tj 40 to +125 40 to +125 150 W C C C With infinite heatsink 15 5 (Ta=25C) A W PW Symbol Ratings 500 15 500 7 Unit V V V A Tc=25C 250s Conditions
9.90.2
13.00.2 2.7
VM VIN VO IO
0.65
+0.2 0.1
1.0 0.1
+0.2
9.5 min
16.00.2
2.450.2 0.55 0.1

+0.2
17 P1.68 0.1 =28.56
31.5 max
Without heatsink
Block Diagram
* Power GND (D terminal) to -HV (-HV terminal) voltage.
4 D1
MOSQ1 HO1 MOSQ'1 GL1 LO1 VIN1 HV VIN2 VCC MIC LO2 L GND HO2
MOSQ2
D2
15 OUT2 14 16
Parameter Power MOS FET output breakdown voltage Power MOS FET output leakage voltage High-side Power MOS FET output on-state voltage Lowside Power MOS FET output on-state voltage Quiescent circuit current
Symbol BVOUT IOUT (off) VOUT (on) VOUT (on) ICC 1 ICC 2
Ratings min 500 100 0.18 0.18 0.26 0.26 0.34 0.34 3.0 4.0 4.0 0.8VCC 0.2VCC 2.0 3.0 6 15 typ max
Unit V A V V mA mA mA V V s s V IO=100A VO=500V
Conditions
5 3
OUT1
MOSQ'2 GL2
10
11
13
17
CPU
IO=0.4A, VIN=10V IO=0.4A, VGL=10V VCC=6 to 15V VCC=10V, VM=400V VCC=10V, VM=400V VCC=6 to 15V VCC=6 to 15V VCC=10A, VIN=10V, VM=85V, IO=0.41A 40 to +125C
Timing Chart
VCC IN1 IN2 HO1 LO2 HO2 Ignition OSC 400Hz
Operating circuit current Input voltage (High level) Input voltage (Low level) Delay time
ICC 3 VIH VIL t d (on) t d (off) VCC
Operating voltage
* About delay time

VIN1 0V 0V VOUT1 10% 10% 10%

LO1
VIN1 0V 10% 10%
HV
0V 100V
0V 10% 10% VOUT2 10%
OUT2-GND
400V
td (on)
td (on)
td (on)
td (on)
* t: t = td (on) td (off)
Measurement Circuit
VIN1 VOUT1 RL VOUT2 VIN2
VIN2
VIN1

VM
68
3.0
Quiescent circuit current ICC1 (mA) Quiescent circuit current ICC2 (mA)

3.0 150C 125C 85C VIN=0V VCC=10V 150C 125C 85C 1.5 25C 1.0 40C 0.5 0

4.0 VCC=VIN1(2)=10V
VIN=0V 2.5 2.0
2.5 2.0
3.5 3.0 2.5 85C 2.0 25C 1.5 1.0 0.5 0 0 100 200 300 400 500 40C 150C 125C
25C 1.5 40C 1.0 0.5 0 0 5 10 15 20

100
200
300
400
500
High voltage VM (V)
High voltage VM (V)

5

3.5 Ta=25C

4.0 Ta=25C
VIN=0V VM=400V 4
150C 125C 85C 3.0 2.5 2.0 1.5 1.0 0.5 0
VCC= 15V
3.5 3.0 2.5 2.0 1.5 1.0
VCC= 15V
25C
12V 10V 9V 6V
12V 10V 9V 6V
40C
0.5 0 0 100 200 300 400 500
0 0 5 10 15 20
100
200
300
400
500
High voltage VM (V)
High voltage VM (V)

6
VOUT (ON) (V)

10
Gate drive voltage

10 Ta=25C VCC=10V
VCC=VIN=10V
Input threshold voltage VIH (V)
5 4 3 2 1 0 0 1 2 3
I OUT (A)
VCC=15V 8 VCC=10V VCC= 6V
150C 125C 85C 25C 40C
6 VCC=6V 4
0 50
0 0 50 100 150 200 0 5 10 15

Output current

4
Output on-state voltage VOUT (ON) (V)

7
Gate drive voltage

10
VCC=VIN=10V
Input threshold voltage VIL (V)
6
8 VCC=10V 6 VCC=6V
5 4 3 2 1 0 50 VCC=10V
I O=2A
1 I O=0.4A 0 50
VCC=6V
50
100
150
50
100
150
0 50
50
100
150
69
5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s) turn-on, off (s)

5.0 VM=85V, I O=0.41A VCC=10V 4.0

5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s)
turn-off 3.0
3.0
turn-off
3.0
turn-off
2.0 turn-on 1.0
2.0
turn-on
2.0 turn-on
1.0
1.0
0 4 6 8 10 12 14
0 50
0 0 50 100 150 4 6 8 10 12 14

5.0 VM=85V, I O=0.41A VCC=10V 4.0
turn-on, off (s)

100
Safe operating area (Power MOS FET)

100 RDS (on) limited 10s 100s 1ms 1 10ms 0.1
10
Drain current (A)
10
turn-off 3.0
2.0
turn-on
0.1
1.0
0.01
Ta=25C Single pulse 0.01 0.1 1 10 100 0.01 10
Ta=25C Single pulse 100

Drain to source voltage (V)
0 50
50
100
150
0.001 0.001
1000
Power time (s)

50 Tc=25C
PD (W) Power derating
40
30
20
10 without heatsink 0 50
50
100
150
70
71
High Voltage Full Bridge Drive ICs SMA2409M
Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) High Voltage Driver which accepts direct connection to the input signal line

31.0 0.2 4.00.2

Parameter
Power supply voltage Input voltage Operation voltage Output voltage Output current (DC) Output current (pulses) Power dissipation Thermal resistance Operating temperature Storage temperature Junction temperature IGBT single pulse avalanche resistance ESD protection
(Ta = 25C)
2.70.2
Symbol
VM VIN Vcc Vo Io(DC) Io(pulse) PD j-a j-c Topr Tstg Tj EAS ESD
Ratings
500 15 15 500 7 15 4 20 31.2 6.2 40 to +105 40 to +150 150 5 2
Unit
V V V V A A W CW C C C mJ kV
Conditions
Power GNG to HV
1.16 0.1 14 P2.03 0.1= (28.42)
(root dimensions)
+0.2
0.65 0.1 0.55 0.1

+0.2
+0.2
(10.4)
10.20.2
1.2 0.2
(root dimensions)
Single pulse (PW = 50s max.) Tc = 25C Tc = 25C
31.3 0.2

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A Human body model (C = 100pF, R = 1.5k)
Block Diagram
Parameter
IGBT output breakdown voltage IGBT output leak current IGBT output ON voltage Quiescent circuit current Operating circuit current Input threshold voltage Low-side IGBT gate drive voltage High side Delay time* Low side
(Ta = 25C)
4 OUT1 2
D1
IGBT Q1 HO1
VCC HO2
IGBT Q2
D2
Symbol
BVOUT IOUT (off) VOUT (on) Icc1 Icc2 Icc3 VIH VIL VGL t d (on) t d (off) t d (on) t d (off) td
Ratings min
570 100 1.0 1.3 1.2 1.8 3.0 4.0 4.0 0.8Vcc 0.2Vcc 0.8Vcc 0.6 1.8 0.8 1.3 0.7 2.2 0.9 1.6 16 0.8 2.6 1.0 1.9 2.5 9 15
12 OUT2
typ
max
Unit
V A V V mA mA mA V V V s s s s s V
Conditions
Io = 100A, Tj = 25C Vo = 500V Io = 0.4A, VIN (or VGL) = 10V Io = 2.0A, VIN (or VGL) = 10V Vcc = 10V, VM = VIN = 0V Vcc = 10V, VM = 400V, VIN = 0V Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V Vcc = 9 to 15V Vcc = 9 to 15V VM = 85V, Io = 0.41A Vcc = 10V VIN = 10V (Out Stage = ON) VIN = 0V (Out Stage = OFF) t d = H/S t d (off) - L/S t d (on) or L/S t d (off) - H/S t d (on) Ta = 40 to +105C
IGBT Q'1 GL1
LO1 VIN1
MIC
LO2
HV VIN2 L GND
IGBT Q'2 GL2
14
10
11
13
CPU
Timing Chart
A Drive Example
Ignition
VCC IN1 IN2 LO1 LO2 OSC250Hz
Operating voltage
Vcc

Parameter
Dead time
HVGND
0V 85V 400V
Symbol
td
Ratings min
5.0
typ
max
Unit
s
Conditions
Ta = 40 to +105C
OUT1GND 0V 400V 0V OUT2GND 400V
85V
85V
* About delay time

VIN1 0V

VIN1 0V
10%
10%
10%
10%
0V Vout1 td(on) 10% td(off) 10%
0V Vout2
10%
10%
Measurement Circuit
RL VIN1 VOUT1 VIN2 VOUT2 VIN2

VIN1
72
3.5

4.0

3.5
3.0 2.5
VIN=0V
150C 105C
3.5 3.0 2.5 2.0
VIN=0V VCC=10V
150C 105C
VCC=VIN1(2)=10V
3.0 2.5 2.0 1.5 1.0 0.5 0
150C 105C
25C
2.0 1.5 1.0 0.5 0 0 5 10 15 20

40C
25C
25C 40C
1.5 1.0 0.5 0 0 100 200 300 400 500

High voltage VM (V)
40C
100
200
300
400
500
High voltage VM (V)

5

3.5
Ta=25C

3.5
VIN=0V VM=400V
150C 125C
3.0 2.5
VCC= 15V
Ta=25C
3.0 2.5 2.0 1.5 1.0 0.5 0
VCC= 15V
25C
12V
2.0 1.5 1.0 0.5 0

10V 9V
12V 10V 9V 6V 4.5V
40C
6V 4.5V
0 0 5 10 15 20
100
200
300
400
500
100
200
300
400
500
High voltage VM (V)
High voltage VM (V)

2.0
VOUT (ON) (V)

10
150C 105C 25C 40C VCC=15V
Input threshold voltage VIH (V)
Gate drive voltage

14
Ta=25C VCC=15V
VCC=VIN=10V
12
1.5
10 8 6 4 2
VCC=9V
6
VCC=9V
1.0
0.5 0 1 2 3
I OUT (A)
0 50
0 0 50 100 150 200 0 5 10 15

Output current

2.0
Output on-state voltage VOUT (ON) (V)

8 7 6 5 4 3 2 1
VCC=9V VCC=15V
Gate drive voltage

14 12
VCC=VIN=10V
Input threshold voltage VIL (V)
1.8 1.6 1.4 1.2 1.0

I O=0.4A I O=2A
VCC=15V
10 8 6 4 2 0 50
VCC=9V
0.8 0.6 50
50
100
150
0 50
50
100
150
200
50
100
150
73
3.0 2.5
turn-on, off (s)

3.5 3.0
turn-on, off (s)

2.0
2.0 1.5 1.0
turn-on, off (s)
t d (off)
2.5 2.0 1.5 1.0
1.5
t d (off) t d (off)
1.0
t d (on)
t d (on)
t d (on)
0.5
0.5 0 7 9 11 13 15
0.5 0 50 0 0 50 100 150 7 9 11 13 15


2.5

100
IGBT ASO characteristics

100
2.0
t d (off)
turn-on, off (s)
Collector current (A)
10
10
1.5
100 s
1.0
t d (on)
1
1ms Ta = 25C Single pulse 10ms
0.1
0.5
0 50
50
100
150
0.01 0.001
0.01
0.1
10
100
0.1 10
100
Collector-emitter voltage (V)
1000
Power time (s)

5
without heatsink
PD (W) Power derating
0 50
50
100
150
74
75
Custom ICs
Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration.
Features
All semiconductor chips used are manufactured by Sanken. Main product lineup consists of power ICs produced out of many years' experience of Sanken. Uses monolithic chips with flip-chip construction. Mainly available in miniature transfer-mold packages.
Examples of Sanken Automotive Hybrid ICs
Lead frame type multi-chip power IC
One-chip power IC
Examples of Custom Hybrid IC Products

Regulators for alternators Igniters Power supply for microcomputer system Power steering control IC Motor and actuator driver Others
Lead frame type power hybrid IC with ceramic substrate
High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device)
Surface-mount power IC
76
Custom ICs

MT-100
15.6 5.0
FM205
10.0 4.2
STA 8pin
20.2 4.0
STA 10pin
25.25 4.0
19.9
16.9
9.0
SMA12pin
31.0 4.0
SMA15pin
31.0 4.0
SLA12pin
31.0 4.8
9.0
SLA15pin
31.0 4.8
10.2
10.2
16.0
SLA18pin
31.0 4.8
3GR-F
15.6 5.5
3GR-M
19.8
STR-S
5.5
24.2 5.5
16.0
23
23
16
SPM
SMD16pin
SPF16pin
12.05
35
4.8
16 15 14 13 12 11 10 9
16
9.8
6.8
23
16.1
Pin 1
20.0
8
1 2 3 4 5 6 7 8
4.0
SPF20pin
14.740.2 13.040.2 20 11 1.0 0.05
Fin thickness
+0.1
SPF24pin
17.28
24 13
10.50.3
7.5
0.2
1 1.270.25 0.4 0.05

+0.15
10
1 12
2.50.2
20.2
0.25 0.05
+0.15
2.5
10.6
7.5
2.5
10.5
7.5
77
78
2 Discretes
2-1. Transistors
2-1-1. Transistors
......................................... ......
2-2. MOS FETs

80 80 81
2-2-1. MOS FETs
......................................... ...
108 108
2SA1488/1488A (60V/4A, 80V/4A) 2SA1567 (50V/12A) 2SA1568 (60V/ 2SA1908 (120V/8A)
2SK3710 (60V/70A/6m, Surface-mount)
....................................
2SK3711 (60V/70A/6m) .............................. 109 2SK3724 (60V/80A/5m, Surface-mount) ... 110 2SK3800 (40V/70A/6m, Surface-mount) .. 111 2SK3801 (40V/70A/6m) .............................. 112 2SK3803 (40V/85A/3m, Surface-mount) ... 113 2SK3851 (60V/85A/4.7m)
.......................... ...
12A) .................................... 82
..................................... ...................................
83 84
2SB1622 (200V/15A) 2SC4024 (50V/10A) 2SC4065 (60V/12A) 2SC4153 (120V/7A)
2SC3852 (60V/3A) ........................................... 85

........................................ ...................................... ........................................ .................................. ....................................
86 87 88 89 90 91 92 93
114 115 116 117
FKV460S (40V/60A/9m, Surface-mount) FKV660S (60V/60A/14m, Surface-mount) 2-2-2. MOS FET Arrays
2SD2141 (38050V/6A) 2SD2382 (605V/6A) 2SD2633 (150V/8A) FP812 (100V/8A)
...........................
SDK06 (525V/3A/0.25, Surface-mount 4-circuits) 117 SDK08 (50V/4.5A/0.08, Surface-mount 4-circuits) SLA5027 (60V/12A/0.08, 4-circuits) SMA5113 (450V/7A/1.1, 4-circuits)
..........
........................................
118
........................................... .................................
SDK09 (12V/6A/0.2, Surface-mount 4-circuits) 119

120
MN611S (11510V/6A)
MN638S (38050V/6A) ................................... 94 SSD103 (655V/6A, Surface-mount) 2-1-2. Transistor Arrays

...........
SLA5098 (40V/20A/0.017, 6-circuits) ....... 121

..........
95 96 96
122
............................
STA508A (120V/6A/0.2, 4-circuits) ........... 123 STA509A (525V/3A/0.25, 4-circuits)

.......
SDA03 (60V/6A, Surface-mount 4-circuits) SDC09 (655V/6A, Surface-mount 2-circuits) SLA8004 (60V/12A, 55V/12A, H-bridge) STA315A (355V/2A, 3-circuits) STA335A (355V/3A, 2-circuits) STA415A (355V/2A, 4-circuits) STA461C (655V/6A, 2-circuits) STA464C (655V/6A, 4-circuits)
.........
124
SDA04 (60V/6A, Surface-mount 2-circuits) 97

98 99
2-3 Thyristors
2-3-1. Reverse Conducting Thyristors .. 125 TFC561D (600V, 430A, 1200A/s) TFC562D (600V, 600A, 1600A/s)
.............. ..............
SPF0001 (11510V/6A, Surface-mount 2-circuits) 100

.................. .................. ..................
125 126
101 102 103
2-4. Diodes
2-4-1. Alternator Diodes
.......................... ..
STA460C (6010V/6A, 2-circuits) .............. 104

................
127 128 129 130
105
2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes 2-4-4. General-purpose Diodes
STA463C (11510V/6A, 2-circuits) ............ 106

..................
................... ..........
107
79
Power Transistor 2SA1488/1488A
Absolute Maximum Ratings (Ta=25C)

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SA1488 2SA1488A 80 60 60 80 6 4 1 25 (Tc = 25C) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions
Typical Switching Characteristics (common emitter)

VCC (V) 12 RL () 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 200 t on t stg tf IB2 (mA) (s) (s) (s) 200 0.25typ 0.75typ 0.25typ
(13.5)
VCB = VEB = 6V IC = 25mA VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IE = 0.2A VCB = 10V, f = 1MHz
(Ta = 25C) Ratings Unit 2SA1488 2SA1488A A 100max 100max 60 80 V A 100max 60min 80min V 40min V 0.5max 15typ MHz 90typ pF
External Dimensions TO220F (full-mold)

4.2 2.8
10.0
3.3 4
C0.5
8.4
a b
16.9
1.35 1.35 0.85 2.54 2.2 2.54
3.9
0.8
2.6
0.45
B C E
a) Part No. b) Lot No. (Unit: mm)
IC VCE Characteristics (typ.)

4
VCE (sat)IB Characteristics (typ.)

1.5
IC VBE Temperature Characteristics (typ.)

4 ( VC E = 4 V)
8
3
0m
60mA
50mA
40mA
3
VCE (sat) (V)
IC (A)
30mA
1.0
IC (A)
re)
atu
per
tu re
20mA
tem
p e ra
125
1A 0 0 1 2 3 4 5 6 0 0.01 0.05 0.1 0.5 1 0 0
0.5
3 0 C
2 5 C
IB = 5mA
2A
(C a s
1.0
(C a s
IC = 3A
(Ca
10mA
se
0.5
e te m
e te m
p e ra
tu re
1.5
VCE (V)
IB (A)
VBE (V)
hFE IC Characteristics (typ.)

500 (VC E = 4V)
hFE IC Temperature Characteristics (typ.)

200 125C (VC E = 4 V )
j-a t
Characteristics
Typ
hFE
100
hFE
30C 50
50 20 0.01 20 0.02
j-a
(C/W)
1 1 4 0.7 1
100
25C
0.1
0.5
0.1
10
100
1000
IC (A)
IC (A)
t (ms)
f T IE Characteristics (typ.)
60 50 40 (VCE = 12V)
Safe Operating Area (single pulse)

10 5
PC Ta Derating
30
natural air cooling Silicone grease Aluminum heatsink Unit: mm
100ms
10
DC
1m
s
20
fT (MHz)
Typ
PC (W)
IC (A)
1 0.5
Without heatsink natural air cooling
ith
30 20 10 0 0.005 0.01
in
15
10
fin
ite
15
he
100
at
si
nk
0.1 0.05 0.05 0.1 0.5 1 3 3 5 10 50 100 2 0 0
10 0 50 2 50 2
Without heatsink
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
80
Power Transistor 2SA1567
Absolute Maximum Ratings (Ta = 25C)

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 50 50 6 12 3 35 (Tc = 25C) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 50V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 100max 50min 50min 0.35max 40typ 330typ
(Ta=25C) Unit A A V V MHz pF

4.2 2.8
10.0
3.3 4
C0.5
8.4
a b
16.9
VCC (V) 24
RL () 4
IC (A) 6
VBB1 (V) 10
VBB2 (V) 5
IB1 (mA) 120
IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ
(13.5)

2.54 2.2
1.35 1.35 0.85 2.54
3.9
0.8
2.6
0.45
B C E

I 20B = 0m A
12 10 8 6 4 2 0 0 1 2 3 4 5 6
15 0mA
VCE (sat)IB Characteristics (typ.)

