www.fairchildsemi.

com

KA5M0965Q

Fairchild Power Switch(FPS)

Features
Precision Fixed Operating Frequency (70kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Load Protection Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Latch Mode

Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and PWM controller or RCC solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter.
TO-3P-5L

1. DRAIN 2. GND 3. VCC 4. FB 5. S/S

Internal Block Diagram

Vcc 3
+
27V

Drain 1
UVLO INTERNAL BIAS Good Logic
CLK

OVP OVP-out
V CC V REF 5uA 15V/9V 1mA

Vref

VOLTAGE Sense LIMIT CIRCUIT FET

OSC

Feedback 4 Soft Start 5

+
7.5V 5V O LP

1 4V 2.5R

S + LEB R

TSD (TJ =150) OVP-out (VCC =27V) OCL (VS=1.4V)

VO F F S E T

VS Rsense Q
LEB : Leading Edge Blanking OCL : Over Current Limit

S Power-on Reset /Auto-restart R

2 GND

Shutdown Latch

Rev.1.0.3
2003 Fairchild Semiconductor Corporation

KA5M0965Q

Absolute Maximum Ratings

Characteristic Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (2) Single Pulsed Avalanche Energy (3) Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Ambient Temperature Storage Temperature Symbol VDGR VGS IDM EAS ID ID VCC,MAX VFB PD (watt H/S) Darting TA TSTG Value 650 30 36.0 950 9.0 5.8 30 -0.3 to VSD 170 1.33 -25 to +85 -55 to +150 Unit V V ADC mJ ADC ADC V V W W/C C C

Note: 1. Tj = 25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 20mH, VDD = 50V, RG = 27, starting Tj = 25C

KA5M0965Q

Electrical Characteristics (SFET Part)

(Ta = 25C unless otherwise specified) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R

Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Test condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=4.5A VDS=50V, ID=4.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.8BVDSS

Min. 650 5.0 -

Typ. 0.96 1200 135 25 25 75 130 70 45 8 22

Max. 50 200 1.2 60 160 270 150 60 -

Unit V A mA W S pF

nS

nC

KA5M0965Q

Electrical Characteristics (Control Part) (Continued)

(Ta = 25C unless otherwise specified) Characteristic Symbol UVLO SECTION Start Threshold Voltage VSTART Stop Threshold Voltage VSTOP OSCILLATOR SECTION Initial Accuracy FOSC (2) Frequency Change With Temperature Maximum Duty Cycle Dmax FEEDBACK SECTION Feedback Source Current IFB Shutdown Feedback Voltage VSD Shutdown Delay Current Idelay SOFT START SECTION Soft Start Voltage VSS Soft Start Current ISS CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER PROTECTION SECTION TSD Thermal Shutdown Temperature (Tj) (1) Over Voltage Protection Voltage VOVP TOTAL DEVICE SECTION Start-up Current ISTART Operating Supply Current (Control Part Only) IOP Test condition After turn on Ta=25C -25C Ta +85C Ta=25C, 0V Vfb 3V Vfb 6.5V Ta=25C, 5V Vfb VSD VFB = 2V Sync & S/S=GND Max. inductor current VCC 24V VCC=14V VCC 28 Min. Typ. Max. 14 8.4 61 74 0.7 6.9 4 4.7 0.8 15 9 67 5 77 0.9 7.5 5 5.0 1.0 16 9.6 73 10 80 1.1 8.1 6 5.3 1.2 Unit V V kHz % % mA V A V mA A C V mA mA

5.28 6.00 6.72 140 25 160 27 0.1 7 29 0.17 12

Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 3. These parameters are indicated Inductor current.

