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Advanced Semiconductor Devices Lecture 3

Lecture outline

Non-equilibrium semiconductors: Quasi-Fermi levels Excess carrier generation-recombination Carrier lifetime and diffusion length PN junction in equilibrium PN junction under bias PN junction current

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Non-equilibrium: Quasi-Fermi levels


EC EG EFP EFN EV
In non-equilibrium, can not describe semiconductor properties with a single constant Fermi level Introduce quasi-Fermi levels EFN and EFP for electrons and holes

n = NC e

EFN - EC kT

p = NV e

EV - EFP kT

Excess carrier concentrations: n and p

n = n0 + Dn

p = p0 + Dp
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Non-equilibrium total current


EC EG EFP EFN EV
In general, for electrons in 3-dimensions
diff J n = J dr + J = qnm nE + qDnn = mn nEFN n n

Similarly, for holes


diff J p = J dr + J p p = qp m pE - qD p p = m p pE FP

Total current

J = J n + J p = mn nEFN + m p pEFP

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Generation - recombination of carriers

Main physical processes are


Direct band generation and recombination R-G center generation-recombination via impurities and traps Surface recombination

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Generation -recombination of carriers


Band-to-band R-G in indirect band semiconductors is complex and requires involvement of phonons for momentum conservation

Assume low-level injection

Dp = p0 , Dn = n0

Minority carrier recombination rate can be approximated as

Dn Dp R; , R; tn tp
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Continuity equation
Consider electron current in a semiconductor bar Assume electron generation and recombination
x

G R
n

J n ( x)

J n ( x + Dx )

dn J ( x) J n ( x + Dx) Dx = n + ( Gn - Rn ) Dx dt -q -q
Let x approach zero to derive the continuity equation for electrons

dn 1 dJ n = + ( Gn - Rn ) dt q dx
Similarly for holes

dp 1 dJ p =+ ( G p - Rp ) dt q dx
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Minority carrier diffusion equation


No electric field

E =0
n p 0 = const( x)

Low level injection in p-type semiconductor n p = n p 0 + Dn p Dn p = p p 0 The equilibrium minority carriers Approximate minority carrier current

dn dn J n = qnm nE + qDn ; qDn dx dx d 2 Dn p 1 dJ n ; Dn q dx dx 2 d Dn p dt 1 dJ n = + ( Gn - Rn ) q dx

Obtain minority carrier diffusion equation

d Dn p dt

= Dn

d 2 Dn p dx
2

+ ( Gn - Rn )

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Diffusion length
A p-type Si bar is illuminated with light resulting in n0 minority carriers on the surface (no generation in the body of Si) Find the distribution of minority carriers in the body of Si
Dn0

hw

Si

Assume low-level injection condition We are only interested in minority carrier behavior

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Diffusion length
Using minority carrier recombination rate

Rn =

Dn p

tn

And assuming steady-state condition

dn p dt

=0

Write minority carrier diffusion equation

Dn

d 2 Dn p dx
2

Dn p

tn
x Dnt n

=0

General exponential solution

Dn p ( x) = C1 e

+ C2 e

x Dnt n

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Diffusion length
Assume that excess minority carriers approach zero far from the illuminated surface. Use the following boundary conditions

x , Dn p 0 x 0, Dn p Dn0
Obtain solution

Dn p ( x) = Dn0 e

x Dnt n

= Dn0 e

x LN

Where we define the diffusion length and calculate it using Einstein relationship

LN Dnt n =

kT m nt n q

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Poisson equation
Relationship between semiconductor charge density and electric fields

d 2y dE r ( x) ==2 dx dx es
Define total semiconductor charge density (assuming complete ionization of impurities)

r ( x) = q ( p - n + N D - N A )
+ ND ; ND , NA ; NA

Semiconductor permittivity

e s @ 110

-12

F cm

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Abrupt pn - junction in equilibrium


Consider two bars of semiconductor material of types n and p respectively

EC Ei EF EV p ; NA p = NV e p = ni e
EV - EF kT

EC EF Ei EV n ; ND n = NC e
EF - EC kT

Ei - EF kT

n = ni e

EF - Ei kT

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Abrupt pn - junction in equilibrium


p-type SC n-type

p ; NA -xp

NA

+ ND

n ; ND xn

Three different regions present:


Space-charge depletion region Neutral p-type region Neutral n-type region

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Abrupt pn - junction in equilibrium


For pn - junction under thermal equilibrium

EF = const (x)

EC Ei EF EV EC EF Ei EV

( Ei - EF ) p

p NA = kT ln ; kT ln n n i i

( EF - Ei )n

n ND = kT ln ; kT ln n n i i

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Band bending in equilibrium


Band bending maintains constant Fermi level in equilibrium Introduce the built-in voltage VBI

EC Eip EF EV EC qVBI Ein xn qVBI = EV

-xp

(( E - E
i

) p + ( EF - Ei )n )

N AND kT VBI = ln 2 q n i
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Carrier distribution in equilibrium


EC Ei
EC - E FP

qVBI
EC

EF
EV

EF
-xp
ln( n )

xn

Ei EV

pp0 N A n p 0 ni2 / N A

nn 0 N D ni pn 0 ni2 / N D
xn
Lec

-xp

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Solution for electric field


First, solve for the electric field

-xp

E ( x)

x xn

E max

dE r ( x) = dx es

r = - qN A , - x p < x < 0
qN A E ( x) = x + xp ), ( es

r = qN D , 0 < x < xn
qN D E ( x) = ( x - xn ) es

E max = -

qN A qN x p = - D xn es es

N A x p = N D xn
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Solution for electric potential


