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Doping Methods
2. Diffusion
Dopants are diffused thermally into the
substrate in furnace at 950 – 1280 0C.
It is governed by Fick’s Laws of Diffusion.
2. Ion
Implantation Dopant ions bombarded into targeting
substrate by high energy.
Ion implantation are able to place any ion at
any depth in sample.
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Additive Processes
Physical Vapor Deposition (PVD)
1. Evaporation
Deposition is achieved by
evaporation or sublimation of
heated metal onto substrate.
2. Sputtering
Sputtering is achieved by
accelerated inert ion by DC drive
in plasma through potential
gradient to bombard metallic
target.
Types of CVD
LPCVD (Low Pressure CVD),
PECVD (Plasma Enhanced CVD)
Salient Features
CVD results depend on pressure, gas, and temperature
Can be diffusion or reaction limited
Varies from film composition, deposition rate and electrical and
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mechanical properties
Subtractive Processes
Dry Etching
2XeF2+Si→2Xe+SiF4
Isotropic etching (typically 1-3µm/min)
Does not attack aluminum, silicon dioxide, and silicon
nitride
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Subtractive Processes
Dry Etching
Plasma Etching
Reaction Mechanism
Produce reactive species in gas-phase Reactive species diffuse to the solid
Adsorption, and diffuse over the surface Reaction Desorption Diffusion
Wet Etching
Isotropic Wet
Etching
Isotropic etchants etch in all
directions at nearly the same
rate.
Etchants
Reaction : are generally Alkali
Hydroxides (KOH,+NaOH,
Silicon (s) + Water CeOH
Hydroxide Ions → Silicates + Hydrogen
technology
An implantable blood
pressure sensor
developed by
CardioMEMS
Introduction to Microengineering
http://www.dbanks.demon.co.uk/ueng/
MEMS Clearinghouse
http://www.memsnet.org/
MEMS Exchange
http://www.mems-exchange.org/
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