1.5

12 10 ( VC E = 4 V)
100mA
1.0
VCE (sat) (V)
IC (A)
60mA
40mA
IC (A)
6 4
5C tem (Ca se
20mA
0.5 6A 3A 1A 0 2
IC = 12A 9A
10mA
5mA
2 0 0
C (C a
10
100
1000 3000
0.2
0.4
0.6
0.8
30
25
12
ure ) se t emp era C (C ture ase ) te m p e ra tu re )
pe
rat
1.0
1.2
VCE (V)
IB (mA)
VBE (V)

500
Typ

(VC E = 1V) 500 (VC E = 1V ) 125C 25C
j-a t
Characteristics
(C/W)
j-a
30C
hFE
hFE
100 50 30 0.02 0.1 1 10
100 50 30 0.02 0.1 1 10
0.5 0.3 1 10 100 1000
IC (A)
IC (A)
t (ms)
50 (VCE = 12V)

30
PC Ta Derating
35 30
1m
40
Typ
10 5
10 m s
s 0m
10
DC
fT (MHz)
ith
PC (W)
IC (A)
20
150
in fin
30
1 0.5
ite he at
20 0.1 0 0.05 0.1 1 12 0.05 3
10
100
10
1 50 0 2 2
si nk
50 50 2 2 0 0
Without heatsink
10
50
100
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
81

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 12 3 35 (Tc=25C) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 0.3A IECO = 10A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 60max 60min 50min 0.35max 2.5max 40typ 330typ
(Ta=25C) Unit A mA V V V MHz pF

10.0 4.2 2.8
3.3 4
C0.5
8.4
a b
16.9

VCC (V) 24 RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 120 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ
2.54 2.2
1.35 1.35 0.85 2.54
3.9
0.8
2.6
(13.5)
0.45
B C E
a) Part No. b) Lot No. (Unit : mm)

12
I 20 B = 0m A
150
mA
VCE (sat) IB Characteristics (typ.)

1.4

12 10 ( VC E = 1 V)
10 8
100mA
1.0
60mA
6 4 2 0
40mA
VCE (sat) (V)
IC (A)
IC (A)
IC = 12A 9A 6A 0.5 1A 3A
ure
pe
atu
tem
C (C ase
(Ca
20mA
10mA
0 7 10
2 0
12
25
100
1000 3000
0.2
0.4
0.6
0.8
30
C (C a
5C
s e te m
se
tem
1.0
p e ra
per
tu re
rat
re)
1.2
VCE (V)
IB (mA)
VBE (V)

300 100
(VC E = 1V)

300 125C 100 25C 30C (VC E = 1V )
j-a t
Characteristics
Typ
hFE
hFE
(C/W)
10
j-a
1 0.5
10
2 0.02
0.1
IC (A)
10 12
2 0.02
0.1
IC (A)
10 12
0.3
10
100
1000
t (ms)
50 (VCE = 12V)

30
PC Ta Derating
35 30
1m
40
Typ
10 5
m 10 s
s
10
DC
0m
fT (MHz)
ith
PC (W)
IC (A)
20
in fin
30
1 0.5
ite he
150
10 50 50 2
at si
15
nk
20 0.1 0 0.05 0.1 1 10 0.05 3
2
02
100
10
10
50
100
2 0
Without heatsink
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
82

Symbol ICBO IEBO V(BR) CEO hFE * VCE (sat) fT COB Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 10max 10max 120min 50min 0.5max 20typ 300typ
* Rank: O (50 to 100), P (70 to 140), Y(90 to 180)

16.2
1.75 2.15 1.05 5.450.1 1.5 4.4

+0.2 0.1
3.3
0.8

3.0 5.450.1 1.5 0.65 3.35 0.1

+0.2
V MHz pF
23.0 0.3
9.50.2
3.30.2 1.6
a b
5.5
(Ta=25C) Unit A A V
External Dimensions FM100 (T03PF)

0.8 0.2 15.6 0.2 5.50.2 3.450.2

8
A 50 3

3
A

8 ( VC E = 4 V)
0m
m 50
A
100m
75mA
IC (A)
re)
re)
atu
tem
se t em
25mA
2
125
25
0.2
0.4
4A 2A 0.6 0.8
1.0
0.5
30
IB=10mA
IC = 8A
C (C as
(Ca
se
C (C a
1.0
e te m
p e ra
per
per
atu
tu re
50mA
VCE (sat) (V)
2
)
IC (A)
1.5
VCE (V)
IB (mA)
VBE (V)

200

(VC E = 4V) 300 125C 25C (VC E = 4V )
j-a t
Characteristics
Typ
100
hFE
(C/W )
j -a
hFE
100
30C
1 0.5
50 30 0.02
50 30 0.02 0.2 0.1 0.5 1 5 8 1 10 100 1000 2000
0.1
0.5 1
5 8
IC (A)
IC (A)
t (ms)
30 (VCE = 12V)

20 10
10
DC
PC Ta Derating
80
Typ
20
10
0m
60
W it h
fT (MHz)
in
PC (W)
IC (A)
fi ni te
40
he at
1 0.5
Wit h ou t h e a t sin k n a t u ra l a ir c oolin g
si nk
10
20
0 0.02
0.05 0.1
0.5
5 8
0.1 5
10
50
100 150
3.5 0
Wit h ou t h e a t sin k
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
83
Power Transistor 2SB1622

Symbol Test Conditions min Ratings typ max 100 100
(Ta=25C) Unit
External Dimensions
3.3 0.2 0.8 5.5 0.2 5.5 0.2 3.45 0.2 9.5 0.2
ICBO IEBO VCEO hFE* VCE(sat) VBE(sat) fT COB
A VCB = 200V VEB = 5V A IC = 30mA 200 V VCE = 4V, IC = 10A 5000 30000 IC = 10A, IB = 10mA 2.5 V IC = 10A, IB = 10mA 3.0 V VCE = 12V, IE = 2A 60 MHz VCB = 10V, f = 1MHz pF 270 Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) *
1.75 0.15 2.150.15 1.05 0.1 5.450.1

+0.2
1.6 3.3
a b
23.0 0.3
16.2
0.8
5.45 0.1 15.60.2 1.5 4.4 1.5
0.65 0.1
+0.2
3.350.2
Typical Switching Characteristics


B C E
(Unit : mm)

m A

3
VCE (sat) IB Temperature Characteristics (typ.)

3
15
50mA 15mA 5.0mA
1.5mA 1.0mA
VCE (sat) ( V )
VCE (sat) ( V )
10
0.8mA 0.5mA IB = 0.3mA
IC = 15A IC = 10A IC = 5A
125C 75C 25C 30C

2
IC = 5A
IC (A)
.0
0 0.2
10
100 200
0 0.1
10
100 200
VCE ( V )
IB (mA)
IB (mA)
(VCE = 4V)

3 IC = 10A

15

100000 50000 typ VCE = 4V
VCE (sat) ( V )
hFE
10
IC (A)
125C 75C 25C 30C
Ta=150C 125C 100C 75C
10000 5000
50C 25C 0C 30C 55C
1000 0.2
0.5
10
3.0
20
0 0.2
0 1 10 100 200 1 2 3
IC (A) VBE (V)
IB (mA)

100000 50000
150C 125C 100C 75C
ton tstg t f IC Characteristics (typ.)

10
j-a t
Characteristics
VCE = 4V
3.0 Ta = 25C VCC = 40V IB1 = IB2 = 10mA
ton tstg tf (sec)
(C/W)
j-a
1.0 0.5
hFE
tstg
1 0.5
10000 5000
50C 25C 0C 30C 55C
tf ton
1000 0.2
0.5
10
20
0.1 0.2
0.1 0.5 1 5 10 20 1 10 100 1000 2000
IC (A)
IC (A)
t (sec)
Ta = 25C (single pulse)
80
Safe Operating Area

50 30 10 5
D.
PC Ta Derating
90 80
m 10
60
10
C.
70
ith W
0m
fT (MHz)
PC (W)
60 50 40 30 20 10 0
in fin ite
IC (A)
he
40
at si
1 0.5
nk
20 0.1 0.05 3
Without heatsink
0 0.02
0.1
0.5 1
5 10
10
100
500
25
50
75
100 125 150
84 70
IE (A)
VCE ( V )
Ta (C)
Power Transistor 2SC3852

Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = 0.2A VCB = 10V, f = 1MHz Ratings 10max 100max 60min 500min 0.5max 15typ 50typ

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9
3.9
0.8
2.6

VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 15 IB2 t on t stg tf (mA) (s) (s) (s) 30 0.8typ 3.0typ 1.2typ
2.54 2.2
1.35 1.35 0.85 2.54
(13.5)
0.45
B C E

3
IB =1 2 mA

1.5
8mA

3 ( VC E = 4 V)
5mA
VCE (sat) (V)
1.0
IC (A)
IC (A)
ure
tu re p e ra s e te m
3 0 C (C a s
rat
tem
2mA
1
0.5
3A
(Ca
125
0 0.001
0.005 0.01
0.05 0.1
0.5 1
0.5
25C
0.5mA
2A IC =1A
(C a
1mA
e te mp
se
e ra tu
pe
re )
3mA
1.0 1.1
VCE (V)
IB (A)
VBE (V)

2000 1000 (VCE=4V)

2000 (VC E = 4V )
j-a t
Characteristics
125C
500
500
30C
j-a
(C/W)
1 VCB = 10V IE = 2A 1000 0.5 1
Typ
1000
25C
hFE
hFE
100 0.01
0.1
0.5
100 0.01
0.1
0.5
10
100
IC (A)
IC (A)
t (ms)
30 (VCE = 12V)

10
1m
PC Ta Derating
30
20
fT (MHz)
PC (W)
IC (A)
Typ
DC
1 0.5
10 10 ms 0m s
20
W ith ite fin in a he in ts k
10
10
0.1 0 0.005 0.01 0.05 0.1 0.5 1 2 0.05 3 5 10 50 100 0 0
Without heatsink
50
100
150
IE (A)
VCE (V)
Ta (C)
85

Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 100V VEB = 15V IC = 25mA VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ

10.0 4.2 2.8
3.3 4
C0.5
8.4
a b
16.9
3.9
0.8
2.6

VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) 0.1 t on (s) 0.5typ t stg (s) 2.0typ tf (s) 0.5typ
2.54 2.2
1.35 1.35 0.85 2.54
(13.5)
0.45
B C E

10
IB = 35mA 30mA

1.5

10 ( VC E = 4 V)
25mA
IC (A)
20mA
VCE (sat) (V)
1.0
IC (A)
rat
re)
15mA
4
ure
6
pe
atu
0 0
0 0.002
0.01
0.1
0 0
30
IC = 1A
25
3A
12
5A
C (C a
C ( Ca
5C
5mA
(C
se
10A
s e te m
as
0.5
tem
p e ra
e t em
per
10mA
tu re
0.5
1.0
1.2
VCE (V)
IB (A)
VBE (V)

1000 (VC E = 4V)

1000
125C
j-a t
Characteristics
(VC E = 4V )
500
500
25C
hFE
hFE
30
(C/W)
j-a
Typ
0.5 100 0.02 0.1 0.5 1 5 10 100 0.02 0.1 0.5 1 5 10 0.3 1 10 100 1000
IC (A)
IC (A)
t (ms)
30 (VCE = 12V)

30
1m s
PC Ta Derating
40
Typ
10 20 5
DC
10
10
0m
30
fT (MHz)
PC (W)
IC (A)
ith
20
in fin ite he at
10
1 0.5
10
0 0.05 0.1
0.5
10
0.2 3
10
50
100
2 0
Without heatsink
15 0 2 1 50 50 2 00 10 0 2
25 50 75
150
si nk
100
125
150
IE (A)
VCE (V)
Ta (C)
86

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 12 3 35 (Tc=25C) 150 55 to +150
(Ta=25C) Unit V V V A A W C C
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ
(Ta=25C) Unit A mA V V V MHz pF

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9

VCC (V) 24 RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.12 IB2 t on t stg tf (A) (s) (s) (s) 0.12 0.6typ 1.4typ 0.4typ
2.54 2.2
1.35 1.35 0.85 2.54
3.9
0.8
2.6
(13.5)
0.45
B C E

12

1.3
100mA

12 10 ( VC E = 1 V)
10 8
20
0 15
0m
mA
60mA
1.0
VCE (sat) (V)
IC (A)
IC (A)
ure
atu
tem
per
12A
12
C (C ase
IC = 1A
0 0 2 4 6 0 0.005 0.01
0.1
3 0 C
3A
25
IB = 10mA
6A
9A
(C a s
5C
e te m
(Ca
se
tem
20mA
0.5
0.5
VCE (V)
IB (A)
VBE (V)

400 (VCE = 1V)

400 (VCE = 1V)
j-a t
Characteristics
Typ
100 100
125
50
hFE
hFE
50
(C/W)
C 25 C 0 3
1 0.5
10 5 3 0.02
10 5 3 0.02
j-a
0.1
10 12
0.1
10 12
0.2 1
10
100
p e ra
tu re
rat
re)
40mA
pe
1.0 1.1
1000
IC (A)
IC (A)
t (ms)
30 (VCE = 12V)

30
1m s
PC Ta Derating
40
Typ
20
10
10 5
10
m s
DC
0m
30
fT (MHz)
PC (W)
IC (A)
ith in
1 0.5
20
fin ite he at si
10
nk
10
0.1 0 0.05 0.1 0.5 1 5 10 12 0.05 3 5 10 50 100 2 0
150 15 0 2 1 50 50 2 00 10 02
Without heatsink
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
87

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 120 8 7 (pulse 14) 3 30 (Tc=25C) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VBE (sat) fT COB Test Conditions VCB = 200V VEB = 8V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ
(Ta=25C) Unit A A V V V MHz pF

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9
3.9
0.8
2.6

VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 t on t stg tf (A) (s) (s) (s) 0.6 0.5max 3max 0.5max
2.54 2.2
1.35 1.35 0.85 2.54
(13.5)
0.45
B C E

7

3

7 6 ( VC E = 4 V)
200
5 5
mA
15
0mA
100m A
VCE (sat) (V)
IC (A)
IC (A)
rat
re)
4 3 2 1
60mA 40mA
5 4
tem ure )
pe
atu
12
IC = 1A
0 0 1 2 3 4 0 0.005 0.01 0.1
3A
5A
1 2
0 0
0.5
3 0 C
25
(C a s
5C
IB =10mA
C (C a
(Ca
e te m pe
se t em
se
per
20mA
VCE (V)
IB (A)
VBE (V)

300 (VCE = 4V)

300 (VCE = 4V)
j-a t
Characteristics
125C
Typ
100 50 100 50
hFE
hFE
C 30
(C/W)
25C
1 0.5
20 0.01
0.1
0.5
5 7
20 0.01
j-a
0.1
0.5
5 7
0.2 1
10
100
ra tu
re )
1.0 1.1
1000
IC (A)
IC (A)
t (ms)
40 (VCE = 12V)

20 10 5
s 10m
PC Ta Derating
30
10
0 s
Typ
30
20
W ith
fT (MHz)
PC (W)
IC (A)
in fin
20
1 0.5
ite
15
he
10 10 0.1 0 0.01 0.1 1 5 0.05 5 10 50 100 200 2 0

15
at
si
50 50 2
100
2
2
nk
00
Without heatsink
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
88
Power Transistor 2SD2141

Symbol ICBO IEBO V(BR) CEO hFE VCE (sat ) Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA Ratings 10max 20max 330 to 430 1500min 1.5max
(Ta=25C) Unit A A V V

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9
1.35 1.35 0.85 2.54 2.2 2.54
3.9
0.8
2.6
(13.5)
0.45
B C E

10 150mA 120mA

3
20m A

10 ( VC E = 4 V)
A 90m 0mA 6
A 18m 4mA
VCE (sat) (V)
IC (A)
2mA
IC (A)
ure rat
mp
(C
as
se
tem
1A
5 C
12
C ( Ca
0.2 0.5
10
50 100 200
0 0
1.0
3 0 C
25
(C a s
e te m pe
te
pe
3A
er
5A
ra tu
IB = 1mA
at
re )
ur
IC = 7A
e)
2.0
2.4
VCE (V)
IB (mA)
VBE (V)

10000 5000 1000 500 100 50 10 0.02
(VCE = 2V)

10000 5000
12 5C
j-a t
Characteristics
(VCE = 2V)
Typ
hFE
hFE
1000 500 100 50
25
C
C
(C/W)
j-a
1 0.5
5 5
0.1
0.5
10
20 0.02
0.1
0.5 1.0
10
0.1
10
100
1000
IC (A)
IC (A)
t (ms)
40 (VCE = 12V)

20 10
PC Ta Derating
40
Typ
30
1ms
s 10m s 0m 10
DC
30
W
fT (MHz)
PC (W)
ith
IC (A)
in
20
0.5
20
fin ite he at si nk
0.1 10 0.05
10
150
50 50 2 100 2 0
Without heatsink
150
100
0 0.01
0.05 0.1
0.5 1
0.01 1
10
50 100
500
25
50
75
100
125
150
IE (A)
VCE (V)
Ta (C)
89

Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min
(Ta=25C) Unit A A V V V mJ

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9

VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 30 IB2 (mA) 30 t on (s) 0.25 t stg (s) 0.8 tf (s) 0.35
2.54 2.2
1.35 1.35 0.85 2.54
3.9
0.8
2.6
(13.5)
0.45
B C E

10 30mA 8 10mA 20mA

0.75 (IC = 1.5A)

6 5
IC (A)
IC (A)
6 5mA 4 3mA IB = 1mA
VCE (sat) (V)
0.5 Ta = 55C 25C 75C 125C
4 3 2 1 Ta=55C 25C 75C 125C
0.25
10
50 100
400
0.5
1.0
1.5
VCE (V)
IB (mA)
VBE (V)

5000 Typ 1000
(VCE = 1V)

5000 (VCE = 1V)
j-a t
Characteristics
1000
hFE
hFE
500
500
100 50 30 0.01
100 50 30 0.01
Ta = 55C 25C 75C 125C 0.05 0.1 0.5 1 5 10
(C/W)
j-a
1 0.5 0.3 1 5 10 50 100 500 1000
0.05 0.1
0.5
10
IC (A)
IC (A)
t (ms)
30 25 20 Typ (VCE = 1V)

20
c mse 0.5 ec 1ms c e
PC Ta Derating
30
10 5
10
10
ms
D.
fT (MHz)
(T
20
W
0m se
PC (W)
IC (A)
ith
15 10 5 0 0.01
25
in
1 0.5
10
15 0 100 150 1 00 2 2 50 5 02
Without heatsink
fin ite he at si nk
0.1 0.05 0.1 0.5 1 5 10
10
50
100
50
100
150
IE (A)
VCE (V)
Ta (C)
90

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 150 6 8 1 35 (Tc=25C) 2 (Ta=25C, No Fin) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max
(Ta=25C) Unit A mA V V V

10.0 4.2 2.8
3.3
C0.5
8.4 a b 16.9
(13.5)
1.35 1.35 0.85 2.54 2.2 2.54
3.9
0.8
2.6
0.45
B C E
91
Power Transistor FP812

Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A Ratings 10max 10max 120min 70min 0.3max

10.0 4.2 2.8
3.3
C0.5
8.4
a b
16.9
VCC (V) 12
RL () 4
IC (A) 3
VBB1 (V) 10
VBB2 (V) 5
IB1 (mA) 30
IB2 (mA) 30
t on (s) 2.5
t stg (s) 0.4
tf (s) 0.6
2.54 2.2
1.35 1.35 0.85 2.54
3.9
0.8
2.6
(13.5)
0.45
B C E

8
VCE (sat) I B Characteristics (typ.)

100mA

8 (VBE = 4V)
2 Ic = 3A
mA
00
0m
5 1
0m
75mA
VCE (sat) (A)
50mA
Ic = 5A
IC (A)
IC (A)
4 25mA 2
4 Tc = 40C 25C 75C 125C 0 0.5 1.0 1.5
IB = 10mA
Ic = 1A
0 5
10
50 100
500 1000 2000
VCE (V)
IB (mA)
VBE (V)

500 (VCE = 4V)

500 Tc = 125C (VCE = 4V)
j-a t
Characteristics
C )
50 10 5
NO = (Ta 25
(C/W)
Typ
hFE
hFE
75C 25C 100 55C 50
Fin
Tc = 25C
j-a
100 50 30 0.01
0.05 0.1 0.5 1 5 8
1 0.5 Single Pulese 0.1 0.05 0.0002 0.001
30 0.01
0.05 0.1
0.5
5 8
0.01
0.1
10
100
IC (A)
IC (A)
t (sec)
30 (VCE = 12V)

12 10
1m se c
PC Ta Derating
40
10
Typ 20
c se c m se 0m 10
D.
30
W ith
(T
fT (MHz)
IC (A)
C)
PC (W)
=2
in fin
1 0.5
20
20 0 20 0 2
ite he at si
10
nk
10
natural air cooling Without heatsink
100
10
02
Without heatsink
0 0.01
0.05 0.1
0.5
10
0.1 3
10
50
100 150
50
100
150
IE (A)
VCE (V)
Ta (C)
92
Power Transistor MN611S

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 50 (Tc=25C) 1.2 (Ta=25C, No Fin) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B Test Conditions VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA min Ratings typ max 10 10 125 1500 0.12 1.5
External Dimensions TO220S
10.20.3 (1.4)
4.440.2 1.30.2
105 400
115 800 0.08 1.25
10.0 0.5
+0.3
a
8.60.3
1.6
+0.2
b
(1.5) 0.1 0.1
45
3.0 0.5
+0.3
1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5

+0.2

VCC (V) 12 RL () 12 VBB1 (V) 10 VBB2 (V) 5 IC (A) 1 IB1 (mA) 30
0.40.1
tf IB2 ton tstg (mA) (s) (s) (s) 30 0.2typ 5.7typ 0.4typ

8 7 6 (Ta = 25C)
30mA 20mA

0.75 IC = 2A (Ta = 25C)
(Unit: mm)
VCE (sat) (V)
IC (A)
5 4 3
10mA 5mA 3mA
0.5
IC = 1.2A
0.25 IC = 0.5A 0
2 1 0 0 1 2 3 4 5 6
IB = 1mA
10
100
1000
VCE (V)
IB (mA)
VCE (sat) IB Temperature Characteristics (typ.) IC VBE Temperature Characteristics (typ.)

