CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND Gate

March 1988

CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND Gate
General Description
These NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage This results in high noise immunity over a wide supply voltage range No DC power other than that caused by leakage current is consumed during static conditions All inputs are protected against static discharge and latching conditions

Features
Y Y Y

Wide supply voltage range Low power High noise immunity

3 0V to 15V 10 nW (typ ) 0 45 VDD (typ )

Applications
Y Y Y Y

Automotive Data terminals Instrumentation Medical Electronics

Y Y Y Y

Alarm system Industrial controls Remote metering Computers

Connection Diagrams
CD4002 Dual-In-Line Package CD4012 Dual-In-Line Package

TL F 5940 1

TL F 5940 2

Top View Order Number CD4002 or CD4012

Top View

C1995 National Semiconductor Corporation

TL F 5940

RRD-B30M105 Printed in U S A

Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications
Voltage at Any Pin Operating Temperature Range CD4002M CD4012M CD4002C CD4012C VSS b0 3V to VDD a 0 3V
b 55 C to a 125 C b 40 C to a 85 C

Storage Temperature Range (TS) Power Dissipation (PD) Dual-In-Line Small Outline Operating Range (VDD) Lead Temperature (TL) (Soldering 10 seconds) CD4012M Limits
b 55 C a 25 C

b 65 C to a 150 C

700 mW 500 mW VSS a 3 0V to VSS a 15V 260 C

DC Electrical Characteristics CD4002M

Symbol IDD PD VOL VOH VNL VNH IDN Parameter Quiescent Device Current Conditions VDD e 5 0V VDD e 10V

a 125 C

Units mA mA mW mW V V V V V V V V mA mA mA mA mA mA mA mA pA

Min

Max 0 05 01 0 25 10 0 05 0 05

Min

Typ

Max

Min

Max 30 6 15 60 0 05 0 05

0 001 0 05 0 001 0 1 0 005 0 25 0 01 10 0 0 4 95 9 95 15 30 15 30 0 40 09

b0 5 b0 5

Quiescent Device VDD e 5 0V Dissipation Package VDD e 10V Output Voltage Low Level Output Voltage High Level Noise Immunity (All Inputs) Noise Immunity (All Inputs) Output Drive Current N-Channel (4002) (Note 2) Output Drive Current P-Channel (4002) (Note 2) Output Drive Current N-Channel (4012) (Note 2) Output Drive Current P-Channel (4012) (Note 2) Input Current VDD e 5 0V VI e VDD IO e 0A VDD e 10V VI e VDD IO e 0A VDD e 5 0V VI e VSS IO e 0A VDD e 10V VI e VSS IO e 0A VDD e 5 0V VO e 3 6V IO e 0A VDD e 10V VO e 7 2V IO e 0A VDD e 5 0V VO e 0 95V IO e 0A VDD e 10V VO e 2 9V IO e 0A VDD e 5 0V VO e 0 4V VI e VDD VDD e 10V VO e 0 5V VI e VDD VDD e 5 0V VO e 2 5V VI e VSS VDD e 10V VO e 9 5V VI e VSS VDD e 5 0V VO e 0 4V VI e VDD VDD e 10V VO e 0 5V VI e VDD VDD e 5 0V VO e 2 5V VI e VSS VDD e 10V VO e 9 5V VI e VSS 4 95 9 95 15 30 14 29 05 11
b 0 62 b 0 62

0 05 0 05 4 95 9 95 14 29 15 30 0 28 0 65
b 0 35 b 0 35

50 10 2 25 45 2 25 45 10 25
b2 0 b1 0

IDP

IDN

0 31 0 63
b 0 31 b 0 75

0 25 05
b 0 25 b0 6

05 06
b0 5 b1 2

0 175 0 35
b 0 175 b0 4

IDP

II

10

Note 1 Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed Except for Operating Temperature Range they are not meant to imply that the devices should be operated at these limits The table of Electrical Characteristics provides conditions for actual device operation Note 2 IDN and IDP are tested one output at a time

DC Electrical Characteristics CD4002C

Symbol IDD PD VOL VOH VNL VNH IDN Parameter Quiescent Device Current Conditions VDD e 5 0V VDD e 10V

