Innovative Metal System for IGBT Press Pack Modules

S. Gunturi, J. Assal, D. Schneider, S. Eicher ISPSD, April 2003, Cambridge, England

Copyright [2003] IEEE.

Reprinted from the International Symposium on Power Semiconductor Devices and ICs.

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ABB Switzerland Ltd.

Innovative Metal System for IGBT Press Pack Modules

Innovative Metal System for IGBT Press Pack Modules

*

S. Gunturi *, J. Assal #, D. Schneider #, S. Eicher # ABB Switzerland Ltd, Corporate Research, 5405 Dttwil, satish.gunturi@ch.abb.com # ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland
the chip, a metal platelet is used in contact with the silicon chip [2]. When the chip fails it dissipates, for a very short duration, a sufficiently high energy to melt the platelet and forms a stable alloy with silicon. Metals like silver and aluminium are preferred as they form low melting eutectic alloys with silicon.

Abstract. Two important design aspects encountered in IGBT press pack modules used for HVDC applications are short circuit failure mode (SCFM) and intermittent operating life (IOL) capabilities. The requirement that press-pack IGBT (PPI) fail safely into a short causes a design conflict with the modules desired capability to survive a high number of power cycles in normal operation. An innovative materials design to optimise this trade-off is described. The failure mechanism that leads to an open circuit after the PPI has operated extensively in SCFM was found to be liquid metal corrosion of the baseplate followed by the formation of intermetallics with poor conductivity and silicone gel degradation. The beneficial effects of dry interface plating materials to avoid thermomechanical fatigue under IOL conditions are described. INTRODUCTION

Figure 1. IGBT press pack module composed of four submodules.

(a)

IGBT press pack modules with high blocking voltages up to 10 kV are offering new possibilities in power systems applications, e.g. HVDC transmission and power quality management, as well as in drive and traction applications. High flexibility and easy handling are obtained by a non-hermetic, modular design, in which each silicon (Si) chip is pressed by an individual contact spring [1], see also figure 1. These modules are currently used successfully in HVDC transmission systems with a power ranging up to 300 MW. This translates into operating junction temperatures of up to 125C and temperature cycles of up to 100C. Therefore, the capability in intermittent operating life (IOL) i.e. power cycling is crucial for the reliable operation of the modules. In HVDC applications, dozens of modules are connected in series to block dc-link voltages of up to 100 kV. To prevent shut down of the system due to a defect arising in a module, redundant modules are included in the system, such that the surviving modules share the voltage and the failed module is still able to carry the load current. Accordingly, a stable short circuit condition through the failed module must be formed and guaranteed until the system is serviced. This so-called short circuit failure mode (SCFM) has an important consequence on the press pack design. A single failed chip and its contact system, which is illustrated in figure 2a, take up the whole module current of up to 1500 A (phase-rms). To reduce the resistance of the failure path through

pin

platelet silicone gel Si chip base plate

solder material

(b)
1000 N gate pad IGBTs emitter surface

platelet

thermal expansion

Si chip
thermal expansion current flow

Figure 2. (a) Design of the contacted Si-chip. (b) Emitter interface of the Si-chip. Unfortunately Ag and Al have high coefficients of thermal expansion (CTE = 19 and 23 ppm/K, respectively) compared to Si (3 ppm/K) causing a trade-off between IOL and SCFM performance. As illustrated in figure 2b the changes in temperature, due to power cycling, cause relative lateral

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movements of more than 10 m at the chip to platelet interface. These cyclic motions combined with high current densities and high operating temperatures can damage the chip surface, thereby generating early electrical failures. EXPERIMENTAL Short circuit failure mode. The IGBT modules for testing in SCFM were initially destroyed by applying an over-voltage to form the short circuit in one of the Si chips. Thereafter they were subjected to high currents in the range of 1000-1500 A and load cycling to accelerate the degradation of the contact system. The voltage drop across the module was recorded as a function of time. Specially built modules were also tested to monitor the voltage drop across the various materials interfaces. Tests were interrupted at various stages of the degradation process. In order to identify the aging mechanisms, the samples were sectioned and prepared for metallurgical analysis by grinding and polishing to reveal the alloying zone as shown in figure 3. Samples were analysed using optical, scanning acoustic microscopy, scanning electron microscopy aided by EDX for chemical composition analysis and micro hardness testing techniques to determine the mechanisms leading to the failure by opening up of the short circuit. Intermittent Operating Lifetime. In order to simulate the operating conditions, power cycling was tested on the modules as shown in figure 1. An applied DC current between 1500 A and 1700 A was switched on and off every 30 through the stacks composed alternatively of modules and coolers. The contact resistances of the complete module and of the interface between the metallization of the emitter side of the chip and the contact platelet were previously measured, to ensure a controlled T (typically of 40C and 80C) between the switching on and off cycle periods. During the test the collector-emitter voltage of each module was measured regularly and, in case of a failure, by-passed. Every 10000 cycles, the test was stopped, the stacks were dismantled and every device was electrically tested (gate-emitter and collector-emitter leakage currents, and gate-emitter threshold voltage). Failed modules were replaced by new ones, stacks were remounted and the test was started again. The interfaces at the emitter surface of the chips and the platelets, as well as the nature of the failures were analyzed using optical microscopy and scanning electron microscopy (SEM) with chemical composition analysis capability (EDX). RESULTS & DISCUSSION Short circuit failure mode. Statistical modelling activities [3] and the available results from the field confirm that the IGBT modules meet the required number of operating hours. However, experiments