0.75 (IC = 1.2A) 7 6 (VCE = 1V)
IFEC VFEC Temperature Characteristics (typ.)

7 6
VCE (sat) (V)
0.5
0.25
Ta = 150C 125C 75C 25C 55C
4 3 2 1
IFEC (A)
IC (A)
Ta = 150C 125C 75C 25C 55C
5 4 3 2 1 0 Ta = 150C 125C 75C 25C 55C
0 0 10 100 1000
0 0 0.5 1.0 1.5
0.5
1.0
1.5
IB (mA)
VBE (V)
(Ta = 25C) (VCE = 1V)
VFEC (V)

5000

5000 (VCE = 1V)

10
1000
typ
ton tstg tf (sec)
tstg
Ta = 25C VCC = 12V IB1 = IB2 = 30mA
1000
hFE
hFE
100 30 0.01
100 30 0.01
Ta = 150C 125C 75C 25C 55C 0.1 1 10
tf
0.1 0
ton
1 2 3
0.1
10
Ic (A)
Ic (A)
Ic (A)
(C/W)
j-c j-a t
50
Characteristics (Single pulse)

(Tc = 25C)
Safe Operating Area (Single pulse)

20 10 (Ta = 25C)
PT Ta Derating
60 50 40
10
j-a FR4 (70 100 1.6mm) Use substrate
j-c j-a
j-c 1
PT =50s PT =500s PT =1ms PT =10ms
PC (W)
IC (A)
30 20
0.1 0.001
Without heatsink
0.01
0.1
10 0.1 1 10 100 200
10 0 0 25 50 75 100 125 150
t (s)
VCE (V)
Ta (C)
93
Power Transistor MN638S

Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA Ratings 10max 20max 330 to 430 1500min 1.5max
(1.4)
(Ta=25C) Unit A mA V V
10.20.3
4.440.2 1.30.2
a
10.0 0.5
+0.3
1.6 (1.5)
+0.2
8.60.3
b
0.10.1
3.0 0.5
+0.3
1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5

+0.2
0.40.1

10 150mA 120mA
VCE (sat) I B Characteristics (typ.)

3
20m A

10 (VBE =4V)
A 90m 0mA 6
A 18m 4mA
VCE (sat) (V)
IC (A)
2mA
IC (A)
ure rat
mp
(C
as
se
tem
1A
5 C
12
C ( Ca
0.2 0.5
10
50 100 200
0 0
1.0
3 0 C
25
(C a s
e te m pe
te
pe
3A
er
5A
ra tu
IB=1mA
at
re )
ur
IC = 7A
e)
2.0
2.4
VCE (V)
IB (mA)
VBE (V)

10000 5000 1000 500 100 50 10 0.02 (VCE = 2V)

Typ
10000 5000
12 5C
(VCE = 2V)
j-c j-a (C/W)
j-c
j-a t
Characteristics
100
hFE
hFE
1000 500 100 50
25
C
5C
10
j-a j-c
0.1
0.5
10
20 0.02
0.1
0.5 1.0
10
0.1 0.001
0.01
0.1
10
IC (A)
IC (A)
t (s)
94
Surface-mount Power Transistor SSD103

Symbol Ratings VCBO 655 655 VCEO VEBO 6 IC 6 IC (pulse) 10 (Pw 1mS, Duty 25%) 10 IB 1.5 *1 PC Tj 150 Tstg 55 to +150 Unit V V V
Symbol Test Conditions
(Ta=25C)
External Dimensions SOP8

0.70.2 5.4Max
8
a
min
Ratings typ
0.42 0.05
*1: FR4 70mm100mm 1.6mm
5.00.2
1.50.2
(drain heatsink copper foil area 2525mm)
a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm)

7 6 5
30mA 20mA 10mA
VCE (sat) I C Temperature Characteristics (typ.)

0.75
IC/IB = 100

6 5
(VCE = 1V)
VCE (sat) (V)
0.5
Ta = 55C 25C 75C 125C
IC (A)
5mA 3mA
IC (A)
4 3 2 1 0
3 2 1
Ta = 125C 75C 25C 55C
0.25
IB = 1mA
0 0.01
0 0.1 1 10 0 0.5 1.0 1.5
VCE (V)
IC (A)
VBE (V)

2000 1000 500
(VCE = 1V)

5
tstg
ton tstg tf (S)
1 0.5
VCC = 12V IB1 = IB2 = 30mA
hFE
100 50 0.01 0.1
Ta = 125C 75C 25C 55C
tf
0.1
ton
0 1 2 3
10
IC (A)
IC (A)
Safe Operating Area

20 10 5
(Single pulse)

0.5m s
5, 6, 7, 8
IC (A)
1 0.5
2, 3, 4
50 100
0.1 1 5 10
VCE (V)
0.50.2
A A W C C
ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b
VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH
80
V V mJ
1.270.25
c d
4.40.2
4.7Max
0 to 0.1
4
+0.15
0.17 0.05
+0.15
6.20.3
60 400
65 800 0.11 1.25
max 10 10 70 1500 0.15 1.5
Unit
A A V
0 to 10
5
1m s
s 10m
95
Surface-mount Power Transistor Array SDA03

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 60 60 6 6 (pulse 12) 1 3 (No Fin) 150 55 to +150 Unit V V V A A W C C
External Dimensions SMD-16A
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
a b
Pin 1 20.0max
0.2

0 to 0.15
+0.15 0.3 0.05
19.56
4.0max
1.40.2
3.60.2
IC VCE Characteristics
6 5 4
200mA 100mA 50mA 30mA
VCE (sat) IC Temperature Characteristics (typ.)

3
IC / IB = 20

6 5
(VCE = 4V)
VCE (sat) (V)
IC (A)
3 2 1 0
20mA
IC (A)
Ta = 150C 75C 25C 55C
4 3 2 1
Ta = 150C 75C 25C 55C
10mA IB = 5mA
0 0.05
0.1
10
0.5
1.0
1.5
VCE (V)
IC (A)
VBE (V)
hFE IC Temperature Characteristics

1000
VCE = 4V
ton tstg t f IC Characteristics

5
ton
j-a t
50
(Ta = 25C)
j-a (C/W)
500
ton tstg tf (sec)
1 0.5
hFE
VCC = 12V IB1 = IB2 = 50mA
10 5
tf
100 50 30 0.01 0.1
Ta = 150C 75C 25C 55C
0.1 0.05 0.5 0.1 0.5 1
tstg
5 10
1 0.3 0.001
10
0.01
0.1
IC (A)
IC (A)
t (s)

20 10
10 m
PT Ta Derating
4
1m s
3
s
Without heatsink
20
16
14
12
10
IC (A)
PT (W)
1 0.5
15
13
11
0.1 3
10
50
100
50
100
150
VCE (V)
Ta (C)
96
Surface-mount Power Transistor Array SDA04

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 60 60 6 6 (pulse 12) 1 2.5 (No Fin) 150 55 to +150 Unit V V V A A W C C
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
a b
Pin 1 20.0max
0.2

0 to 0.15
+0.15 0.3 0.05
19.56
4.0max
1.40.2
3.60.2
6 5 4
200mA 100mA 50mA 30mA

3
IC / IB = 20

6 5
(VCE = 4V)
VCE (sat) (V)
IC (A)
3 2 1 0
20mA
IC (A)
Ta = 150C 75C 25C 55C
4 3 2 1
Ta = 150C 75C 25C 55C
10mA IB = 5mA
0 0.05
0.1
10
0.5
1.0
1.5
VCE (V)
IC (A)
VBE (V)

1000
VCE = 4V

5
ton
j-a t

(Ta = 25C)
50
500
ton tstg tf (sec)
j-a (C/W)
1 0.5
hFE
VCC = 12V IB1 = IB2 = 50mA
10 5
tf
100 50 30 0.01 0.1
Ta = 150C 75C 25C 55C
0.1 0.05 0.5 0.1 0.5 1
tstg
5 10
1 0.3 0.001
10
0.01
0.1
IC (A)
IC (A)
t (s)

20 10
10 m
PT Ta Derating
4
1m s
3
s
Without heatsink
20
16
10
PT (W)
IC (A)
1 0.5
15
1
0.1 3
10
50
100
50
100
150
VCE (V)
Ta (C)
97
Surface-mount Power Transistor Array SDC09

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 655 655 6 6 (pulse 10 *) 1 2.8 150 55 to +150 Unit V V V A A W C C
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
a b
Pin 1 20.0max
0.2
0 to 0.15
+0.15 0.3 0.05
* PW 100s, Duty 1%
4.0max 3.60.2
19.56
1.40.2
8 7 6 5 IB = 30mA 20mA 10mA 5mA 3 2 1 0 0 1 2 3 1mA 3mA

0.7 IC /IB =100 0.6 0.5

6 5 4 Ta=150C 100C 75C 25C 55C (VCE = 4V)
VCE (sat) (V)
IC (A)
IC (A)
0.01 0.1
0.4 0.3 0.2 0.1 0 0.0001
Ta=150C 100C 75C 25C 55C
3 2 1 0
0.001
0.2
0.4
0.6
0.8
1.0
1.2
VCE (V)
IC (A)
VBE (V)

5000 VCE=1V

10
j-a t

(Use substrate 42311m)
10
ton tstg tf (sec)
tstg
1 VCC =12V IB1= IB2 =30mA
1000
hFE
ton tf
j-a (C/W)
100 50 0.01
Ta=150C 100C 75C 25C 55C 0.1 1 10
0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 0.05 0.1 1 10 100 1000
IC (A)
IC (A)
t (ms)

20 10 5 1ms 1 0.5 10ms 0.5 ms Ta=25C
PT Ta Derating
6 50 50 1.6mm Use substrate
4 13 15 16
9 10 12
PT (W)
42311.0mm Use substrate
IC (A)
14
11
1 0.1 0.05 0.5 1 5 10 50 100 0 50 0 50 100 150

2 7
VCE (V)
Ta (C)
98
Power Transistor Array SLA8004

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings NPN PNP 60 55 60 55 6 6 12 12 3 3 5 (Tc=25C, No Fin) 40 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC NPN
Test Conditions Ratings
(Ta=25C) PNP
Test Conditions Ratings
External Dimensions SLA 12pin (LF817)

310.2 24.40.2 16.40.2
Unit A mA V
3.20.15 9.90.2 3.20.15 3.8 4.80.2 1.70.1
VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max
VCB = 55V 100max VEB = 6V 60max IC = 25mA 55min VCE = 1V, I C = 3A 80min I C = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max
12.90.2
160.2
V V
50.5
a
1.20.15
2.450.2
(Root dimension)
4 (R1) R-end 0.85 0.1 1.450.15 (3)

+0.2
0.55 0.1 40.7
+0.2
11 P2.540.1= (27.94)
(Root dimension)
31.30.2

12
I 20 B = 0m A
m 150

(PNP) 12 (N PN )
1 2 3 4 5 6 7 8 9 10 11 12
0m
10 8
100mA
10 8
20
m 50
100mA
60mA
IC (A)
IC (A)
60mA
6 4 2 0
40mA
40mA
6 4 2 0
20mA IB = 10mA
20mA
10mA
VCE (V)
VCE (V)
(VC E = 1V) (PNP)

300 100

400
(VCE = 1V) (N PN )
Typ
100
Typ
hFE
10
hFE
2 0.02
50
10 5 3 0.02
0.1
IC (A)
10 12
0.1
10 12
IC (A)

300 125C 100 (VC E = 1V) (PNP) 25C 30C

400 (VCE = 1V) (N PN )
C 125
100 50
hFE
10
hFE
C 25 C 0 3
10 5 3 0.02
2 0.02
0.1
IC (A)
10 12
0.1
10 12
IC (A)

1.4 (PNP)

1.3 (N PN )
1.0 1.0 IC = 12A 9A 6A 0.5 1A

3A
6A
R2
VCE (sat) (V)
VCE (sat) (V)
5 R1: 500 Typ. R2: 500 Typ. 3 6 2 R1 1 11 7 10
3A
0.5
12A
12
9A
IC = 1A
0 7 10 100 1000 3000 0 5 10
100
1000
3000
IB (mA)
IB (mA)
99
Surface-mount Power Transistor Array SPF0001

Symbol VCBO VCEO VEBO IC IB PT * Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 2.5 (Ta = 25C) 150 55 to +150
(Ta=25C) Unit V V V A A W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A L = 10mH min Ratings typ max 10 10 125 1500 0.12 1.5
(Ta=25C) Unit
External Dimensions SPF 20pin

14.740.2
45
V V mJ
1 1.270.25 0.4 0.05

+0.15
10 2.50.2 0.250.05
+0.15
* Use glass epoxy substrate (FR4) 70mm 100mm1.6mm
(11.43)
10
(3.05)

1000 500
150C 25C

0.5
(4.7)
F1
F2
20.2
4-( 0.8)
7.50.2
20
(2.4) (13.54)
11
(VCE = 1V)
(IC = 1.2A)
hFE
100 50
VCE (sat) (V)
55C
0.25
150C 25C 55C
10 0.1
0.5
56
0 0.001
0.01
0.1
IC (A)
IB (A)
IC VEC Temperature Characteristics (typ.)

10

6 5 4
(VCE = 1V)
IC (A)
IC (A)
6
150C 25C 55C
3 2 1 0
150C 25C 55C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VEC (V)
VBE (V) thermal resistance characteristics Transient (82361mm at the time of mounting the
100
0. 1m s
recommended pattern of the glass epoxy board)

20 10
2 circuits operate
5m
1 circuits operate 2 circuits operate 1 circuits operate
10
j-a
(C/W)
F1
j-f
F2
IC (A)
j-a j-f
3
0.1
18,19
0.1 0.01 0.00001 0.0001 0.001
12,13
10
100
200
0.01
0.1
10
100
VCE (V)
Power time (s)
100
10.50.3
105 400
115 800 0.08 1.25
A A V
13.040.2 20 11
1.0 0.05 Fin thickness
+0.1
Power Transistor Array STA315A

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 365 6 2 (pulse 3*) 30 3 (Ta=25C) 13.5 (Tc=25C) 150 55 to +150 Unit V V V A mA W W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min
11.30.2
2.30.2
9.00.2
(Ta=25C) Unit A mA V
External Dimensions STA3 (LF400A)

20.20.2
b a
0.50.15
* PW 1ms, Duty 25%
L = 10mH, single pulse
C1.50.5

VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5
tf (s) 2.5
1 E
2 B
3 C
4 B
5 C
6 B
7 C
8 E

A
VCE (sat) IB Temperature Characteristics

0.5
8mA 5mA (IC = 0.5A)
VCE (sat) IC Temperature Characteristics

3
IC/IB = 100
30m
12
VCE (sat) (V)
IC (A)
3mA 2mA
VCE (sat) (V)
2
Ta = 125C 75C 25C 40C
0.25
IB = 1mA
Ta = 125C 75C 25C 40C
0 0 1 2 3 4 5 6 1 10 100 400
0.5
1.20.2
4.00.2
V V V k mJ
4.70.5
0.50.15 1.00.25
7 2.54=17.780.25
(2.54)
VCE (V)
IB (mA)
IC (A)

3000
(VCE = 4V)

50
j-a t
Characteristics
Single pulse
20
ton tstg tf (S)
hFE
500
Ta = 125C 75C 25C 40C
tf
1 0.5 0.1
(C/W)
j-a
1000
10
tstg
VCC = 12V IB = 5mA IB = 0A
10 5
ton
100 50 0.01 0.1
1 0 0.5 1.0 1.5 2.0 1 10 100 1000
0.5
IC (A)
Ic (A)
t (ms)

5 (per element)
PT Ta Derating
20
1m
10
s
3 5 7
PT (W)
IC (A)
1 0.5
10
ith
inf
ini
te
he
at
sin
2
k
RB RBE
1
Withou t heat
sink
0.1 1 5 10 50
50
100
150
VCE (V)
Ta (C)
101

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 355 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse Ratings 10max 10max 355 500min 0.5max 150min
11.30.2
2.30.2
9.00.2
(Ta=25C) Unit A A V V mJ
External Dimensions STA3 (LF400A)

20.20.2
b a
4.70.5
0.50.15

VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2
C1.50.5
1.00.25
72.54=17.780.25
(2.54)
0.50.15
2 C
3 B
4 E
5 E
6 B
7 C

A 10 m A

1
5mA 4mA 3mA (IC = 1A)

4
VCE = 4V
15m
8m
6m
VCE (sat) (V)
2mA IB =1mA
IC (A)
IC (A)
0.5
Ta = 125C 75C 25C 55C
Ta = 55C 25C 75C 125C
0 0.002
0.01
0.05 0.1
0.4
0.5
1.0
1.20.2
4.00.2
1.5
VCE (V)
IB (A)
VBE (V)

5000
(VCE = 4V)

20
j-a t
Characteristics
Single pulse
tstg
20
VCE = 12V IB1 = IB2 = 5mA
ton tstg tf (S)
10 5
10
hFE
1000 500
Ta = 125C 75C 25C 55C
(C/W)
tf ton
0.1 0.5 1 5
j-a
1 0.5
1 0.5
100 0.01
0.05 0.1
0.5
0.3 0.05
0.1 0.1
10
100
1000
5000
IC (A)
Ic (A)
t (ms)

10 5
10
PT Ta Derating
15
(per element)
1m
10
0m
s
W ith in fin ite
s
10
he
2
at si nk (A ll ci rc ui
DC
PT (W)
IC (A)
(T
ts
c=
op
25
er
5
Withou t heat sink (A
at
e)
0.5
ll circui
ts oper
ate)
4
150
0.2 2 5 10 50
50
100
VCE (V)
Ta (C)
102

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 355 365 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 55 to +150 25% Unit V V V A mA W W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min
0.2
0.2
9.0
0.2
(Ta=25C) Unit A mA V V V V k mJ
External Dimensions STA4 (LF412)

25.25
0.2
b a
11.3
3.5
0.5
2.3
1.0
0.25
0.5
0.15
(2.54) 0
0.3
0.3
9 2.54=22.86
0.05
0.15

VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5
1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

A

0.5
8mA 5mA (IC = 0.5A)
VCE (sat) IC Temperature Characteristics

3
IC /IB = 100
30m
12
VCE (sat) (V)
IC (A)
3mA 2mA
VCE (sat) (V)
2
Ta = 125C 75C 25C 40C
0.25
IB = 1mA
Ta = 125C 75C 25C 40C
0 0 1 2 3 4 5 6 1 10 100 400
0.5
0.5
1.2
4.0
L = 10mH, single pulse
C1.5
0.5
0.2
0.2
VCE (V)
IB (mA)
IC (A)

3000
(VCE = 4V)
tontstgtf IC Characteristics (typ.)