KA5M0965Q

Typical Performance Characteristics

Top :
1

ID , Drain Current [A]

ID , Drain Current [A]

10

Bottom :

VGS 15 V 10 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V

10

150 25 10
0

10

-55

10

-1

Note : 1. 250 s Pulse Test 2. TC = 25

-1

Note 1. VDS = 50V 2. 250 s Pulse Test

10

10

10

10

-1

10

VDS , Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. Output Characteristics

1.3

Figure 2. Thansfer Characteristics

IDR , Reverse Drain Current [A]

RDS(on) , [] Drain-Source On-Resistance

1.2 VGS = 10V 1.1 VGS = 20V 1.0

10

10

0.9

150

25

Note : 1. VGS = 0V 2. 250 s Pulse Test

0.8

10

12

14

16

10

-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

3000

2500

C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd

12

VGS, Gate-Source Voltage [V]

10

V DS = 120V VDS = 300V VDS = 480V

Capacitances [pF]

2000

Ciss

1500

Coss

1000

Crss

Note ; 1. V GS = 0 V 2. f = 1 MHz

500

2
Note : ID = 8.5 A

0 -1 10

10

10

10

15

20

25

30

35

40

45

VDS, Drain-Source Voltage [V]

Q G, Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5M0965Q

Typical Performance Characteristics (Continued)

1.2

3.0

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON), (Normalized) Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0

0.9

Note : 1. VGS = 0 V 2. ID = 250 A

0.5

Note : 1. VGS = 10 V 2. ID = 6.0 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

10
10
2

Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

10

1 ms 10 ms DC

ID, Drain Current [A]

3

10 s 100 s

10

Notes :

1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o

10

-1

10

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

10

D = 0 .5

Z JC(t), Thermal Response

0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1

10

-2

s in g le p u ls e

N o te s : 1 . Z JC(t) = 0 .7 5 /W M a x . 2 . D u ty F a c to r, D = t1/t2 3 . T JM - T C = P D M * Z JC(t)

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Thermal Response

KA5M0965Q

Typical Performance Characteristics (Control part) (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25

Fig.1 Operating Frequency

25

50

75

100 125 150

1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25

Fig.2 Feedback Source Current

25

50

75

100

125 150

Figure 1. Operating Frequency

Figure 2. Feedback Source Current

1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25

Fig.3 Operating Current

1.1 1.05

Fig.4 Max Inductor Current

Iover 1 Ipeak
0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150

Figure 3. Operating Supply Current

Figure 4. Peak Current Limit

1.5 1.3

Fig.5 Start up Current

1.15 1.1 1.05

Fig.6 Start Threshold Voltage

Istart

1.1 0.9 0.7 0.5 -25 0 25 50 75 100 125 150

Vstart 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Figure 5. Start up Current

Figure 6. Start Threshold Voltage

KA5M0965Q

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.15 1.1 1.05

Fig.7 Stop Threshold Voltage

1.15 1.1 1.05

Fig.8 Maximum Duty Cycle

Vstop 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Dmax 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage

Figure 8. Maximum Duty Cycle

1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25

Fig.9 Vcc Zener Voltage

1.15 1.1 1.05

Fig.10 Shutdown Feedback Voltage

Vsd 1
0.95 0.9 0.85 -25

25

50

75

100 125 150

25

50

75

100 125 150

Figure 9. VCC Zener Voltage

Figure 10. Shutdown Feedback Voltage

1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25

Fig.11 Shutdown Delay Current

1.15 1.1 1.05

Fig.12 Over Voltage Protection

Vovp 1
0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current

Figure 12. Over Voltage Protection

KA5M0965Q

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.15 1.1 1.05

Fig.13 Soft Start Voltage

2.5 2 1.5
( )1 Rdson

Fig.14 Drain Source Turn-on Resistance

Vss

1 0.9

0.95 0.85 -25

0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage

Figure 14. Static Drain-Source on Resistance

KA5M0965Q

Package Dimensions

TO-3P-5L

10

KA5M0965Q

Package Dimensions (Continued)

TO-3P-5L (Forming)

11

KA5M0965Q

Ordering Information
Product Number KA5M0965QTU KA5M0965QYDTU
TU : Non Forming Type YDTU : Forming Type

Package TO-3P-5L TO-3P-5L(Forming)

Rating 650V, 9A

Operating Temperature -25C to +85C

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.