under accelerated conditions were performed to study the possible failure mechanisms after long term operation. Two modes which result in the undesired opening up of the short circuit were identified, firstly a failure in the alloying zone and secondly a degradation of the dry interfaces due to the the silicone gel creeping into them. These results are discussed below.

Si - chip Al-plate

Pb-solder Mo-baseplate

Figure 3. Alloying zone. The microstructure of a typical cross section through the alloying zone during the early stages of operation in SCFM is shown in figure 3. It revealed predominantly, the formation of a hemispherical AlSi alloy above the Mo baseplate and in the Al-Si interface. Compositional analysis by EDX in the SEM confirmed that this alloy had the composition ranging from 8 to 25 wt. % Si (either side of the eutectic composition of 12.7 wt. % Si in Al) in various regions of the alloying zone. A low Si content in the alloy would be preferable as otherwise the resistivity and hence power dissipated in the alloy increase with the Si content resulting in rapid degradation of the materials. Spherical chunks of Pb from the solder alloy (joining the chip to the base plate) were found embedded in this alloy, as Pb is insoluble in Al. Further, away from the Al-Si interface, platelets of primary Si, that did not melt were embedded in a matrix of Al. Although platelets of Si were present they do not lead to the immediate destruction of the current conducting path, but only contribute to the higher voltages observed during the early stages of the test and dissolve during subsequent melting and spreading of the alloy with time. Small volume fractions of Ni-Al intermetallic needles and platelets were also observed in the Al-Si alloy. They are formed from the interaction of the Ni plating on the Al platelet and Mo baseplate used to facilitate adequate solderability of the Si chip. Ni-Al intermetallics in general possess poor conductivities, but were not formed in significant volume fractions to affect the conductivity of the alloy. During the early stages of operation the top surface of the Mo baseplate displayed regions in which the Al-Si alloy penetrated into the Mo baseplate. However at that early stage, there was still a good contact between the baseplate and the Al-Si alloy.

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At a later stage in testing, examination of the SiMo interface in samples that were interrupted after longer operation but prior to failure, in the SEM revealed a number of long cracks branching in all directions in the Mo plate (figure 4). These cracks were formed due to the liquid Al (from the Al-Si alloy) corroding the Mo grain boundaries. The corroded grains were then drawn into the Al-Si alloy. Over long periods of operation, diffusion of Si and Al occurs into the Mo particles forming various intermetallics (eg. Mo(Si, Al)2, Al4Mo etc), figure 5, some of which are predicted by the phase diagrams. Their volume fraction increased with time and a majority of the alloy was observed to be composed of the intermetallics (supported by the microhardness measurement profiles) close to failure. The inherently high resistivity of intermetallics (MoSi2 has a resistivity that is one order higher than pure metals) along with the cracking in the baseplate increase the resistance to current flow and increase the ohmic heat that is dissipated in the Si-Mo interface. Such increase in heat causes further deterioration of the baseplate and finally failure by oxidation of the alloy. Liquid metal corrosion of Mo [4] and formation of various intermetallics [5] were reported earlier.

during SCFM (when high temperatures are generated in the dry contacts) (figure 6) resulted in the embrittlement of the gel and the formation of hard silica (SiO2) due to oxidation of the methyl groups in polydimethylsiloxane, which starts in air at temperatures >180C. Aging experiments on the gel in the temperature range of 200-275C confirmed the formation of SiO2. Formation of hard layers of silica from the soft silicone gel that creeps into the interfaces prevents further electrical contact points from being established after the initial contact points have deteriorated by aging/oxidation leading to higher power dissipation and failure of the contact by creep in the press-pin and oxidation.
pin foot

Ag-plating

gel Ag-plating

Figure 6. Silicone gel (dark) in a dry interface between two plated parts (bright). Intermittent Operating Lifetime. As mentioned above, aluminium is needed to ensure long lifetime in SCFM. Unfortunately aluminium has a high CTE (23 ppm/K) compared to that of silicon (3 ppm/K). This generates mechanical fatigue and can cause early failures under IOL. Therefore, the coating material of the platelet must be chosen carefully to meet the following requirements: (1) high electrical conductivity, (2) low coefficient of friction, (3) no oxide formation, and (4) chemically inert below 150C with the IGBT top metal or the silicone gel under the influence of humidity. In addition, the coating process must be compatible with Al bulk material and cost effective.

