Escolar Documentos
Profissional Documentos
Cultura Documentos
Lecture outline
Non-equilibrium semiconductors: Quasi-Fermi levels Excess carrier generation-recombination Carrier lifetime and diffusion length PN junction in equilibrium PN junction under bias PN junction current
Lec
n = NC e
EFN - EC kT
p = NV e
EV - EFP kT
n = n0 + Dn
p = p0 + Dp
V. Ariel 2012 Advanced Semiconductor Devices Lec
Total current
J = J n + J p = mn nEFN + m p pEFP
Lec
Direct band generation and recombination R-G center generation-recombination via impurities and traps Surface recombination
Lec
Dp = p0 , Dn = n0
Dn Dp R; , R; tn tp
V. Ariel 2012 Advanced Semiconductor Devices Lec
Continuity equation
Consider electron current in a semiconductor bar Assume electron generation and recombination
x
G R
n
J n ( x)
J n ( x + Dx )
dn J ( x) J n ( x + Dx) Dx = n + ( Gn - Rn ) Dx dt -q -q
Let x approach zero to derive the continuity equation for electrons
dn 1 dJ n = + ( Gn - Rn ) dt q dx
Similarly for holes
dp 1 dJ p =+ ( G p - Rp ) dt q dx
V. Ariel 2012 Advanced Semiconductor Devices Lec
E =0
n p 0 = const( x)
Low level injection in p-type semiconductor n p = n p 0 + Dn p Dn p = p p 0 The equilibrium minority carriers Approximate minority carrier current
d Dn p dt
= Dn
d 2 Dn p dx
2
+ ( Gn - Rn )
Lec
Diffusion length
A p-type Si bar is illuminated with light resulting in n0 minority carriers on the surface (no generation in the body of Si) Find the distribution of minority carriers in the body of Si
Dn0
hw
Si
Assume low-level injection condition We are only interested in minority carrier behavior
Lec
Diffusion length
Using minority carrier recombination rate
Rn =
Dn p
tn
dn p dt
=0
Dn
d 2 Dn p dx
2
Dn p
tn
x Dnt n
=0
Dn p ( x) = C1 e
+ C2 e
x Dnt n
Lec
10
Diffusion length
Assume that excess minority carriers approach zero far from the illuminated surface. Use the following boundary conditions
x , Dn p 0 x 0, Dn p Dn0
Obtain solution
Dn p ( x) = Dn0 e
x Dnt n
= Dn0 e
x LN
Where we define the diffusion length and calculate it using Einstein relationship
LN Dnt n =
kT m nt n q
Lec
11
Poisson equation
Relationship between semiconductor charge density and electric fields
d 2y dE r ( x) ==2 dx dx es
Define total semiconductor charge density (assuming complete ionization of impurities)
r ( x) = q ( p - n + N D - N A )
+ ND ; ND , NA ; NA
Semiconductor permittivity
e s @ 110
-12
F cm
Lec
12
EC Ei EF EV p ; NA p = NV e p = ni e
EV - EF kT
EC EF Ei EV n ; ND n = NC e
EF - EC kT
Ei - EF kT
n = ni e
EF - Ei kT
Lec
13
p ; NA -xp
NA
+ ND
n ; ND xn
Lec
14
EF = const (x)
EC Ei EF EV EC EF Ei EV
( Ei - EF ) p
p NA = kT ln ; kT ln n n i i
( EF - Ei )n
n ND = kT ln ; kT ln n n i i
Lec
15
-xp
(( E - E
i
) p + ( EF - Ei )n )
N AND kT VBI = ln 2 q n i
V. Ariel 2012 Advanced Semiconductor Devices Lec
16
qVBI
EC
EF
EV
EF
-xp
ln( n )
xn
Ei EV
pp0 N A n p 0 ni2 / N A
nn 0 N D ni pn 0 ni2 / N D
xn
Lec
-xp
17
-xp
E ( x)
x xn
E max
dE r ( x) = dx es
r = - qN A , - x p < x < 0