50
j-a t
Characteristics
Single pulse
20
ton tstg tf (S)
hFE
500
Ta = 125C 75C 25C 40C
tf
1 0.5 0.1
(C/W)
j-a
1000
10
tstg
VCC = 12V IB = 5mA IB = 0A
10 5
ton
100 50 0.01 0.1
1 0 0.5 1.0 1.5 2.0 1 10 100 1000
0.5
IC (A)
Ic (A)
t (ms)

5 (per element)
PT Ta Derating
20
1m
10
s
ith W
PT (W)
IC (A)
1 0.5
3
he at
in fin ite
10
2 1
RB RBE
si nk
10
With
out h
eatsin
0.1 1 5 10 50
50
100
150
VCE (V)
Ta (C)
103
Power Transistor Array STA460C

Symbol VCBO VCEO VEBO IC ICP Ratings 6010 6010 6 6 10 (Pw 1ms, Du 50%) 3.2 (Ta = 25C) 18 (Tc = 25C) 150 40 to +15 Unit V V V A A
(Ta=25C)

25.25
0.2
min
Ratings typ
PT Tj Tstg
W C C
ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b
VCB = 50V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse
200
V V mJ
3.5
0.5
50 700
60 1500 0.09 1.25
max 10 10 70 3000 0.15 1.5
Unit
A A V
0.2
0.2
11.3
9.0
0.2
b a
2.3
1.0
0.25
0.5
0.15
(2.54)
0 92.54 = 22.86
0.3
0.3
0.05
0.15
1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

10

5000
hFE IC Temperature Characteristics (typ.) VCE (sat) IC Temperature Characteristics (typ.)

5000 Ta = 125C 75C 25C 55C Ta = 55C 25C 75C 125C
(VCE = 1V)
typ
(VCE = 1V)
0.5
0.75
(IC /IB = 100)
9 7
0m
IB
=3
8 6 5 4 3 2 1 0 0
20
mA
IC (A)
10m
h FE
5mA
3mA
h FE
500
500
VCE (sat) (V)
1000
1000
0.5
0.25
1mA
100 50
100 50 0.05 0.1 0.5 1 5 10 30 0.01 0.05 0.1 0.5 1 5 10 0 0.01 0.05 0.1 0.5 1 5 10
30 0.01
VCE (V)
IC (A)
IC (A)
IC (A)

0.75

6 5
j-a PW
20 10 5
Characteristics
(VCE = 1V)
VCE (sat) (V)
j-a (C/W)
0.5
IC (A)
3 2
125 C
1 0.5
0.25 IC = 3A 0.5A 0 1 5 10 50 100 500 1.5A
1 0
75C 0
25C 55C
Ta =
0.1 1.0 1.5 0.05 0.1 0.5 1 5 10 50 100 500 1000 2000
0.5 VBE (V)
IB (mA)
PW (ms)

PT Ta Derating
20
Silicone grease used Vertical self-excitation
Safe Operating Area

20 10
15
5
ini te
PT (W)
IC (A)
10
1 0.5
5
Without heatsink
0.1 Without heatsink 0 55 0 50 100 150 0.05 0.5

Ta=25C
Single pulse
4
10 50 100
Ta (C)
VCE (V)
104
1.2
4.0
C1.5
0.5
0.2
0.2
ms 0.5
1m s
10m
ith W inf he at sin k

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 3.2 (Ta = 25C) 18 (Tc = 25C) 150 55 to +150 Unit V V V A A W W C C
0.2
0.2
9.0
0.2
External Dimensions STA4 (LF400B)

25.25
0.2
b a
11.3
4.7
0.5
2.3
1.0
0.25
0.5
0.15
(2.54)

VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 30 IB2 (mA) 30 ton (s) 0.2 t stg (s) 3.9 tf (s) 0.2
C1.5
0.5
9 2.54=22.86
0.05
0.15
0.2
1 2 3 4 B C E
7 8 9 10 B C E

7 6 5
30mA 20mA 10mA

0.75
IC / IB = 100

6 5
(VCE = 1V)
VCE (sat) (V)
0.5
Ta = 55C 25C 75C 125C
IC (A)
5mA 3mA
IC (A)
4 3 2 1 0
3 2 1
Ta = 125C 75C 25C 55C
0.25
IB = 1mA
0 0.01
0 0.1 1 10 0 0.5 1.0 1.5
VCE (V)
IC (A)
VBE (V)

2000 1000 500
(VCE = 1V)

5
j-a t
Characteristics
Single pulse
10
tstg
tontstgtf (S)
1 0.5
VCC = 12V IB1 = IB2 = 30mA
(C/W)
1 0.5
hFE
100 50 0.01 0.1
Ta = 125C 75C 25C 55C
tf
0.1
j-a
ton
0 1 2 3
0.1 0.05 0.1 1 10 100 2000
10
IC (A)
Ic (A)
t (ms)

20
PT Ta Derating
20
10 5
15
PT (W)
IC (A)
10
1 0.5
2
5
Withou t heat sink
4
100 150
0.1 1 5 10 50 100
50
VCE (V)
Ta (C)
0.5
1.2
4.0
0.2
0.5m s
1m s
10m s
ith W ite fin in nk si at he
105

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 3.2 (Ta=250C) 18 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C
0.2
0.2
9.0
0.2
External Dimensions STA4 (LF400B)

25.25
0.2
b a
11.3
4.7
0.5
2.3
1.0
0.25
0.5
0.15
(2.54)

C1.5
0.5
9 2.54=22.86
0.05
0.15
0.2
1 2 3 4 B C E
7 8 9 10 B C E

8 7 6 5
30mA

0.75
I C /IB = 100

7 6
(VCE = 1V)
VCE (sat) (V)
20mA 10mA 5mA 3mA
5 0.5
Ta = 55C 25C 75C 150C
IC (A)
4 3 2 1 0 0 1 2 3 4
IC (A)
4 3 2 1
Ta = 150C 75C 25C 55C
0.25
IB = 1mA
0 0.01
0 0.1 1 5 0 0.5 1.0 1.5
VCE (V)
IC (A)
VBE (V)

2000 1000
(VCE = 4V)

10 5
j-a t
Characteristics
Single pulse Dual transistor operated
tontstgtf (S)
tstg
100 50
0.5
1.2
500
Ta = 150C 75C 25C 55C
(C/W)
hFE
1 0.5
10 5 1 0.5 0.1 0.0001 0.001
Single transistor operated
100 50 30 0.01
tf
0.1
ton
0 1
VCC = 12V IB1 = IB2 = 30mA
j-a
0.1
10
0.01
0.1
10
100
4.0
0.2
1000
IC (A)
Ic (A)
t (s)

0.75
IC = 1.2A
PT Ta Derating
20 (Tc = 25C)
VCE (sat) (V)
15 0.5
3
nk si at he
ith W ite fin in
0.25
Ta = 150C 75C 25C 55C
PT (W)
10
2
5
Withou t heat sink
4
100 150
10
100
1000
50
IB (mA)
Ta (C)
106

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 20 (Tc=25C) 4 (Ta=25C) 150 55 to +150 Unit V V V A A W C C
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB=60V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.5A, IB=15mA IFEC=6A L=10mH min Ratings typ max 10 10 70 1500 0.15 1.5
(Ta=25C) Unit
External Dimensions STA4

25.25
0.2
80
V V mJ
3.5
0.5
60 400
65 800 0.09 1.25
11.3
A A V
0.2
0.2
9.0
0.2
b a
2.3
1.0
0.25
0.5
0.15
(2.54)
9 2.54= (22.86) (Root dimension) C1.5

0.5
0.05
0.15
0.2
1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

7 6 5
30mA 20mA 10mA

0.75
I C /IB = 100

6 5
(VCE = 1V)
VCE (sat) (V)
0.5
Ta= 55C 25C 75C 125C
IC (A)
5mA 3mA
IC (A)
4 3 2 1 0
3 2 1
Ta = 125C 75C 25C 55C
0.25
IB = 1mA
0 0.01
0 0.1 1 10 0 0.5 1.0 1.5
VCE (V)
IC (A)
VBE (V)

2000 1000 500
(VCE = 1V)

5
tstg
tontstgtf (S)
1 0.5
VCC = 12V IB1 = IB2 = 30mA
hFE
100 50 0.01 0.1
Ta = 125C 75C 25C 55C
tf
0.1
ton
0 1 2 3
10
IC (A)
Ic (A)

20
PT Ta Derating
20
10 5
15
PT (W)
3
k sin
0.5
IC (A)
10
1 0.5
2 4 1 6 8 10
Witho
ut he
atsin
0.1 1 5 10 50 100
50
100
150
VCE (V)
Ta (C)
1.2
4.0
0.2
0.5m s
W
s 1m s 10m
ith fin in ite he at
107
MOS FET 2SK3710 (under development)
Features
ON resistance 0.0060 max. Built-in G-S bidirectional Zener diode Trench MOS structure
Applications
Power steering motor Various motors Replaces mechanical relays
External Dimensions
(1.4) (5)
TO220S
4.440.2
1.30.2
(0.45)
10.5 0.5
9.10.3
+0.3
2.60.2 0.1 0.1 3 0.5

+0.3 +0.2

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 70 140 130 400 150 55 to +150 Unit V V A A W mJ C C
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz min 60 10 100 4 6.0 1.5 Ratings typ max
(Ta=25C) Unit V A A V m V ns pF pF pF
1.20.2 (1.5)
+0.2 0.86 0.1
2.540.1
2.540.1
0.4
0.1
(1.3)
10.2 0.3
(5.4)
5.0 0.9 110 9400 1400 1100
Details of the back (S=2/1)
(Unit: mm)
108
1.40.2
MOS FET 2SK3711
Features
Applications
External Dimensions
1.8 5.00.2 15.60.4 13.6 9.6
TO-3P
4.80.2 2.00.1
19.90.3 4.0
2.0
a b
3.20.1

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 70 140 Unit V V A A W mJ C C
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions
(Ta=25C)
20.0 min 4.0 max
min 60
Ratings typ
max
10 100 4 6.0 1.2
Unit
2 3
1.05 0.1
+0.2 +0.2
130 To be defined 150 55 to +150
ID = 100A VGS = +20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz
2 5.0 0.9 70 7800 1250 990
* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

RG = 50 * Contact your sales rep for the details of warranty at Tch = 175C
V A A V m V ns pF pF pF
0.65 0.1
5.450.1
15.80.2
5.450.1
1. Gate 2. Drain 3. Source
1.4
(1)
(2)
(3)
ID VDS Characteristics (typ.)

80 70 60
ID VGS Characteristics (typ.)

80 70 60
VDS VGS Characteristics (typ.)

1.0
Re (yfs) ID Characteristics (typ.)

500 Tc = 55C 25C 150C
(Ta = 25C)
(VDS = 10V)
(VDS = 10V)
0.8 100 Tc = 150C 100C 50C 25C 0C 40C 0 2 4 6 8 0.6 0.4 0.2
40 30 20 10 0 0
40 30 20 10
VGS = 5V
VDS (V)
ID (A)
ID (A)
50
10V 8V 6V
50
Re (yfs) (S)
20
ID = 70A 35A
10
0.5
1 0 5 10 15 1 10 70
VDS (V)
VGS (V)
VGS (V)
ID (A)
RDS (ON) I D Characteristics (typ.) Ta = 25C

7.0 6.0
RDS (ON) TC Characteristics (typ.) ID = 35A

12.0
j-c Pw
10
Characteristics
VGS = 10V
VGS = 10V
RDS (ON) (m)
RDS (ON) (m)
10.0
5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70
j-c (C/W)
8.0 6.0 4.0 2.0 0 60 50 0 50 100 150
0.1
0.01 0.0001 0.001
0.01
0.1
10
100
ID (A)
Tc (C)
Pw (sec)
Capacitance VDS Characteristics IDR VSD Characteristics

50000
Safe Operating Area (single pulse) PD TC Characteristics

500
ID (pulse) max
(Ta = 25C)
VGS = 0V f = 1MHz
70 60 50
(Ta = 25C)
(Ta = 25C)
50 0 s( 1s
s( 1s
140 120
(With infinite heatsink)
Capacitance (pF)
100
(O N)
10000
Ciss
M LI
IT
ED
ho
t)
100
40 30 20 10
1000
Coss Crss
Tc = 150C 25C 55C
10
RD
PD (W)
1m
IDR (A)
IC (A)
80 60 40 20
ho t)
(1s
10 ms
ho t)
100
0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1 0.1
0 1 10 100 0 50 100 150
VDS (V)
VSD (V)
VDS (V)
Tc (C)
109
Features
Applications
External Dimensions
(1.4) (5)
TO220S
4.440.2
1.30.2
(0.45)
10.5 0.5
9.10.3
+0.3
2.60.2 0.1 0.1 3 0.5

+0.3 +0.2

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch * Tstg Ratings 60 20 80 160 Unit V V A A W mJ C C
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions
(Ta=25C)
1.20.2 (1.5)
+0.2 0.86 0.1
min 60
Ratings typ
max
10 100 2 5.0 1.5
Unit
2.540.1
2.540.1
0.4
0.1
60 To be defined 150 55 to +150
ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 40A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz
* Contact your sales rep for the details of warranty at Tch = 175C
4.0 0.9 To be defined 10600 1600 1300
(Unit: mm)
110
1.40.2
V A A V m V ns pF pF pF
(1.3)
10.20.3
(5.4)
MOS FET 2SK3800

Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 40 20 70 140 Unit V V A A W mJ C C
(Ta=25C)

4.440.2
min 40
Ratings typ
max 10 100 4.0 6.0
Unit
80 (Tc=25C) 400 150 40 to +150
* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

RG = 50
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)
VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s
(1.5)
ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A
+0.2 0.86 0.1
2.540.1
2.540.1
0.4
0.1
(1.3)
10.20.3
(5.4)
1.2 1.56 62.5
(Unit: mm)

70 60 50 10V 5.5V 5.0V VGS = 4.5V

70 60

1.0

500 Tc = 55C 25C 150C
(VDS = 10V)
(Ta = 25C)
(VDS = 10V)
0.8 50 100 0.6 0.4 ID = 70A 0.2 35A 1 0 5 10 15 20 1
ID (A)
ID (A)
40 30 20 10 0 0 0.5
40 30 20 10 Ta = 150C 25C 55C
Re (yfs) (S)
VDS (V)
10
1.0
1.5
2.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
10
1.40.2
3 0.5
+0.3
2.0 30
3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 110
V A A V S m pF pF pF ns ns ns ns V ns C/W C/W
(5)
(0.45)
(1.4)
1.30.2
10.5 0.5
9.10.3
+0.3
2.60.2 0.1 0.1

+0.2
1.20.2
70
VDS (V)
VGS (V)
VGS (V)
ID (A)
RDS (ON) I D Characteristics (typ.)

7.0 6.0
Ta = 25C VGS = 10V
RDS (ON) TC Characteristics (typ.)

12.0 10.0
ID = 35A VGS = 10V
j-c
10
t Characteristics (Single pulse)
Dynamic I/O Characteristics (typ.)

30 VDS (ID = 35A) 15
RDS (ON) (m)
j-c (C/W)
5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70
RDS (ON) (m)
8.0 6.0 4.0 2.0 0 60 50
20
10 VGS VDD = 8V 12V 14V 16V 24V
0.1
10
50
100
150
0.01 0.00001 0.0001 0.001 0.01
0 0.1 1 10 100 0 50 100
0 150
ID (A)
Tc (C)
t (s)
Qg (nC)
Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)

50000

500 100
(O N)
(Ta = 25C)
VGS = 0V f = 1MHz
70 60 50
(Ta = 25C)
PT
IT ED
90 80 70 60
=1
Capacitance (pF)
PT
PT
10000 Ciss
LI
PT
=1
=1
m
0 s
=1
00 s
IC (A)
40 30 20 Ta = 150C 25C 55C
10
RD
PD (W)
IDR (A)
0m
50 40 30
1000
Coss Crss 10
20 10
100
0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1 0.1
0 1 10 100 0 20 40 60 80 100 120 140 160
VDS (V)
VSD (V)
VDS (V)
Tc (C)
VGS (V)
VDS (V)
111
MOS FET 2SK3801

(Ta=25C)
External Dimensions TO-3P

1.8 5.00.2 15.60.4 13.6 9.6 4.80.2 2.00.1
min 40
Ratings typ
max 10 100 4.0 6.0
Unit
100 (Tc=25C) 400 150 40 to +150
* 1: PW 100 s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

RG = 50
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)
ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s
2.0 30
3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100
1.5 1.25 35.71
V A A V S m pF pF pF ns ns ns ns V ns C/W C/W
19.90.3 4.0
2.0
a b
3.20.1
20.0 min 4.0 max
2 3
1.05 0.1
+0.2 +0.2
0.65 0.1
5.450.1
15.80.2
5.450.1
1.4
(1)
(2)
(3)

70 60 50 10V 5.5V 5.0V VGS = 4.5V

70 60

1.0

1000 Tc = 55C 25C 150C
(VDS = 10V)
(Ta = 25C)
(VDS = 10V)
0.8 50 40 30 20 10 0 0.5 1.0 1.5 2.0 0 0 Ta = 150C 25C 55C
40 30 20 10 0
VDS (V)
ID (A)
ID (A)
0.6 0.4 ID = 70A 0.2 35A
Re (yfs) (S)
100
10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1 0 5 10 15 20 1 10 70
VDS (V)
VGS (V)
VGS (V)
ID (A)
RDS (ON) I D Characteristics (typ.)

7.0 6.0
Ta = 25C VGS = 10V
RDS (ON) TC Characteristics (typ.)

10.0 8.0
ID = 35A VGS = 10V
j-c
10
Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.)

30 VDS (ID = 35A) 15
RDS (ON) (m)
5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70
RDS (ON) (m)
j-c (C/W)
VDS (V)
20 VGS VDD = 8V 12V 14V 16V 24V
10
6.0 4.0 2.0 0 60 50
0.1
10
50
100
150
0.01 0.00001 0.0001 0.001 0.01
0 0.1 1 10 100 0 50 100
0 150
ID (A)
Tc (C)
Pw (s)
Qg (nC)
Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)

50000

500 100
(O N)
(Ta = 25C)
VGS = 0V f = 1MHz
70 60 50
(Ta = 25C)
PT
IT ED
120 100 80
=1
Capacitance (pF)
PT
PT
10000 Ciss
M LI
PT
=1
=1
40 30 20 Ta = 150C 25C 55C
IC (A)
10
RD
PD (W)
IDR (A)
=1 m 0m s s
00
60 40
1000
Coss Crss 10
1 20 0.1 0.1 0 1 10 100 0 20 40 60 80 100 120 140 160
100
0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS (V)
VSD (V)
VDS (V)
Tc (C)
112
VGS (V)

(Ta=25C)
min 40
Ratings typ
max 10 100 4.0
Unit
100 (Tc=25C) 730 150 55 to +150
* 1: PW 100 s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

RG = 50
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr
(1.5)
ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s
10.0 0.5
8.60.3
2.0 50 2.1 10500 2400 1900 90 230 490 760 0.85 90
3.0
1.2
V A A V S m pF pF pF ns ns ns ns V ns
10.20.3 (1.4)
4.440.2 1.30.2
+0.3
a b
1.6
+0.2
0.10.1
3.0 0.5
+0.3
1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5

+0.2
0.40.1
113
MOS FET 2SK3851

Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr Test Conditions
(Ta=25C)
External Dimensions TO-3P

1.8 5.00.2 15.60.4 13.6 9.6 4.80.2 2.00.1
min 60
Ratings typ
max
10 100 3.0
Unit
150 280 150 55 to +150
ID = 100 A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD 16V RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 50A, di/dt = 100A/S
2.0 30
2.5 4.0 11500 1500 1100 60 25 370 65 0.87 70
4.7
* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped
1.5
19.90.3 4.0
2.0
a b
3.20.1
20.0 min 4.0 max
2 3
1.05 0.1
+0.2 +0.2
0.65 0.1
5.450.1
15.80.2
5.450.1
1.4
(1)
(2)
(3)
ID VDS Characteristics
90 80 70 60 4.5V 10V
ID VGS Characteristics
100 80
VDS VGS Characteristics

(VDS = 10V)
1.0 0.8
Re (yfs) ID Characteristics
500
(Ta = 25C)
(Ta = 25C)
(VDS = 10V)
100
ID (A)
50 40 30 20 10 0 VGS = 4.0V
ID (A)
60 40 Ta = 150C 25C 55C
0.6
Re (yfs) (S)
VDS (V)
0.4 0.2 0
ID = 85A ID = 42A
10
55C 25C 150C
20 0 0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6
10 12 14 16 18
10
50
100
VDS (V)
VGS (V)
VGS (V)
ID (A)
RDS (ON) I D Characteristics

6.0 5.0
Ta = 25C VGS = 10V
RDS (ON) TC Characteristics

8.0 7.0
VGS = 10V ID = 25A
j-c t
10
RDS (ON) (m)
RDS (ON) (m)
j-c (C/W)
50 0 50 100 150
6.0 5.0 4.0 3.0 2.0 1.0 0 100
4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90
0.1
0.01 0.0001
0.001
0.01
0.1
10
ID (A)
Tc (C)
t (s)