Figure 4. Molten Al penetrates along Mo grain boundaries.

Figure 5. Intermetallics in the alloying zone. A second mechanism which results in an open circuit is due to the silicone gel creeping in to a majority of the dry interfacial contact area after the gel potting operation during the production of modules. The presence of silicone gel in the interface

Figure 7. Failed IGBT (left) and platelet (right) after 6000 cycles in IOL T = 80C. The location of the failure is marked. Palladium coatings (Pd) fulfil all these requirements reasonably well for most applications, including HVDC. IOL experiments reveal lifetimes (expressed as 10% failure probabilities) of more than

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100000 cycles and 10000 cycles for T = 40C and 80C, respectively. The typical failures exhibit transfer and sticking of Ag from the chip metallization on to the Pd coating of the platelet by interdiffusion of Ag and Pd. Such sticking damages the emitter surface of the IGBTs, and finally causes failure of the electronic devices (figures 7 and 8).

is reduced by a factor of 10 in comparison to Al platelets. Therefore, a Mo platelet in direct contact with the chip enables excellent IOL performance for modules which are not intended for use in applications where extended SCFM life is required, e.g. traction or industrial applications. It should, however, be noted that even the construction with the Mo platelet fails safely into a short. However, such a short will not remain stable over extremely long periods as with Al or Ag platelets. CONCLUSIONS We present here a press pack IGBT module construction that fails safe into a short and is able to maintain this short for a long time. A relatively stable Al-Si alloy formed under SCFM conditions is able to carry the load current of the module stack, whose lifetime is limited by liquid Al from the Al-Si alloy corroding the Mo baseplate, thus forming cracks and various intermetallics with poor conductivity over long-term operation. When the volume fraction of the intermetallics increases to a critical level, the power dissipation and hence heat dissipated increases in the alloy leading to failure (open circuit) by oxidation. Silicone gel creeping into the dry interfaces also leads to failure by forming hard SiO2 in the contact interfaces. It has been shown that high IOL capability and good SCFM life are conflicting requirements. For HVDC stations where SCFM is necessary, Al coated with Pd is used for the contact platelet and, thus, power cycling lifetime above 100 k cycles are reached for T = 40C. In that case, failures are due to the high mismatch of the CTEs between Al and Si, and the interdiffusion process between the Ag top metal of the electronic device and the Pd coating. For applications where high IOL capability is critical and long SCFM life is not required (e.g. traction), a Mo platelet coated with Rh, is adopted. This construction exhibits superior IOL lifetime of about 1 mio cycles for T = 40C. REFERENCES

Figure 8. SEM of a Pd-coated Al-platelet (2000 cycles, T = 80C, no electrical failure). Ag particles are situated at the border of the circular marking. The structure of the IGBT emitter surface is visible. In several applications like traction, SCFM capability is not required as in HVDC. In those cases, IOL can be dramatically improved by using Mo as bulk material for the platelet. Mo, with its CTE of 5 ppm/K, is a traditional contact material for semiconductor devices. To protect it against oxidation, rhodium (Rh) is used as plating. Figure 9 shows the excellent IOL results of using a Mo platelet on an IGBT after 5000 cycles in IOL at T = 80C (the test was interrupted before failure).

Figure 9. IGBT after 5000 cycles in IOL T = 80C. The emitter surface is not damaged and the markings left by the Mo platelet are barely visible. Using contact platelets with this combination, IOL tests with T of 80C, exhibit an improved lifetime close to 100000 cycles. In our first tests we have seen a shift in the collector-emitter leakage current from the nA to the A range after approximately 100 k cycles, but no catastrophic IGBT failure occurred (chips maintained their switching capability). The root cause of this observation remains to be investigated. Mo clearly improves the IOL capability but experiments show that SCFM lifetime

[1] S. Kaufmann et al. Innovative Press Pack Modules for High Power IGBTs. Proc. 13th ISPSD 2001, Osaka, Japan (2001). pp. 59. [2] T. Lang, H. Zeller, Short-circuit resistant IGBT module, Patent number: US 6426561 B1 [3] R. Schlegel et al. Reliability of non-Hermetic Pressure Contact IGBT Modules Microelectronics Reliability, 41 (2001). pp. 1689. [4] Metals Handbook Properties and Selection: Non Ferrous Alloys and Special Purpose Materials, 10th Edn., Vol.2, ASM Intl. [5] N. Tunca, R.W. Smith Intermetallic Compound Layer Growth at the Interface of Solid Refractory Metals Molybdenum and Niobium with Molten Aluminium. Met. Trans. 20A (1989). pp. 825.

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