2N2218A-2N2219A 2N2221A-2N2222A

HIGH SPEED SWITCHES

DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A/2N2222A approved to CECC 50002-101 available on request.
TO-39 TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C for 2N2218A and for 2N2221A and at T c as e 25 C for 2N2218A and for 2N2221A and Storage Temperature Junction Temperature 2N2219A 2N2222A 2N2219A 2N2222A Value 75 40 6 0.8 0.8 0.5 3 1.8 65 to 200 175 Unit V V V A W W W W C C 1/8

T st g Tj January 1989

2N2218A-2N2219A-2N2221A-2N2222A
THERMAL DATA
2N2218A 2N2219A R t h j -c as e R t h j- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 C/W 187.5 C/W 2N2221A 2N2222A 83.3 C/W 300 C/W

ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified)

Symbol I CBO I CE X I E BO I BEX V ( BR) V (BR) V ( BR) V CE VB E
CBO

Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V BE = 3 V) Emitter Cutoff Current (I C = 0) Base Cutoff Current (V BE = 3 V) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emittter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain

Test Conditions V CB = 60 V V CB = 60 V V CE = 60 V VE B = 3 V V CE = 60 V I C = 10 A I C = 10 mA I E = 10 A I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA T am b = 150 C

Min.

Typ.

Max. 10 10 10 10 20

Unit nA A nA nA nA V V V

75 40 6 0.3 1 0.6 1.2 2

CEO *

EBO

(s at )*

V V V V

(s at )*

h F E*

for 2N2218A and 2N2221A I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 10 mA V CE = 10 V T amb = 55 C for 2N2219A and 2N2222A I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 10 mA V CE = 10 V T amb = 55 C

20 25 35 40 25 20 15 35 50 75 100 40 50 35

120

hFE *

DC Current Gain

300

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

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2N2218A-2N2219A-2N2221A-2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol hfe Parameter Small Signal Current Gain Test Conditions I C = 1 mA f = 1 kHz for 2N2218A for 2N2219A I C = 10 mA f = 1 kHz for 2N2218A for 2N2219A V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A 30 50 150 300 Min. Typ. Max. Unit

50 75

300 375

fT

Transition Frequency

I C = 20 mA V CE = 20 V f = 100 MHz for 2N2218A and 2N2221A for 2N2219A and 2N2222A IC = 0 f = 100 kHz IE = 0 f = 100 kHz I C = 20 mA f = 300 MHz I C = 100 A R 9 = 1 k I C = 1 mA for 2N2218A for 2N2219A I C = 10 mA for 2N2218A for 2N2219A I C = 1 mA for 2N2218A for 2N2219A I C = 10 mA for 2N2218A for 2N2219A I C = 1 mA for 2N2218A for 2N2219A I C = 10 mA for 2N2218A for 2N2219A I C = 150 mA I B1 = 15 mA I C = 150 mA I B1 = 15 mA V EB = 0.5 V V CB = 10 V V CE = 20 V V CE = 10 V f = 1 kHz V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A V CE = 10 V and 2N2221A and 2N2222A V CC = 30 V V BB = 0.5 V V CC = 30 V V BB = 0.5 V

250 300 25 8 60 4

MHz MHz pF pF dB

C EBO C CBO R e (h ie ) NF h i e **

Emitter-base Capacitance Collector-base Capacitance Real Part of Input Impedance Noise Figure Input Impedance

1 2 0.2 0.25

3.5 8 1 1.25 5x10 4 8x10 4 2.5x10 4 4x10 4

h re **

Reverse Voltage Ratio

h o e **

Output Admittance

3 5 10 25

15 35 100 200 10 25 225 60 150

S S S S ns ns ns ns ps

t d *** t r*** t s *** t f *** r b b C b c

Delay Time Rise Time Storage Time Fall Time Feedback Time Constant

I C = 150 mA V CC = 30 V I B1 = I B 2 = 15 mA I C = 150 mA V CC = 30 V I B1 = I B 2 = 15 mA I C = 20 mA f = 31.8 MHz V CE = 20 V

** f = 1 kHz *** see test circuit.

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2N2218A-2N2219A-2N2221A-2N2222A
Normalized DC Current Gain. Collector-emitter Saturation Voltage.

Contours of Constant Narrow Band Noise Figure.

Switching Time vs. Collector Current.

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2N2218A-2N2219A-2N2221A-2N2222A
Test Circuit fot td, tr.

PULSE GENERATOR : tr 20 ns PW 200 ns ZIN = 50

TO OSCILLOSCOPE : tr 5.0 ns ZIN < 100 K CIN 12 pF

Test Circuit fot td, tr.

PULSE GENERATOR : PW 10 s ZIN = 50 TC 5.0 ns

TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 K CIN 12 pF

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2N2218A-2N2219A-2N2221A-2N2222A

TO-18 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

D G I H E F

L C B

0016043

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2N2218A-2N2219A-2N2221A-2N2222A

TO39 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch

D G I H E F

L B

P008B

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2N2218A-2N2219A-2N2221A-2N2222A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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