1. Kinetic energy of particle is given by (a) 2 m/s (b) mV2 /2 (c) mV2 (d) 2mV2 2.

The velocity of an electron accelerated by potential V is proportional to (a) V2 (b) V (c) 1/V (d) V 3. 1 Electron volt = .................... (a) 1.6 1016 J (b) 1.6 1016 J (c) 1.6 1019 J (d) 1.6 1019 J 4. An electron is inuenced by a magnetic eld only when it is (a) at rest (b) in motion parallel to the eld (c) in motion perpendicular to the eld (d) making an angle = 00 or 1800 5. When a charged particle enters the magnetic eld parallel to eld, then path followed by it is (a) Helix (b) Cycloid (c) Circle (d) Straight line 6. The electrostatic deection sensitivity is inversely proportional to (a) Final anode voltage (b) Length of the deection plates (c) e/m (d) Distance between the screen and the center of the deection plates 7. The grid in CRT acts as (a) intensity control (b) phase control (c) frequency control (d) focus control 8. Electrostatic Deection sensitivity is dened as (a) Deection voltage / deection on screen (b) Deection voltage + Deection on screen (c) Deection on screen * deecting voltage (d) Deection on screen/ deecting voltage 9. In a CRT, the length of the deecting plates in the direction of the beam is 2 cm, the spacing of the plates is 0.5 cm and the distance of the orescent screen from the centre of the plate is 18 cm. Calculate the deection sensitivity if the nal anode voltage is 1500 v (a) 0.024 m/v (b) 24 m/v. (c) 2.4 m/v (d) 0.24 m/v 10. One of following is important for writing speed in a CRO (a) Beam deection deceleration (b) Beam post acceleration (c) Beam post deceleration. (d) Beam deection 11. Hole diusion current is proportional to (a) (b) (c) (d)
dp dn dn dx dp dt dp dx

12. Width of the barrier varies as (a) inverse of impurity concentration (b) directly proportional to square of impurity concentration (c) directly proportional to impurity concentration (d) inversely square root of impurity concentration 13. Find the increase in temperature T necessary to increase the reverse saturation current of a diode by a factor of 100 (a) 66.40 C (b) 6640 C (c) 0.6640 C (d) 6.640 C 14. A silicon diode at room temperature (300K) conducts 1mA at 0.7V. Given that the voltage increases to 0.8V. Calculate the diode current assume =1 (a) 4.68mA (b) 46.8mA (c) 468mA (d) 0.468mA 15. The diusion capacitance related to volt equivalent temperature as (a) CD = (b) CD = (c) CD = (d) CD =
V T IO V T IO IO VT IO F VT

16. The relation between velocity and mobility is given by V = (a) (b) (d)
1 E E

(c) E
E

17. At 100 C the reverse saturation current in p-n junction is 5A Find its value at 200 C (a) 1209 micro A (b) 740 micro A (c) 10 micro amps. (d) 640 micro A 18. The following represent the small signal model for zener diode (a) Shown in gure18a

Figure 18a (b) Shown in gure18b

Figure 18b (c) Shown in gure18c

Figure 18c (d) Shown in gure18d

Figure 18d 19. In a tunnel diode, depletion layer width is of the order of (a) 1 micron (b) 5 micron (c) 10 A0 (d) 0.1 micron 20. In a varactor diode using alloy junction, the transition capacitance is proportional (a) 1/V (b) 1/V 2 (c) V 2 (d) 1/ V