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RESULTS
It was found that the adatoms, which strike the film, seldom got reflected, irrespective of the striking velocity. The resputtered atoms were mostly those which were within the film surface and possessing high mechanical energy. High vertical speed of the adatoms and gas ions will have two effects on the thin film; (1) attrition due to the mechanical energy of atoms and (2) resputtering or ejection of atoms from thin film. Both the phenomena have been explored as possible causes for the formation of amorphous phase during resputtering using classical molecular dynamics (MD) simulation.
INTRODUCTION
Current intensive research demonstrated that thin films unique fine microstructure is responsible for superior shape memory characteristics in films, compared to that of bulk materials [1]. The shape memory characteristics of NiTi films depends significantly on metallurgical factors such as: alloy composition, annealing or aging temperatures; and sputtering conditions such as: target power, Ar gas pressure, plasma powers, substrate temperatures, bias voltage, etc. These films are attractive materials for microfabrication and integration in micro-miniature systems composed of mechanical elements, actuators, sensors and electronics made on one chip [2].
OBJECTIVE
The main aim of the present studies is to Understand the structural changes of NiTi thin films during sputtering and resputtering.
CONCLUSIONS
FIG 2: Snapshots showing the sputtering and resputtering process with time
The conclusions that can be drawn from the results of classical molecular dynamics simulations are: (1) Reflection and re-sputtering were observed only when the colliding velocity exceeded a critical value. (2) The critical velocity was found to decrease with increase in the density of adatoms in the plasma just above the film surface. (3.) The number of re-sputtered atoms or the atoms ejected from the interior of the film was much higher than the number of reflected atoms. The lower number of reflected atoms was attributed to the inelastic collision.
REFERENCES
[1]T. Mineta, and Y. Haga, Materials and Processes in Shape Memory Alloy, in: MEMS Materials and Processes Handbook, MEMS Reference Shelf: Springer, 1, 355-402 (2011). [2 ] R.M.S. Martins,et. al., Study of graded Ni-Ti shape memory alloy film growth on Si(100) substrate, Appl. Phys. A 91, 291299 (2008), DOI: 10.1007/s00339-008-4397-2.