50000 Ta = 25C VGS = 0V f = 1MHz Ciss 90 80 70 60 Ta = 150C 25C 55C
PD TC Characteristics
160 140 120
(Ta = 25C)
Capacitance (pF)
10000
50 40 30 20
PD (W)
100 80 60 40 20 0
1000 Crss 500 0 10 20 30 40
Coss 50 60
IDR (A)
10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
25
50
75
100
125
150
VDS (V)
VSD (V)
Tc (C)
114
MOS FET FKV460S

Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 +20, 10 60 180 Unit V V A A W C C
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = +20V VGS = 10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD = 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V min 40 +10 5 100 2.3 7 2800 1400 600 20 600 250 100 1.0 9 Ratings typ max
(Ta=25C) Unit V
10.20.3 (1.4)
4.440.2 1.30.2
A A V S m pF pF pF ns ns ns ns V
10.0 0.5
+0.3
60 (Tc=25C) 150 55 to +150 100s, duty 1%
a
8.60.3
(1.5)
1.3 20.0
1.6
+0.2
0.10.1
3.0 0.5
+0.3
1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5

+0.2
0.40.1
1.5

60 50 40 10V 5.0V 4.0V (Ta = 25C) 3.5V

70 60 (VDS = 10V)

1.0 0.8 (Ta = 25C)
500 (VDS = 10V)
50
ID (A)
ID (A)
40 30 20 10 Ta = 150C 25C 55C
VDS (V)
0.6 0.4 0.2 ID = 60A
Re (yfs) (S)
100 50
55C 25C 150C
30 VGS = 3.0V 20 10 0 0 1 2 3 4 5
25A 10A
10 20 5 1 5 10 60
10
15
VDS (V)
VGS (V)
VGS (V)
ID (A)

14 12
Ta = 25C VGS = 10V

14 12
VGS = 10V ID = 25A
(C/W)
j-c
j-a t

j-a FR4 (70 100 1.6mm)
50 10
RDS (ON) (m)
10 8.0 6.0 4.0 2.0 0 0 10 20 30 40 50 60
RDS (ON) (m)
10 8.0 6.0 4.0 2.0 0 60 50 0 50 100 150
Use substrate 1 0.1

j-c
j-c
j-a
0.01 0.0001
0.001
0.01
0.1
10
ID (A)
Tc (C)
t (s)

10000 (Ta = 25C) VGS = 0V f = 1MHz Ciss 60 10V 50 5V 40 (Ta = 25C)

200 ID (pulse) max 100
L N) (O DS IM IT
(Ta = 25C)
ED
PT =1
70 60 50
PT
=1
Capacitance (pF)
PD (W)
IDR (A)
1000
Coss Crss
30 VGS = 10V 20 10
IC (A)
10
0m
40 30 20 10
100 0 10 20 30 35
0 0 0.2 0.4 0.6 0.8 1.0 1.2
0.1 0.1
0 1 10 50 0 25 50 75 100 125 150
VDS (V)
VSD (V)
VDS (V)
Tc (C)
115
MOS FET FKV660S

Symbol Ratings VDSS 60 +20, 10 VGSS 60 ID 180 ID(pulse) PD 60(Tc=25C) Tch 150 Tstg 40 to +150 PW 100s, duty 1% Unit V V A A W C C
Symbol V(BR)DSS IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD Test Conditions ID=100 A, VGS=0V VGS =+20V VGS =10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=25A VGS=10V, ID=25A VDS=10V f=1.0MHz VGS=0V ID=25A VDD=12V RL=0.48 VGS=10V ISD=50A, VGS=0V min 60 Ratings typ
( Ta=25C) max +10 5 100 2.5 11 2500 900 150 50 400 400 300 1.0 14 Unit V
10.20.3 (1.4)
4.440.2 1.30.2
A A V S m pF pF pF ns ns ns ns V
+0.3
a
10.0 0.5 8.60.3
1.270.2 +0.2 0.86 0.1 2.540.5 1.20.2 2.540.5
3.0 0.5
+0.3
(1.5)
1.0 20
1.6 +0.2 0.1 0.1
0.40.1
1.5
180 160 140 120 10V 6V 4.5V
1000 100 10
VDS VGS Characteristics

(VDS = 10V)
1.4 1.2
1000 55C 25C 150C
(Ta = 25C)
(Ta = 25C)
(VDS = 10V)
Re (yfs) (S)
1.0
100
VDS (V)
ID (A)
ID (A)
100 80 60 40
4V
0.8 ID = 60A 0.6 0.4 25A 0.2 10A
1 0.1
VGS = 3.5V
0.01 20 0 0 2 4 6 8 10 12 0.001 0 1 2
Ta = 150C 100C 50C 25C 0C 55C 3 4 5 6
10
1 0 5 10 15 20 1 10 100 200
VDS (V)
VGS (V)
VGS (V)
ID (A)

0.030 0.025

(Ta = 25C)
0.030 0.025 0.020 0.015 0.010 0.005 VGS = 10V VGS = 4V
Capacitance VDS Characteristics

(ID = 25A)
10000
(Ta = 25C)
VGS = 0V f = 1MHz
0.020 0.015 0.010 0.005 0 1 10 100 200 VGS = 4V VGS = 10V
Capacitance (pF)
RDS (ON) ()
RDS (ON) ()
Ciss 1000
Coss Crss 100 0 10 20 30 40 50
0 60 50
50
100
150
ID (A)
Tc (C)
VDS (V)
IDR VSD Characteristics

180 160 140 120
Ta = 25C VGS = 0V

500
ID (pulse) max
(Ta = 25C)
100
L N) (O IM IT ED
IDR (A)
100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID (A)
PT
PT
=1
10
DS
=1 m s 0m s
0.1 0.1
10
100
VSD (V)
VDS (V)
116
Surface-mount MOS FET Array SDK06

Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg Ratings 525 20 3 6
3 (Tc=25C, 4 circuits operate)
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10k ISD = 1A, VGS = 0V min 47 Ratings typ 52 max 57 1.0 100 2.5 0.25 0.3
(Ta=25C) Unit V A A V S pF pF pF s s s s V
40 150 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10
Unit V V A A W mJ C C
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
4.0max
2.0 7.4 3.3 4.2 1.0
1.40.2
3.60.2
0.2 0.25 200 120 20
0 to 0.15
1.0 1.0
1.8
a b
Pin 1 20.0max
0.2
0.3
+0.15 0.05
19.56
1.5
6 5
VGS = 5V VGS = 10V VGS = 4V
20 10
VDS = 10V
R DS (ON) I D Characteristics
0.8
VGS = 4V Ta = 150C
0.6
RDS (ON) ()
ID (A)
ID (A)
75C
3 2
VGS = 3V
0.4
25C
0.1
1 0 0.01
Ta = 55C 25C 75C 150C
55C
0.2
10
12
14
0 0 1 2 3 4 5 6
VDS (V)
VGS (V)
ID (A)
R DS (ON) TC Characteristics
0.5
ID = 1A
Re (yfs) I D Characteristics
10
VDS = 10V
I DR VSD Characteristics
10
0.4
VGS = 4V typ.
RDS (ON) ()
Re (yfs) (S)
0.2
VGS = 10V typ.
IDR (A)
0.3
0.1
0.5
Ta = 55C 25C 150C
Ta = 150C 75C 25C 55C
0 50 0 50 100 150
0.2 0.05 0.1
0.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tc (C)
ID (A)
VSD (V)

10
ID (pulse) max
(Tc = 25C)
10 0 s
5
(o n)
LI
IT
ED
1m
m 10
S D
ID (A)
15 16
13 14
11 12
10
1
1 3 5 7
0.5
2 4 6 8
0.1 0.5
10
50
VDS (V)
117
(Ta=25C) Unit V V A A W 4 (Tc=25C, 4 circuits operate) 80 mJ C 150 C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg Ratings 50 20 4.5 9
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V min 50 100 100 2.3 13.0 0.08 0.1 Ratings typ max
(Ta=25C) Unit V nA A V S pF pF pF ns ns ns ns V
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
0 to 0.15
1.3 5.0
4.0max
50 80 60 40 1.0
1.40.2
3.60.2
1.8 9.0 0.07 0.09 700 300 90
a b
Pin 1 20.0max
0.2
+0.15 0.3 0.05
19.56
1.5

18 16 14 12
20 10

(VDS = 10V)
1.4 1.2 Ta = 150C 75C 25C 0C 55C
100 Ta = 150C 25C 55C
(Ta = 25C)
VGS = 4V
(ID = 4A)
(VDS = 10V)
VDS (V)
ID (A)
10 8 6 4 2 0 0 3 6 9 12 15 VGS = 3V
ID (A)
VGS = 10V
0.8 0.6 0.4 0.2
0.1
0.01
Ta = 150C 75C 25C 0C 55C 0 1 2 3 4 5
Re (yfs) (S)
1.0
10
0.001
10
0.1 0.05 0.1
10
VDS (V)
VGS (V)
VGS (V)
ID (A)

0.20

0.20
RDS (ON) TC Characteristics (typ.) S/W Time W ID Characteristics

0.20
(VGS = 10V)
Ta = 150C 75C 25C 0C 55C
(VGS = 4V)
(ID = 4A)
500
(single pulse) (Ta = 25C)

VDD = 12V constant RGS = 50 VGS = 5V
RDS (ON) ()
RDS (ON) ()
RDS (ON) ()
0.15
0.15
0.15 VGS = 4V
S/W Time (ns)
Ta = 150C
100 t d (off) t d (on)
tr
0.10
0.10
75C 25C 0C 55C
0.10
tf
0.05
0.05
0.05
VGS = 10V
10 0 0 0 60 50 5 0.1 0.5 1 5 10
10
12
10
12
50
100
150
ID (A)
ID (A)
Tc (C)
ID (A)

Capacitance VDS Characteristics ISD VSD Characteristics (typ.)
5000
PT Ta Characteristics
4 4 circuits operate 3 circuits operate 2 circuits operate 1 circuits operate
1
(Ta = 25C)
VGS = 0V f = 1MHz
8 7 6 Ta = 150C 75C 25C 0C 55C
Capacitance (pF)
1000
15
16
13
14
11
12
10
4 3 2 1 0
P T (W)
ISD (A)
Ciss
100
Coss
Crss 10 5 0.1 1 10 100
0 0 0.3 0.6 0.9 1.2 1.5 0 50 100 150
VDS (V)
VSD (V)
Ta (C)
118

Symbol Ratings 120 VDSS 20 VGSS 6 ID 10 ID (pulse) *1 3 (Tc=25C, 4 circuits operate) PT EAS *2 80 Tch 150 Tstg 55 to +150 Unit V V A A W mJ C C
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID=100A, VGS=0V VGS=20V VDS=120V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3 VGS=5V RG=50 ISD=6A, VGS=0V min 120 5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max
(Ta=25C) Unit V A A V S pF pF pF ns ns ns ns V
1.00.3
0.25
0.890.15 0.75 0.05

+0.15
2.540.25
16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5
0 to 0.15
1.0 5.0
a b
Pin 1 20.0max
0.2
+0.15 0.3 0.05
4.0max
*1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50
19.56
1.40.2
3.60.2
1.5
16
VGS=10V
10
VDS=10V
0.30 0.25
VGS=4V
12
8
VGS=4.5V
RDS (ON) ()
0.20 0.15
VGS=10V
ID (A)
ID (A)
4 2
Ta=55C 25C 75C 150C
0.10 0.05 0
1.0
2.0
3.0
4.0
10
VDS (V)
VGS (V)
ID (A)
0.45 0.40
ID=4A VGS=4V
50
6
VGS=0V
5 10 0.30 4
Ta=150C 75C 25C 55C
RDS (ON) ()
Re (yfs) (S)
IDR (A)
10
0.20
VGS=10V
3 2 1 0
1 0.5
0.10
Ta=55C 25C 75C 150C
0 50 0 50 100 150
0.1 0.05 0.1
0.5
0.2
0.4
0.6
0.8
1.0
1.2
Tc (C)
ID (A)
VSD (V)

1000 500
Ciss

20 10 5
ID (pulse) max
ID (DC) max
(Ta = 25C)
10
Capacitance (pF)
ID (A)
VGS =0V f=1MHz
RDS (on) LIMITED
10
10 0m
1m
m s
0 s
15 16 13 14 11 12 9 10
100
Coss
1 0.5
s
1 3 5 7
50
Crss
10 0 10 20 30 40 50
0.1 1 5 10 50 100 200
VDS (V)
VDS (V)
119
MOS FET Array SLA5027

Symbol VDSS VGSS ID ID (pulse)*1 PT EAS*2
j-c
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75 VGS = 5V RG = 50 ISD = 10A, VGS = 0V min 60 100 100 2.0 0.08 Ratings typ max
(Ta=25C) Unit V A A V S pF pF pF ns ns ns ns V
External Dimensions SLA 12pin (LF800)
16.00.2
13.00.2
5 (Ta=25C, 4 circuits operate) 60 (Tc=25C,4 circuits operate)
8.5max
9.90.2
1.0 6.0
9.5min (10.4)
2.7
250 2.08
(Fin to lead terminal) AC1000
150 55 to +150 *1 PW 250s, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50
VISO Tch Tstg
mJ C/W Vrms C C
1.5 12.0 0.07 1100 500 170 50 250 250 180 1.0
a b
Pin 1 1.20.15 0.85

+0.2 0.1
12 1.450.15 11P2.540.7 =27.941.0 31.5 max 0.55

+0.2 0.1
Ratings 60 20 12 48
Unit V V A A W W
31.00.2 3.20.15 24.40.2 16.4

0.2
Ellipse 3.20.15 3.8 4.80.2 1.70.1
2.20.7
1 2 3 4 5 6 7 8 9 10 11 12
1.5
10
12 10
VDS = 10V
0.1
RDS (on) ()
4V 5V 10V
VGS = 4V
ID (A)
ID (A)
VGS = 3V
6 4
Ta = 150C 75C 25C 55C
0.05
VGS = 10V
2 0 0 0.1
10
20
VDS (V)
VGS (V)
ID (A)
0.12
VGS = 4V
30
VDS = 10V
20 10 5
VGS = 0V
0.10
RDS (ON) ()
Re (yfs) (S)
VGS = 10V
IDR (A)
1 5 10 20
10
0.06
1 0.5
0.02 50
50
100
150
2 0.4
0.1
0.4
0.8
1.2
Tc (C)
ID (A)
VSD (V)

2000
VGS = 0V f = 1MHz

50
ID (pulse) max
S (o n) LI su me M IT dV ED GS =4 V li ne
(Ta = 25C)
0. 5m
1000
Ciss
R
1m
Capacitance (pF)
10
As
500
10
ID (DC) max
s 10 0m
10
ID (A)
Coss
11
100
Crss
12
1 0.5 0.5
50 1 5 10 50
10
50 100
VDS (V)
VDS (V)
120
MOS FET Array SLA5098 (under development)

Symbol VDSS VGSS ID ID (pulse)* EAS IAS Ratings 40 20 20 40 Unit V V A A
(Ta=25C)
min 40
Ratings typ
max 10 100
Unit
13.00.2
9.90.2
8.5max
To be defined To be defined 5(
Without heatsink, Ta=25C, All circuits operate
mJ A
Tc=25C, 90 ( All circuits operate )
W
C C
Tch Tstg
150 55 to +150
VDS = 10V f = 1.0MHz VGS = 0V ID = 10A VDD = 14V RL = 1.4 VGS = 10V RG = 50 ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V di/dt = 100A/s
2.7
PT
* PW 100s, duty 1%
1450 420 260 40 40 200 100 0.85 45
9.5min (10.4)
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr
ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 10A VGS = 10V, ID = 10A
1.5 10
16.00.2
2.5 17
1.2
31.00.2 3.20.1 24.40.2 16.4

0.2
Ellipse 3.20.1 3.8 4.80.2 1.70.1 Lead plate thickness resins 0.8 max 15
+0.2 +0.2
a b
Pin 1 1.20.15 0.65 0.1 1.15 0.1 14P2.030.4 = 28.420.8 31.5 max
0.55 0.1
+0.2
2.20.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
14
5 3
10 8
15 13
12
11
121
MOS FET Array SMA5113

Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 IAS
j-a j-c
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD 200V RL = 57 VGS = 10V RG = 50 ISD = 7A, VGS = 0V min 450 100 100 4.0 5.0 0.84 720 150 65 25 40 70 50 1.0 1.1 Ratings typ max
(Ta=25C) Unit V nA A V S pF pF pF ns ns ns ns V
External Dimensions SMA (LF1000)
10.20.2
Ratings 450 30 7 28
4 (Ta=25C, All circuits operate, No Fin) 35 (Tc=25C, All circuits operate, Fin)
Unit V V A A W W mJ A C/W C/W
4.00.2 31.00.2 2.50.2
b 2.4 a
30
2.0 3.5
130 7 31.2 3.57

Junction - Ambientare, Ta=25C, All circuits operate Junction - Case, Ta=25C, All circuits operate
(10.4)
1.210.15 1.460.15 0.85 0.1 11 P2.540.1=27.94

+0.2 +0.2
0.55 0.1
1.20.1
31.5 max (Including both-side resin burr)
C 150 C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50
Tch Tstg
1 2 3 4 5 6 7 8 9 10 11 12
1.5
7
10V 5.5V
7 6 5
VDS = 20V
RDS (ON) ID Characteristics

1.5
VGS = 10V
6 5
ID (A)
5V
ID (A)
4 3 2 1 0
VGS = 4.5V
4 3 2 1 0
Ta = 55C 25C 150C
RDS (ON) ()
0 2 4 6 8 10
1.0
0.5
10
15
20
VDS (V)
VGS (V)
ID (A)

2.5
VGS = 10V ID = 3.5A
100
VDS = 20V
IDR VSD Characteristics

7
VGS = 0V
2.0
50
6 5
RDS (ON) ()
1.0
10
Ta = 55C 25C 150C
IDR (A)
7
1.5
Re (yfs) (S)
4 3 2 1
0.5
0 50 0 50 100 150
2 0.05 0.1
0.5
0.2
0.4
0.6
0.8
1.0
Tc (C)
ID (A)
VSD (V)

1000
Ciss

50
ID (pulse) max
(Ta = 25C)
500
10
VGS = 0V f = 1MHz
Capacitance (pF)
10 ID (DC) max 5
RD
S
(o
ED IT IM )L
1m
10
0 s
3 6 7 10
ID (A)
10
1 0.5
s
1 4 8 11
0m
100 50
Coss
12
Crss
0.1 20 0 10 20 30 40 50 0.05 3 5 10 50 100 500
VDS (V)
VDS (V)
122
MOS FET Array STA508A

Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 20 6 10
4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50
(Ta=25C) Unit V V A A W W
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V min 120 5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max
(Ta=25C) Unit

25.25
0.2
1.0 5.0
1.5
V A A V S pF pF pF ns ns ns ns V
0.2
0.2
9.0
0.2
b a
11.3
3.5
0.5
2.3
1.0
0.25
0.5
0.15
(2.54) 0
0.3
0.3
9 2.54=22.86
0.05
0.15
1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S
16
VGS = 10V
10
VDS = 10V
0.30 0.25
VGS = 4V
12
8
VGS = 4.5V
RDS (ON) ()
0.20 0.15
VGS = 10V
ID (A)
ID (A)
4 2
Ta = 55C 25C 75C 150C
0.10 0.05 0
1.0
2.0
3.0
4.0
0.5
1.2
4.0
C1.5
0.5
0.2
0.2
10
VDS (V)
VGS (V)
ID (A)
0.45 0.40
ID = 4A VGS = 4V
50
6
VGS = 0V
5 10 0.30 4
Ta = 150C 75C 25C 55C
RDS (ON) ()
Re (yfs) (S)
IDR (A)
10
0.20
VGS = 10V
3 2 1 0
1 0.5
0.10
Ta = 55C 25C 75C 150C
0 50 0 50 100 150
0.1 0.05 0.1
0.5
0.2
0.4
0.6
0.8
1.0
1.2
Tc (C)
ID (A)
VSD (V)

1000 500
Ciss

20 10 5
ID (pulse) max
ID (DC) max
(Ta = 25C)
10
Capacitance (pF)
ID (A)
VGS = 0V f = 1MHz
RDS (on) LIMITED
10
10 0m
1m
m s
0 s
s
3 5 7 9
100
Coss
1 0.5
50
10
Crss
10 0 10 20 30 40 50
0.1 1 5 10 50 100 200
VDS (V)
VDS (V)
123
MOS FET Array STA509A