CD4012C Limits
b 55 C a 25 C a 85 C

Units 15 30 mA mA mW mW V V V V V V V V mA mA mA mA mA mA mA mA pA

Min

Max 05 50 25 50 0 05 0 05

Min

Typ 0 005 0 005 0 025 0 05 0 0

Max 05 50 25 50 0 05 0 05

Min

Max

Quiescent Device VDD e 5 0V Dissipation Package VDD e 10V Output Voltage Low Level Output Voltage High Level Noise Immunity (All Inputs) Noise Immunity (All Inputs) Output Drive Current N-Channel (4002) (Note 2) Output Drive Current N-Channel (4012) (Note 2) Output Drive Current P-Channel (4002) (Note 2) Output Drive Current P-Channel (4012) (Note 2) Input Current VDD e 5 0V VI e VDD IO e 0A VDD e 10V VI e VDD IO e 0A VDD e 5 0V VI e VSS IO e 0A VDD e 10V VI e VSS IO e 0A VDD e 5 0V VO t 3 6V IO e 0A VDD e 10V VO t 7 2V IO e 0A VDD e 5 0V VO s 0 95V IO e 0A VDD e 10V VO s 2 9V IO e 0A VDD e 5 0V VO e 0 4V VI e VDD VDD e 10V VO e 0 5V VI e VDD VDD e 5 0V VO e 0 4V VI e VDD VDD e 10V VO e 0 5V VI e VDD VDD e 5 0V VO e 2 5V VI e VSS VDD e 10V VO e 9 5V VI e VSS VDD e 5 0V VO e 2 5V VI e VSS VDD e 10V VO e 9 5V VI e VSS 4 95 9 95 15 30 14 29 0 35 0 72 0 145 03
b 0 35 b0 3 b 0 145 b 0 35

75 300 0 05 0 05 4 95 9 95 14 29 15 30 0 24 0 48 0 095 02
b 0 24 b0 2 b 0 095 b 0 24

4 95 9 95 15 30 15 30 03 06 0 12 0 25
b0 3 b 0 25 b 0 12 b0 3

50 10 2 25 45 2 25 45 10 25 05 06
b2 0 b1 0 b0 5 b1 2

IDN

IDP

IDP

II

10

Note 1 Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed Except for Operating Temperature Range they are not meant to imply that the devices should be operated at these limits The table of Electrical Characteristics provides conditions for actual device operation Note 2 IDN and IDP are tested one output at a time

AC Electrical Characteristics TA e 25 C CL e 15 pF and input rise and fall times e 20 ns Typical temperature coefficient for all values of VDD e 0 3% C
Symbol CD4002M tPHL tPLH tTHL tTLH CIN CD4002C tPHL TPLH tTHL tTLH CIN Propagation Delay Time High to Low Level Propagation Delay Time Low to High Level Transition Time High to Low Level Transition Time Low to High Level Input Capacitance VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V Any Input 35 25 35 25 65 35 65 35 50 120 65 80 55 300 125 200 115 ns ns ns ns ns ns ns ns pF Propagation Delay Time High to Low Level Propagation Delay Time Low to High Level Transition Time High to Low Level Transition Time Low to High Level Input Capacitance VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V Any Input 35 25 35 25 65 35 65 35 50 50 40 50 40 175 75 125 70 ns ns ns ns ns ns ns ns pF Parameter Conditions Min Typ Max Units

AC Parameters are guaranteed by DC correlated testing

AC Electrical Characteristics TA e 25 C CL e 15 pF and input rise and fall times e 20 ns Typical temperature coefficient for all values of VDD e 0 3% C
Symbol CD4012M tPHL tPLH tTHL tTLH CIN CD4012C tPHL TPLH tTHL tTLH CIN Propagation Delay Time High to Low Level Propagation Delay Time Low to High Level Transition Time High to Low Level Transition Time Low to High Level Input Capacitance VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V Any Input 50 25 50 25 75 50 75 40 50 100 50 100 50 150 100 125 75 ns ns ns ns ns ns ns ns pF Propagation Delay Time High to Low Level Propagation Delay Time Low to High Level Transition Time High to Low Level Transition Time Low to High Level Input Capacitance VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V VDD e 5 0V VDD e 10V Any Input 50 25 50 25 75 50 75 40 50 75 40 75 40 125 75 100 60 ns ns ns ns ns ns ns ns pF Parameter Conditions Min Typ Max Units

AC Parameters are guaranteed by DC correlated testing Note 1 Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed Except for Operating Temperature Range they are not meant to imply that the devices should be operated at these limits The table of Electrical Characteristics provides conditions for actual device operation

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J) Order Number CD4002MJ CD4002CJ CD4012MJ or CD4012CJ NS Package Number J14A

CD4002M CD4002C Dual 4-Input NOR Gate CD4012M CD4012C Dual 4-Input NAND Gate

Physical Dimensions inches (millimeters) (Continued)

Molded Dual-In-Line Package (N) Order Number CD4002MN CD4002CN CD4012MN or CD4012CN NS Package Number N14A

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