Second, solve for electrostatic potential
y ( x)

-xp xn dy E =dx 2 qN A y ( x) = x + xp ) - x2 - xp < x < 0 ( p , 2e s

qN D 2 2 y ( x) = xn - ( x - xn ) , 0 < x < xn 2e s qN qN D 2 y (- x p ) = - A x 2 , y ( x ) = xn p n 2e s 2e s
VBI = y ( xn ) -y (- x p ) = q 2 xn ND + x2 ( pNA ) 2e s
Lec

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Depletion region width


Finally, solve for the depletion region width

q 2 2 VBI = x N + x ( n D pNA ) 2e s 2e s ND xp = VBI q N A ( N A + ND )

N A x p = N D xn x p =

N D xn NA

xn =

2e s NA VBI q ND ( N A + ND )

2e s W = x p + xn = q

1 1 + VBI N A ND

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Electric field and junction charge


Calculate maximum electric field

E max

qN A qN D =xp = xn es es 2q N A N D = VBI e s ND + N A

E max

Define junction charge

QJ = qN A x p = qN D xn Q = 2e s q N AND VBI ND + N A

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Energy bands under reverse bias


E
Most of the applied voltage drops in the depletion region because of the high resistivity Far from the junction, material remains quasi-neutral Energy band bending is increased under reverse bias by qVA The distance between quasi-Fermi levels in the depletion region: qVA The depletion region width is increased
- xp
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EC Ei

qVBI
EC

EF
EV

EF
-xp
Ei

xn
EV

EC Ei

q (VBI - VA )
qVA
EC EFN Ei

EFP EV

xn
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EV

Carrier distribution under revers bias


EC Ei

q (VBI - VA )
qVA
- xp
ln( n )

EFP EV

EC EFN

xn

Ei

EV

p p0 N A n p 0 ni2 / N A

nn 0 N D ni pn 0 ni2 / N D x

- xp

xn
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Depletion region width under reverse bias


The depletion region width increases due to applied reverse voltage

2e s W = x p + xn = q

1 1 + VBI - VA N A ND

E max

2q N A N D = VBI - VA e s ND + N A

N AND Q = 2e s q VBI - VA ND + N A
Define depletion region capacitance

dQ 1 N AND C= = 2e s q dVA 2 ND + N A

es 1 = VBI - VA W
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Energy bands under forward bias


EC Depletion region width decreases under forward bias Ei Energy band bending E F is decreased under EV forward bias by qVA

qVBI
EC

EF
-xp
Ei

The minority carrier concentration in the quasi-equilibrium region is higher than the equilibrium concentration

xn
EV

EC
Ei

q (VBI - VA ) qVA
EC EFN Ei

EFP EV

-xp
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xn
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Carrier distribution under forward bias


E
EC
Ei

xn

q (VBI - VA ) qVA
EC EFN Ei

EFP EV

-xp
ln( n )

p p0 N A n p 0 ni2 / N A

nn 0 N D ni pn 0 ni2 / N D
- xp

xn
26

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Charge density and applied voltage


Charge concentration in terms of the quasi-Fermi levels

p n E E = T ln EFN - Ei = kT ln i FP n ni i Within the depletion (space charge region)


EFN - EFP = qVA

On the border of the depletion region

x = - xp
qVA kT

np = np0 e
Similarly when
x = xn

q( EFN - EFP ) kT

= np0 e

pn = p n 0 e

q( EFN - EFP ) kT

= pn 0 e

qVA kT

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Junction current
p-type SC n-type

p ; NA

np
-xp

NA

ND

n ; ND

pn
xn

In the neutral n- type region the minority carriers density is pn Since there is no electric field, the continuity equation is

d 2 ( pn - pn 0 ) pn - pn 0 =0 2 dx D pt p
Boundary condition
pn ( x = ) = pn 0
- ( x - xn )/ L p
A qV - ( x- xn )/ Lp kT = pn 0 e - 1 e

pn - pn 0 = ( pn - pn 0 ) x = x e
n

Lp

D pt p

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Junction current
Since current is constant at every place along the device, we calculate current at the boundary between the depletion and neutral regions Assume the diffusion current only on the border of the neutral region

dp J p = - qD p n dx

x = xn

A qD p pn 0 qV kT = e - 1 Lp

Similarly for the p-type region

J n = qDn

dn p dx
x =- x p

A qDn n p 0 qV kT = e - 1 Ln

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Junction current
Since current is constant at every place along the device, we calculate current at the boundary between the depletion and neutral regions Assume the diffusion current only on the border of the neutral region

dp J p = - qD p n dx

x = xn

A qD p pn 0 qV kT = e - 1 Lp

Similarly for the p-type region

J n = qDn

dn p dx
x =- x p

A qDn n p 0 qV kT = e - 1 Ln

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Junction current
Charge density and current under external bias

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Junction current
The total current results in Shockley equation
A qV kT J = J n + J p = J 0 e - 1

J0 =

qDn n p 0 Ln

qD p pn 0 Lp

VA

J0

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Junction current
Current in practical Si diode

Reverse current is much higher than theoretical due to generation-recombination and surface effects
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