Symbol VDSS VGSS ID ID (pulse) *1 PT Ratings 525 20 3 6 Unit V V A A W W
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10 ISD = 6A, VGS = 0V min 47 Ratings typ 52 max 57 1.0 100 2.5 0.25 0.3
(Ta=25C) Unit V A A V S pF pF pF s s s s V
External Dimensions STA

25.25
0.2
0.2
0.2
9.0
0.2
b a
11.3
4 (Ta = 25C) 20 (Tc = 25C) EAS *2 40 mJ Tch C 150 Tstg C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10
1.0 1.0 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0
3.5
0.5
2.3
1.0
0.25
0.5
0.15
(2.54) 0
0.3
0.3
9 2.54=22.86
0.05
0.15
1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S
1.5
6 5
VGS = 5V VGS = 10V VGS = 4V
20 10
VDS = 10V
0.8
VGS = 4V Ta = 150C
0.6
RDS (ON) ()
4 1
0.5
75C
ID (A)
ID (A)
1.2
3 2
VGS = 3V
0.4
25C
0.1
1 0 0.01
Ta = 55C 25C 75C 150C
55C
0.2
10
12
14
0 0 1 2 3 4 5 6
4.0
C1.5
0.5
0.2
0.2
VDS (V)
VGS (V)
ID (A)
0.5
ID = 1A
10
VDS = 10V
10
0.4
VGS = 4V typ.
RDS (ON) ()
Re (yfs) (S)
0.2
VGS = 10V typ.
IDR (A)
0.3
0.1
0.5
Ta = 55C 25C 150C
Ta = 150C 75C 25C 55C
0 50 0 50 100 150
0.2 0.05 0.1
0.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tc (C)
ID (A)
VSD (V)

10
ID (pulse) max
(Tc = 25C)
10 0 s
5
(o n)
LI
IT
ED
1m
10
S D
m s
ID (A)
1
2 4 6 8
0.5
10
0.1 0.5
10
50
VDS (V)
124
Thyristor with built-in reverse diode for HID lamp ignition TFC561D
Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/s Gate trigger current: I GT=20mA max With built-in reverse diode

10.20.3 (1.4) 4.440.2 1.30.2
10.0 0.5
+0.3
1.20.2 11.0 0.86 0.1 0.760.1

+0.2 0.5
11.30.5
8.60.3
1.270.2
2.590.2

Parameter Repetitive peak off-state voltage Repetitive surge peak on-state current Critical rate-of-rise of on-state current Peak forward gate current Peak gate power loss Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current Junction temperature Storage temperature Symbol VDRM Ratings 600 Unit V Conditions Tj=40 to +125C, RGK=1k VD 430V, 100kcycle,
2.540.5
2.540.5
0.40.1
ITRM di/dt IFGM PGM PG (AV) VRGM I FRM Tj Tstg
430 1200 2.0 5.0 0.5 5 240 40 to +125 40 to +125
A A/s A W W V A C C
(1) (2) (3)
Wp=1.3s, Ta=125C
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
*
f f 50Hz, duty 50Hz, duty 10% 10%
Weight: Approx. 1.5g
f VD
50Hz 430V, 100kcycle,
Measurement circuit
*
L
Wp=1.3s, Ta=125C
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.
VD
Sample
G1
C G2
Parameter On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Off-state current (1) Off-state current (2) Thermal resistance Diode forward voltage Symbol min VTM VGT IGT VGD IH IDRM (1) IDRM (2) Rth VF 0.1 2 10.0 100 1 4.0 1.4 Ratings typ max 1.4 1.5 20 V V mA V mA A mA C/W V IT=10A VD=6V, RL=10 VD=6V, RL=10 VD=480V, Tj=125C RGK=1k, Tj=25C Unit Conditions
(Tj=25C)
Current waveform (1cycle)

(Ta=25C)
VD=VDRM, RGK=1k, Tj=125C Junction to case IF=10A
100A/div
VD=VDRM, RGK=1k, Tj=25C
2s/div
125
Thyristor with built-in reverse diode for HID lamp ignition TFC562D
Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=600A Critical rate-of-rise of on-state current: di/dt=1600A/s Gate trigger current: I GT=20mA max With built-in reverse diode

4.440.2 (1.4) (5) 1.30.2
(0.45)
9.10.3
10.5 0.5
+0.3
2.60.2 (Root dimension)

Parameter Repetitive peak off-state voltage Repetitive surge peak on-state current Critical rate-of-rise of on-state current Peak forward gate current Peak gate power loss Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current Junction temperature Storage temperature Symbol VDRM Ratings
600 600 1600 2 5 0.5 5 460 40 to +125 40 to +125
1.34 0.1 0.860.1
+0.2 +0.2
V A A/s A W W V A
Tj = 40 to +125C, RGK = 1k Ta = 100C, VD 430V, WP = 1.05 s, IG = 70mA, dig/dt = 0.5A/s, 100kcycle*, See the examples of current waveforms f f 50Hz, duty 10% 50Hz, duty 10%
0.760.1
ITRM di/dt IFGM PGM PG (AV) VRGM I FRM Tj Tstg
2.540.1 (Root dimension) 10.20.3
0.40.1 2.540.1 (Root dimension)
50Hz
Ta = 100C, VD 430V, WP = 1.05s, 100kcycle*, See the examples of current waveforms
C C
Current waveform (1cycle)

(Ta=100C)
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.
Parameter On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Off-state current (1) Off-state current (2) Thermal resistance Diode forward voltage Symbol VTM VGT IGT (1) VGD IH IDRM (1) IDRM (2) Rth VF
0.1 2 5 10 1 4.0 1.4
(Tj=25C)
Ratings min typ max

1.4 1.5 20
Unit
V V mA V mA A mA C/W V IT = 10A
Conditions
VD = 6V, RL = 10 VD = 6V, RL = 10 VD = 480V, Tj = 125C RGK = 1k, Tj = 25C VD = VDRM, RGK = 1k, Tj = 25C VD = VDRM, RGK = 1k, Tj = 125C
V: 200A/div
H: 2 s/div
* A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100C (= Ta). Repeat this cycle operation.
Junction to case, With infinite heatsink

IF = 10A
126
11.00.5
Unit
Conditions
(2.69) (1.8)
Rectifier Diodes for Alternators

Normal Type
Part No. SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR SG-10LS SG-10LR SG-10LXS SG-10LXR SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR VRM (V) 200 200 200 200 150 200 150 Absolute maximum ratings Tstg Tj IF (AV) IFSM (A) (A) (C) 20 30 35 30 35 40 45 200 300 350 300 350 400 450 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 VF (V) max 1.10 1.10 1.10 1.2 1.05 1.05 1.0 Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max 20 30 35 100 100 100 100 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Condition IZ (mA) 2 3 Fig. No. 1
Zener Type
Part No. SG-9CZS SG-9CZR SG-9LLCZS SG-9LLCZR SG-10LZ23S SG-10LZ23R SG-10LLZ23S SG-10LLZ23R SG-14LXZS SG-14LXZR VRM (V) 17 17 17 17 16 Absolute maximum ratings Tj Tstg IF (AV) IFSM (A) (A) (C) 20 35 30 40 35 200 350 300 400 350 40 to +200 40 to +200 40 to +150 40 to +150 40 to +200 VF (V) max 1.10 1.10 1.2 1.05 1.15 Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max 20 35 100 100 100 0.05 0.05 0.05 0.05 0.05 233 233 233 233 223 Condition IZ (mA) 10 10 10 3 10 100 4 Fig. No. 1 2

Fig. 1
S: 19.01.0 R: 23.01.0
Fig. 2
1.5 3.10.1
1.5 3.10.1 (R0.5)
S: 19.01.0 R: 23.01.0
50.4
Polarity
1.2
50.4
Polarity
7.00.2 8.40.2
8.40.2 S type R type 9.50.2
1.2
S type
R type
Fig. 3
13.5 10.0
5.0 2
Fig. 4
12.84 11.5 1.26
24.0
(1.5) (4)
2.5
R1.2 1.4 0.4 1.0
S : 20.5 R : 28.5
2.0 (2)
10.7
(5.8)
Polarity
4.0 4.7 8max 10max
Polarity
)
3.0 4.2 5.0
3.6
(45
(30
0.6
4.4
R type
S type
9.0 0.3
S type
R type
127
High-voltage Diodes for Igniters
Part No.
VRM (kV)
Absolute Maximum Ratings IRSM IRSM IF (AV) (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100s half-power average signal bandwidth 30 30 30 30 30 10 3 3 3
Electrical Characteristics (Ta=25C)

Tj Tstg VF (V) max IR Vz (A) (kV) VR =VRM IR =100A IF (mA) max 0.55 to 1.0 10 10 2.6 to 5.0 3.2 to 6.0
Condition
Fig. No.
(C) 1 40 to +150 5 6
SHV-01JN SHV-05J SHV-06JN
0.5 2.5 3.0
2 1 2

Fig. 1 (SHV-05J)
0.5 2.5 C0.5 C0.5 27min 50.2 27min 27min 6.5 27min
0.2
Fig. 2 (SHV-06JN)
0.5 2.50.2
128
Power Zener Diode
(Ta=25C)
Absolute Maximum Ratings Part No. P (W) 1 1 1 1 1 1 5 5 5 6 6 1500 (5ms) 85 (500 s) PR (W) 50 (5ms) VDC (V) 20 20 13 20 25 27 20 22 22 22 22
I ZSM (A)
Electrical Characteristics Tstg VZ (V) 1mA instantaneous current 25.0 to 31.0 25.0 to 31.0 16.8 to 19.1 25.1 to 28.9 31.0 to 35.0 34.0 to 38.0 25.0 to 31.0 24 to 30 36 to 40 24 to 30 36 to 40
Condition
Tj
(C)
40 to +150 55 to +150 55 to +150 55 to +150 55 to +150 55 to +150 40 to +150 55 to +175 55 to +175 55 to +175 55 to +175
IR Fig. VR =VDC No. ( A) IZ (mA) max 1 1 1 1 1 1 10 10 10 10 10 10 10 10 10 10 10 50 10 10 10 10 1 2 2 2 2 2 3 4 4 4 4
Remarks
SFPZ-68 SJPZ-K28 * SJPZ-E18 * SJPZ-E27 * SJPZ-E33 * SJPZ-E36 * PZ628 SZ-10N27 SZ-10N40 * SZ-10NN27 SZ-10NN40 * * under development
2 2 65*1 70*1 40*1 90*1 55*1
Surface-mount type
Axial type
* 1: IZSM conditions
IRSM IRSM
2
Surface-mount type
10ms
Time
Fig. 1
2.6 0.2
4.5 0.2
Fig. 2
4.50.2
2.05 0.2
0.05
2.60.2
1.35 0.4
2.0min
1.35 0.4
1.10.2 1.50.2
1.30.4
5.1
+0.4 0.1
5.0 0.1
+0.4
1.30.4
1.50.2
Fig. 3
1.3 0.05
C2 Cathode marking
Fig. 3
8.50.5 100.3
50.3 20.3
56.0 0.7 10.0 0.02
100.3
15.50.5
10.0 0.2
13.50.3
2.70.3 7.20.5
30.5
2.00.5
(9.75)
0.050.05
2.150.2
+0.1
129
General-purpose Diodes
Rectifier Diodes
Surface-mount
Part No. VRM (V) I F (AV) (A) 0.9 1.0 400 SFPM-64 0.9 1.0 I FSM (A)
Peak value of 50 Hz half-wave signal
Tj (C)
Tstg (C)
VF (V) max 1.0 0.98
IR (A)
Condition I F (A)
I R (H) (mA) VR=VRM Condition Ta (C) max 50 50 50 50 100 100 100 100
VR=VRM max 10 10 10 10
Rth (j-l) (C/W) 20 20 20 20
Package
Weight (g) 0.072 0.072 0.072 0.072
SFPM-52 200 SFPM-62 SFPM-54
30 45 40 to +150 30 45
1.0 1.0 1.0 1.0
1 1 1 1
1.0 0.98
Ultra Fast Recovery Rectifier Diodes

Surface-mount
Part No. VRM (V) I F (AV) (A) 0.9 200 MPL-102S MP2-202S SFPL-64 400 1.0 10.0 20.0 1.0 I FSM (A)
Tj (C)
Tstg (C)
VF (V) max 0.98 0.98
IR (A)
Condition I F (A)
I R (H) (mA) VR=VRM Condition Ta (C) max 1 1 0.2 0.4 0.05 150 (Tj) 150 (Tj) 150 150 150
VR=VRM max 10 10 100 200 10
t rr (ns) 50 50 40 50 50
Condition I F/IRP (mA)
t rr (ns) 35 35 30 35 30
Condition I F/IRP (mA)
Rth (j-l) (C/W) 20 20 2.5 2.5 20
Package
Weight (g) 0.072 0.072 1.4 1.4 0.072
SFPL-52 SFPL-62
25 25 65 110 25 40 to +150
1.0 2.0 5.0 10.0 1.0
100/100 100/100 100/100 100/100 100/100
100/200 100/200 100/200 100/200 100/200
1 1 2 2 1
0.98 0.98 1.3
Schottky Barrier Diodes

Surface-mount
Part No. VRM (V) 30 30 30 40 40 40 40 60 60 60 60 90 90 I F (AV) (A) 1.0 2.0 3.0 1.0 2.0 2.0 3.0 0.7 1.5 2.0 2.0 0.7 1.5 I FSM (A)
Tj (C)
Tstg (C)
VF (V) max 0.45 0.45 0.45 0.55 0.55 0.6
IR (A)
Condition I F (A)
I R (H) (mA) VR=VRM Condition Ta (C) max 35 70 100 35 70 70 100 30 70 55 70 30 55 150 150 150 150 150 150 150 150 150 150 150 150 150
VR=VRM max 1.0 2.0 3.0 1 5 0.2 5 1 1 1 2 1 2
Rth (j-l) (C/W) 20 20 20 20 20 20 20 20 20 20 20 20 20
Package
Weight (g) 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072
SFPJ-53 * SFPJ-63 SFPJ-73 SFPB-54 SFPB-64 SFPE-64 SFPB-74 SFPB-56 SFPW-56 SFPB-66 SFPB-76 SFPB-59 SFPB-69
30 40 50 30 60 40 60 10 25 25 40 10 40 40 to +150
1.0 2.0 3.0 1.0 2.0 2.0 2.0 0.7 1.5 2.0 2.0 0.7 1.5
1 1 1 1 1 1 1 1 1 1 1 1 1
0.5 0.62 0.7 0.69 0.62 0.81 0.81
* under development

1: (Surface-mount SFP)
4.5
0.2
2: (TO-220S)
0.55 0.1 0.16 1.37 0.7 5.0 6.5 0.4 5.4 0.4 1.7 0.5 2.30.4 5.4 4.1 2.9
a b
2.6 0.2
5.5 0.4
1.2max
2.05 0.2
0.05
4.9 0 to 0.25
2.5 0.4
1.35 0.4
2.0min
1.35 0.4
1.1 0.2 1.5 0.2
2.29 0.5 2.29 0.5
5.1 0.1
+0.4
0.5 0.2
0.80.1
1.15 0.1
0.8 0.1
a) Part No. b) Polarity c) Lot No.

(Common with heatsink)
0.55 0.1 1.5 max

N.C Cathode Anode
130
General-purpose Diodes - Taping Specifications
Taping Specifications
Taping Name Emboss taping
4.5
0.2
Taping Dimensions (mm)

1.75 0.1
Packaging Dimensions (mm) and Markings Reel
Packaging Quantity
4.0
0.1
1.5
+0.1 0
Marking of Part No., Lot No., quantity, etc.
2.6 0.2
5.5 0.05
0.05 0.05
2.05 0.2
5.5
12.0 0.3
+ 0.1
2.0 0.5 13 0.5 65
1,800 pcs. per reel
1.35 0.4
2.0min 5.1 0.1

+0.4
1.35 0.4
1.1 1.5 0.2

Pull out direction
0.2
4.0 0.1
2.0 2.6
R1.0
210.8
A suffix "V" is added to Part No. for tape packaging.
(1) The right side of the tape is the cathode viewing in the unfold direction. (2) The product is inserted into the case with the installed electrode on the lower side. (3) A leader tape 150 to 200mm long is provided on the unfolding edge. (4) A space of at least 10 pitches equivalent is provided on either end of the tape. (5) Taping with reversed diode polarity is available on request (taping name VL).
3.1
178 2
141.5
2.0 0.5
Power Surface-mount - Taping Specifications

Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings
Part No.
Packaging Quantity
Pull out direction
Quantity
Taping name (type)
VL
A suffix "VL" is added to Part No. for tape packaging.
(Cover tape)
+0.1 1.5 0
Lot No.
Materials Disc: both-face white corrugated cardboard Core: foamed styrol
3,000 pcs.
35 1 3 8 1 3 8
per reel
20.1 40.1 120.1
1.75 0.1
(Seal part)
4.90.1
10
(Bottom dimensions)
11.50.1
10
B 3302 1001 130.2
21.50.1
14.40.1
240.3
80
60
40
20
22 120
Pull out direction
10.80.1
(Bottom dimensions)
(Seal part)
0.40.1
25.51 29.51
R135
2.5
5.4max
0.1
VR
A suffix "VR" is added to Part No. for tape packaging.
90.5
3,000 pcs.
20.5
7 0.5
per reel
210.8
High-voltage diodes for ignition - Taping Specifications

Taping Name Axial taping
50.5
Taping Dimensions (mm)
Packaging Dimensions (mm) and Markings
5 0.
13
130.5
.2 0
Packaging Quantity
V1
A suffix "V1" is added to Part No. for tape packaging.
6 1.0 58 1 6 1.0
1.2 max
Part No.
Lot No.
Quantity
1.5
5,000 pcs. per reel
29 75 1.5 25 1.0 max

1
3402
131
General-purpose Diodes - Taping Specifications
Power Zener Surface-mount - Taping Specifications

Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging Quantity
Pull out direction
VL
A suffix "VL" is added to Part No. for tape packaging.
35 1 3 B 1 3 B
750 pcs. per reel

1.500.1 2.000.1 4.000.1 1.750.1
5.640.1
10
11.500.1
24.000.1
+0.3
10
B 3302 1001 130.2
16.000.1
80
60
40
20
22 120
Pull out direction
VR
A suffix "VR" is added to Part No. for tape packaging.
R TYPE
L TYPE
16.000.1 10.800.1
8
8
1.500.25 0.400.05
25.51 29.51
R135
90.5
750 pcs.
20.5
7 0.5
per reel
210.8
130.5
The label showing the product name, quantity and production lot is attached to the reel.
5 0.
13
0 .2
132
LEDs
3-1. Uni-Color LED Lamps 3-2. Bi-Color LED Lamps 3-3. Surface Mount LEDs 3-4. Infrared LEDs
..............
134
..................
137
..................
138
.....................................
140
3-5. Ultraviolet LEDs ............................... 141 3-6. Multi-chip Modules

.....................
142
133
General-purpose LEDs
Uni-Color LED Lamps

Parameter PD IF I F I FP VR Top Tstg Unit mW mA mA /C mA V C C 3 30 to +85 30 to +100 100 5 30 to +80 GaP GaAsP 75 30 0.45 70 Above 25C f=1kHz, tw=100s Ratings GaA As A GaInP InGaN 120 GaN (Ta=25C) Conditions
Outline
Emitting color
Part No.
Lens color typ

Diffused red Diffused white Tinted red Diffused white Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Diffused yellow Tinted yellow Diffused green Tinted green Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Tinted yellow Diffused green Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted red Diffused red Tinted orange Diffused orange Tinted orange Tinted green Diffused green Clear Clear Clear Clear Clear Tinted green Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow
VF (V) max
2.5
Deep red
High-intensity red Red Amber Orange Yellow Green Pure green Red Amber Orange Yellow Green Pure green
Ultra high-intensity red Ultra high-intensity orange Ultra high-intensity pure green Ultra high-intensity blue Ultra high-intensity blue Ultra high-intensity red
5 Round
Red Amber Orange Green Pure green