qN A E ( x) = x + xp ), ( es
r = qN D , 0 < x < xn
qN D E ( x) = ( x - xn ) es
E max = -
qN A qN x p = - D xn es es
N A x p = N D xn
V. Ariel 2012 Advanced Semiconductor Devices Lec
18
qN D 2 2 y ( x) = xn - ( x - xn ) , 0 < x < xn 2e s qN qN D 2 y (- x p ) = - A x 2 , y ( x ) = xn p n 2e s 2e s
VBI = y ( xn ) -y (- x p ) = q 2 xn ND + x2 ( pNA ) 2e s
Lec
19
N A x p = N D xn x p =
N D xn NA
xn =
2e s NA VBI q ND ( N A + ND )
2e s W = x p + xn = q
1 1 + VBI N A ND
Lec
20
E max
qN A qN D =xp = xn es es 2q N A N D = VBI e s ND + N A
E max
QJ = qN A x p = qN D xn Q = 2e s q N AND VBI ND + N A
Lec
21
EC Ei
qVBI
EC
EF
EV
EF
-xp
Ei
xn
EV
EC Ei
q (VBI - VA )
qVA
EC EFN Ei
EFP EV
xn
22
EV
q (VBI - VA )
qVA
- xp
ln( n )
EFP EV
EC EFN
xn
Ei
EV
p p0 N A n p 0 ni2 / N A
nn 0 N D ni pn 0 ni2 / N D x
- xp
xn
23
2e s W = x p + xn = q
1 1 + VBI - VA N A ND
E max
2q N A N D = VBI - VA e s ND + N A
N AND Q = 2e s q VBI - VA ND + N A
Define depletion region capacitance
dQ 1 N AND C= = 2e s q dVA 2 ND + N A
es 1 = VBI - VA W
24
qVBI
EC
EF
-xp
Ei
The minority carrier concentration in the quasi-equilibrium region is higher than the equilibrium concentration
xn
EV
EC
Ei
q (VBI - VA ) qVA
EC EFN Ei
EFP EV
-xp
CMOS Digital Camera Viktor Ariel 2012 (6)
xn
25
xn
q (VBI - VA ) qVA
EC EFN Ei
EFP EV
-xp
ln( n )
p p0 N A n p 0 ni2 / N A
nn 0 N D ni pn 0 ni2 / N D
- xp
xn
26
x = - xp
qVA kT
np = np0 e
Similarly when
x = xn
q( EFN - EFP ) kT
= np0 e
pn = p n 0 e
q( EFN - EFP ) kT
= pn 0 e
qVA kT
27
Junction current
p-type SC n-type
p ; NA
np
-xp
NA
ND
n ; ND
pn
xn
In the neutral n- type region the minority carriers density is pn Since there is no electric field, the continuity equation is
d 2 ( pn - pn 0 ) pn - pn 0 =0 2 dx D pt p
Boundary condition
pn ( x = ) = pn 0
- ( x - xn )/ L p
A qV - ( x- xn )/ Lp kT = pn 0 e - 1 e
pn - pn 0 = ( pn - pn 0 ) x = x e
n
Lp
D pt p
28
Junction current
Since current is constant at every place along the device, we calculate current at the boundary between the depletion and neutral regions Assume the diffusion current only on the border of the neutral region
dp J p = - qD p n dx
x = xn
A qD p pn 0 qV kT = e - 1 Lp
J n = qDn
dn p dx
x =- x p
A qDn n p 0 qV kT = e - 1 Ln
29
Junction current
Since current is constant at every place along the device, we calculate current at the boundary between the depletion and neutral regions Assume the diffusion current only on the border of the neutral region
dp J p = - qD p n dx
x = xn
A qD p pn 0 qV kT = e - 1 Lp
J n = qDn
dn p dx
x =- x p
A qDn n p 0 qV kT = e - 1 Ln
30
Junction current
Charge density and current under external bias
31
Junction current
The total current results in Shockley equation
A qV kT J = J n + J p = J 0 e - 1
J0 =
qDn n p 0 Ln
qD p pn 0 Lp
VA
J0
32
Junction current
Current in practical Si diode
Reverse current is much higher than theoretical due to generation-recombination and surface effects
CMOS Digital Camera Viktor Ariel 2012 (6)
33