Ultra high-intensity pure green Ultra high-intensity blue High-intensity red
4.65.6 Egg-shaped
Ultra high-intensity red
Green
Deep red Red
4 Round
Amber Orange Yellow
SEL1110R SEL1110W SEL1110S SEL1610W SEL1610C SEL1210R SEL1210S SEL1810D SEL1810A SEL1910D SEL1910A SEL1710Y SEL1710K SEL1410G SEL1410E SEL1510C SEL1210RM SEL1210SM SEL1810DM SEL1810AM SEL1910DM SEL1910AM SEL1710KM SEL1410GM SEL1410EM SEL1510CM SELU1210CXM SELU1910CXM-S SELU1D10CXM SELU1E10CXM SELS1E10CXM-M SELU1250CM SEL1250SM SEL1250RM SEL1850AM SEL1850DM SEL1950KM SEL1450EKM SEL1450GM-YG SEL1550CM SELU1D50CM SELU1E50CM SEL1615C SELU1253CMKT SEL1453CEMKT SEL4110S SEL4110R SEL4210S SEL4210R SEL4810A SEL4810D SEL4910A SEL4910D SEL4710K SEL4710Y
2.0
1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 3.3 3.3 3.7 2.0 1.9 1.9 1.9 2.0 2.0 3.3 3.3 1.75 2.0 2.0 2.0 1.9 1.9 1.9 2.0
2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.2 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5
Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition IF (mA) typ typ typ 2.8 5 2.8 625 700 4.5 250 20 642 660 300 26 20 620 630 75 18 10 605 610 37 14 10 590 587 25 22 10 571 570 65 32 20 567 560 84 20 50 559 555 36 20 620 630 75 18 10 605 610 37 19 10 590 587 34 10 65 571 570 30 20 567 560 84 20 50 559 555 20 280 625 635 20 450 589 591 20 2000 530 525 20 600 470 468 20 1000 470 468 20 900 625 635 75 20 620 630 48 90 20 605 610 60 20 96 590 587 190 20 567 560 120 20 72 559 555 20 6000 530 525 20 1850 470 468 20 170 642 660 20 200 625 635 20 140 567 560 2.4 5 625 700 1.7 30 20 620 630 17 20 10 605 610 15 26 10 590 587 16 36 10 571 570 14
Chip material
GaP
GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP InGaN InGaN InGaN A GaInP GaAsP GaAsP GaAsP GaP GaP InGaN InGaN GaA As A GaInP GaP GaP GaAsP GaAsP GaAsP GaP 7 4 2 1
134
Fig. No.
3 5 6
Contact mount
Uni-Color LED Lamps
Outline
Emitting color
Part No.
Lens color
typ
Tinted green Diffused green Clear Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Clear Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Diffused white Clear Tinted red Tinted orange Clear Clear Tinted orange Diffused white Clear Tinted yellow Diffused white Tinted green Diffused green Tinted green Clear Clear Clear Tinted red Tinted orange Clear Tinted green Clear Tinted red Diffused red Diffused white Clear Clear Tinted red Diffused red Diffused white Tinted orange Diffused orange Tinted orange
VF (V)
max 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.2 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5
Green
Ultra high-intensity green
Pure green Deep red Red
4 Round
Amber Orange Yellow Green Pure green Deep red Red Amber
Ultra high-intensity orange
Orange Yellow Green Pure green Blue

Ultra high-intensity deep red Ultra high-intensity red
Red Amber
Ultra high-intensity light amber Ultra high-intensity orange
Orange
3 Round
Ultra high-intensity yellow
Yellow Green
Ultra high-intensity green
Deep green Pure green

Ultra high-intensity pure green Ultra high-intensity blue
Red Orange Yellow Green Pure green Deep red

High-intensity red Ultra high-intensity deep red
Red
Amber
Ultra high-intensity light amber
SEL4410E SEL4410G SELU4410CKT-S SEL4510C SEL4114S SEL4114R SEL4214S SEL4214R SEL4814A SEL4814D SEL4914A SEL4914D SEL4714K SEL4714Y SEL4414E SEL4414G SEL4514C SEL6110S SEL6110R SEL6210S SEL6210R SEL6810A SEL6810D SELU6910C-S SEL6910A SEL6910D SEL6710K SEL6710Y SEL6410E SEL6410G SEL6510C SEL6510G SEL6E10C SELU6614C-S SELU6614W-S SELU6214C SEL6214S SEL6814A SELS6B14C SELU6914C-S SEL6914A SEL6914W SELU6714C SEL6714K SEL6714W SEL6414E SELU6414G-S SEL6414E-TG SEL6514C SELS6D14C SELS6E14C-M SEL6215S SEL6915A SEL6715C SEL6415E SEL6515C SEL2110S SEL2110R SEL2110W SEL2610C SELU2610C-S SEL2210S SEL2210R SEL2210W SEL2810A SEL2810D SELU2B10A-S
2.0 2.1 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 1.9 1.9 2.0 1.9 2.0 2.0 2.0 4.0 2.0 2.0 1.9 1.9 2. 2.0 1.9 2.1 2.0 2.0 2.1 2.0 2.0 3.3 3.7 1.9 1.9 2.0 2.0 2.0 2.0 1.75 2.0 1.9
1.9 2.0
2.5 2.5
Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 87 20 560 567 34 20 560 562 170 20 555 559 45 3.8 10 700 625 2.8 40 20 630 620 24 20 10 610 605 15 26 10 587 590 11 38 10 570 571 27 69 20 560 567 48 20 26 555 559 3.9 10 700 625 2.6 41 20 630 620 18 22 10 610 605 9.6 20 550 591 589 22 10 587 590 11 37 10 570 571 11 90 20 560 567 30 42 20 555 559 9.6 20 60 430 466 150 20 650 639 90 20 180 635 625 20 18 630 620 10 9.0 610 605 20 120 600 596 20 180 591 589 8.0 10 587 590 5.0 20 60 572 571 66 20 570 571 30 42 20 560 567 30 20 560 562 18 20 558 564 12 20 555 559 300 20 518 525 70 20 468 470 45 20 630 620 60 20 587 590 90 20 570 571 81 20 560 567 44 20 555 559 4 1.8 10 700 625 1.8 60 20 660 642 300 20 650 639 40 15 20 630 620 15 22 10 610 605 9.0 300 20 598 595
Chip material
GaP A GaInP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP GaP GaAsP GaAsP A GaInP GaAsP GaP GaP GaP GaN A GaInP A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP A GaInP GaP GaP InGaN InGaN GaAsP GaAsP GaP GaP GaP GaP GaA As A GaInP
10
11
12 GaAsP
GaAsP A GaInP
Fig. No.
7 8 9
Contact mount
135
Uni-Color LED Lamps
Outline
Emitting color
Part No.
Lens color
typ
Tinted orange Diffused orange Clear Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Clear Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Tinted orange Tinted light orange Tinted yellow Tinted green Tinted light green Clear Diffused white Tinted green Tinted green Clear Tinted light red Tinted red Tinted orange Tinted orange Tinted yellow Tinted green Diffused green Tinted green Clear Tinted red Clear Tinted red Clear Tinted orange Clear Tinted orange Clear Tinted green Clear Clear Clear Tinted red Tinted orange Clear Clear Tinted orange Clear Clear Tinted green Clear Clear Clear
VF (V)
max 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.8
Orange Ultra high-intensity yellow Yellow
Green
Pure green Ultra high-intensity pure green Ultra high-intensity blue
3 Round
Blue Ultra high-intensity red Red
Amber
Orange
Yellow
Green Pure green Red Amber Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity light amber
Inverted-cone typ for surface illumination
Green Deep green Pure green High-intensity red Red Amber Orange Yellow Green Pure green High-intensity red Ultra high-intensity deep red Ultra high-intensity red Red Ultra high-intensity amber
5mm Pitch lead rectangular
Amber Ultra high-intensity light amber Orange Ultra high-intensity yellow Green Pure green Blue Ultra high-intensity red Red Amber Ultra high-intensity light amber Ultra high-intensity orange
5mm Pitch lead bow-shaped
Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity blue Blue
SEL2910A SEL2910D SELU2710C SEL2710K SEL2710Y SEL2410E SEL2410G SEL2510C SEL2510G SELU2D10C SELU2E10C SEL2E10C SELU2215R-S SEL2215S SEL2215R SEL2815A SEL2815D SEL2915A SEL2915D SEL2715K SEL2715Y SEL2415E SEL2415G SEL2515C SEL1213C SEL1813A SEL1913K SEL1713K SEL1413E SEL1513E SELU6213C-S SELS6B13W SEL6413E SEL6413E-TG SEL6513C SEL2613CS-S SEL2213C SEL2813A SEL2913K SEL2713K SEL2413E SEL2413G SEL2513E SEL5620C SELU5620S-S SELU5220C-S SEL5220S SELU5820C-S SEL5820A SELU5B20C SEL5920A SELU5720C SEL5420E SEL5520C SEL5E20C SELS5223C SEL5223S SEL5823A SELS5B23C SELS5923C SEL5923A SELU5723C SEL5723C SEL5423E SEL5523C SELU5E23C SEL5E23C
1.9 2.1 2.0 2.0 2.0 3.3 3.3 4.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.75 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.1 2.0 2.0 4.0 2.0 1.9 1.9 2.0 2.0 1.9 2.1 2.0 2.0 2.0 3.3 4.0
Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 16 10 590 587 8.0 20 270 571 572 40 10 571 570 14 77 20 567 560 20 43 20 559 555 8.2 20 1200 530 525 20 400 470 468 20 60 466 430 20 380 624 632 45 20 620 630 38 80 10 605 610 60 81 10 590 587 53 130 10 571 570 110 110 20 567 560 72 20 52 559 555 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 15 571 570 20 12 567 560 20 5.0 559 555 20 30 624 632 20 60 596 600 20 14 567 560 20 6 564 558 20 5.0 559 555 20 20 642 660 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 17 571 570 14 20 567 560 12 20 5.0 559 555 20 100 642 660 20 100 639 650 20 120 624 632 20 20 620 630 20 150 605 611 20 12 605 610 20 120 596 600 20 12 590 587 20 50 571 572 20 20 567 560 20 6.0 559 555 20 10 466 430 20 100 625 635 20 25 620 630 20 35 605 610 20 135 596 600 20 145 589 591 20 35 590 587 20 155 571 572 20 60 571 570 20 40 567 560 20 13 559 555 20 180 470 468 20 20 466 430
Chip material
GaAsP A GaInP GaP GaP GaP InGaN InGaN GaN A GaInP GaAsP GaAsP GaAsP GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaA As A GaInP A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP A GaInP GaP GaP GaN A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP GaP InGaN GaN
12
13
14
15
16
17
18
136
Fig. No.
Contact mount
Bi-Color LED Lamps

Parameter PD IF I F I FP VR Top Tstg Unit mW mA mA /C mA V C C 3 30 to +85 30 to +100 GaP GaAsP 75 30 0.45 100 5 Above 25C f=1kHz, tw=100s Ratings GaA As A GaInP InGaN 120 (Ta=25C) Conditions Also applies to simultaneous lighting
Outline
Part No.
Emitting color
Deep red
Lens color
typ 2.0
Clear
VF (V)
max 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 2.5 4.0 2.5 4.0 2.5 4.0 2.5 4.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA)
15 50 6.0 20 65 90 60 60 50 60 45 60 500 400 250 150 250 700 800 2000 300 500 15 20 10 20 10 20 25 35 25 25 25 35 25 35 150 40 120 30 150 30 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 700 555 700 555 630 560 630 560 610 560 587 560 632 468 632 468 632 525 611 525 611 525 630 560 610 560 587 560 630 560 630 587 610 560 587 560 590 570 635 560 590 560 625 559 625 559 620 567 620 567 605 567 590 567 624 470 624 470 624 530 605 530 605 530 620 567 605 567 590 567 620 567 620 590 605 567 590 657 590 571 625 567 590 567
Chip material
GaP GaP GaP GaP GaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaP A GaInP InGaN A GaInP InGaN A GaInP InGaN A GaInP InGaN A GaInP InGaN AGaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaAsP GaAsP GaP GaAsP GaP A GaInP GaP A GaInP A GaInP A GaInP A GaInP
Common
SML11516C SML1516W SML1216C SML1216W SML1816W

5 Round
Pure green Deep red Diffused white Pure green Red Clear Green Red Diffused white Green Amber Diffused white Green Orange Diffused white Green Ultra high-intensity red Clear Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity pure green Ultra high-intensity amber Clear Ultra high-intensity pure green Ultra high-intensity amber Diffused white Ultra high-intensity pure green Red Clear Green Amber Clear Green Orange Clear Green Red Clear Green Red Clear Orange Amber Clear Green Orange Clear Green Ultra high-intensity orange Clear Yellow Ultra high-intensity red Clear Ultra high-intensity green Ultra high-intensity orange Clear Ultra high-intensity green
2.0 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.0 1.9 2.0 2.0 3.3 2.0 3.3 2.0 3.3 2.0 3.3 2.0 3.3 1.9 2.0 1.9 2.0 1.9 2.0 1.9 2.0 1.9 1.9 1.9 2.0 1.9 2.0 2.0 2.0 2.0 2.2 2.0 2.2
Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode 21 20 19
SML19416W SMLU12E16C SMLU12E16W SMLU12D16W SMLU18D16C SMLU18D16W-S SML72420C
3.36 Rectangular
SML78420C SML79420C SML72423C SML72923C SML78423C
3.36 Bow-shaped
SML79423C SMLS79723C SMLU72423C-S SMLU79423C-S
Fig. No.
Contact mount
137
Surface Mount LEDs

Parameter IF I F I FP VR Top Tstg Unit mA mA /C mA V C C 4 30 to +85 30 to +100 GaP GaAsP Ratings GaA As A GaInP 30 0.45 70 5 25 to +85 InGaN GaN (Ta=25C) Conditions
Above 25C f=1kHz, tw=100s
Uni-Color Surface Mount LEDs

Outline Emitting color
Red Amber Orange
Part No.
Lens color typ

Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Tinted green Clear 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 1.7 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 3.3 3.9 1.7 1.9 1.9 1.9 1.9 1.9 1.9 2.0 2.0 2.0 2.0
VF (V) max
2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.8 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5
Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) (mcd) p (nm) Condition IF (mA) typ typ typ
10 16 13 25 22 11 8.0 50 15 20 15 35 33 15 10 1.5 25 10 16 13 25 22 11 8.0 150 50 6.0 35 100 15 10 20 70 15 35 33 15 10 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 3 20 20 20 20 20 20 20 630 610 587 570 560 558 555 468 630 610 587 570 560 558 555 700 660 630 610 587 570 560 558 555 525 470 430 660 635 630 615 610 590 587 570 560 558 555 620 605 590 571 567 564 559 470 620 605 590 571 567 564 559 625 642 620 605 590 571 567 564 559 525 468 466 642 625 620 607 605 590 590 571 567 564 559
Chip material
GaAsP GaAsP GaAsP GaP GaP GaP GaP InGaN GaAsP GaAsP GaAsP GaP GaP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaP InGaN InGaN GaN GaA As A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP GaP GaP GaP GaP
Side view (flat lens type)
Yellow Green Deep green Pure green Ultra high-intensity blue Red Amber Orange Yellow Green Deep green Pure green Deep red High-intensity red Red Amber Orange
Side view (inner lens type)
31.5 (flat lens type)
Yellow Green Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue Blue High-intensity red Ultra high-intensity red Red Ultra high-intensity amber Amber Ultra high-intensity orange Orange Yellow Green Deep green Pure green
31.5 (inner lens type)
SEC4201C SEC4801C SEC4901C SEC4701C SEC4401C SEC4401E-TG SEC4501C SECU4E01C SEC4203C SEC4803C SEC4903C SEC4703C SEC4403C SEC4403E-TG SEC4503C SEC1101C SEC1601C SEC1201C SEC1801C SEC1901C SEC1701C-YG SEC1401C SEC1401E-TG SEC1501C SECU1D01C SECU1E01C SEC1E01C SEC1603C SECS1203C SEC1203C SECS1803C SEC1803C SECS1903C SEC1903C SEC1703C SEC1403C SEC1403E-TG SEC1503C
22
23
24
25
138
Fig. No.
Surface Mount LEDs
Uni-color / Bi-color Surface Mount LEDs with two elements

Outline Part No. Emitting color
Red Green Green Green High-intensity red Green Orange Green Pure green Pure green Orange Pure green High-intensity red Yellow Amber Green Pure green Pure green Orange Green High-intensity red Yellow Yellow Yellow
Lens color
typ 1.9 2.0 2.0 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 1.7 2.0 2.0 2.0
VF (V)
max 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5
SEC2422C SEC2442C SEC2462C

32.5 (flat lens type)
Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear
Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA) 20 10 620 630
20 20 20 20 20 10 20 5.0 5.0 10 5.0 20 20 20 30 10 10 20 30 50 50 50 50 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 560 560 560 660 560 587 560 555 555 587 555 660 570 610 560 555 555 587 560 660 570 570 570 567 567 567 642 567 590 567 559 559 590 559 642 571 605 567 559 559 590 567 642 571 571 571
Chip material
GaAsP GaP GaP GaP GaA As GaP GaAsP GaP GaP GaP GaAsP GaP GaA As GaP GaAsP GaP GaP GaP GaAsP GaP GaA As GaP GaP GaP
SEC2492C SEC2552C SEC2592C SEC2762C-YG SEC2484C SEC2554C
26
32.5 (inner lens type)
SEC2494C SEC2764C SEC2774C
27
Fig. No.
139
Infrared LEDs
Parameter IF I F I FP VR Top Tstg Unit mA mA /C mA V C C Ratings 150 1.33 1000 5 30 to +85 30 to +100 Above 25C f=1kHz, tw=10s (Ta=25C) Conditions
Infrared LEDs
Outline Part No. Lens color
typ Clear Clear Clear Clear Clear Clear
Transparent light purple Transparent light navy blue Transparent dark navy blue
VF (V)
1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.5 1.5 1.3 1.3 1.5
Electro-optical characteristics (Ta=25C) Radiant intensity Ie Peak wavelength p (nm) (mW/sr) Condition max typ typ
1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.8 1.8 1.5 1.5 1.8 130 200 80 110 250 80 130 180 200 50 50 7 14 3 IF=50mA (Constant voltage) Vcc=3V, R=2.2 940 940 940 940 940 940 940 940 940 850 850 940 940 850
Chip material
GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaA As
5 Round
3 Round 3 1.5 (inner lens type) chip
SID1010CM SID1K10CM SID1010CXM SID1K10CXM SID1050CM SID303C SID313BP SID1003BQ SID307BR SID1G307C SID1G313C SID2010C SID2K10C SEC1G03C
Contact mount
28
29
30
Clear Clear Clear Clear Clear
31 25
140
Fig. No.
Ultraviolet LEDs
Parameter IF I F I FP IR Top Tstg Unit mA mA /C mA mA C C Ratings 30 0.45 100 100 30 to +85 30 to +100 Above 25C f=1kHz, tw=10s
Max. rating of built-in Zener diode
(Ta=25C) Conditions
Ultraviolet Surface Mount LEDs

Outline Part No. Lens color
typ 2.8 3.5
VF (V)
max 4.0
IV (mcd) typ
Peak wavelength
Condition IF(mA) 20
p (nm) typ
385
Electrostatic withstand voltage
(V) typ
4000
Condition 100pF, 1.5k
Chip material
InGaN
SECU1V0AC
Clear
3.7
2.2
32
Fig. No.
Electro-optical characteristics (Ta=25C)
141
Multi-chip LED Module (under development)

Parameter IF I F I FP VR Topr Tstg Unit mA mA /C mA V C C Ratings 40 0.25 100 5 30 to +85 30 to +100 f=1kHz, tw=10s (Per element Ta=25C) Conditions
With an infinite heatsink mounted
Part No.
Colors compliant with JIS-Z9112 Cool white Natural white White Warm white Light bulb
Color temperature [K] 20mA 6400 5000 4200 3450 2875
Total flux [lm] 20mA 30 30 30 25 25
Chromaticity x, y 20mA 0.32, 0.33 0.34, 0.35 0.37, 0.37 0.41, 0.38 0.44, 0.41
Fig. No.
SEP8WD4001 SEP8WN4001 SEP8WE4001 SEP8WW4001 SEP8WL4001
33
142
General-purpose LEDs - External Dimensions

(Unit: mm)
0.65max
2-0.50.1
Fig.1
5.60.2
20.0min 5.00.5 19.0min 0.8

Cathode
7.60.2 (1.0)
5.00.2
Fig.6
Cathode (2.54)
4.70.2
Resin heap 1.5max Resin burr 0.3max 4.60.2
(2.54)
1.0min
Anode
23.5min 0.50.1 5.70.2
7.70.5
0.5
0.5
1.1max
0.8
Resin heap 1.5max
Fig.2
5.00.2 5.60.2 1.0min 23.0min Cathode (2.54) (1.0) 7.60.2
Fig.7
Cathode 2.2 (2.54) 4.8
1.0min
25.5min 6.5 0.8

0.5
5.00.2 4.00.2 3.50.1 3.10.1

3.5
1.5
0.50.1
0.65max
0.50.1
Resin heap 1.5max 0.40.1
0.450.1
Fig.3
5.00.2 5.60.2 1.0min 23.0min Cathode (2.54) (1.0) 6.90.2
Fig.8
2.2 (2.54) 4.8
1.1max
Resin heap 1.5max
1.0min
24.5min (1.5)
5.00.2 4.00.2 5.50.5 Resin heap 0.8max Resin heap 0.8max 4.4 4.4
0.50.1
0.65max
0.450.1
Resin heap 1.5max
0.40.1 Cathode
0.65max
0.50.1
Resin heap 0.8max
Fig.4
0.50.1 Anode Resin burr 0.3max 0.50.1 0.65 max Resin heap 0.8max
Fig.9
3.5 0.80.2 1.0min Cathode (2.54) 23.0min (1.7)
4.00.2
(2.54)
5.00.2
0.450.1
1.0min Cathode
21.0min
9.40.3
0.40.1
Fig.5
5.6
0.2
Fig.10
20.0min 5.5 19.0min 0.8
Cathode
0.5
8.2 (1.0)
0.2 0.2
3.5 0.8
1.0min Cathode (2.54)
23.0min 4.50.5 (1.6) 2.50.1
5.00.2
0.50.1
4.00.2
(2.54)
0.450.1
0.5
Resin heap 1.5max
0.40.1
0.65max
1.1max
0.8
0.65max
5.60.2
143
(Unit: mm)
Fig.11
0.80.2 3.5
1.0min Cathode (2.54)
3.10.1
4.00.2
3.80.1
0.450.1
(2.54)
4.4
0.450.1
0.40.1
0.65max
Resin heap 0.8max
0.4
0.4
0.1
Cathode mark
Cathode 1.0min 1.7 (2.54)
25.8min (1.3)
3.10.1
Fig.12
3.50.1
Fig.17
0.65max
Resin burr 0.3max Resin heap 1.5max
1.0min
23.0min
4.20.5
0.65max
0.50.1
Cathode 3.6
1.55 1.0min
25.4min
4.00.1 (1.3)
3.10.1
Fig.13
Fig.18
1.0min 23.0min
5.80.5 3.9 3.60.2 6.00.2
(2.54)
3.8
0.65max
0.5+0.1
Cathode 3.6
0.65max
0.40.1 Cathode
0.450.1
Resin heap 1.5max
1.4
(5.0)
6.2
Cathode mark Resin burr 0.3max Resin heap 0.8max 3.1
Fig.14
5.60.2
20.0min 5.00.5 Cathode 19.0min 0.8 (2.54)
5.80.2 (1.0)
4.90.2
Fig.19
0.5
5.80.2
0.1
1.0min 1.5min 17.0min 2.0

(2.54) (2.54)
0.5
0.50.1
10.60.5 1.0 7.60.2

5.00.2
0.50.1
1.1max
0.65max
0.5
Resin heap 1.5max
3 0.50.1
Resin burr 0.3max Resin heap 1.5max 1.2 0.8
0.8
Fig.15
3.5
1.0min
23.0min
4.5 (1.7) 2.50.1

3.50.1
Fig.20
1.0min 1.5min
(2.54) (2.54)
20.0min
3.9
0.2
0.80.2
0.40.1 0.450.1
0.65max
0.65max
0.50.1
0.5+0.1
Cathode
3.6
144
3.3
6.00.2
(2.54)
4.4
4.0
6.2
3.30.2
0.50.1
0.65max
0.4
0.450.1
Resin heap 1.5max
1.4
Cathode mark Resin burr 0.3max Resin heap 0.8max
6.00.2
3.8
(5.0)
6.2
3.10.1
23.0min (1.7) Resin burr 0.3max
5.5 3.50.1
Fig.16
Cathode 1.0min 1.7 25.8min (1.3)
2.60.1
(Unit: mm)
Fig.21
1.0min 1.5min 20.0min

(2.54) (2.54)
5.80.5 3.9 3.60.2 6.00.2
Fig.26
2.5 1.5
1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode

1.0
0.9
6.2
3.0
2.0
1.5
0.50.1
0.65max
3.6 0.50.1
Resin burr 0.3max Resin heap 1.5max 3.10.2
Anode Resin
B A
Fig.22 SEC4001
Cathode mark 1.0 P.C.B. Resin Cathode MAX 0.1
Fig.27
(1.6) 2.5 3.0 2.0 1.5 2.5 1.5
1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode

1.0
1.0
P.C.B.
0.9
(0.6)
3.0
2.0
1.5
1.5 4-R0.35
0.9 1.4
0.1
(0.5) Anode Electrode burr
Lens 0.8 1.8 Resin
Anode P.C.B.
Fig.23 SEC4003
1.5 Cathode mark 1.4 0.9
0.1
(0.5)
1.3
Cathode Electrode burr MAX 0.1 0.45
2.53
2.0 1.7 1.0
3.0
1.6
0.6
Fig.28
Cathode
Lens
P.C.B.
Anode 0.50.1
(2.54)
1.03
Resin
0.50.1
0.65max
1.5
Cathode mark
0.9
(0.5) Cathode
0.6
1.3
Dimension A (mm) SID1010CM 7.60.2 SID1K10CM SID1010CXM 6.90.2 SID1K10CXM
3.0
2.0
1.5
P.C.B. Resin Anode
1.6
Fig.29
0.50.1 1.0min Anode 21.0min 0.50.1
0.65 max
0.50.1
Fig.24
1.4
9.40.3
Fig.25
1.5 Cathode mark 1.4 0.9 Cathode (0.5)
0.6
1.3
(2.54)
5.00.2
5.00.2
5.60.2
1.0min
23.0min
1.0
(1.0)
3.0
2.0
1.7
1.0
Cathode
1.6
Lens
Resin
P.C.B. Anode
0.50.1
145
(Unit: mm)
Fig.30
2.0min 5.6 (2.54) 24.0min
Anode
Fig.32
8.50.5 A (0.8)
4.80.2
Surface
3.5 3.2 (2.7)
Side view
1.4 0.2
1.1max 0.85+0.1
0.60.1
Cathode
2.8 (2.4)
0.60.1
Cathode Mark
0.60.1
Side view
Dimension A (mm)
SID303C SID313BP SID1003BQ SID307BR SID1G307C 3.00.5 3.60.5 4.20.5
2.6 Anode
Reverse Side
0.8
Inner circuit ZD LED

Cathode
Anode
Cathode
Fig.31
3.10.1 Cathode 1.7 (2.54)
3.8
Fig.33
1.0min 25.8min (1.3) 3.5
0.1
10.0
16 15 14 13
Resin: color White

13.2 12.0
12 11 10 9
3.5
0.450.1
0.65max
Resin heap 1.5max
Heatsink
2.0
1 2 3 4 5 6 7 8
Resin
0.2 0.05 (0.5)
0.40.1
Mark
0.3 0.05
3.00.25
P1.0*3=3.0 0.25
146
(0.7)
0.4
Resin burr 0.3max
(0.8)
8.8 0.3
4.4
5.8
4.8
Part No.
Description
Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Power transistor Power transistor Power transistor Ultrafast Recovery Diode (Surface Mount) Ultrafast Recovery Diode (Surface Mount) Power Zener Diode (Surface Mount) Power transistor Array (Surface Mount) Power transistor Array (Surface Mount) Power transistor Array (Surface Mount) High-side Power Switch IC MOS FET Array ( Surface mount ) MOS FET Array ( Surface mount ) MOS FET Array ( Surface mount ) 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED
Page
Part No.
Description
3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED
Page
Part No.
Description
5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Narrow-directivity LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Inverted-cone LED for Surface illumination 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED
Page
2SA1488/A 2SA1567 2SA1568 2SA1908 2SB1622 2SC3852 2SC4024 2SC4065 2SC4153 2SD2141 2SD2382 2SD2633 2SK3710 2SK3711 2SK3724 2SK3800 2SK3801 2SK3803 2SK3851 FKV460S FKV660S FP812 MN611S MN638S MP2-202S MPL-102S PZ628 SDA03 SDA04 SDC09 SDH04 SDK06 SDK08 SDK09 SEC1101C SEC1201C SEC1203C SEC1401C SEC1401E-TG SEC1403C SEC1403E-TG SEC1501C SEC1503C SEC1601C SEC1603C SEC1703C SEC1801C SEC1803C SEC1901C SEC1903C SEC1E01C SEC1G03C
80 81 82 83 84 85 86 87 88 89 90 91 108 109 110 111 112 113 114 115 116 92 93 94 130 130 129 96 97 98 24 117 118 119 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 140
SEC2422C SEC2442C SEC2462C SEC2484C SEC2492C SEC2494C SEC2552C SEC2554C SEC2592C SEC2764C SEC2774C SEC4201C SEC4203C SEC4401C SEC4401E-TG SEC4403C SEC4403E-TG SEC4501C SEC4503C SEC4701C SEC4703C SEC4801C SEC4803C SEC4901C SEC4903C SECS1203C SECS1803C SECS1903C SECU1D01C SECU1E01C SECU1V0AC SECU4E01C SEL1110R SEL1110S SEL1110W SEL1210R SEL1210RM SEL1210S SEL1210SM SEL1213C SEL1250RM SEL1250SM SEL1410E SEL1410EM SEL1410G SEL1410GM SEL1413E SEL1450EKM SEL1450GM-YG SEL1453CEMKT SEL1510C SEL1510CM
139 139 139 139 139 139 139 139 139 139 139 139 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 141 138 134 134 134 134 134 134 134 136 134 134 134 134 134 134 136 134 134 134 134 134
SEL1513E SEL1550CM SEL1610C SEL1610W SEL1615C SEL1710K SEL1710KM SEL1710Y SEL1713K SEL1810A SEL1810AM SEL1810D SEL1810DM SEL1813A SEL1850AM SEL1850DM SEL1910A SEL1910AM SEL1910D SEL1910DM SEL1913K SEL1950KM SEL2110R SEL2110S SEL2110W SEL2210R SEL2210S SEL2210W SEL2213C SEL2215R SEL2215S SEL2410E SEL2410G SEL2413E SEL2413G SEL2415E SEL2415G SEL2510C SEL2510G SEL2513E SEL2515C SEL2610C SEL2613CS-S SEL2710K SEL2710Y SEL2713K SEL2715K SEL2715Y SEL2810A SEL2810D SEL2813A SEL2815A SEL2815D
136 134 134 134 134 134 134 134 136 134 134 134 134 136 134 134 134 134 134 134 136 134 135 135 135 135 135 135 136 136 136 136 136 136 136 136 136 136 136 136 136 135 136 136 136 136 136 136 135 135 136 136 136
SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 2.8 x 3.5 Ultraviolet Surface Mount LED Side-view Surface Mount LED 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 4.6 x 5.6 Egg-shaped LED 5 Round Standard LED (With Stopper) 5 Round Standard LED
SEC1701C-YG 3 x 1.5 Surface Mount LED

3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Infrared Surface Mount Inner Lens Type LED
147
Part No.
Description
3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported
Page
Part No.
Description
3 Round Type LED, Direct mount supported
Page
Part No.
Description
Page
SEL2910A SEL2910D SEL2913K SEL2915A SEL2915D SEL2E10C SEL4110R SEL4110S SEL4114R SEL4114S SEL4210R SEL4210S SEL4214R SEL4214S SEL4410E SEL4410G SEL4414E SEL4414G SEL4510C SEL4514C SEL4710K SEL4710Y SEL4714K SEL4714Y SEL4810A SEL4810D SEL4814A SEL4814D SEL4910A SEL4910D SEL4914A SEL4914D SEL5220S SEL5223S SEL5420E SEL5423E SEL5520C SEL5523C SEL5620C SEL5723C SEL5820A SEL5823A SEL5920A SEL5923A SEL5E20C SEL5E23C SEL6110R SEL6110S SEL6210R SEL6210S SEL6214S SEL6215S SEL6410E
136 136 136 136 136 136 134 134 135 135 134 134 135 135 135 135 135 135 135 135 134 134 135 135 134 134 135 135 134 134 135 135 136 136 136 136 136 136 136 136 136 136 136 136 136 136 135 135 135 135 135 135 135
SEL6410G SEL6413E SEL6413E-TG SEL6414E SEL6414E-TG SEL6415E SEL6510C SEL6510G SEL6513C SEL6514C SEL6515C SEL6710K SEL6710Y SEL6714K SEL6714W SEL6715C SEL6810A SEL6810D SEL6814A SEL6910A SEL6910D SEL6914A SEL6914W SEL6915A SEL6E10C SELS1E10CXM-M SELS5223C SELS5923C SELS5B23C SELS6B13W SELS6B14C SELS6D14C SELS6E14C-M SELU1210CXM SELU1250CM SELU1253CMKT SELU1D10CXM SELU1D50CM SELU1E10CXM SELU1E50CM SELU2215R-S SELU2610C-S SELU2710C SELU2B10A-S SELU2D10C SELU2E10C SELU4410CKT-S SELU5220C-S SELU5620S-S SELU5720C SELU5723C SELU5820C-S
135 136 136 135 135 135 135 135 136 135 135 135 135 135 135 135 135 135 135 135 135 135 135 135 135 134 136 136 136 136 135 135 135 134 134 134 134 134 134 134 134 136 135 136 135 136 136 135 136 136 136 136 136
3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 5 Round Wide-directivity LED 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 4.6 x 5.6 Egg-shaped LED
Pitch Lead Rectangular LED, SELU5B20C 5mm Direct mount supported Pitch Lead Bow-shaped LED, SELU5E23C 5mm Direct mount supported 3 Inverted-cone LED for Surface illumination, SELU6213C-S Direct mount supported Round Type Wide-directivity LED, SELU6214C 3 Direct mount supported 3 Round Type Wide-directivity LED, SELU6414G-S Direct mount supported Round Type Wide-directivity LED, SELU6614C-S 3 Direct mount supported 3 Round Type Wide-directivity LED, SELU6614W-S Direct mount supported Round Type Wide-directivity LED, SELU6714C 3 Direct mount supported
136 136 136 135 135 135 135 135 135 135 142 142 142 142 142 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 129 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127
SELU6910C-S SELU6914C-S SEP8WD4001 SEP8WE4001 SEP8WL4001 SEP8WN4001 SEP8WW4001 SFPB-54 SFPB-56 SFPB-59 SFPB-64 SFPB-66 SFPB-69 SFPB-74 SFPB-76 SFPE-64 SFPJ-53 SFPJ-63 SFPJ-73 SFPL-52 SFPL-62 SFPL-64 SFPM-52 SFPM-54 SFPM-62 SFPM-64 SFPW-56 SFPZ-68 SG-9CNR SG-9CNS SG-9CZR SG-9CZS SG-9LCNR SG-9LCNS SG-9LLCNR SG-9LLCNS SG-9LLCZR SG-9LLCZS SG-10LLR SG-10LLS SG-10LLXR SG-10LLXS SG-10LLZ23R SG-10LLZ23S SG-10LR
3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Power Zener Diode Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator
SELU1910CXM-S 5 Round Wide-directivity LED

5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 4 Round Type LED 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported
148
Part No.
Description
Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator High-Voltage Rectifier Diode for Ignition Coil High-Voltage Rectifier Diode for Ignition Coil High-Voltage Rectifier Diode for Ignition Coil Linear Regulator IC Linear Regulator IC Linear Regulator IC Linear Regulator IC Switching Regulator IC System Regulator IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Full-bridge Motor Driver IC 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED, Direct mount supported 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 3 Round Infrade LED 3 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) High Voltage Driver IC for HID Lamps High Voltage Driver IC for HID Lamps High-side Power Switch IC High-side Power Switch IC Stepper-motor Driver IC MOS FET Array MOS FET Array Power transistor Array High Voltage Driver IC for HID Lamps MOS FET Array 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED
Page
Part No.
Description
5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED
Page
SG-10LS SG-10LXR SG-10LXS SG-10LZ23R SG-10LZ23S SG-14LXZS SG-14LXZS SHV-01JN SHV-05J SHV-06JN SI-3001S SI-3003S SI-3101S SI-3102S SI-3201S SI-3322S SI-5151S SI-5152S SI-5153S SI-5154S SI-5155S SI-5300 SID1003BQ SID1010CM SID1010CXM SID1050CM SID1G307C SID1G313C SID1K10CM SID1K10CXM SID2010C SID2K10C SID303C SID307BR SID313BP SJPZ-E18 SJPZ-E27 SJPZ-E33 SJPZ-E36 SJPZ-K28 SLA2402M SLA2403M SLA2501M SLA2502M SLA4708M SLA5027 SLA5098 SLA8004 SMA2409M SMA5113 SML11516C SML1216C SML1216W
127 127 127 127 127 127 127 128 128 128 8 10 12 14 22 16 26 28 30 32 34 60 140 140 140 140 140 140 140 140 140 140 140 140 140 129 129 129 129 129 64 68 36 38 56 120 121 99 72 122 137 137 137
SML1516W SML1816W SML19416W SML72420C SML72423C SML72923C SML78420C SML78423C SML79420C SML79423C SMLS79723C SMLU12E16C SMLU12E16W SMLU18D16C SMLU18D16W-S SMLU72423C-S SMLU79423C-S SPF0001 SPF3004 SPF3006 SPF5002A SPF5003 SPF5004 SPF5007 SPF5009 SPF5012 SPF5017 SPF5018 SPF7211 SPF7301 SSD103 STA315A STA335A STA415A STA460C STA461C STA463C STA464C STA508A STA509A SZ-10N27 SZ-10N40 SZ-10NN27 SZ-10NN40 TFC561D TFC562D
137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 100 18 20 50 40 42 44 52 54 46 48 58 62 95 101 102 103 104 105 106 107 123 124 129 129 129 129 125 126
SMLU12D16W 5 Round Standard Bicolor LED

5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED Power transistor Array (Surface Mount) System Regulator IC System Regulator IC Low-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Low-side Power Switch IC Low-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Stepper-motor Driver IC Full-bridge Motor Driver IC Power transistor Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array MOS FET Array MOS FET Array Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition
149
http://www.sanken-ele.co.jp SANKEN ELECTRIC CO.,LTD.

1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
ISO 9001/14001 Certified
Sanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards.
I Products: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments
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Allegro MicroSystems, Inc.
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Europe
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Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
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SANKEN ELECTRIC CO.,LTD.

Dropper Type Regulator ICs

2-1-2. Transistor Arrays

2-2-2. MOS FET Arrays

..................................................... 129 ............................................ 130

3-4. Infrared LEDs .................................................................................. 140

3-6. Multi-chip Modules

Part Number Index in Alphanumeric Order

Examples of Use of Typical Products by Application

With integrated back emf. clamp diode.

ICs Regulator Custom-made (contact our sales reps.)

SLA2402M / SLA2403M / SMA2409M

2SD2141 / MN638S ICs Ignition Custom-made (contact our sales reps.)

Multi-chip LED modules (p.142)

Various LEDs (p.133)

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851

ABS and VDC

Integral current detection resistor, current monitor output, surface-mount and

1-3. Motor Driver ICs

Dropper Type Regulator ICs

..................................... .................................... ..................................... .....................................

1-4. HID Lamp Driver ICs

1-5. Custom ICs 1-2. Power Switch ICs

SPF5002A (Surface-mount 4-circuits)

Application Note for Regulator ICs

Setting DC Input Voltage

Power Dissipation (PD)

Recommended silicone grease

VO : Output voltage VIN : Input voltage IO : Output current

: Efficiency VF : Diode forward voltage

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

2.6 0.1 (2.0)

0.950.15 (4.6) 0.85 0.1

Symbol VIN VC IO PD1 PD2

0.45 P1.70.7 4=6.80.7

18 1.5 40 to +125 40 to +100 40 to +125 5.5

With infinite heatsink Stand-alone without heatsink

1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN

a: Part No. b: Lot No.

(Forming No. 1101)

Stand-alone without heatsink

Equivalent Circuit Diagram

Absolute Maximum Ratings

External Dimensions (unit: mm)

( Tj= 25C, VIN =14V unless otherwise specified)

Symbol VIN VO VDIF

5.10 0.5 1.0

VO LINE VO LOAD VO /T RREJ Iq I S1 VC, IH VC, IL I C, IH I C, IL

e : Drive circuit f : Error amplifier g : Reference voltage

Standard Circuit Diagram

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Dropout voltage VDIF (V)

Output voltage VO (V)

IO = 0 (A) 0.4 (A) 1.0 (A)

Input voltage VIN (V)

Output Voltage Temperature Characteristics

Quiescent Circuit Current

Output voltage VO (V)

Ambient temperature Ta (C)

ON/OFF Control Characteristics

Overcurrent Protection Characteristics

Thermal Protection Characteristics